SILAN 3VD396500YL

3VD396500YL
3VD396500YL HIGH VOLTAGE MOSFET CHIPS
DESCRIPTION
¾ 3VD396500YL is a High voltage N-Channel
enhancement mode power MOS-FET chip fabricated
in advanced silicon epitaxial planar technology;
¾ Advanced termination scheme to provide enhanced
voltage-blocking capability;
¾ Avalanche Energy Specified;
¾ Source-to-Drain Diode Recovery Time Comparable to
a Discrete Fast Recovery Diode;
¾ The chips may packaged in TO-220 type and the
typical equivalent product is 840;
CHIP TOPOGRAPHY
¾ The packaged product is widely used in AC-DC
power suppliers, DC-DC converters and H-bridge
PWM motor drivers;
¾ Die size: 4.13mm*3.98mm;
¾ Chip Thickness: 300±20μm;
¾ Top metal: Al, Backside Metal: Ag.
ABSOLUTE MAXIMUM RATINGS (Tamb=25°C)
Parameter
Symbo
l
Ratings
Unit
Drain-Source Voltage
VDS
500
V
Gate-Source Voltage
VGS
±20
V
Drain Current
ID
8.0
A
Power Dissipation (TO-220 Package)
PD
74
W
Operation Junction Temperature
TJ
-55~+150
°C
Tstg
-55~+150
°C
Storage Temperature
ELECTRICAL CHARACTERISTICS (Tamb=25°C)
Parameter
Drain -Source Breakdown Voltage
Symbol
BVDSS
Test conditions
Min.
Typ.
Max.
Unit
VGS=0V, ID=250µA
500
-
-
V
Gate Threshold Voltage
VTH
VGS= VDS, ID=250µA
2.0
-
4.0
V
Drain-Source Leakage Current
IDSS
VDS=500V, VGS=0V
-
-
1.0
µA
VGS=10V, ID=4.0A
-
0.76
0.9
Ω
IGSS
VGS=±30V, VDS=0V
-
-
±100
nA
VFSD
IS=8.0A, VGS=0V
-
-
1.4
V
Static Drain- Source On State
Resistance
Gate-Source Leakage Current
Source-Drain Diode Forward on
Voltage
RDS(on)
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.0
2008.07.28
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