BIPOLAR ANALOG INTEGRATED CIRCUIT µPC8215TU SiGe LOW NOISE AMPLIFIER FOR GPS/MOBILE COMMUNICATIONS DESCRIPTION The µPC8215TU is a silicon germanium (SiGe) monolithic integrated circuit designed as low noise amplifier for GPS and mobile communications. The package is 8-pin lead-less minimold suitable for surface mount. This IC is manufactured using our 50 GHz fmax UHS2 (Ultra High Speed Process) SiGe bipolar process. FEATURES • Low noise : NF = 1.3 dB TYP. @ VCC = 3.0 V • High gain : GP = 27.0 dB TYP. @ VCC = 3.0 V • Low distortion : OIP3 = +12.5 dBm TYP. @ VCC = 3.0 V • High-density surface mounting : 8-pin lead-less minimold package (2.0 × 2.2 × 0.5 mm) • High performance with minimum external components • Output matched to 50 Ω APPLICATION • Low noise amplifier for GPS and mobile communications ORDERING INFORMATION Part Number Order Number µPC8215TU-E2 µPC8215TU-E2-A Package 8-pin lead-less minimold (Pb-Free) Note Marking 8215 Supplying Form • 8 mm wide embossed taping • Pin 5, 6, 7, 8 indicates pull-out direction of tape • Qty 5 kpcs/reel Note With regards to terminal solder (the solder contains lead) plated products (conventionally plated), contact your nearby sales office. Remark To order evaluation samples, contact your nearby sales office. Part number for sample order: µPC8215TU Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. Document No. PU10546EJ01V0DS (1st edition) Date Published June 2005 CP(K) µPC8215TU PIN CONNECTIONS AND INTERNAL BLOCK DIAGRAM GND 1 8 GND INPUT 2 7 OUTPUT GND 3 6 GND GND 4 5 VCC ABSOLUTE MAXIMUM RATINGS Parameter Symbol Test Conditions Ratings Unit 4.0 V 1.06 W Supply Voltage VCC TA = +25°C Power Dissipation of Package PD TA = +85°C Operating Ambient Temperature TA −40 to +85 °C Storage Temperature Tstg −55 to +150 °C Input Power Pin +10 dBm Note Note Mounted on double-side copper-clad 50 × 50 × 1.6 mm epoxy glass PWB RECOMMENDED OPERATING RANGE Parameter Symbol MIN. TYP. MAX. Unit Supply Voltage VCC 2.7 3.0 3.3 V Operating Ambient Temperature TA −25 +25 +85 °C Operating Frequency Range fin − 1 575 − MHz ELECTRICAL CHARACTERISTICS (TA = +25°C, VCC = 3.0 V, fin = 1 575 MHz, unless otherwise specified) Parameter Symbol Test Conditions TYP. MAX. Unit − 10.0 13.0 mA Circuit Current ICC Power Gain GP 24.0 27.0 30.0 dB Noise Figure NF − 1.3 1.5 dB OIP3 − +12.5 − dBm Input Return Loss RLin 6.0 7.0 − dB Output Return Loss RLout 10 14.0 − dB ISL 30 40.0 − dB PO (1 dB) − +5.0 − dBm Output 3rd Order Distortion Intercept No Signal MIN. Point Isolation Gain 1 dB Compression Output Power 2 Data Sheet PU10546EJ01V0DS µPC8215TU TEST CIRCUIT INPUT 2.4 nH 1 8 2 7 OUTPUT 100 pF 12 nH 100 pF 3 6 4 5 VCC 100 pF 0.1 µF Notes 1. High performance with minimum external components. 2. Output matched to 50 Ω. ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD 12 nH 1 2 3 4 8 7 6 5 INPUT 100 pF OUTPUT 2.4 nH 100 pF 100 pF 0.1µF Notes 1. 30 × 30 × 0.51 mm double sided copper-clad hydrocarbon ceramic woven glass PWB (Rogers : R04003, εr = 3.38). 2. Au plated on pattern 3. 12 nH/2.4 nH : Murata LQP15M 4. 100 pF/0.1 µF : Murata GRM15 5. represents cutout 6. : Through holes Data Sheet PU10546EJ01V0DS 3 µPC8215TU TYPICAL CHARACTERISTICS (TA = +25°C, VCC = 3.0 V, unless otherwise specified) ISOLATION vs. FREQUENCY INPUT RETURN LOSS vs. FREQUENCY 0 0 –10 –2 Isolation ISL (dB) Input Return Loss RLin (dB) –1 –3 –4 –5 –6 1.575 GHz –9 0.1 –30 –40 –50 –60 –70 0.1 10 1.0 POWER GAIN vs. FREQUENCY OUTPUT RETURN LOSS vs. FREQUENCY 0 Output Return Loss RLout (dB) 40 35 30 25 20 15 10 1.575 GHz 5 0 0.1 10 1.0 –5 –15 –20 –25 –30 0.1 OUTPUT POWER, IM3 vs. INPUT POWER 0 Pout –10 –20 –30 IM3 –40 –50 –60 –70 –50 –40 –30 –20 1.0 Frequency f (GHz) +20 fin1 = 1 575 MHz +10 fin2 = 1 576 MHz 1.575 GHz –10 Frequency f (GHz) Output Power Pout (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) 10 Frequency f (GHz) 45 –80 –60 1.0 Frequency f (GHz) 50 Power Gain GP (dB) –20 –7 –8 –10 0 Input Power Pin (dBm) Remark The graphs indicate nominal characteristics. 