Transistors with built-in Resistor UNR222x Series (UN222x Series) Silicon NPN epitaxial planar type Unit: mm For digital circuits 0.40+0.10 –0.05 0.16+0.10 –0.06 1.9±0.1 0.4±0.2 2.90+0.20 –0.05 ■ Resistance by Part Number 1.1+0.2 –0.1 1.1+0.3 –0.1 10˚ (R2) 2.2 kΩ 4.7 kΩ 10 kΩ 10 kΩ 0 to 0.1 Marking Symbol (R1) (UN2221) 9A 2.2 kΩ (UN2222) 9B 4.7 kΩ (UN2223) 9C 10 kΩ (UN2224) 9D 2.2 kΩ • UNR2221 • UNR2222 • UNR2223 • UNR2224 2 1 (0.95) (0.95) (0.65) • Costs can be reduced through downsizing of the equipment and reduction of the number of parts. • Mini type package allowing easy automatic insertion through tape packing and magazine packing 5˚ 1.50+0.25 –0.05 ■ Features 2.8+0.2 –0.3 3 ■ Absolute Maximum Ratings Ta = 25°C 1: Base 2: Emitter 3: Collector EIAJ: SC-59 Mini3-G1 Package Internal Connection Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 50 V Collector-emitter voltage (Base open) VCEO 50 V Collector current IC 500 mA Total power dissipation PT 200 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C R1 C B R2 E ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0 50 Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0 50 Collector-base cutoff current (Emitter open) ICBO VCB = 50 V, IE = 0 1 Collector-emitter cutoff current (Base open) ICEO VCE = 50 V, IB = 0 1 µA Emitter-base IEBO VEB = 6 V, IC = 0 5 mA UNR2221 Conditions Min Typ Max V V cutoff current UNR2222 2 (Collector open) UNR2223/2224 1 Forward current UNR2221 transfer ratio hFE VCE = 10 V, IC = 100 mA UNR2222 µA 40 50 UNR2223/2224 Collector-emitter saturation voltage Unit 60 VCE(sat) IC = 10 mA, IB = 5 mA Output voltage high-level VOH VCC = 5 V, VB = 0.5 V, RL = 500 Ω Output voltage low-level VOL VCC = 5 V, VB = 3.5 V, RL = 500 Ω 0.25 4.9 V V 0.2 V Note) The part numbers in the parenthesis show conventional part number. Publication date: December 2003 SJH00012CED 1 UNR222x Series ■ Electrical Characteristics (continued) Ta = 25°C ± 3°C Parameter Symbol Transition frequency fT Input resistance UNR2221/2224 R1 Conditions Min Typ VCB = 10 V, IE = −50 mA, f = 200 MHz Max Unit 200 −30% UNR2222 2.2 MHz +30% kΩ 4.7 UNR2223 10 Resistance ratio R1/R2 UNR2224 0.8 1.0 1.2 0.17 0.22 0.27 Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Common characteristics chart PT Ta Total power dissipation PT (mW) 250 200 150 100 50 0 0 40 80 120 160 Ambient temperature Ta (°C) Characteristics charts of UNR2221 Ta = 25°C Collector current IC (mA) 250 0.9 mA 0.8 mA 200 0.7 mA 0.6 mA 150 0.5 mA 100 0.4 mA 0.3 mA 50 0.2 mA 0 0 2 4 6 8 0.1 mA 10 12 Collector-emitter voltage VCE (V) 2 100 hFE IC 400 IC / IB = 10 VCE = 10 V Forward current transfer ratio hFE IB = 1.0 mA VCE(sat) IC Collector-emitter saturation voltage VCE(sat) (V) IC VCE 300 10 1 Ta = 75°C 25°C 0.1 300 Ta = 75°C 200 25°C 100 −25°C 0.01 −25°C 0 1 10 100 Collector current IC (mA) SJH00012CED 1 000 1 10 100 Collector current IC (mA) 1 000 UNR222x Series IO VIN 16 15 8 100 VO = 5 V Ta = 25°C 103 Input voltage VIN (V) 20 VIN IO 104 f = 1 MHz IE = 0 Ta = 25°C Output current IO (µA) Collector output capacitance C (pF) (Common