DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA2780GR SWITCHING N-CHANNEL POWER MOS FET/SCHOTTKY BARRIER DIODE DESCRIPTION PACKAGE DRAWING (Unit: mm) The µPA2780GR is N-channel Power MOSFET, which built a Schottky Barrier Diode inside. This product is designed for synchronous DC/DC converter application. 8 5 1, 2, 3 : Source 4 : Gate 5, 6, 7, 8: Drain FEATURES • Built a Schottky Barrier Diode • Low on-state resistance RDS(on)1 = 6.2 mΩ TYP. (VGS = 10 V, ID = 7 A) RDS(on)2 = 8.7 mΩ TYP. (VGS = 4.5 V, ID = 7 A) RDS(on)3 = 10.3 mΩ TYP. (VGS = 4.0 V, ID = 7 A) • Low Ciss: Ciss = 1200 pF TYP. • Small and surface mount package (Power SOP8) 1.44 6.0 ±0.3 4 4.4 0.8 0.15 +0.10 –0.05 5.37 MAX. 0.05 MIN. 1.8 MAX. 1 0.5 ±0.2 0.10 1.27 0.78 MAX. 0.40 +0.10 –0.05 0.12 M ORDERING INFORMATION PART NUMBER PACKAGE µPA2780GR Power SOP8 EQUIVALENT CIRCUIT ABSOLUTE MAXIMUM RATINGS (TA = 25°C. All terminals are connected.) Drain to Source Voltage (VGS = 0 V) VDSS 30 V Gate to Source Voltage (VDS = 0 V) VGSS ±20 V Drain Current (DC) [MOSFET] ID(DC) ±14 A ID(pulse) ±56 A IF(AV) 2.5 A PT 2 W Drain Current (pulse) Note1 Average Forward Current Note2 [SCHOTTKY] Total Power Dissipation Note3 [MOSFET] Total Power Dissipation Note3 [SCHOTTKY] Channel & Junction Temperature Storage Temperature PT 1 W Tch, Tj 150 °C Tstg −55 to + 150 °C Drain Gate Gate Protection Diode Schottky Diode Source Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Rectangle wave, 50% Duty Cycle 2 3. Mounted on ceramic substrate of 1200 mm x 2.2 mm Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. G16419EJ1V0DS00 (1st edition) Date Published April 2003 NS CP(K) Printed in Japan 2002 µ PA2780GR ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise noted. All terminals are connected.) CHARACTERISTICS Zero Gate Voltage Drain Current SYMBOL Note IDSS Gate Leakage Current Drain to Source On-state Resistance MIN. TYP. MAX. UNIT VDS = 24 V, VGS = 0 V 50 µA VDS = 24 V, VGS = 0 V, TA = 125°C 10 mA ±10 µA 2.5 V IGSS VGS = ±20 V, VDS = 0 V VGS(off) VDS = 10 V, ID = 1 mA RDS(on)1 VGS = 10 V, ID = 7 A 6.2 7.5 mΩ RDS(on)2 VGS = 4.5 V, ID = 7 A 8.7 11.6 mΩ RDS(on)3 13.7 mΩ Gate Cut-off Voltage Note TEST CONDITIONS 1.0 VGS = 4.0 V, ID = 7 A 10.3 Input Capacitance Ciss VDS = 10 V 1200 pF Output Capacitance Coss VGS = 0 V 570 pF Reverse Transfer Capacitance Crss f = 1 MHz 160 pF Turn-on Delay Time td(on) VDD = 15 V, ID = 7 A 10 ns tr VGS = 10 V 13 ns td(off) RG = 10 Ω 44 ns 11 ns Rise Time Turn-off Delay Time Fall Time tf Total Gate Charge QG VDD = 15 V 12 nC Gate to Source Charge QGS VGS = 5 V 4 nC QGD ID = 14 A 6 nC Gate to Drain Charge Body Diode Forward Voltage Note VF(S-D) IF = 1 A, VGS = 0 V 0.45 0.5 V IF = 1 A, VGS = 0 V, TA = 125°C 0.37 V Reverse Recovery Time trr IF = 7 A, VGS = 0 V 31 ns Reverse Recovery Charge Qrr di/dt = 100 A/µs 22 nC Note Pulsed: PW ≤ 350 µs, Duty Cycle ≤ 2% TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE D.U.T. D.U.T. VGS RL VGS RG PG. Wave Form VDD 0 VGS 10% PG. VDS 90% VGS 0 τ τ = 1 µs Duty Cycle ≤ 1% 2 90% VDS VDS 10% 0 10% Wave Form td(on) tr ton IG = 2 mA RL 50 Ω VDD 90% td(off) tf toff Data Sheet G16419EJ1V0DS µ PA2780GR TYPICAL CHARACTERISTICS (TA = 25°C. All terminals are connected.) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 2.8 120 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 80 60 40 20 0 0 20 40 60 80 100 Mouted on ceramic substrate of 2 1200 mm x 2.2 mm 2.4 MOSFET 2 1.6 1.2 SCHOTTKY 0.8 0.4 0 120 140 160 0 TA - Ambient Temperature - °C 20 40 60 80 100 120 140 160 TA - Ambient Temperature - °C FORWARD BIAS SAFE OPERATING AREA 100 PW = 100 µs ID(pulse) 10 1 ms RDS(on) Limited (at VGS = 10 V) 1 10 ms Power Dissipation Limited 100 ms 0.1 DC Single pulse Mounted on ceramic substrate of 1200 mm2 x 2.2 mm 0.01 0.01 0.1 1 10 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH (MOSFET) 1000 rth(t) - Transient Thermal Resistance - °C/W ID - Drain Current - A ID(DC) Rth(ch-A) = 62.5°C/W 100 10 1 Single pulse 2 Mounted on ceramic substrate of 1200 mm x 2.2 mm 0.1 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet G16419EJ1V0DS 3 µ PA2780GR TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH (SCHOTTKY) rth(t) - Transient Thermal Resistance - °C/W 1000 Rth(j-A) = 125°C/W 100 10 1 Single pulse 2 Mounted on ceramic substrate of 1200 mm x 2.2 mm 0.1 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 80 VGS(off) - Gate Cut-off Voltage - V 3 60 VGS = 10 V 4.5 V 50 40 4.0 V 30 20 10 0 RDS(on) - Drain to Source On-state Resistance - mΩ VDS = 10 V ID = 1 mA 2 1 Pulsed 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0 −50 −25 1 25 50 75 100 125 150 Tch - Channel Temperature - °C DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 30 Pulsed 15 VGS = 4.0 V 10 4.5 V 10 V 5 0 0.1 1 10 100 20 Pulsed 18 16 14 12 10 8 ID = 7 A 6 4 2 0 0 2 4 6 8 10 12 14 16 18 20 VGS - Gate to Source Voltage - V ID - Drain Current - A 4 0 VDS - Drain to Source Voltage - V RDS(on) - Drain to Source On-state Resistance - mΩ ID - Drain Current - A 70 Data Sheet G16419EJ1V0DS DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 10000 20 Pulsed 15 VGS = 4.0 V 4.5 V 10 10 V 5 VGS = 0 V f = 1 MHz Ciss 1000 Coss 100 Crss 10 0 25 50 75 100 125 150 175 0.1 10 100 Tch - Channel Temperature - °C VDS - Drain to Source Voltage - V SWITCHING CHARACTERISTICS DYNAMIC INPUT/OUTPUT CHARACTERISTICS VDS - Drain to Source Voltage - V td(off) tf tr 10 td(on) VDD = 15 V VGS = 10 V RG = 10 Ω 1 0.1 1 10 40 8 35 7 VDD = 24 V 15 V 6V 30 25 6 5 VGS 20 3 10 2 5 1 VDS ID = 14 A 0 100 4 15 0 ID - Drain Current - A 2 4 6 8 0 10 12 14 16 18 20 QG - Gate Charge - nC SOURCE TO DRAIN DIODE FORWARD VOLTAGE SOURCE TO DRAIN DIODE REVERCE CURRENT 100 100000 VGS = 0 V Pulsed 10000 IR - Reverce Current - µA IF - Diode Forward Current - A 1 VGS - Gate to Source Voltage - V 0 −50 −25 100 td(on), tr, td(off), tf - Switching Time - ns CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE Ciss, Coss, Crss - Capacitance - pF RDS(on) - Drain to Source On-state Resistance - mΩ µ PA2780GR TA = 25°C 10 125°C 1 1000 30 V 100 VDS = 24 V 10 1 0.1 0.1 0.01 0 0.2 0.4 0.6 0.8 1 1.2 VF(S-D) - Source to Drain Voltage - V -50 0 50 100 150 Tj - Junction Temperature - °C Data Sheet G16419EJ1V0DS 5 µ PA2780GR • The information in this document is current as of April, 2003. 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