4 1.575 GHz Data Sheet PU10546EJ01V0DS 10 µPC8215TU S-PARAMETERS (TA = +25°C, VCC = 3.0 V, monitored at connector on board) S11−FREQUENCY START : 600.000 000 MHz STOP : 2 000.000 000 MHz 1 1 : 1 575 MHz 27.684 Ω 29.132 Ω 2.9438 nH S22−FREQUENCY START : 600.000 000 MHz STOP : 2 000.000 000 MHz 1 1 : 1 575 MHz 57.880 Ω Data Sheet PU10546EJ01V0DS –12.447 Ω 8.1185 pF 5 µPC8215TU PACKAGE DIMENSIONS 8-PIN LEAD-LESS MINIMOLD (UNIT: mm) (Top View) (Bottom View) (0.65) (0.65) (0.6) (0.3) 3 4 8 0.4±0.1 (0.6) 7 0.4±0.1 2 6 (1.4) 1 5 (0.35) (0.35) 5 (0.35)(0.35) 6 (0.6) 7 (0.5) (0.5) 8 2.0±0.1 2.2±0.05 2.0±0.1 0.16±0.05 0.125+0.1 –0.05 0.5±0.03 (0.25) (0.25) Remark ( ) : Reference value 6 Data Sheet PU10546EJ01V0DS (0.75) 4 3 (0.75) 2 1 µPC8215TU NOTES ON CORRECT USE (1) Observe precautions for handling because of electro-static sensitive devices. (2) Form a ground pattern as widely as possible to minimize ground impedance (to prevent undesired oscillation). All the ground terminals must be connected together with wide ground pattern to decrease impedance difference. (3) The bypass capacitor should be attached to VCC line. RECOMMENDED SOLDERING CONDITIONS This product should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your nearby sales office. Soldering Method Infrared Reflow Wave Soldering Soldering Conditions Condition Symbol Peak temperature (package surface temperature) : 260°C or below Time at peak temperature : 10 seconds or less Time at temperature of 220°C or higher : 60 seconds or less Preheating time at 120 to 180°C : 120±30 seconds Maximum number of reflow processes Maximum chlorine content of rosin flux (% mass) : 3 times : 0.2%(Wt.) or below Peak temperature (molten solder temperature) : 260°C or below Time at peak temperature : 10 seconds or less IR260 WS260 Preheating temperature (package surface temperature) : 120°C or below Maximum number of flow processes Maximum chlorine content of rosin flux (% mass) Partial Heating : 1 time : 0.2%(Wt.) or below Peak temperature (terminal temperature) : 350°C or below Soldering time (per side of device) Maximum chlorine content of rosin flux (% mass) : 3 seconds or less : 0.2%(Wt.) or below HS350 Caution Do not use different soldering methods together (except for partial heating). Data Sheet PU10546EJ01V0DS 7 4590 Patrick Henry Drive Santa Clara, CA 95054-1817 Telephone: (408) 919-2500 Facsimile: (408) 988-0279 Subject: Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive 2003/11/EC Restriction on Penta and Octa BDE. CEL Pb-free products have the same base part number with a suffix added. The suffix –A indicates that the device is Pb-free. The –AZ suffix is used to designate devices containing Pb which are exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals. All devices with these suffixes meet the requirements of the RoHS directive. This status is based on CEL’s understanding of the EU Directives and knowledge of the materials that go into its products as of the date of disclosure of this information. Restricted Substance per RoHS Concentration Limit per RoHS (values are not yet fixed) Concentration contained in CEL devices -A Not Detected Lead (Pb) < 1000 PPM Mercury < 1000 PPM Not Detected Cadmium < 100 PPM Not Detected Hexavalent Chromium < 1000 PPM Not Detected PBB < 1000 PPM Not Detected PBDE < 1000 PPM Not Detected -AZ (*) If you should have any additional questions regarding our devices and compliance to environmental standards, please do not hesitate to contact your local representative. Important Information and Disclaimer: Information provided by CEL on its website or in other communications concerting the substance content of its products represents knowledge and belief as of the date that it is provided. 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