base, input open circuited) ob Cob VCB 24 102 10 VO = 0.2 V Ta = 25°C 10 1 0.1 4 0 0.1 1 10 1 0.4 100 Collector-base voltage VCB (V) 0.6 0.8 1.0 1.2 0.01 0.1 1.4 1 10 100 Output current IO (mA) Input voltage VIN (V) Characteristics charts of UNR2222 IB = 1.0 mA 0.9 mA 0.8 mA 200 0.7 mA 0.6 mA 150 0.5 mA 100 0.4 mA 0.3 mA 50 0.2 mA 0.1 mA 0 0 2 4 6 8 10 12 100 IC / IB = 10 1 Ta = 75°C 25°C 0.1 25°C −25°C 100 50 0.01 0 1 10 100 1 000 1 IO VIN 104 8 6 4 100 1 000 VIN IO 100 VO = 5 V Ta = 25°C 103 Input voltage VIN (V) f = 1 MHz IE = 0 Ta = 25°C 10 Collector current IC (mA) Collector current IC (mA) Output current IO (µA) Collector output capacitance C (pF) (Common base, input open circuited) ob Ta = 75°C 150 −25°C Cob VCB 10 VCE = 10 V 10 Collector-emitter voltage VCE (V) 12 hFE IC 200 Forward current transfer ratio hFE Ta = 25°C 250 Collector current IC (mA) VCE(sat) IC Collector-emitter saturation voltage VCE(sat) (V) IC VCE 300 102 10 VO = 0.2 V Ta = 25°C 10 1 0.1 2 0 0.1 1 10 Collector-base voltage VCB (V) 100 1 0.4 0.6 0.8 1.0 1.2 Input voltage VIN (V) SJH00012CED 1.4 0.01 0.1 1 10 100 Output current IO (mA) 3 UNR222x Series Characteristics charts of UNR2223 VCE(sat) IC Collector current IC (mA) 200 IB = 1.0 mA 0.9 mA 0.8 mA 160 120 0.7 mA 0.6 mA 0.5 mA 80 0.4 mA 0.3 mA 40 0.2 mA 0.1 mA 0 0 2 4 6 8 10 100 IC / IB = 10 1 Ta = 75°C 25°C 0.1 −25°C 0.01 12 10 1 −25°C 50 0 1 000 10 1 6 4 100 1 000 Collector current IC (mA) VIN IO 100 VO = 5 V Ta = 25°C 103 Input voltage VIN (V) 8 25°C 100 IO VIN 104 f = 1 MHz IE = 0 Ta = 25°C Output current IO (µA) Collector output capacitance C (pF) (Common base, input open circuited) ob 100 Ta = 75°C 150 Collector current IC (mA) Cob VCB 10 VCE = 10 V 10 Collector-emitter voltage VCE (V) 12 hFE IC 200 Forward current transfer ratio hFE Ta = 25°C Collector-emitter saturation voltage VCE(sat) (V) IC VCE 240 102 10 VO = 0.2 V Ta = 25°C 10 1 0.1 2 0 0.1 1 10 1 0.4 100 Collector-base voltage VCB (V) 0.6 0.8 1.0 1.2 0.01 0.1 1.4 Input voltage VIN (V) 1 10 100 Output current IO (mA) Characteristics charts of UNR2224 VCE(sat) IC Collector current IC (mA) 250 IB = 1.0 mA 200 150 0.9 mA 0.8 mA 0.7 mA 100 0.6 mA 0.5 mA 0.4 mA 0.3 mA 0.2 mA 50 0.1 mA 0 0 2 4 6 8 10 12 Collector-emitter voltage VCE (V) 4 100 hFE IC 200 IC / IB = 10 10 1 VCE = 10 V Forward current transfer ratio hFE Ta = 25°C Collector-emitter saturation voltage VCE(sat) (V) IC VCE 300 Ta = 75°C 25°C 0.1 Ta = 75°C 25°C 150 −25°C 100 50 −25°C 0.01 0 1 10 100 Collector current IC (mA) SJH00012CED 1 000 1 10 100 Collector current IC (mA) 1 000 UNR222x Series IO VIN 104 10 8 5 4 VIN IO 1 000 VO = 5 V Ta = 25°C 103 Input voltage VIN (V) f = 1 MHz IE = 0 Ta = 25°C Output current IO (µA) Collector output capacitance C (pF) (Common base, input open circuited) ob Cob VCB 12 102 10 VO = 0.2 V Ta = 25°C 100 10 1 2 0 0.1 1 10 Collector-base voltage VCB (V) 100 1 0.4 0.6 0.8 1.0 1.2 Input voltage VIN (V) SJH00012CED 1.4 0.1 0.1 1 10 100 Output current IO (mA) 5 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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