PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES OUTLINE DIMENSIONS (Unit in mm) • LOW NOISE: NF = 1.3 dB TYP at f = 2 GHz, VCE = 2 V, lc = 3 mA • HIGH GAIN: |S21E|2 • UPA828TF Package Outline TS06 (Top View) 2.1 ± 0.1 1.25 ± 0.1 = 8.5 dB TYP at f = 2 GHz, VCE = 2 V, lc = 20 mA SMALL PACKAGE STYLE: 2 NE687 die in a 2 mm x 1.25 mm x 0.6 mm package 0.65 6 2 5 3 4 +0.10 1.3 DESCRIPTION The UPA828TF has two built-in low-voltage transistors which are designed for low-noise amplification in the VHF to UHF band. The two die are chosen from adjacent locations on the wafer. These features combined with the pin configuration make this device ideal for balanced or mirrored applications. This device is suitable for low voltage/low current, and low noise applications. The thinner package style allows for higher density designs. 1 2.0 ± 0.2 0.6 ± 0.1 0.45 0.22 - 0.05 (All Leads) 0.13 ± 0.05 0 ~ 0.1 PIN CONNECTIONS 1. Collector (Q1) 2. Emitter (Q1) 3. Collector (Q2) 4. Base (Q2) 5. Emitter (Q2) 6. Base (Q1) Note: Pin 1 is the lower left most pin as the package lettering is oriented and read left to right. ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER PACKAGE OUTLINE SYMBOLS PARAMETERS AND CONDITIONS UPA828TF TS06 UNITS MIN ICBO Collector Cutoff Current at VCB = 5 V, IE = 0 µA IEBO Emitter Cutoff Current at VEB = 1 V, IC = 0 µA hFE DC Current Gain1 at VCE = 2 V, IC = 20 mA fT Gain Bandwidth at VCE = 2 V, IC = 20 mA, f = 2 GHz GHz 9 GHz 7 TYP 0.1 0.1 70 140 11 fT Gain Bandwidth at VCE = 1 V, IC = 10 mA, f = 2 GHz Cre Feedback Capacitance2 at VCB = 2 V, IE = 0, f = 1 MHz pF |S21E|2 Insertion Power Gain at VCE = 2 V, IC =20 mA, f = 2 GHz dB |S21E|2 Insertion Power Gain at VCE = 1 V, IC =10 mA, f = 2 GHz dB NF Noise Figure at VCE = 2 V, IC = 3 mA, f = 2 GHz dB NF Noise Figure at VCE = 1 V, IC = 3 mA, f = 2 GHz dB 1.3 2 hFE ratio,VCE = 2 V, Ic = 20 mA 0.85 1.0 hFE1/hFE2 MAX 9 0.4 7 8.5 6 7.5 1.3 2 0.8 hFE1 = Smaller hFE value between Q1 and Q2 hFE2 = Larger hFE value between Q1 and Q2 Notes: 1. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %. 2. Collector to base capacitance when measured with capacitance meter (automatic balanced bridge method), with emitter connected to guard pin of capacitances meter. California Eastern Laboratories UPA828TF ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) SYMBOLS PARAMETERS UNITS RATINGS VCBO Collector to Base Voltage V 5 VCEO Collector to Emitter Voltage V 3 VEBO Emitter to Base Voltage V 2 IC Collector Current mA 30 PT Total Power Dissipation 1 Element 2 Elements mW mW 90 180 TJ Junction Temperature °C 150 TSTG Storage Temperature °C -65 to +150 Note: 1.Operation in excess of any one of these parameters may result in permanent damage. TYPICAL PERFORMANCE CURVES (TA = 25˚C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE COLLECTOR CURRENT vs. DC BASE VOLTAGE 50 200 2 Elements in Total 100 180 mW Per Element 0 Collector Current, lc (mA) Total Power Dissipation, PT (mW) VCE = 2 V 90 mW 50 100 150 30 20 10 0 