RENESAS UPG2413T6Z

PreliminaryData Sheet
μPG2413T6Z
GaAs Integrated Circuit
SP3T Switch for BluetoothTM and 802.11b/g
R09DS0001EJ0100
Rev.1.00
May 20, 2010
DESCRIPTION
The μPG2413T6Z is a GaAs MMIC SP3T switch which was developed for Bluetooth, wireless LAN.
This device can operate at frequencies from 0.5 to 3.0 GHz, with low insertion loss.
This device is housed in a 8-pin plastic TSON (Thin Small Out-line Flat Non-leaded) package and is suitable for highdensity surface mounting.
FEATURES
• Switch Control voltage
• Low insertion loss
: Vcont (H) = 3.0 V TYP., Vcont (L) = 0 V TYP.
: Lins = 0.35 dB TYP. @ f = 1.0 GHz
: Lins = 0.45 dB TYP. @ f = 2.0 GHz
: Lins = 0.50 dB TYP. @ f = 2.5 GHz
• High isolation
: ISL = 26 dB TYP. @ f = 1.0 GHz
: ISL = 20 dB TYP. @ f = 2.0 GHz
: ISL = 18 dB TYP. @ f = 2.5 GHz
• Handling power
: Pin (0.1 dB) = +28.0 dBm TYP. @ f = 2.5 GHz, V cont (H) = 3.0 V, Vcont (L) = 0 V
• High-density surface mounting : 8-pin plastic TSON package (1.5 × 1.5 × 0.37 mm)
APPLICATIONS
• Bluetooth and IEEE802.11b/g etc.
ORDERING INFORMATION
Part Number
μPG2413T6Z-E2
Order Number
μPG2413T6Z-E2-A
Package
8-pin plastic
TSON
(Pb-Free)
Marking
G6F
Supplying Form
• Embossed tape 8 mm wide
• Pin 1, 8 face the perforation side of the tape
• Qty 3 kpcs/reel
Remark To order evaluation samples, please contact your nearby sales office.
Part number for sample order: μPG2413T6Z
CAUTION
Although this device is designed to be as robust as possible, ESD (Electrostatic Discharge) can damage this
device. This device must be protected at all times from ESD. Static charges may easily produce potentials of
several kilovolts on the human body or equipment, which can discharge without detection. Industry-standard
ESD precautions must be employed at all times.
R09DS0001EJ0100 Rev.1.00
May 20, 2010
Page 1 of 11
μPG2413T6Z
PIN CONNECTIONS AND INTERNAL BLOCK DIAGRAM
(Top View)
(Top View)
1
G6F
2
3
4
(Bottom View)
8
RFC
1
RF3
8
8
1
7
GND
2
Vcont3
7
7
2
6
Vcont1
3
Vcont2
6
6
3
5
RF1
4
RF2
5
5
4
Pin No.
Pin Name
1
2
3
4
5
6
7
8
RFC
GND
Vcont1
RF1
RF2
Vcont2
Vcont3
RF3
Remark Exposed pad : GND
TRUTH TABLE
Vcont1
High
Low
Low
Vcont2
Low
High
Low
Vcont3
Low
Low
High
RFC−RF1
ON
OFF
OFF
RFC−RF2
OFF
ON
OFF
RFC−RF3
OFF
OFF
ON
ABSOLUTE MAXIMUM RATINGS (TA = +25°C, unless otherwise specified)
Parameter
Switch Control Voltage
Input Power (Vcont (H) = 1.8 V)
Input Power (Vcont (H) = 2.3 V)
Input Power (Vcont (H) = 3.0 V)
Input Power (Vcont (H) = 3.6 V)
Operating Ambient Temperature
Storage Temperature
Note:
Symbol
Vcont
Pin
Pin
Pin
Pin
TA
Tstg
Ratings
Note
+6.0
+26
+28
+32
+34
−45 to +85
−55 to +150
Unit
V
dBm
dBm
dBm
dBm
°C
°C
⎪Vcont (H) − Vcont (L)⎪ ≤ 6.0 V
RECOMMENDED OPERATING RANGE (TA = +25°C)
Parameter
Operating Frequency
Switch Control Voltage (H)
Switch Control Voltage (L)
Control Voltage Difference (H)
Symbol
f
Vcont (H)
Vcont (L)
MIN.
0.5
1.8
−0.2
TYP.
−
3.0
0
MAX.
3.0
3.6
0.2
Unit
GHz
V
V
ΔVcont (H)
−0.1
0
0.1
V
ΔVcont (L)
−0.1
0
0.1
V
Note1
Control Voltage Difference (L)
Note2
Notes: 1. ΔVcont (H) is a difference between the maximum and the minimum control voltages among Vcont1 (H), Vcont2 (H)
and Vcont3 (H).
