DATA SHEET GaAs INTEGRATED CIRCUIT µPG2128TB L-BAND PA DRIVER AMPLIFIER DESCRIPTION The µPG2128TB is GaAs MMIC for PA driver amplifier which were developed for mobile phone and another Lband application. The device can operate with 3.0 V TYP., having the high gain and low distortion. FEATURES • Operation frequency : fopt = 1 429 to 1 453 MHz (1 441 MHz TYP.) • Supply voltage : VDD1 = 2.7 to 3.3 V (3.0 V TYP.) • Circuit current : IDD = 40 mA TYP. @ VDD1 = 3.0 V, VDD2 = 3.5 V, VAGC = 2.5 V, Pout = +12 dBm : VDD2 = 2.7 to 4.2 V (3.5 V TYP.) • High power gain : GP = 28 dB TYP. @ VDD1 = 3.0 V, VDD2 = 3.5 V, VAGC = 2.5 V, Pin = −16 dBm • Gain control range : GCR = 40 dB TYP. @ VDD1 = 3.0 V, VDD2 = 3.5 V, VAGC = 0.5 to 2.5 V, • Low distortion : Padj1 = −60 dBc TYP. @ VDD1 = 3.0 V, VDD2 = 3.5 V, VAGC = 2.5 V, Pout = +12 dBm, Pin = −16 dBm ∆f = ±50 kHz, 21 kHz Bandwidth. • High-density surface mounting : 6-pin super minimold package (2.0 × 1.25 × 0.9 mm) APPLICATION • Digital Cellular: PDC 1.5 GHz etc. ORDERING INFORMATION Part Number µPG2128TB-E3 Package Marking 6-pin super minimold G2M Supplying Form • Embossed tape 8 mm wide • Pin 1, 2, 3 face the perforation side of the tape • Qty 3 kpcs/reel Remark To order evaluation samples, contact your nearby sales office. Part number for sample order: µPG2128TB Caution Electro-static sensitive devices The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices representative for availability and additional information. Document No. PG10062EJ01V0DS (1st edition) Date Published February 2002 CP(K) Printed in Japan NEC Compound Semiconductor Devices 2002 µPG2128TB PIN CONNECTIONS, MARKING AND INTERNAL BLOCK DIAGRAM 3 2 1 G2M (Top View) (Top View) (Bottom View) 4 3 4 4 3 5 2 5 5 2 6 1 6 6 1 ABSOLUTE MAXIMUM RATINGS (Unless otherwise specified, T A = +25°°C) Parameter Symbol Ratings Unit Supply Voltage1, 2 VDD1, 2 6.0 V AGC Control Voltage VAGC 6.0 V Pin −8 dBm Input Power 140 Note Power Dissipation PD mW Operating Ambient Temperature TA −30 to +90 °C Storage Temperature Tstg −35 to +150 °C Note Mounted on double copper-clad 50 × 50 × 1.6 mm epoxy glass PWB, TA = +85°C RECOMMENDED OPERATING RENGE (TA = +25°°C) Parameter Symbol MIN. TYP. MAX. Unit Supply Voltage1 VDD1 2.7 3.0 3.3 V Supply Voltage2 VDD2 2.7 3.5 4.2 V AGC Control Voltage VAGC 0 − 2.5 V Pin − −16 −10 dBm Input Power 2 Data Sheet PG10062EJ01V0DS Pin No. Pin Name 1 VDD1 2 GND 3 OUTPUT/VDD2 4 VAGC 5 GND 6 INPUT µPG2128TB ELECTRICAL CHARACTERISTICS (Unless otherwise specified, TA = +25°°C, VDD1 = 3.0 V, VDD2 = 3.5 V, π/4DQPSK modulated signal input, External input and output matching) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit 1 429 − 1 453 MHz Operating Frequency fopt Circuit Current IDD Pout = +12 dBm, VAGC = 2.5 V − 40 48 mA Power Gain GP Pin = −16 dBm, VAGC = 2.5 V 26 28 − dB Adjacent Channel Power Leakage 1 Padj1 Pout = +12 dBm, VAGC = 2.5 V ∆f = ±50 kHz, 21 kHz Bandwidth − −60 −55 dBc Adjacent Channel Power Leakage 2 Padj2 Pout = +12 dBm, VAGC = 2.5 V ∆f = ±100 kHz, 21 kHz Bandwidth − −70 −65 dBc Gain Control Range GCR Pin = −16 dBm, VAGC = 0.5 to 2.5 V 35 40 − dB Gain Control Current IAGC VAGC = 0.5 to 2.5 V − 250 500 µA Data Sheet PG10062EJ01V0DS 3 µPG2128TB EVALUATION CIRCUIT (VDD1 = 3.0 V, VDD2 = 3.5 V, f = 1 441 MHz) VDD2 VDD1 1 000 pF 1 000 