NEC UPG2214TK

DATA SHEET
GaAs INTEGRATED CIRCUIT
µPG2214TK
L, S-BAND SPDT SWITCH
DESCRIPTION
The µPG2214TK is a GaAs MMIC for L, S-band SPDT (Single Pole Double Throw) switch which was developed for
mobile phone and another L, S-band application.
This device can operate 2 control switching by control voltage 1.8 to 5.3 V. This device can operate frequency from
0.05 to 3.0 GHz, having the low insertion loss and high isolation.
This device is housed in a 6-pin lead-less minimold (1511) package. And this package is able to high-density
surface mounting.
FEATURES
• Switch control voltage
•
•
•
•
: Vcont (H) = 1.8 to 5.3 V (3.0 V TYP.)
: Vcont (L) = −0.2 to +0.2 V (0 V TYP.)
Low insertion loss
: Lins1 = 0.25 dB TYP. @ f = 0.05 to 0.5 GHz, Vcont (H) = 3.0 V, Vcont (L) = 0 V
: Lins2 = 0.25 dB TYP. @ f = 0.5 to 1.0 GHz, Vcont (H) = 3.0 V, Vcont (L) = 0 V
: Lins3 = 0.30 dB TYP. @ f = 1.0 to 2.0 GHz, Vcont (H) = 3.0 V, Vcont (L) = 0 V
: Lins4 = 0.35 dB TYP. @ f = 2.0 to 2.5 GHz, Vcont (H) = 3.0 V, Vcont (L) = 0 V
: Lins5 = 0.35 dB TYP. @ f = 2.5 to 3.0 GHz, Vcont (H) = 3.0 V, Vcont (L) = 0 V
High isolation
: ISL1 = 32 dB TYP. @ f = 0.05 to 0.5 GHz, Vcont (H) = 3.0 V, Vcont (L) = 0 V
: ISL2 = 28 dB TYP. @ f = 0.5 to 1.0 GHz, Vcont (H) = 3.0 V, Vcont (L) = 0 V
: ISL3 = 27 dB TYP. @ f = 1.0 to 2.0 GHz, Vcont (H) = 3.0 V, Vcont (L) = 0 V
: ISL4 = 26 dB TYP. @ f = 2.0 to 2.5 GHz, Vcont (H) = 3.0 V, Vcont (L) = 0 V
: ISL5 = 24 dB TYP. @ f = 2.5 to 3.0 GHz, Vcont (H) = 3.0 V, Vcont (L) = 0 V
Handling power
: Pin (1 dB) = +27.0 dBm TYP. @ f = 0.5 to 3.0 GHz, Vcont (H) = 3.0 V, Vcont (L) = 0 V
: Pin (1 dB) = +20.0 dBm TYP. @ f = 0.5 to 3.0 GHz, Vcont (H) = 1.8 V, Vcont (L) = 0 V
High-density surface mounting : 6-pin lead-less minimold package (1.5 × 1.1 × 0.55 mm)
APPLICATIONS
• L, S-band digital cellular or cordless telephone
TM
• W-LAN, WLL and Bluetooth etc.
ORDERING INFORMATION
Part Number
µPG2214TK-E2
Package
Marking
6-pin lead-less minimold (1511)
G4K
Supplying Form
• Embossed tape 8 mm wide
• Pin 1, 6 face the perforation side of the tape
• Qty 5 kpcs/reel
Remark To order evaluation samples, contact your nearby sales office.
Part number for sample order: µPG2214TK
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PG10475EJ04V0DS (4th edition)
Date Published October 2004 CP(K)
Printed in Japan
The mark  shows major revised points.
 NEC Compound Semiconductor Devices, Ltd. 2004
µPG2214TK
PIN CONNECTIONS AND INTERNAL BLOCK DIAGRAM
(Top View)
2
3
G4K
1
(Top View)
(Bottom View)
6
1
6
6
1
5
2
5
5
2
4
3
4
4
3
Pin No.