2. ΔVcont (L) is a difference between the maximum and the minimum control voltages among Vcont1 (L), Vcont2 (L)
and Vcont3 (L).
R09DS0001EJ0100 Rev.1.00
May 20, 2010
Page 2 of 11
μPG2413T6Z
ELECTRICAL CHARACTERISTICS 1
(TA = +25°C, Vcont (H) = 3.0 V, Vcont (L) = 0 V, ZO = 50 Ω, DC blocking capacitors = 56 pF,
unless otherwise specified)
Parameter
Insertion Loss
Isolation
Return Loss (RFC)
Return Loss (RF1, 2, 3)
0.1 dB Loss Compression
Note 1
Input Power
1 dB Loss Compression
Note 2
Input Power
Symbol
Lins
Pass
Test Conditions
RFC to RF1, 2, 3 f = 0.5 to 1.0 GHz
f = 1.0 to 2.0 GHz
f = 2.0 to 2.5 GHz
f = 2.5 to 3.0 GHz
ISL
RFC to RF1, 2, 3 f = 0.5 to 1.0 GHz
(OFF)
f = 1.0 to 2.0 GHz
f = 2.0 to 2.5 GHz
f = 2.5 to 3.0 GHz
RLC
f = 0.5 to 3.0 GHz
RL1, 2, 3
f = 0.5 to 3.0 GHz
Pin (0.1 dB) RFC to RF1, 2, 3 f = 2.5 GHz
Pin (1 dB)
MIN.
−
−
−
−
23
17
15
−
15
15
+25.0
TYP.
0.35
0.45
0.50
0.60
26
20
18
16
20
20
+28.0
MAX.
0.60
0.70
0.75
−
−
−
−
−
−
−
−
Unit
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dBm
RFC to RF1, 2, 3 f = 2.5 GHz,
Vcont (H) = 2.3 V
−
+27.0
−
dBm
f = 2.5 GHz,
Vcont (H) = 3.0 V
−
+31.0
−
dBm
f = 2.5 GHz,
Vcont (H) = 3.6 V
−
+33.0
−
dBm
2nd Harmonics
2f0
f = 2.5 GHz,
Pin = 23 dBm
−
75
−
dBc
3rd Harmonics
3f0
−
75
−
dBc
Switch Control Current
Switch Control Speed
Icont
tSW
f = 2.5 GHz,
Pin = 23 dBm
No RF input
−
0.1
5.0
μA
−
50
−
ns
50% CTL to
90/10% RF
Notes: 1. Pin (0.1 dB) is the measured input power level when the insertion loss increases 0.1 dB more than that of the
linear range.
2. Pin (1 dB) is the measured input power level when the insertion loss increases 1 dB more than that of the linear
range.
CAUTION
It is necessary to use DC blocking capacitors with this device.
R09DS0001EJ0100 Rev.1.00
May 20, 2010
Page 3 of 11
μPG2413T6Z
ELECTRICAL CHARACTERISTICS 2
(TA = +25°C, Vcont (H) = 1.8 V, Vcont (L) = 0 V, ZO = 50 Ω, DC blocking capacitors = 56 pF,
unless otherwise specified)
Parameter
Insertion Loss
Isolation
Return Loss (RFC)
Return Loss (RF1, 2, 3)
0.1 dB Loss Compression
Note 1
Input Power
1 dB Loss Compression
Note 2
Input Power
2nd Harmonics
Symbol
Lins
Pass
Test Conditions
RFC to RF1, 2, 3 f = 0.5 to 1.0 GHz
f = 1.0 to 2.0 GHz
f = 2.0 to 2.5 GHz
f = 2.5 to 3.0 GHz
ISL
RFC to RF1, 2, 3 f = 0.5 to 1.0 GHz
(OFF)
f = 1.0 to 2.0 GHz
f = 2.0 to 2.5 GHz
f = 2.5 to 3.0 GHz
RLC
f = 0.5 to 3.0 GHz
RL1, 2, 3
f = 0.5 to 3.0 GHz
Pin (0.1 dB) RFC to RF1, 2, 3 f = 2.5 GHz
MIN.
−
−
−
−
22.5
16.5
14.5
−
15
15
+19.0
TYP.
0.35
0.45
0.50
0.65
25.5
19.5
17.5
15.5
20
20
+22.0
MAX.
0.65
0.75
0.80
−
−
−
−
−
−
−
−
Unit
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dBm
Pin (1 dB)
+21.0
+25.0
−
dBm
RFC to RF1, 2, 3 f = 2.5 GHz
2f0
f = 2.5 GHz,
Pin = 17 dBm
−
75
−
dBc
3rd Harmonics
3f0
−
75
−
dBc
Switch Control Current
Switch Control Speed
Icont
tSW
f = 2.5 GHz,
Pin = 17 dBm
No RF input
−
0.1
5.0
μA
−
50
−
ns
50% CTL to
90/10% RF
Notes: 1. Pin (0.1 dB) is the measured input power level when the insertion loss increases 0.1 dB more than that of the
linear range.