pF 2.7 nH 2 pF 3 pF OUT 1 2 3 G2M 6 5 4 1 kΩ VAGC 1 000 pF 8.2 nH IN 5 pF 6.8 nH The application circuits and their parameters are for reference only and are not intended for use in actual design-ins. 4 Data Sheet PG10062EJ01V0DS µPG2128TB ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD Vdd1 Vdd2 L1 C3 C 4 C1 OUT C2 6 C5 L3 L2 C IN Vagc R1 AGC AMP USING THE NEC EVALUATION BOARD Symbol Values Part Number Maker L1 2.7 nH TFL0816-2N7 Susumu L2 6.8 nH TFL0816-6N8 Susumu L3 8.2 nH TFL0816-8N2 Susumu 1 000 pF GRM39CH102J50 muRata C2 2 pF GRM39CK020C50 muRata C4 3 pF GRM39CJ030C50 muRata C5 5 pF GRM39CJ050C50 muRata R1 1 kΩ RR0816 Susumu C1, C3, C6 Data Sheet PG10062EJ01V0DS 5 µPG2128TB PACKAGE DIMENSIONS 6-PIN SUPER MINIMOLD (UNIT: mm) 2.1±0.1 0.2+0.1 –0.05 0.65 0.65 1.3 2.0±0.2 1.25±0.1 6 Data Sheet PG10062EJ01V0DS 0.15+0.1 –0.05 0 to 0.1 0.7 0.9±0.1 0.1 MIN. µPG2128TB RECOMMENDED SOLDERING CONDITIONS This product should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your nearby sales office. Soldering Method Soldering Conditions Condition Symbol Infrared Reflow Peak temperature (package surface temperature) Time at peak temperature Time at temperature of 220°C or higher Preheating time at 120 to 180°C Maximum number of reflow processes Maximum chlorine content of rosin flux (% mass) : 260°C or below : 10 seconds or less : 60 seconds or less : 120±30 seconds : 3 times : 0.2%(Wt.) or below IR260 VPS Peak temperature (package surface temperature) Time at temperature of 200°C or higher Preheating time at 120 to 150°C Maximum number of reflow processes Maximum chlorine content of rosin flux (% mass) : 215°C or below : 25 to 40 seconds : 30 to 60 seconds : 3 times : 0.2%(Wt.) or below VP215 Wave Soldering Peak temperature (molten solder temperature) Time at peak temperature Preheating temperature (package surface temperature) Maximum number of flow processes Maximum chlorine content of rosin flux (% mass) : 260°C or below : 10 seconds or less : 120°C or below : 1 time : 0.2%(Wt.) or below WS260 Partial Heating Peak temperature (pin temperature) Soldering time (per side of device) Maximum chlorine content of rosin flux (% mass) : 350°C or below : 3 seconds or less : 0.2%(Wt.) or below HS350 Caution Do not use different soldering methods together (except for partial heating). Data Sheet PG10062EJ01V0DS 7 µPG2128TB • The information in this document is current as of February, 2002. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. • NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. 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(Note) (1) "NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd. and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). M8E 00. 4 - 0110 8 Data Sheet PG10062EJ01V0DS µPG2128TB SAFETY INFORMATION ON THIS PRODUCT Caution GaAs Products The product contains gallium arsenide, GaAs. GaAs vapor and powder are hazardous to human health if inhaled or ingested. • Do not destroy or burn the product. • Do not cut or cleave off any part of the product. • Do not crush or chemically dissolve the product. • Do not put the product in the mouth. Follow related laws and ordinances for disposal. The product should be excluded from general industrial waste or household garbage. 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