Pin Name
1
OUTPUT1
2
GND
3
OUTPUT2
4
Vcont2
5
INPUT
6
Vcont1
TRUTH TABLE
Vcont1
Vcont2
INPUT−OUTPUT1
INPUT−OUTPUT2
Low
High
ON
OFF
High
Low
OFF
ON
ABSOLUTE MAXIMUM RATINGS (TA = +25°C, unless otherwise specified)
Parameter
Switch Control Voltage
Symbol
Ratings
Vcont
+6.0
Unit
Note
V
Input Power
Pin
+30
dBm
Operating Ambient Temperature
TA
−45 to +85
°C
Storage Temperature
Tstg
−55 to +150
°C
Note Vcont1 − Vcont2 ≤ 6.0 V
RECOMMENDED OPERATING RANGE (TA = +25°C, unless otherwise specified)
Parameter
Symbol
MIN.
TYP.
MAX.
Unit
Switch Control Voltage (H)
Vcont (H)
1.8
3.0
5.3
V
Switch Control Voltage (L)
Vcont (L)
−0.2
0
0.2
V
2
Data Sheet PG10475EJ04V0DS
µPG2214TK
ELECTRICAL CHARACTERISTICS
(TA = +25°C, Vcont (H) = 3.0 V, Vcont (L) = 0 V, DC cut capacitors = 100 pF, unless otherwise specified)
Parameter
Symbol
Test Conditions
Note 1
MIN.
TYP.
MAX.
Unit
−
0.25
0.45
dB
Insertion Loss 1
Lins1
f = 0.05 to 0.5 GHz
Insertion Loss 2
Lins2
f = 0.5 to 1.0 GHz
−
0.25
0.45
dB
Insertion Loss 3
Lins3
f = 1.0 to 2.0 GHz
−
0.30
0.50
dB
Insertion Loss 4
Lins4
f = 2.0 to 2.5 GHz
−
0.35
0.55
dB
Insertion Loss 5
Lins5
f = 2.5 to 3.0 GHz
−
0.35
0.60
dB
29
32
−
dB
Note 1
Isolation 1
ISL1
f = 0.05 to 0.5 GHz
Isolation 2
ISL2
f = 0.5 to 1.0 GHz
25
28
−
dB
Isolation 3
ISL3
f = 1.0 to 2.0 GHz
24
27
−
dB
Isolation 4
ISL4
f = 2.0 to 2.5 GHz
23
26
−
dB
Isolation 5
ISL5
f = 2.5 to 3.0 GHz
21
24
−
dB
15
20
−
dB
15
20
−
dB
15
20
−
dB
15
20
−
dB
+21.0
+23.0
−
dBm
f = 0.5 to 3.0 GHz
−
+23.0
−
dBm
f = 0.5 to 3.0 GHz
−
+27.0
−
dBm
f = 2.0 GHz, Pin = +15 dBm
−
−55
−47
dBc
f = 2.5 GHz, Pin = +15 dBm
−
−55
−47
dBc
f = 2.0 GHz, Pin = +15 dBm
−
−55
−47
dBc
f = 2.5 GHz, Pin = +15 dBm
−
−55
−47
dBc
f = 0.5 to 3.0 GHz, 2 tone,
−
+58
−
dBm
−
4
20
µA
−
20
200
ns
Input Return Loss 1
RLin1
f = 0.05 to 0.5 GHz
Input Return Loss 2
RLin2
f = 0.5 to 3.0 GHz
Output Return Loss 1
RLout1
f = 0.05 to 0.5 GHz
Output Return Loss 2
RLout2
f = 0.5 to 3.0 GHz
0.1 dB Loss Compression
Input Power
1 dB Loss Compression
Input Power
Pin (0.1 dB)
Note 2
Pin (1 dB)
Note 1
Note 1
f = 2.0/2.5 GHz
Note 3
2nd Harmonics
3rd Harmonics
Intermodulation Intercept Point
2f0
3f0
IIP3
Pin = +16 dBm, 5 MHz spicing
Switch Control Current
Icont
Switch Control Speed
tSW
50% CTL to 90/10% RF
Notes 1. DC cut capacitors = 1 000 pF at f = 0.05 to 0.5 GHz
2. Pin (0.1 dB) is measured the input power level when the insertion loss increases more 0.1 dB than that of
linear range.
3. Pin (1 dB) is measured the input power level when the insertion loss increases more 1 dB than that of linear
range.
Data Sheet PG10475EJ04V0DS
3
µPG2214TK
ELECTRICAL CHARACTERISTICS
(TA = +25°C, Vcont (H) = 1.8 V, Vcont (L) = 0 V, DC cut capacitors = 100 pF, unless otherwise specified)
Parameter
Symbol
Test Conditions
Note 1
MIN.
TYP.
MAX.