2. Pin (1 dB) is the measured input power level when the insertion loss increases 1 dB more than that of the linear
range.
CAUTION
It is necessary to use DC blocking capacitors with this device.
R09DS0001EJ0100 Rev.1.00
May 20, 2010
Page 4 of 11
μPG2413T6Z
EVALUATION CIRCUIT
56 pF
RFC
8
1
RF3
56 pF
2
7
Vcont3
1 000 pF
3
Vcont1
Vcont2
6
1 000 pF
1 000 pF
4
RF1
5
RF2
56 pF
56 pF
The application circuits and their parameters are for reference only and are not intended for use in actual design-ins.
APPLICATION INFORMATION
CB
Switch
LESD
CB
CB
• CB are DC blocking capacitors external to the device.
A value of 56 pF is sufficient for operation from 500 MHz to 2.5 GHz bands.
The value may be tailored to provide specific electrical responses.
• The RF ground connections should be kept as short as possible and connected to directly to a good RF ground for
best performance.
• LESD provides a means to increase the ESD protection on a specific RF port, typically the port attached to the
antenna.
R09DS0001EJ0100 Rev.1.00
May 20, 2010
Page 5 of 11
μPG2413T6Z
TYPICAL CHARACTERISTICS
(TA = +25°C, DC blocking capacitors = 56 pF, unless otherwise specified)
RFC-RF1/RF2/RF3
ISOLATION vs. FREQUENCY
RFC-RF1/RF2/RF3
INSERTION LOSS vs. FREQUENCY
0
–0.1
–5
Isolation ISL (dB)
Insertion Loss Lins (dB)
–0.2
–0.3
Vcont (H) = 3.0 V
–0.4
–0.5
–0.7
0.0
1.8 V
–20
–25
3.0 V
0.5
1.0
–35
2.0
1.5
2.5
–40
0.0
3.0
0.5
1.0
2.5
2.0
1.5
3.0
Frequency f (GHz)
Frequency f (GHz)
RETURN LOSS (RFC) vs. FREQUENCY
RETURN LOSS (RF1, 2, 3) vs. FREQUENCY
Return Loss (RF1, 2, 3) RL1, 2, 3 (dB)
0
–5
Return Loss (RFC) RLC (dB)
Vcont (H) = 1.8 V
–15
–30
–0.6
–10
–15
–20
Vcont (H) = 3.0 V
–25
–30
–35
–40
1.8 V
–45
–50
0.0
0.5
1.0
2.0
1.5
2.5
3.0
0
–5
–10
–15
–20
Vcont (H) = 3.0 V
–25
–30
–35
–40
–45
–50
0.0
1.8 V
0.5
1.0
2.0
1.5
2.5
Frequency f (GHz)
Frequency f (GHz)
RFC-RF1/RF2/RF3 INSERTION LOSS
vs. SWITCH CONTROL VOLTAGE (H)
RFC-RF1/RF2/RF3 ISOLATION vs.
SWITCH CONTROL VOLTAGE (H)
–0.1
–5
Isolation ISL (dB)
–0.3
f = 1.0 GHz
–0.4
–0.5
–10
–15
f = 2.5 GHz
–20
–25
1.0 GHz
–30
–0.6
–0.7
1.5
3.0
0
–0.2
Insertion Loss Lins (dB)
–10
2.5 GHz
2.0
2.5
3.0
–35
3.5
4.0
Switch Control Voltage (H) Vcont (H) (V)
–40
1.5
2.0
2.5
3.0
3.5
4.0
Switch Control Voltage (H) Vcont (H) (V)
Remark The graphs indicate nominal characteristics.
R09DS0001EJ0100 Rev.1.00
May 20, 2010
Page 6 of 11
μPG2413T6Z
RETURN LOSS (RF1, 2, 3)
vs. SWITCH CONTROL VOLTAGE (H)
RETURN LOSS (RFC)
vs. SWITCH CONTROL VOLTAGE (H)
Return Loss (RF1, 2, 3) RL1, 2, 3 (dB)
–5
–10
–15
–20
–25
f = 1.0 GHz
–30
2.5 GHz
–35
–40
1.5
2.0
2.5
3.5
3.0
4.0
–5
–10
–15
–20
f = 2.5 GHz
–25
–30
1.0 GHz
–35
–40
1.5
2.0
2.5
3.0
3.5
4.0
RFC-RF1/RF2/RF3 INSERTION LOSS,
Icont vs. INPUT POWER
RFC-RF1/RF2/RF3 Pin (1 dB), Pin (0.1 dB) vs.