0.5 1.0 Ambient Temperature, TA (°C) DC Base Voltage, VBE (V) COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE DC CURRENT GAIN vs. COLLECTOR CURRENT 25 500 20 200 µA 180 µA 160 µA 15 140 µA 120 µA 10 100 µA 80 µA 60 µA 5 40 µA DC Current Gain,hFE Collector Current, lc (mA) 40 200 VCE = 2 V 100 VCE = 1 V 50 20 lB = 20 µA 10 0 1.0 2.0 3.0 Collector to Emitter Voltage, VCE (V) 1 2 5 10 20 Collector Current, lc (mA) 50 100 UPA828TF TYPICAL PERFORMANCE CURVES (TA = 25˚C) INSERTION POWER GAIN vs. COLLECTOR CURRENT GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 10 f = 2 GHz Insertion Power Gain, |S21E|2 (dB) Gain Bandwidth Product, fT (GHz) 15 VCE = 2 V 10 VCE = 1 V 5 f = 2 GHz VCE = 2 V VCE = 1 V 5 0 1 2 3 5 7 10 20 1 3 5 7 10 Collector Current, lc (mA) Collector Current, lc (mA) NOISE FIGURE vs. COLLECTOR CURRENT FEEDBACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE 3 20 Feedback Capacitance, CRE (pF) 0.8 f = 2 GHz Noise Figure, NF (dB) 2 2 VCE = 2 V VCE = 1 V 1 1 2 3 5 Collector Current, lc (mA) 7 10 f = 1 GHz 0.6 0.4 0.2 0 2.0 4.0 6.0 8.0 Collector to Base Voltage, VCB (V) 10.0 UPA828TF TYPICAL SCATTERING PARAMETERS (TA = 25°C) Q1 VCE = 2 V, IC = 1 mA, ZO = 50 Ω FREQUENCY (GHz) 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 1.20 1.50 1.70 2.00 2.50 3.00 S11 MAG 0.98 0.96 0.95 0.92 0.90 0.87 0.83 0.80 0.76 0.72 0.64 0.53 0.47 0.43 0.43 0.48 S21 ANG -6.87 -13.71 -20.79 -27.69 -34.82 -42.10 -49.35 -56.87 -64.78 -72.15 -88.71 -115.63 -133.52 -161.16 158.63 131.49 MAG 2.42 2.40 2.42 2.39 2.39 2.36 2.34 2.32 2.32 2.26 2.22 2.10 1.99 1.81 1.57 1.35 S12 ANG 171.77 164.17 157.17 150.27 143.98 138.23 132.19 126.78 120.75 115.35 104.80 89.64 80.39 68.21 50.02 35.61 MAG 0.02 0.04 0.07 0.09 0.10 0.12 0.14 0.15 0.16 0.17 0.18 0.20 0.20 0.20 0.20 0.20 S22 ANG 84.43 79.61 74.54 69.50 65.17 60.29 56.25 52.12 48.48 45.16 38.79 31.12 27.37 23.31 20.11 20.44 MAG 0.99 0.99 0.97 0.95 0.92 0.90 0.87 0.84 0.81 0.77 0.72 0.63 0.59 0.53 0.46 0.41 ANG -4.42 -8.84 -12.97 -17.23 -21.05 -25.13 -28.47 -32.22 -34.98 -38.02 -43.16 -49.93 -53.75 -59.13 -67.98 -79.07 Q2 VCE = 2 V, IC = 1 mA, ZO = 50 Ω FREQUENCY (GHz) 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 1.20 1.50 1.70 2.00 2.50 3.00 S11 MAG 0.98 0.96 0.94 0.92 0.89 0.86 0.83 0.80 0.76 0.72 0.64 0.54 0.48 0.43 0.39 0.41 S21 ANG -6.74 -13.51 -20.37 -27.07 -33.96 -40.84 -47.75 -54.58 -61.78 -68.15 -82.34 -103.94 -117.50 -138.81 -171.15 163.33 MAG 2.44 2.41 2.43 2.39 2.39 2.37 2.34 2.32 2.31 2.25 2.20 2.09 1.98 1.84 1.64 1.45 S12 ANG 171.33 163.49 156.32 149.41 143.02 137.27 131.22 125.82 119.93 114.65 104.41 90.06 81.41 69.85 52.42 37.62 MAG 0.02 0.04 0.06 0.08 0.10 0.12 0.13 0.14 0.15 0.16 0.18 0.19 0.20 0.21 0.22 0.24 S22 ANG 84.61 79.80 74.82 69.31 65.85 61.45 57.88 54.28 51.24 48.38 43.56 38.22 35.84 33.47 32.53 33.20 MAG 0.99 0.98 0.96 0.94 0.91 0.88 0.85 0.81 0.78 0.74 0.68 0.60 0.54 0.48 0.38 0.30 ANG -4.39 -8.74 -12.93 -17.05 -20.67 -24.51 -27.55 -30.99 -33.61 -36.17 -40.86 -47.35 -51.11 -57.05 -68.86 -86.04 UPA828TF TYPICAL SCATTERING PARAMETERS (TA = 25°C) Q1 VCE = 2 V, IC = 5 mA, ZO = 50 Ω FREQUENCY (GHz) 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 1.20 1.50 1.70 2.00 2.50 3.00 S11 MAG 0.87 0.81 0.73 0.64 0.55 0.48 0.40 0.34 0.30 0.26 0.21 0.20 0.21 0.25 0.32 0.40 S21 ANG -14.09 -27.42 -40.88 -53.67 -65.97 -77.45 -88.32 -99.03 -109.36 -120.28 -143.41 -178.69 162.38 141.55 120.25 107.18 MAG 10.64 9.95 9.52 8.93 8.31 7.63 7.00 6.43 5.89 5.43 4.67 3.84 3.42 2.93 2.38 1.99 S12 ANG 163.29 150.51 139.49 129.93 121.13 113.73 106.72 100.97 95.86 91.26 83.34 73.31 67.63 59.55 47.59 36.87 MAG 0.02 0.04 0.05 0.06 0.07 0.08 0.09 0.10 0.11 0.11 0.13 0.15 0.16 0.18 0.22 0.25 S22 ANG 79.93 72.08 66.23 61.90 59.41 57.14 55.84 55.02 54.11 53.70 52.72 50.94 49.64 47.47 43.28 38.39 MAG 0.95 0.88 0.79 0.71 0.64 0.58 0.53 0.49 0.45 0.43 0.38 0.32 0.30 0.26 0.21 0.18 ANG -11.97 -22.31 -30.28 -36.76 -41.09 -45.05 -47.68 -50.09 -52.09 -53.78 -57.08 -62.84 -66.88 -74.05 -90.62 -114.1020 Q2 VCE = 2 V, IC = 5 mA, ZO = 50 Ω FREQUENCY (GHz) 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 1.20 1.50 1.70 2.00 2.50 3.00 S11 MAG 0.87 0.80 0.72 0.63 0.54 0.47 0.41 0.35 0.31 0.28 0.23 0.18 0.17 0.18 0.22 0.29 S21 ANG -13.54 -26.19 -38.63 -49.88 -59.77 -68.54 -75.97 -82.95 -89.34 -95.57 -108.52 -130.79 -146.39 -168.80 163.35 145.87 MAG 10.54 9.77 9.27 8.60 7.92 7.20 6.55 5.99 5.47 5.05 4.37 3.60 3.24 2.83 2.35 2.02 S12 ANG 162.00 148.74 137.38 127.63 118.86 111.69 105.17 99.70 94.96 90.71 83.80 73.93 68.27 60.37 48.33 37.27 MAG 0.02 0.04 0.05 0.06 0.07 0.08 0.09 0.10 0.11 0.12 0.14 0.16 0.18 0.21 0.26 0.30 S22 ANG 80.48 73.48 68.44 65.14 63.41 61.89 61.08 60.63 60.13 59.77 58.88 56.83 55.32 52.64 47.65 41.79 MAG 0.94 0.87 0.77 0.69 0.62 0.56 0.51 0.47 0.44 0.41 0.36 0.30 0.27 0.21 0.13 0.05 ANG -11.69 -21.26 -27.99 -32.99 -35.87 -38.30 -39.59 -40.79 -41.55 -42.06 -43.16 -45.15 -46.69 -49.56 -58.20 -87.46 UPA828TF TYPICAL SCATTERING PARAMETERS (TA = 25°C) Q1 VCE = 2 V, IC = 10 mA, ZO = 50 Ω FREQUENCY (GHz) 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 1.20 1.50 1.70 2.00 2.50 3.00 S11 MAG 0.75 0.64 0.51 0.41 0.32 0.26 0.22 0.19 0.16 0.15 0.14 0.17 0.20 0.24 0.32 0.39 S21 ANG -21.25 -40.55 -58.49 -73.72 -86.53 -98.65 -110.38 -122.98 -136.32 -150.20 -177.47 152.02 138.84 125.28 111.91 102.41 MAG 18.39 16.34 14.49 12.55 10.81 9.39 8.27 7.38 6.63 6.04 5.10 4.13 3.67 3.13 2.53 2.12 S12 ANG 156.90 140.45 126.78 116.10 107.94 101.73 96.47 92.04 88.10 84.48 78.09 69.70 64.75 57.58 46.95 36.99 MAG 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.10 0.10 0.12 0.15 0.16 0.19 0.22 0.26 ANG 155.05 137.91 124.24 113.99 106.39 100.66 95.75 91.57 87.88 84.54 78.47 70.36 65.54 58.43 47.37 36.88 MAG 0.02 0.03 0.04 0.06 0.07 0.08 0.09 0.10 0.11 0.12 0.14 0.17 0.19 0.22 0.27 0.31 S22 ANG 77.20 69.69 65.76 64.03 63.08 62.52 62.35 62.04 61.54 61.35 59.95 57.49 55.54 52.37 46.88 40.73 MAG 0.89 0.77 0.65 0.56 0.49 0.44 0.40 0.37 0.34 0.32 0.29 0.25 0.23 0.20 0.16 0.15 ANG 78.63 