VBO40-08NO6 3~ 1~ Rectifier Standard Rectifier VRRM = 800 V I DAV = 40 A I FSM = 320 A 1~ Rectifier Bridge Part number VBO40-08NO6 Backside: isolated 3 2 1 4 Features / Advantages: Applications: Package: SOT-227B (minibloc) ● Planar passivated chips ● Very low leakage current ● Very low forward voltage drop ● Improved thermal behaviour ● Diode for main rectification ● For one phase bridge configurations ● Supplies for DC power equipment ● Input rectifiers for PWM inverter ● Battery DC power supplies ● Field supply for DC motors ● Isolation Voltage: 3000 V~ ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 ● Base plate: Copper internally DCB isolated ● Advanced power cycling IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130517b VBO40-08NO6 Ratings Rectifier Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C max. 900 Unit V VRRM max. repetitive reverse blocking voltage TVJ = 25°C 800 V IR reverse current VF VR = 800 V TVJ = 25°C 40 µA TVJ = 150°C 1.5 mA TVJ = 25°C 1.15 V 1.33 V 1.07 V 20 A IF = 40 A IF = 20 A IF = 40 A TVJ = 125 °C TC = 115°C I DAV bridge output current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case rectangular R thCH thermal resistance case to heatsink total power dissipation I FSM max. forward surge current I²t CJ value for fusing junction capacitance IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved 1.31 V T VJ = 150 °C 40 A TVJ = 150 °C 0.81 V d = 0.5 for power loss calculation only Ptot typ. VR = 800 V IF = forward voltage drop min. 12.1 mΩ 1.3 K/W K/W 0.10 TC = 25°C 95 W t = 10 ms; (50 Hz), sine TVJ = 45°C 320 A t = 8,3 ms; (60 Hz), sine VR = 0 V 345 A t = 10 ms; (50 Hz), sine TVJ = 150 °C 270 A t = 8,3 ms; (60 Hz), sine VR = 0 V 295 A t = 10 ms; (50 Hz), sine TVJ = 45°C 510 A²s t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine VR = 0 V 495 A²s TVJ = 150 °C 365 A²s 360 A²s t = 8,3 ms; (60 Hz), sine VR = 0 V VR = 400 V; f = 1 MHz TVJ = 25°C Data according to IEC 60747and per semiconductor unless otherwise specified 11 pF 20130517b VBO40-08NO6 Package Ratings SOT-227B (minibloc) Symbol I RMS Definition Conditions RMS current per terminal Tstg storage temperature T VJ virtual junction temperature min. typ. max. 150 Unit A -40 150 °C -40 150 °C Weight 30 MD mounting torque MT terminal torque d Spp/App d Spb/Apb VISOL creepage distance on surface | striking distance through air t = 1 minute 1.1 1.5 1.1 1.5 Nm Nm terminal to terminal 10.5 3.2 mm terminal to backside 8.6 6.8 mm 3000 V 2500 V t = 1 second isolation voltage g 50/60 Hz, RMS; IISOL ≤ 1 mA Product Marking abcde Logo YYWW Z Part No. XXXXXX Assembly Code DateCode Assembly Line Ordering Standard Part Number VBO40-08NO6 Similar Part VBO40-12NO6 VBO40-16NO6 Equivalent Circuits for Simulation I V0 R0 Marking on Product VBO40-08NO6 Package SOT-227B (minibloc) SOT-227B (minibloc) * on die level Delivery Mode Tube Code No. 475866 Voltage class 1200 1600 T VJ = 150 °C Rectifier V 0 max threshold voltage 0.81 V R 0 max slope resistance * 10.2 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Quantity 10 Data according to IEC 60747and per semiconductor unless otherwise specified 20130517b VBO40-08NO6 Outlines SOT-227B (minibloc) 3 IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved 2 1 4 Data according to IEC 60747and per semiconductor unless otherwise specified 20130517b VBO40-08NO6 Rectifier 80 300 60 250 700 50 Hz 0.8 x V RRM VR = 0 V 600 500 IF IFSM 2 TVJ = 45°C It 200 40 [A] 400 [A] TVJ = 45°C 2 [A s] TVJ = 150°C TVJ = 150°C 300 TVJ = 125°C 150°C 20 150 200 TVJ = 25°C 0 0.6 0.8 1.0 1.2 1.4 1.6 100 10-3 1.8 100 10-2 10-1 100 t [s] Fig. 1 Forward current vs. voltage drop per diode Fig. 2 Surge overload current vs. time per diode 28 20 Ptot 16 10 2 Fig. 3 I t vs. time per diode 80 RthJA: DC = 1 0.5 0.4 0.33 0.17 0.08 24 1 t [ms] VF [V] DC = 0.6 KW 1 0.8 KW 1 KW 2 KW 4 KW 8 KW 60 0.5 0.4 0.33 IF(AV)M 0.17 40 [W] 12 0.08 [A] 8 20 4 0 0 0 5 10 15 20 0 25 50 75 100 125 150 0 175 25 50 TA [°C] IdAVM [A] 75 100 125 150 TC [°C] Fig. 4 Power dissipation vs. forward current and ambient temperature per diode Fig. 5 Max. forward current vs. case temperature per diode 1.6 1.2 Constants for ZthJC calculation: ZthJC 0.8 [K/W] 0.4 0.0 1 10 100 1000 i Rth (K/W) ti (s) 1 0.061 0.0002 2 0.145 0.0036 3 0.398 0.0200 4 0.405 0.1000 5 0.291 0.7000 10000 t [ms] Fig. 6 Transient thermal impedance junction to case vs. time per diode IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130517b