Unit
−
0.25
0.50
dB
Insertion Loss 6
Lins6
f = 0.05 to 0.5 GHz
Insertion Loss 7
Lins7
f = 0.5 to 1.0 GHz
−
0.25
0.50
dB
Insertion Loss 8
Lins8
f = 1.0 to 2.0 GHz
−
0.30
0.55
dB
Insertion Loss 9
Lins9
f = 2.0 to 2.5 GHz
−
0.35
0.60
dB
Insertion Loss 10
Lins10
f = 2.5 to 3.0 GHz
−
0.35
0.65
dB
27
30
−
dB
Note 1
Isolation 6
ISL6
f = 0.05 to 0.5 GHz
Isolation 7
ISL7
f = 0.5 to 2.0 GHz
23
27
−
dB
Isolation 8
ISL8
f = 2.0 to 2.5 GHz
21
25
−
dB
Isolation 9
ISL9
f = 2.5 to 3.0 GHz
20
24
−
dB
Input Return Loss 3
RLin3
f = 0.05 to 3.0 GHz
Note 1
15
20
−
dB
f = 0.05 to 3.0 GHz
Note 1
15
20
−
dB
+14.0
+17.0
−
dBm
f = 0.5 to 3.0 GHz
−
+17.0
−
dBm
f = 0.5 to 3.0 GHz
−
+20.0
−
dBm
−
4
20
µA
−
20
200
ns
Output Return Loss 3
0.1 dB Loss Compression
Input Power
Pin (0.1 dB)
f = 2.0/2.5 GHz
Note 2
1 dB Loss Compression
Input Power
RLout3
Pin (1 dB)
Note 3
Switch Control Current
Icont
Switch Control Speed
tSW
50% CTL to 90/10% RF
Notes 1. DC cut capacitors = 1 000 pF at f = 0.05 to 0.5 GHz
2. Pin (0.1 dB) is measured the input power level when the insertion loss increases more 0.1 dB than that of
linear range.
3. Pin (1 dB) is measured the input power level when the insertion loss increases more 1 dB than that of linear
range.
Caution This device is used it is necessary to use DC cut capacitors.
The value of DC cut capacitors should be chosen to accommodate the frequency of operation,
bandwidth, switching speed and the condition with actual board of your system. The range of
recommended DC cut capacitor value is less than 100 pF.
4
Data Sheet PG10475EJ04V0DS
µPG2214TK
EVALUATION CIRCUIT
Vcont1
INPUT
Vcont2
C0 Note
1 000 pF
1 000 pF
6
1
C0
OUTPUT1
5
2
4
3
C0
OUTPUT2
Note C0 : 0.05 to 0.5 GHz 1 000 pF
: 0.5 to 3.0 GHz 100 pF
The application circuits and their parameters are for reference only and are not intended for use in actual design-ins.
Data Sheet PG10475EJ04V0DS
5
µPG2214TK
ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD
Vcont2
6pin L2MM SPDT SW
Vc1
OUTPUT2
C2
C
2
C
4
OUT 1
INPUT
G4K
C1
C3
C1
C1
IN
C
1
C
5
C2
OUT 2
OUTPUT1
Vc2
Vcont1
USING THE NEC EVALUATION BOARD
Symbol
C1, C2, C3
C4, C5
6
Values
100 pF
1 000 pF
Data Sheet PG10475EJ04V0DS
µPG2214TK
TYPICAL CHARACTERISTICS
(TA = +25°C, Vcont (H) = 3.0 V, Vcont (L) = 0 V, DC cut capacitors = 100 pF, unless otherwise specified)
INPUT-OUTPUT1
INSERTION LOSS vs. FREQUENCY
1: –0.565 dB
1.0 GHz
2: –0.695 dB
1.5 GHz
3: –0.858 dB
2.0 GHz
4: –0.984 dB
2.5 GHz
5: –1.180 dB
3.0 GHz
Insertion Loss Lins (dB)
4
3
2
1
0
1
–1
2
–2
3
4
5
–3
5
3
2
1
0
–4
2.5
3.0
3.5
3
4
5
1.5
2.0
2.5
3.0
–3
–5
0.5
2.0
2
–2
–4
1.5
1
–1
–5
0.5
1.0
1: –0.571 dB
1.0 GHz
2: –0.695 dB
1.5 GHz
3: –0.848 dB
2.0 GHz
4: –0.981 dB
2.5 GHz
5: –1.151 dB
3.0 GHz
4
Insertion Loss Lins (dB)
5
INPUT-OUTPUT2
INSERTION LOSS vs. FREQUENCY
1.0
3.5
Frequency f (GHz)
Frequency f (GHz)
Remark The graphs indicate nominal characteristics.
