ETC 3SK230-U1B

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
3SK230
RF AMP. FOR VHF/CATV TUNER
N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR
4 PINS MINI MOLD
FEATURES
PACKAGE DIMENSIONS
(Unit: mm)
The Characteristic of Cross-Modulation is good.
CM = 108 dBm (TYP.) @f = 470 MHz, GR = -30 dB
+0.2
Small Package: 4 Pins Mini Mold Package. (SC-61)
(1.9)
Automatically Mounting: Embossed Type Taping
·
0.95
Suitable for use as RF amplifier in CATV tuner.
·
0.6 +0.1
–0.05
1
(1.8)
·
2
GPS = 19.5 dB TYP. (@ = 470 MHz)
+0.2
1.5 –0.1
0.85
Enhancement Typ.
2.9±0.2
High Power Gain
·
0.4 +0.1
–0.05
NF2 = 0.9 dB TYP. (@ = 55 MHz)
·
2.8 –0.3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
V
V
1
Gate1 to Source Voltage
VG1S
±8(±10)*
Gate2 to Source Voltage
VG2S
±8(±10)*
V
Gate1 to Drain Voltage
VG1D
18
V
Gate2 to Drain Voltage
VG2D
18
V
Drain Current
ID
25
mA
Total Power Dissipation
PD
200
mW
Channel Temperature
Tch
125
Storage Temperature
Tstg
-55 to +125
°C
°C
RL ³ 10 kW
5°
0.16+0.1
–0.06
1
0 to 0.1
18
5°
0.8
VDSX
1.1 +0.2
–3.1
Drain to Source Voltage
5°
0.4 +0.1
–0.05
NF1 = 2.2 dB TYP. (@ = 470 MHz)
3
Low Noise Figure
0.4 +0.1
–0.05
·
4
·
5°
PIN CONNECTIONS
1. Source
2. Drain
3. Gate 2
4. Gate 1
PRECAUTION: Avoid high static voltages or electric fields so that this device would not suffer from any damage due
to those voltages or fields.
Document No. P10587EJ3V0DS00 (3rd edition)
Date Published November 1996 N
Printed in Japan
©
1993
3SK230
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTIC
SYMBOL
MIN.
BVDSX
18
IDSX
0.01
8.0
mA
Gate1 to Source Cutoff Voltage
VG1S(off)
0
+1.0
V
VDS = 6 V, VG2S = 3 V, ID = 10 mA
Gate2 to Source Cutoff Voltage
VG2S(off)
+0.6
+1.6
V
VDS = 6 V, VG1S = 3 V, ID = 10 mA
Drain to Source Breakdown
Voltage
Drain Current
MAX.
UNIT
V
+1.1
TEST CONDITIONS
VG1S = VG2S = -2 V, ID = 10 mA
VDS = 6 V, VG2S = 4.5 V, VG1S = 0.75 V
Gate1 Reverse Current
IG1SS
±20
nA
VDS = VG2S = 0, VG1S = ±8 V
Gate2 Reverse Current
IG2SS
±20
nA
VDS = VG1S = 0, VG2S = ±8 V
Forward Transfer Admittance
| yfs |
16
20
24
mS
VDS = 6 V, VG2S = 4.5 V, ID = 10 mA
f = 1 kHz
Input Capacitance
Ciss
2.3
2.8
3.3
pF
Output Capacitance
Coss
0.9
1.2
1.5
pF
Reverse Transfer Capacitance
Crss
0.015
0.03
pF
Power Gain
Gps
19.5
22.5
dB
Noise Figure 1
NF1
2.2
3.2
dB
Noise Figure 2
NF2
0.9
2.4
dB
IDSX Classification
2
TYP.
Rank
U1A
U1B
Marking
U1A
U1B
IDSX (mA)
0.01 to 3.0
1.0 to 8.0
16.5
VDS = 6 V, VG2S = 4.5 V, ID = 10 mA
f = 1 MHz
VDS = 6 V, VG2S = 4.5 V, ID = 10 mA
f = 470 MHz
VDS = 6 V, VG2S = 4.5 V, ID = 10 mA
f = 55 MHz
3SK230
CHARACTERISTIC CURVE (TA = 25 °C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
50 VG2S = 4.5 V
ID - Drain Current - mA
PT - Total Power Dissipation - mW
Free Air
400
300
200
40
30
VG1S = 3 V
2.5 V
2.0 V
20
1.5 V
10
0
1.0 V
0.5 V
10
5
100
VDS - Drain to Source Voltage - V
0
25
50
75
100
125
DRAIN CURRENT vs.
