DATA SHEET GaAs INTEGRATED CIRCUIT µPG2134TB L-BAND PA DRIVER AMPLIFIER DESCRIPTION The µPG2134TB is GaAs MMIC for PA driver amplifier which were developed for mobile phone and another Lband application. This device can operate with 3.0 V TYP., having the high gain and low distortion. This device is housed in a 6-pin super minimold package. And this package is able to high-density surface mounting. FEATURES • Operation frequency : fopt = 1 429 to 1 453 MHz (1 441 MHz TYP.) • Supply voltage : VDD1 = 2.7 to 3.3 V (3.0 V TYP.) • Circuit current : IDD = 28 mA TYP. @ VDD1 = 3.0 V, VDD2 = 3.5 V, VAGC = 2.5 V, Pin = −15 dBm : VDD2 = 2.7 to 4.2 V (3.5 V TYP.) • Power gain : GP = 28 dB TYP. @ VDD1 = 3.0 V, VDD2 = 3.5 V, VAGC = 2.5 V, Pin = −15 dBm • Gain control range : GCR = 42 dB TYP. @ VDD1 = 3.0 V, VDD2 = 3.5 V, VAGC = 0.5 to 2.5 V, • Low distortion : Padj1 = −60 dBc TYP. @ VDD1 = 3.0 V, VDD2 = 3.5 V, VAGC = 2.5 V, Pout = +10 dBm, Pin = −15 dBm f = 1 441 MHz, ∆f = ±50 kHz, 21 kHz Bandwidth • High-density surface mounting : 6-pin super minimold package (2.0 × 1.25 × 0.9 mm) APPLICATION • Digital Cellular: PDC 1.5 GHz etc. ORDERING INFORMATION Part Number µPG2134TB-E3 Package 6-pin super minimold Marking G3B Supplying Form • Embossed tape 8 mm wide • Pin 1, 2, 3 face the perforation side of the tape • Qty 3 kpcs/reel Remark To order evaluation samples, contact your nearby sales office. Part number for sample order: µPG2134TB Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices representative for availability and additional information. Document No. PG10194EJ01V0DS (1st edition) Date Published October 2002 CP(K) Printed in Japan NEC Compound Semiconductor Devices 2002 µPG2134TB PIN CONNECTIONS AND INTERNAL BLOCK DIAGRAM (Top View) G3B 3 2 1 (Top View) (Bottom View) 4 3 4 4 3 5 2 5 5 2 6 1 6 6 1 Pin No. Pin Name 1 VDD1 2 GND 3 OUTPUT/VDD2 4 VAGC 5 GND 6 INPUT ABSOLUTE MAXIMUM RATINGS (TA = +25°°C, unless otherwise specified) Parameter Supply Voltage1, 2 Gain Control Voltage Input Power Symbol Ratings Unit VDD1, 2 6.0 V VAGC 6.0 V Pin −8 dBm 140 Note Power Dissipation PD mW Operating Ambient Temperature TA −30 to +90 °C Storage Temperature Tstg −35 to +150 °C Note Mounted on double-sided copper-clad 50 × 50 × 1.6 mm epoxy glass PWB, TA = +85°C RECOMMENDED OPERATING RENGE (TA = +25°°C, unless otherwise specified) Parameter Symbol MIN. TYP. MAX. Unit fopt 1 429 1 441 1 453 MHz Supply Voltage1 VDD1 2.7 3.0 3.3 V Supply Voltage2 VDD2 2.7 3.5 4.2 V Gain Control Voltage VAGC 0 − 2.5 V Pin − −15 −10 dBm Operating Frequency Input Power 2 Data Sheet PG10194EJ01V0DS µPG2134TB ELECTRICAL CHARACTERISTICS (TA = +25°°C, VDD1 = 3.0 V, VDD2 = 3.5 V, π/4DQPSK modulated signal input, with external input and output matching, unless otherwise specified) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit 1 429 1 441 1 453 MHz Operating Frequency fopt Circuit Current IDD Pin = −15 dBm, VAGC = 2.5 V − 28 35 mA Power Gain GP Pin = −15 dBm, VAGC = 2.5 V 26 28 − dB Adjacent Channel Power Leakage 1 Padj1 Pout = +10 dBm, VAGC = 2.5 V, ∆f = ±50 kHz, 21 kHz Bandwidth − −60 −55 dBc Adjacent Channel Power Leakage 2 Padj2 Pout = +10 dBm, VAGC = 2.5 V, ∆f = ±100 kHz, 21 kHz Bandwidth − −70 −65 dBc Gain Control Range GCR Pin = −15 dBm, VAGC = 0.5 to 2.5 V 37 42 − dB Gain Control Current IAGC VAGC = 0.5 to 2.5 V − 1 20 µA Data Sheet PG10194EJ01V0DS 3 µPG2134TB EVALUATION