Caution These characteristics values include the losses of the NEC evaluation board.
Data Sheet PG10475EJ04V0DS
7
µPG2214TK
INPUT-OUTPUT1
ISOLATION vs. FREQUENCY
1: –29.06 dB
1.0 GHz
2: –27.83 dB
1.5 GHz
3: –27.417 dB
2.0 GHz
4: –27.232 dB
2.5 GHz
5: –27.188 dB
3.0 GHz
40
20
10
0
–10
–20
1
–30
–40
–50
0.5
1.0
2
3
4
1.5
2.0
2.5
10
0
–10
–20
1
–30
5
3.0
–50
0.5
3.5
1.0
2
3
4
5
1.5
2.0
2.5
3.0
3.5
Frequency f (GHz)
INPUT-OUTPUT1
INPUT RETURN LOSS vs. FREQUENCY
INPUT-OUTPUT2
INPUT RETURN LOSS vs. FREQUENCY
1: –27.651 dB
1.0 GHz
2: –29.789 dB
1.5 GHz
3: –26.145 dB
2.0 GHz
4: –25.035 dB
2.5 GHz
5: –29.816 dB
3.0 GHz
30
20
10
0
–10
–20
1
–30
2
–40
–50
0.5
1.0
1.5
3
2.0
4
2.5
50
5
3.0
1: –27.881 dB
1.0 GHz
2: –34.329 dB
1.5 GHz
3: –26.93 dB
2.0 GHz
4: –24.21 dB
2.5 GHz
5: –27.508 dB
3.0 GHz
40
Input Return Loss RLin (dB)
Input Return Loss RLin (dB)
20
Frequency f (GHz)
40
Output Return Loss RLout (dB)
30
–40
50
30
20
10
0
–10
–20
1
–30
–40
–50
0.5
3.5
3
4
2.0
2.5
5
2
1.0
1.5
3.0
3.5
Frequency f (GHz)
Frequency f (GHz)
INPUT-OUTPUT1
OUTPUT RETURN LOSS vs. FREQUENCY
INPUT-OUTPUT2
OUTPUT RETURN LOSS vs. FREQUENCY
50
50
1: –28.217 dB
1.0 GHz
2: –31.956 dB
1.5 GHz
3: –26.809 dB
2.0 GHz
4: –24.553 dB
2.5 GHz
5: –27.835 dB
3.0 GHz
40
30
20
10
0
–10
–20
1
–30
3
4
2
–40
–50
0.5
1.0
1.5
2.0
2.5
5
3.0
3.5
1: –26.027 dB
1.0 GHz
2: –28.172 dB
1.5 GHz
3: –24.749 dB
2.0 GHz
4: –23.224 dB
2.5 GHz
5: –26.391 dB
3.0 GHz
40
30
20
10
0
–10
–20
1
–30
2
–40
–50
0.5
Frequency f (GHz)
1.0
1.5
3
4
5
2.0
2.5
3.0
Frequency f (GHz)
Remark The graphs indicate nominal characteristics.
8
1: –29.042 dB
1.0 GHz
2: –27.82 dB
1.5 GHz
3: –27.49 dB
2.0 GHz
4: –27.314 dB
2.5 GHz
5: –27.263 dB
3.0 GHz
40
Output Return Loss RLout (dB)
Isolation ISL (dB)
30
50
Isolation ISL (dB)
50
INPUT-OUTPUT2
ISOLATION vs. FREQUENCY
Data Sheet PG10475EJ04V0DS
3.5
µPG2214TK
OUTPUT POWER vs. INPUT POWER
30
Output Power Pout (dBm)
f = 2 GHz
25
20
15
10
5
10 12
14
16
18 20
22 24
26 28
30
Input Power Pin (dBm)
Remark The graph indicate nominal characteristics.
Data Sheet PG10475EJ04V0DS
9
µPG2214TK
PACKAGE DIMENSIONS
6-PIN LEAD-LESS MINIMOLD (1511) (UNIT: mm)
(Bottom View)
0.16±0.05
0.48±0.05 0.48±0.05
1.5±0.1
(Top View)
1.1±0.1
0.2±0.1
10
0.11+0.1
–0.05
0.55±0.03
1.3±0.05
Data Sheet PG10475EJ04V0DS
0.9±0.1
µPG2214TK
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered and mounted under the following recommended conditions.
