US3407 P-Ch 30V Fast Switching MOSFETs General Description Product Summery The US3407 is the highest performance trench P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The US3407 meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. BVDSS RDS(ON) ID -30V 78mΩ -4.3A Applications z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA z Networking DC-DC Power System z Load Switch Features z Advanced high cell density Trench technology SOT23 Pin Configuration z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed G z Green Device Available D S Absolute Maximum Ratings Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage VGS Continuous Drain A,F Current TA=25°C TA=70°C Pulsed Drain Current B TA=25°C Power Dissipation A TA=70°C Junction and Storage Temperature Range Maximum -30 Units V ±20 V -4.3 A -3.5 ID IDM -20 1.4 PD W 0.9 TJ, TSTG -55 to 150 °C Thermal Data Parameter Maximum Junction-to-Ambient AF Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Symbol t 10s Steady-State Steady-State 1 R JA R JL Typ 70 100 63 Max 90 125 80 Units °C/W °C/W °C/W US3407 P-Ch 30V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=-250 A, VGS=0V -30 -1 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=-250 A -1.5 ID(ON) On state drain current VGS=-10V, VDS=-5V -30 RDS(ON) Static Drain-Source On-Resistance gFS Forward Transconductance VSD Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current TJ=55°C VGS=-10V, ID=-4.3A Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg (10V) Total Gate Charge (10V) Qg (4.5V) Total Gate Charge (4.5V) Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time -5 -2 -2.5 V A 48 68 VGS=-4.5V, ID=-3A 61 78 VDS=-5V, ID=-4.3A 11 -0.78 668 VGS=-10V, VDS=-15V, ID=-4.3A VGS=-10V, VDS=-15V, RL=3.5 , RGEN=3 m m S -1 V -2 A 830 pF 126 pF 92 VGS=0V, VDS=0V, f=1MHz A nA 39 VGS=0V, VDS=-15V, f=1MHz Units ±100 55 TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Coss Max V VDS=-30V, VGS=0V IDSS IS Typ pF 6 9 12.7 16 nC 6.4 nC 2 nC 4 nC 7.7 ns 6.8 ns 20 ns 10 trr Body Diode Reverse Recovery Time IF=-4.3A, dI/dt=100A/ s 22 Qrr Body Diode Reverse Recovery Charge IF=-4.3A, dI/dt=100A/ s 15 ns 30 ns nC A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using < 300 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. F. The current rating is based on the t 10s thermal resistance rating. Rev1: May. 2008 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 2 US3407 P-Ch 30V Fast Switching MOSFETs Typical Characteristics 10 30 -8V -10V 20 8 -4.5V 15 6 -ID(A) -ID (A) VDS=-5V -5V 25 -4V 25°C 4 10 VGS=-3.5V 5 2 0 125°C 0 0 1 2 3 4 5 0 1 100 Normalized On-Resistance RDS(ON) (m ) VGS=-4.5V 60 VGS=-10V 40 20 0 2 4 IF6=-6.5A, dI/dt=100A/ 8 10 s 4 5 VGS=-10V ID=-4.3A 1.4 VGS=-4.5V ID=-3A 1.2 1.0 0.8 0.6 -50 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 0 50 100 150 200 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 160 1E+01 ID=-4.3A 1E+00 120 1E-01 -IS (A) RDS(ON) (m ) 3 1.6 80 100 2 -VGS(Volts) Figure 2: Transfer Characteristics -VDS (Volts) Figure 1: On-Region Characteristics 140 -40°C 125°C 1E-02 125°C 80 1E-03 25°C FOR THE CONSUMER THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED MARKET. APPLICATIONS OR USES AS CRITICAL 60 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING 1E-04 25°C -40°CDESIGN, -40°C OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT 40 1E-05 FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 20 1E-06 2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VGS (Volts) -VSD (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics 3 US3407 P-Ch 30V Fast Switching MOSFETs 1200 10 Ciss Capacitance (pF) -VGS (Volts) 1000 VDS=-15V ID=-4.3A 8 6 4 2 800 600 400 Coss 200 0 Crss 0 0 3 6 9 12 15 0 6 -Qg (nC) Figure 7: Gate-Charge Characteristics 18 30 1ms TJ(Max)=150°C TA=25°C DC 0.1 0.1 1s Power (W) 100 s 1 100ms 0 0.001 Normalized Transient Thermal Resistance 1 JA.R JA 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) D=Ton/T TJ,PK=TA+PDM.Z R JA=125°C/W 12 6 -VDS (Volts) 10 18 10ms IF=-6.5A, dI/dt=100A/ s 10 100 1 30 TJ(Max)=150°C TA=25°C 24 10 s RDS(ON) limited 10 24 -VDS (Volts) Figure 8: Capacitance Characteristics 100 -ID (Amps) 12 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL PD COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING Z JA OUT OF SUCH 0.01APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, Ton FUNCTIONS AND RELIABILITY WITHOUT NOTICE. T Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance(Note E) 4 100 1000