DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA620TT N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING (Unit: mm) FEATURES • 2.5 V drive available • Low on-state resistance RDS(on)1 = 38 mΩ MAX. (VGS = 4.5 V, ID = 2.5 A) RDS(on)2 = 39 mΩ MAX. (VGS = 4.0 V, ID = 2.5 A) RDS(on)3 = 54 mΩ MAX. (VGS = 2.5 V, ID = 2.5 A) 5 4 1 2 3 1.6 6 0~0.05 0.65 S MAX. 0.8 0.15 +0.1 −0.05 0.65 2.1±0.1 2.0±0.2 0.25±0.1 The µPA620TT is a switching device which can be driven directly by a 2.5 V power source. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. ORDERING INFORMATION 0.05 S PACKAGE µPA620TT 6 pin WSOF (1620) 1,2,5,6: Drain 3 : Gate 4 : Source 0.4±0.1 PART NUMBER Marking: WA ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 20 V Gate to Source Voltage (VDS = 0 V) VGSS ±12 V Drain Current (DC) (TA = 25°C) Drain Current (pulse) Note1 Total Power Dissipation Total Power Dissipation Note2 ID(DC) ±5.0 A ID(pulse) ±20 A PT1 0.2 W PT2 1.5 W Channel Temperature Tch 150 °C Storage Temperature Tstg –55 to +150 °C Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2 2. Mounted on FR-4 board of 5000 mm x 1.1 mm, t ≤ 5 sec. 0.2 +0.1 −0.05 0.1 M S EQUIVALENT CIRCUIT Drain Body Diode Gate Gate Protection Diode Source Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. G16111EJ1V0DS00 (1st edition) Date Published September 2002 NS CP(K) Printed in Japan © 2002 µPA620TT ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = 20 V, VGS = 0 V 10 µA Gate Leakage Current IGSS VGS = ±12 V, VDS = 0 V ±10 µA VGS(off) VDS = 10 V, ID = 1.0 mA 0.5 1.0 1.5 V | yfs | VDS = 10 V, ID = 2.5 A 3.0 6.0 RDS(on)1 VGS = 4.5 V, ID = 2.5 A 30 38 mΩ RDS(on)2 VGS = 4.0 V, ID = 2.5 A 31 39 mΩ RDS(on)3 VGS = 2.5 V, ID = 2.5 A 40 54 mΩ Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance S Input Capacitance Ciss VDS = 10 V 450 pF Output Capacitance Coss VGS = 0 V 130 pF Reverse Transfer Capacitance Crss f = 1.0 MHz 90 pF Turn-on Delay Time td(on) VDD = 10 V, ID = 2.5 A 36 ns tr VGS = 4.0 V 210 ns td(off) RG = 10 Ω 150 ns 200 ns Rise Time Turn-off Delay Time Fall Time tf Total Gate Charge QG VDD = 16 V 5.5 nC Gate to Source Charge QGS VGS = 4.0 V 1.0 nC Gate to Drain Charge QGD ID = 5.0 A 2.8 nC IF = 5.0 A, VGS = 0 V 0.87 V Body Diode Forward Voltage VF(S-D) TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE D.U.T. D.U.T. VGS RL VGS RG PG. Wave Form VDD 0 VGS 10% PG. 90% τ τ = 1 µs Duty Cycle ≤ 1% 2 90% VDS VDS 10% 0 10% Wave Form td(on) tr ton RL 50 Ω VDD 90% VDS VGS 0 IG = 2 mA td(off) tf toff Data Sheet G16111EJ1V0DS µPA620TT TYPICAL CHARACTERISTICS (TA = 25°C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 1.6 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % 120 100 80 60 40 20 1.4 1.2 1 0.8 0.6 0.4 Mounted on FR-4 board of 2 5000 m m x 1.1 m m , t ≤ 5 sec. 0.2 0 0 0 25 50 75 100 125 150 175 0 TA - Ambient Temperature - °C 25 50 75 100 125 150 175 TA - Ambient Temperature - °C FORWARD BIAS SAFE OPERATING AREA 100 I D(pulse) 10 PW = 1 m s I D(DC ) 1 10 m s 100 m s 5s 0.1 Single pulse M ounted