For soldering
methods and conditions other than those recommended below, contact your nearby sales office.
Soldering Method
Infrared Reflow
VPS
Wave Soldering
Soldering Conditions
Condition Symbol
Peak temperature (package surface temperature)
: 260°C or below
Time at peak temperature
: 10 seconds or less
Time at temperature of 220°C or higher
: 60 seconds or less
Preheating time at 120 to 180°C
: 120±30 seconds
Maximum number of reflow processes
: 3 times
Maximum chlorine content of rosin flux (% mass)
: 0.2%(Wt.) or below
Peak temperature (package surface temperature)
: 215°C or below
Time at temperature of 200°C or higher
: 25 to 40 seconds
Preheating time at 120 to 150°C
: 30 to 60 seconds
Maximum number of reflow processes
: 3 times
Maximum chlorine content of rosin flux (% mass)
: 0.2%(Wt.) or below
Peak temperature (molten solder temperature)
: 260°C or below
Time at peak temperature
: 10 seconds or less
IR260
VP215
WS260
Preheating temperature (package surface temperature) : 120°C or below
Partial Heating
Maximum number of flow processes
: 1 time
Maximum chlorine content of rosin flux (% mass)
: 0.2%(Wt.) or below
Peak temperature (pin temperature)
: 350°C or below
Soldering time (per side of device)
: 3 seconds or less
Maximum chlorine content of rosin flux (% mass)
: 0.2%(Wt.) or below
HS350
Caution Do not use different soldering methods together (except for partial heating).
Data Sheet PG10475EJ04V0DS
11
µPG2214TK
Bluetooth is a trademark owned by Bluetooth SIG, Inc., U.S.A.
• The information in this document is current as of October, 2004. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or
data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all
products and/or types are available in every country. Please check with an NEC sales representative
for availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
• NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.
• Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of customer's equipment shall be done under the full
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
parties arising from the use of these circuits, software and information.
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agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
risks of damage to property or injury (including death) to persons arising from defects in NEC
semiconductor products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment, and anti-failure features.
• NEC semiconductor products are classified into the following three quality grades:
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products
developed based on a customer-designated "quality assurance program" for a specific application. The
recommended applications of a semiconductor product depend on its quality grade, as indicated below.
Customers must check the quality grade of each semiconductor product before using it in a particular
application.
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and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots
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systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not
intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness
to support a given application.
(Note)
(1) "NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd.
and also includes its majority-owned subsidiaries.
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
NEC (as defined above).
M8E 00. 4 - 0110
12
Data Sheet PG10475EJ04V0DS
µPG2214TK
Caution
GaAs Products
This product uses gallium arsenide (GaAs).
GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe
the following points.
• Follow related laws and ordinances when disposing of the product. If there are no applicable laws
and/or ordinances, dispose of the product as recommended below.
1. Commission a disposal company able to (with a license to) collect, transport and dispose of
materials that contain arsenic and other such industrial waste materials.
2. Exclude the product from general industrial waste and household garbage, and ensure that the
product is controlled (as industrial waste subject to special control) up until final disposal.
• Do not burn, destroy, cut, crush, or chemically dissolve the product.
• Do not lick the product or in any way allow it to enter the mouth.
For further information, please contact
NEC Compound Semiconductor Devices, Ltd.
http://www.ncsd.necel.com/
E-mail: [email protected] (sales and general)
[email protected] (technical)
Sales Division TEL: +81-44-435-1588 FAX: +81-44-435-1579
NEC Compound Semiconductor Devices Hong Kong Limited
E-mail: [email protected] (sales, technical and general)
FAX: +852-3107-7309
TEL: +852-3107-7303
Hong Kong Head Office
TEL: +886-2-8712-0478 FAX: +886-2-2545-3859
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FAX: +82-2-558-5209
TEL: +82-2-558-2120
Korea Branch Office
NEC Electronics (Europe) GmbH
http://www.ee.nec.de/
TEL: +49-211-6503-0 FAX: +49-211-6503-1327
California Eastern Laboratories, Inc.
http://www.cel.com/
TEL: +1-408-988-3500 FAX: +1-408-988-0279
0406