72.31 69.65 68.34 68.06 67.81 67.13 66.95 66.28 65.72 64.27 61.30 59.28 55.73 49.39 42.38 MAG 0.88 0.75 0.63 0.54 0.48 0.43 0.40 0.37 0.34 0.32 0.29 0.24 0.21 0.16 0.08 0.00 ANG -17.80 -30.80 -38.64 -43.82 -46.87 -49.28 -50.98 -52.53 -53.99 -55.48 -58.71 -65.42 -70.84 -80.75 -104.52 -134.83 Q2 VCE = 2 V, IC = 10 mA, ZO = 50 Ω FREQUENCY (GHz) 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 1.20 1.50 1.70 2.00 2.50 3.00 S11 MAG 0.75 0.63 0.50 0.40 0.33 0.28 0.24 0.21 0.18 0.16 0.13 0.11 0.12 0.14 0.20 0.27 S21 ANG -19.94 -37.17 -51.43 -61.93 -69.47 -76.10 -81.76 -87.66 -93.58 -99.63 -113.93 -140.96 -158.80 179.16 155.56 141.08 MAG 18.04 15.75 13.66 11.63 9.93 8.60 7.55 6.74 6.07 5.53 4.70 3.85 3.45 2.99 2.48 2.11 S12 S22 ANG -16.88 -27.99 -33.45 -36.33 -37.48 -38.05 -38.12 -38.22 -38.12 -38.04 -38.23 -39.44 -40.33 -42.20 -46.33 134.74 UPA828TF TYPICAL SCATTERING PARAMETERS (TA = 25°C) Q1 VCE = 2 V, IC = 20 mA, ZO = 50 Ω FREQUENCY (GHz) 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 1.20 1.50 1.70 2.00 2.50 3.00 S11 MAG 0.56 0.42 0.30 0.23 0.18 0.15 0.13 0.12 0.12 0.13 0.15 0.19 0.21 0.26 0.33 0.40 S21 ANG -32.81 -58.87 -78.37 -94.58 -109.66 -124.96 -140.67 -156.60 -171.52 175.13 154.42 135.04 126.81 117.40 107.46 99.59 MAG 27.95 22.23 17.58 14.16 11.73 9.97 8.66 7.65 6.85 6.20 5.21 4.20 3.73 3.17 2.55 2.14 S12 ANG 148.87 128.52 115.09 106.19 99.79 94.85 90.57 86.95 83.61 80.43 74.78 67.22 62.80 55.90 46.23 36.41 MAG 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.08 0.09 0.10 0.12 0.15 0.17 0.19 0.23 0.27 S22 ANG 75.30 70.35 68.59 68.35 68.61 68.48 68.04 67.57 66.89 66.27 64.40 61.17 58.57 55.05 48.66 42.04 MAG 0.81 0.64 0.51 0.43 0.38 0.34 0.31 0.29 0.27 0.26 0.24 0.21 0.19 0.17 0.14 0.14 ANG -23.54 -37.09 -43.16 -46.08 -47.60 -48.85 -49.96 -51.00 -52.09 -53.64 -57.12 -65.08 -71.65 -83.64 -112.73 -146.05 Q2 VCE = 2 V, IC = 20 mA, ZO = 50 Ω FREQUENCY S11 S21 S12 S22 (GHz) MAG ANG MAG ANG MAG ANG MAG ANG 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 1.20 1.50 1.70 2.00 2.50 3.00 0.56 0.41 0.31 0.24 0.19 0.16 0.14 0.12 0.11 0.10 0.08 0.09 0.10 0.13 0.20 0.28 -29.15 -48.92 -60.35 -68.27 -74.29 -80.26 -85.96 -92.36 -99.97 -107.48 -126.82 -159.16 -175.51 167.06 149.55 137.58 27.12 20.90 16.10 12.87 10.65 9.05 7.87 6.97 6.25 5.67 4.79 3.92 3.50 3.03 2.50 2.13 146.32 125.74 113.19 104.89 98.93 94.42 90.42 86.91 83.77 80.84 75.44 68.12 63.56 56.95 46.34 35.99 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.11 0.12 0.14 0.17 0.19 0.22 0.27 0.32 77.78 74.05 72.89 73.12 72.74 72.28 71.80 71.03 70.29 69.37 67.25 63.75 61.27 57.22 50.20 42.85 0.80 0.63 0.51 0.44 0.39 0.36 0.33 0.31 0.29 0.28 0.25 0.21 0.18 0.14 0.06 0.03 -21.74 -31.76 -34.75 -35.38 -34.92 -34.40 -33.68 -33.35 -33.01 -32.76 -32.69 -33.54 -34.18 -34.48 -30.22 93.61 ORDERING INFORMATION PART NUMBER UPA828TF-T1 QUANTITY 3000 PACKAGING Tape & Reel EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM PRINTED IN USA ON RECYCLED PAPER -2/99 DATA SUBJECT TO CHANGE WITHOUT NOTICE