UMX21N Transistors High transition frequency (dual transistors) UMX21N zExternal dimensions (Unit : mm) 0.1Min. (1) ROHM : UMT6 EIAJ : SC-88 Tr2 0.9 0~0.1 (2) 0.7 0.15 2.1 UMX21N (3) 2.0 0.65 1.25 zEquivalent circuits 1.3 (3) (2) (1) (5) (6) 0.2 (4) UMX21N 0.65 zFeatures 1) Two 2SC4713K chips in a UMT package. 2) Very low output-on resistance. (Ron) 3) Low capacitance. Each lead has same dimensions Tr1 (4) (5) (6) zAbsolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol Limits Unit VCBO VCEO V V VEBO IC 12 6 3 50 V mA PC 150 mW Tj Tstg 150 −55 to +150 °C °C Collector power dissipation Junction temperature Storage temperature ∗ 120mW per element must not be exceeded. ∗ zPackage, marking, and packaging specifications Type UMX21N Package UMT6 Marking Code X21 TR Basic ordering unit (pieces) 3000 zElectrical characteristics (Ta=25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Output-on resistance Symbol Min. Typ. Max. Unit BVCBO BVCEO 12 6 3 − − − − − − − − − − − − 0.5 0.5 0.3 V V V µA µA V Cob 270 300 − − 800 1 560 − 1.7 − MHz pF Ron − 2 − Ω BVEBO ICBO IEBO VCE(sat) hFE fT Conditions IC=10µA IC=1mA IE=10µA VCB=10V VEB=2V IC/IB=10mA/1mA VCE/IC=5V/10mA VCE=5V, IE= −10mA, f=200MHz VCB=10V, IE=0A, f=1MHz IB=3mA, VI=100mVrms, f=500kHz 1/2 UMX21N Transistors zElectrical characteristics curves 25mA 20mA 6 15mA 4 10mA 5mA 2 0 0 1 2 40 0.1mA 20 10 0 0 0.1 0.2 25°C 30 20 10 0 0 0.4 0.8 1.2 1.6 2.0 COLLECTOR TO EMITTER VOLTAGE : VCE (V) BASE TO EMITTER VOLTAGE : VBE (V) Fig.1 Grounded emitter output Fig.2 Grounded emitter output Fig.3 Grounded emitter propagation COLLECTER SATURATION VOLTAGE : VCE(sat) (mA) characteristics ( characteristics ) 2000 1000 Ta=25°C VCE=5V 500 200 100 50 20 10 0.1 0.2 0.5 1 2 5 10 20 50 Ta=25°C IC/IB=10 500 GAIN BANDWIDTH PRODUCT : fT (MHz) 1000 200 100 50 20 10 5 0.1 0.2 0.5 1 2 5 10 20 500 200 100 50 20 0.1 0.2 50 5 2 1 0.5 0.2 0.1 0.2 0.5 1 2 5 10 20 50 10 5 10 20 5 2 1 0.5 Ta=25°C f=500kHz υi=100mVrms RL=1kΩ 20 10 5 2 0.2 0.1 0.2 0.5 1 2 5 10 20 50 1 0.1 0.2 0.5 1 2 5 10 20 50 COLLECTOR TO BASE VOLTAGE : VCB (V) COLLECTOR TO BASE VOLTAGE : VCB (V) BASS CURRENT : IB (mA) Fig.7 Collector output capacitance Fig.8 Back capacitance voltage Fig.9 Output-on resistance vs. vs. voltage 50 50 Ta=25°C f=1MHz ON RESISTANE : Ron (Ω) OUTPUT CAPACITANCE : Cob (pF) 10 2 collector current 20 Ta=25°C f=1MHz 1 Fig.6 Gain bandwidth product vs. voltage vs. collector current 20 0.5 COLLECTOR CURRENT : IC (mA) Fig.5 Collector-emitter saturation Fig.4 DC current gain vs. collector current Ta=25°C VCE=5V 1000 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) FEEDBACK CAPACITIANCE : Cre (pF) −25°C 125°C 40 IB=0mA 0.4 0.5 0.3 VCE=5V COLLECTOR TO EMITTER VOLTAGE : VCE (V) characteristics ( ) DC CURRENT TRANSFER RATIO : hFE 0.2mA 30 IB=0µA 4 5 3 mA 8 50 0.3mA 1.0 30mA mA A 0.5 0.4m Ta=25°C COLLECTOR CURRENT : IC (mA) 50 35mA Ta=25°C COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) 10 base current 2/2 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1