SWITCH CONTROL VOLTAGE (H)
18
f = 2.5 GHz
–0.5
Vcont (H) = 3.0 V
Lins
–1.0
15
12
1.8 V
–1.5
9
–2.0
6
3.0 V
–2.5
3
Icont
–3.0
10
15
1.8 V
20
25
30
0
35
Input Power Pin (dBm)
1 dB Loss Compression Input Power Pin (1 dB) (dBm)
0.1 dB Loss Compression Input Power Pin (0.1 dB) (dBm)
Switch Control Voltage (H) Vcont (H) (V)
0
Insertion Loss Lins (dB)
0
Switch Control Voltage (H) Vcont (H) (V)
Switch Control Current Icont (μA)
Return Loss (RFC) RLC (dB)
0
34
f = 2.5 GHz
32
30
Pin (1 dB)
28
26
Pin (0.1 dB)
24
22
20
1.5
2.0
2.5
3.0
3.5
4.0
Switch Control Voltage (H) Vcont (H) (V)
Remark The graphs indicate nominal characteristics.
R09DS0001EJ0100 Rev.1.00
May 20, 2010
Page 7 of 11
μPG2413T6Z
MOUNTING PAD LAYOUT DIMENSIONS
8-PIN PLASTIC TSON (UNIT: mm)
1.2
0.7
1.1
1.7
0.4
8-0.15
Remark The mounting pad layout in this document is for reference only.
When designing PCB, please consider workability of mounting, solder joint reliability, prevention of solder
bridge and so on, in order to optimize the design.
R09DS0001EJ0100 Rev.1.00
May 20, 2010
Page 8 of 11
μPG2413T6Z
PACKAGE DIMENSIONS
8-PIN PLASTIC TSON (UNIT: mm)
(Top View)
(Bottom View)
(Side View)
0.3±0.07
1.5±0.1
(C0.15)
0.37+0.03
–0.05
A
0.08 MIN.
0.15+0.07
–0.05
A
1.5±0.1
1.2±0.1
0.4±0.06
(0.24)
0.7±0.1
0.2±0.1
Remark A > 0
( ): Reference value
R09DS0001EJ0100 Rev.1.00
May 20, 2010
Page 9 of 11
μPG2413T6Z
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered and mounted under the following recommended conditions. For soldering methods and
conditions other than those recommended below, contact your nearby sales office.
Soldering Method
Infrared Reflow
Partial Heating
Soldering Conditions
Peak temperature (package surface temperature)
Time at peak temperature
Time at temperature of 220°C or higher
Preheating time at 120 to 180°C
Maximum number of reflow processes
Maximum chlorine content of rosin flux (% mass)
: 260°C or below
: 10 seconds or less
: 60 seconds or less
: 120±30 seconds
: 3 times
: 0.2%(Wt.) or below
Peak temperature (terminal temperature)
: 350°C or below
Soldering time (per side of device)
: 3 seconds or less
Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below
Condition Symbol
IR260
HS350
CAUTION
Do not use different soldering methods together (except for partial heating).
R09DS0001EJ0100 Rev.1.00
May 20, 2010
Page 10 of 11
μPG2413T6Z
Caution
GaAs Products
This product uses gallium arsenide (GaAs).
GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe
the following points.
• Follow related laws and ordinances when disposing of the product. If there are no applicable laws
and/or ordinances, dispose of the product as recommended below.
1. Commission a disposal company able to (with a license to) collect, transport and dispose of
materials that contain arsenic and other such industrial waste materials.
2. Exclude the product from general industrial waste and household garbage, and ensure that the
product is controlled (as industrial waste subject to special control) up until final disposal.
• Do not burn, destroy, cut, crush, or chemically dissolve the product.
• Do not lick the product or in any way allow it to enter the mouth.
R09DS0001EJ0100 Rev.1.00
May 20, 2010
Page 11 of 11
μPG2413T6Z Data Sheet
Revision History
Rev.
1.00
Date
May 20, 2010
Description
Summary
Page
−
First edition issued
Bluetooth is a trademark owned by Bluetooth SIG, Inc., U.S.A.
All trademarks and registered trademarks are the property of their respective owners.
C-1
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Tel: +65-6213-0200, Fax: +65-6278-8001
Renesas Electronics Malaysia Sdn.Bhd.
Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No. 18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia
Tel: +60-3-7955-9390, Fax: +60-3-7955-9510
Renesas Electronics Korea Co., Ltd.
11F., Samik Lavied' or Bldg., 720-2 Yeoksam-Dong, Kangnam-Ku, Seoul 135-080, Korea
Tel: +82-2-558-3737, Fax: +82-2-558-5141
© 2010 Renesas Electronics Corporation. All rights reserved.
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