CIRCUIT f = 1 441 MHz, VDD1 = 3.0 V, VDD2 = 3.5 V OUTPUT 3 pF 1 nH 10 000 pF 1 kΩ 3 VDD2 4 VAGC 1 000 pF 2 pF 2 5 2.2 nH 8.2 nH 1 VDD1 6 INPUT 100 pF 1 000 pF 6.8 nH The application circuits and their parameters are for reference only and are not intended for use in actual design-ins. 4 Data Sheet PG10194EJ01V0DS µPG2134TB ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD C6 Vdd2 C3 Vdd1 C 2 C1 L1 L2 C 5 OUT IN C4 L4 L3 Vagc R1 AGC AMP USING THE NEC EVALUATION BOARD Symbol Values Part Number Maker 1 000 pF GRM39CH102J25PB muRata C2 3 pF GRM39CH030C50PB muRata C4 2 pF GRM39CH020C50PB muRata C5 100 pF GRM39CH101J50PB muRata C6 10 000 pF GRM39CH103J25PB muRata L1 2.2 nH TFL0816-2N7 Susumu L2 1.0 nH TFL0816-1N0 Susumu L3 6.8 nH TFL0816-6N8 Susumu L4 8.2 nH TFL0816-8N2 Susumu R1 1 kΩ RR0816P-102-D Susumu C1, C3 Data Sheet PG10194EJ01V0DS 5 µPG2134TB OUTPUT POWER, CIRCUIT CURRENT, ADJACENT CHANNEL POWER LEAKAGE vs. INPUT POWER +15 +10 0 –10 –20 +20 +15 –30 Pout +10 –40 Padj1 +5 –50 0 –60 –25 –20 –15 –10 –5 0 –70 Output Power Pout (dBm) f = 1 441 MHz, +35 VDD1 = 3.0 V, VDD2 = 3.5 V, VAGC = 2.5 V +30 IDD +25 –5 –30 OUTPUT POWER vs. GAIN CONTROL VOLTAGE +20 +40 Adjacent Channel Power Leakage 1 Padj1@ ∆ f = ±50 kHz (dBc) Output Power Pout (dBm), Circuit Current IDD (mA) TYPICAL CHARACTERISTICS (TA = +25°°C, unless otherwise specified) f = 1 441 MHz, +10 VDD1 = 3.0 V, VDD2 = 3.5 V, Pin = –15 dBm +5 0 –5 –10 –15 –20 –25 –30 –35 0 Input Power Pin (dBm) 1.0 1.5 2.0 2.5 Gain Control Voltage VAGC (V) Remark The graphs indicate nominal characteristics. 6 0.5 Data Sheet PG10194EJ01V0DS 3.0 µPG2134TB PACKAGE DIMENSIONS 6-PIN SUPER MINIMOLD (UNIT: mm) 2.1±0.1 0.2+0.1 –0.05 0.65 0.65 1.3 Data Sheet PG10194EJ01V0DS 0.15+0.1 –0.05 0 to 0.1 0.7 0.1 MIN. 0.9±0.1 2.0±0.2 1.25±0.1 7 µPG2134TB RECOMMENDED SOLDERING CONDITIONS This product should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your nearby sales office. Soldering Method Soldering Conditions Condition Symbol Infrared Reflow Peak temperature (package surface temperature) Time at peak temperature Time at temperature of 220°C or higher Preheating time at 120 to 180°C Maximum number of reflow processes Maximum chlorine content of rosin flux (% mass) : 260°C or below : 10 seconds or less : 60 seconds or less : 120±30 seconds : 3 times : 0.2%(Wt.) or below IR260 VPS Peak temperature (package surface temperature) Time at temperature of 200°C or higher Preheating time at 120 to 150°C Maximum number of reflow processes Maximum chlorine content of rosin flux (% mass) : 215°C or below : 25 to 40 seconds : 30 to 60 seconds : 3 times : 0.2%(Wt.) or below VP215 Wave Soldering Peak temperature (molten solder temperature) Time at peak temperature Preheating temperature (package surface temperature) Maximum number of flow processes Maximum chlorine content of rosin flux (% mass) : 260°C or below : 10 seconds or less : 120°C or below : 1 time : 0.2%(Wt.) or below WS260 Partial Heating Peak temperature (pin temperature) Soldering time (per side of device) Maximum chlorine content of rosin flux (% mass) : 350°C or below : 3 seconds or less : 0.2%(Wt.) or below HS350 Caution Do not use different soldering methods together (except for partial heating). 8 Data Sheet PG10194EJ01V0DS µPG2134TB • The information in this document is current as of October 2002. 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