GATE1 TO SOURCE VOLTAGE
VDS = 6 V
VG2S
20
V
3.0 V
15
2.5 V
10
2.0 V
5
1.5 V
0
–1
|yfs| - Forward Transfer Admittance - mS
= 3.5
40
0
1
2
3
4
VDS = 6 V
f = 1 kHz
25
VG2S = 5 V
20
15
4V
10
3V
5
2V
0
–1
0
1
2
3
VGIS - Gate1 to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
INPUT CAPACITANCE vs.
GATE2 TO SOURCE VOLTAGE
5.0
VDS = 6 V
f = 1 kHz
32
VG2S = 6 V
24
5V
16
4V
8
2V
0
FORWARD TRANSFER ADMITTANCE vs.
GATE1 TO SOURCE VOLTAGE
VGIS - Gate 1 to Source Voltage - V
4
3V
8
12
ID - Drain Current - mA
16
20
Ciss - Input Capacitance - pF
ID - Drain Current - mA
25
|yfs| - Forward Transfer Admittance - mS
TA - Ambient Temperature - °C
4.0
4
ID = 10 mA
(at VDS = 6 V
VG2S = 4.5 V)
f = 1 MHZ
3.0
2.0
1.0
0
1.0
2.0
3.0
4.0
5.0
VG2S - Gate2 to Source Voltage - V
3
3SK230
POWER GAIN AND NOISE FIGURE vs.
GATE2 TO SOURCE VOLTAGE
OUTPUT CAPACITANCE vs.
GATE2 TO SOURCE VOLTAGE
f = 470 MHz
ID = 10 mA
Gps
2.0 (at VDS = 6 V
1.5
1.0
5
GPS - Power Gain - dB
2.0
10
ID = 10 mA
(at VDS = 6 V
VG2S = 4.5 V)
f = 1 MHZ
NF - Noise Figure - dB
Coss - Output Capacitance - pF
2.5
VG2S = 4.5 V)
1.0
0
–1.0
NF
0.5
–2.0
0
1.0
2.0
3.0
4.0
0
5.0
0
1.0
VG2S - Gate2 to Source Voltage - V
2.0
3.0
4.0
5.0
V G2S - Gate2 to Source Voltage - V
S-PARAMETER
VDS = 6 V, VG2S = 4.5 V, ID = 10 mA, (Zo = 50 W)
FREQUENCY
4
S11
S21
S12
S22
MHz
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
100
1.000
-14.7
2.160
160.5
0.008
12.8
0.942
-8.2
200
0.960
-24.5
1.953
148.3
0.003
81.1
0.947
-9.6
300
0.926
-34.3
1.868
135.8
0.005
-146.8
0.906
-16.4
400
0.876
-45.0
1.760
121.2
0.003
-59.5
0.908
-19.4
500
0.853
-54.4
1.691
109.4
0.003
84.3
0.915
-25.1
600
0.842
-63.1
1.608
97.6
0.004
-87.0
0.889
-29.0
3SK230
GPS AND NF TEST CIRCUIT AT f = 470 MHz
VG2S
1 000 pF
22 kΩ
1 000 pF
Ferrite Beads
40 pF OUTPUT
INPUT
L2
40 pF
50 Ω
L1
50 Ω
15 pF
15 pF
1 000 pF
1 000 pF
22 kΩ
L3
1 000 pF
1 000 pF
VDS
VG1S
L1: φ 1.2 mm U.E.W φ 5 mm IT
L2: φ 1.2 mm U.E.W φ 5 mm IT
L3: REC 2.2 µ H
NF TEST CIRCUIT AT f = 55 MHz
VG2S
VDS
RFC
2.2 kΩ
Ferrite
Beads
1 500 pF
1 500 pF
1 000 pF
3.3 kΩ
50 Ω
OUTPUT
27 pF
INPUT
47 kΩ
27 pF
3.3 kΩ
47 kΩ
50 Ω
1 000 pF
VG1S
5
3SK230
[MEMO]
6
3SK230
[MEMO]
7
3SK230
[MEMO]
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consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
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property rights of third parties by or arising from use of a device described herein or any other liability arising
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the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
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measures in its design, such as redundancy, fire-containment, and anti-failure features.
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"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on
a customer designated "quality assurance program" for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
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The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
Anti-radioactive design is not implemented in this product.
M4 96. 5