on FR -4 board of 2 5000 m m x 1.1 m m 0.01 0.1 1 10 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(ch-A) - Transient Thermal Resistance - °C/W ID - Drain Current - A R DS (on) Lim ited (V G S = 4.5 V) 100 10 Single pulse Mounted on FR-4 board of 2 5000 mm x 1.1 mm 1 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet G16111EJ1V0DS 3 µPA620TT DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS 20 10 Pulsed V D S = 10 V P u lsed V GS = 4.5 V ID - Drain Current - A ID - Drain Current - A 1 4.0 V 15 10 2.5 V 5 0 0 .1 T A = 12 5°C 7 5°C 2 5°C −2 5°C 0 .01 0 .00 1 0 .00 01 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 VDS - Drain to Source Voltage - V 1.2 1 0.8 0.6 0.4 100 | yfs | - Forward Transfer Admittance - S VGS(off) - Gate Cut-off Voltage - V V DS = 10 V I D = 1.0 m A 50 150 100 I D = 2.5 A Pulsed V GS = 2.5 V 4.0 V 4.5 V 40 20 0 50 100 150 RDS(on) - Drain to Source On-state Resistance - mΩ RDS(on) - Drain to Source On-state Resistance - mΩ 80 0 Tch - Channel Temperature - °C 4 2 .5 10 T A = − 25°C 25°C 75°C 125°C 1 0.1 0.01 0.01 0.1 1 10 ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE -50 2 V D S = 10 V Pulsed Tch - Channel Temperature - °C 60 1 .5 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 1.4 0 1 VGS - Gate to Source Voltage - V GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE -50 0 .5 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 80 Pulsed 60 40 ID = 2.5 A 20 0 0 2 4 6 8 10 VGS - Gate to Source Voltage - V Data Sheet G16111EJ1V0DS 12 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 80 V GS = 4.5 V Pulsed T A = 125°C 75°C 25°C −25°C 60 40 20 0 0.01 0.1 1 10 100 RDS(on) - Drain to Source On-state Resistance - mΩ RDS(on) - Drain to Source On-state Resistance - mΩ µPA620TT DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 80 V GS = 4.0 V Pulsed T A = 125°C 75°C 25°C −25°C 60 40 20 0 0.01 0.1 80 1000 V GS = 2.5 V Pulsed 40 20 0 0.01 100 SWITCHING CHARACTERISTICS td(on), tr, td(off), tf - Switching Time - ns RDS(on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 60 10 ID - Drain Current - A ID - Drain Current - A T A = 125°C 75°C 25°C −25°C 1 V D D = 10 V V G S = 4.0 V R G = 10 Ω tr tf t d(off) 100 t d(on) 10 0.1 1 10 100 0.1 1 ID - Drain Current - A 10 ID - Drain Current - A CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE SOURCE TO DRAIN DIODE FORWARD VOLTAGE 100 1000 C iss 100 IF - Diode Forward Current - A Ciss, Coss, Crss - Capacitance - pF Pulsed C oss C rss 10 VGS = 0 V f = 1.0 M H z 0.1 10 VGS = 0 V 1 0.1 0.01 1 10 100 0.4 0.6 0.8 1 1.2 1.4 VF(S-D) - Source to Drain Voltage - V VDS - Drain to Source Voltage - V Data Sheet G16111EJ1V0DS 5 µPA620TT DYNAMIC INPUT/OUTPUT CHARACTERISTICS 6 VGS - Gate to Source Voltage - V ID = 5.0 A 5 VDD = 4.0 V 10 V 16 V 4 3 2 1 0 0 1 2 3 4 5 6 QG - Gate Charge - nC 6 Data Sheet G16111EJ1V0DS µPA620TT [MEMO] Data Sheet G16111EJ1V0DS 7 µPA620TT • The information in this document is current as of September, 2002. 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