VEMT2500X01, VEMT2520X01 Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: surface mount • Package form: GW, RGW VEMT2520X01 VEMT2500X01 • Dimensions (L x W x H in mm): 2.3 x 2.3 x 2.8 • AEC-Q101 qualified • High radiant sensitivity • Suitable for visible and near infrared radiation • Fast response times • Angle of half sensitivity: ϕ = ± 15° • Package matched with IR emitter series VSMB2000X01 16758-10 • Floor life: 4 weeks, MSL 2a, acc. J-STD-020 • Lead (Pb)-free reflow soldering DESCRIPTION • Compliant to RoHS directive 2002/95/EC accordance to WEEE 2002/96/EC VEMT2500X01 series are silicon NPN epitaxial planar phototransistors in a miniature dome lens, clear epoxy package for surface mounting. The device is sensitive to visible and near infrared radiation. and in • Halogen-free according to IEC 61249-2-21 definition • Find out more about Vishay’s Automotive Grade Product requirements at: www.vishay.com/applications APPLICATIONS • Detector in automotive applications • Photo interrupters • Miniature switches • Counters • Encoders • Position sensors PRODUCT SUMMARY COMPONENT Ica (mA) ϕ (deg) λ0.1 (nm) VEMT2500X01 6 ± 15 470 to 1090 VEMT2520X01 6 ± 15 470 to 1090 Note Test condition see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM VEMT2500X01 Tape and reel MOQ: 6000 pcs, 6000 pcs/reel Reverse gullwing VEMT2520X01 Tape and reel MOQ: 6000 pcs, 6000 pcs/reel Gullwing Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL VALUE Collector emitter voltage TEST CONDITION VCEO 20 V Emitter collector voltage VECO 7 V IC 50 mA PV 100 mW Collector current Power power dissipation Document Number: 81134 Rev. 1.0, 29-Apr-09 Tamb ≤ 75 °C For technical questions, contact: [email protected] UNIT www.vishay.com 1 VEMT2500X01, VEMT2520X01 Silicon NPN Phototransistor Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION SYMBOL VALUE UNIT Tj 100 °C Operating temperature range Tamb - 40 to + 100 °C Storage temperature range Tstg - 40 to + 100 °C Acc. reflow profile fig. 7 Tsd 260 °C Acc. J-STD-051 RthJA 250 K/W Junction temperature Soldering temperature Thermal resistance junction/ambient Note Tamb = 25 °C, unless otherwise specified PV - Power Dissipation (mW) 120 100 80 60 RthJA = 250 K/W 40 20 0 0 21619 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (°C) Fig. 1 - Power Dissipation Limit vs. Ambient Temperature BASIC CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL MIN. IC = 0.1 mA VCEO 20 VCE = 5 V, E = 0 Collector emitter capacitance Collector light current Collector emitter breakdown voltage Collector dark current TYP. MAX. UNIT ICEO 1 100 nA VCE = 0 V, f = 1 MHz, E = 0 CCEO 25 Ee = 1 mW/cm2, λ = 950 nm, VCE = 5 V ICA V 3 6 pF 9 mA Angle of half sensitivity ϕ ± 15 deg Wavelength of peak sensitivity λp 850 nm λ0.1 470 to 1090 Range of spectral bandwidth Collector emitter saturation voltage IC = 0.05 mA VCEsat nm 0.4 V Note Tamb = 25 °C, unless otherwise specified www.vishay.com 2 For technical questions, contact: [email protected] Document Number: 81134 Rev. 1.0, 29-Apr-09 VEMT2500X01, VEMT2520X01 Silicon NPN Phototransistor Vishay Semiconductors BASIC CHARACTERISTICS Tamb = 25 °C, unless otherwise specified 1.2 S (λ)rel - Relative Spectral Sensitivity IF = 0 1000 VCE = 70 V VCE = 25 V VCE = 5 V 100 10 1.0 0.8 0.6 0.4 0.2 1 0 0 10 20594 20 30 40 50 60 70 80 90 100 400 500 Fig. 2 - Collector Dark Current vs. Ambient Temperature 600 700 800 1000 1100 Fig. 5 - Relative Spectral Sensitivity vs. Wavelength 0° 100 10° 20° 30° Srel - Relative Sensitivity Ica - Collector Light Current (mA) 900 λ - Wavelength (nm) 21555 Tamb - Ambient Temperature (°C) 10 1 VCE = 5 V, λ = 950 nm 0.1 40° 1.0 0.9 50° 0.8 60° 70° 0.7 ϕ - Angular Displacement ICE0 - Collector Dark Current (nA) 10 000 80° 0.01 0.01 0.1 1 0.6 10 Ee - Irradiance (mW/cm²) 21573 Fig. 3 - Collector Light Current vs. Irradiance 0.4 0.2 0 94 8248 Fig. 6 - Relative Radiant Sensitivity vs. Angular Displacement 100 tr/tf - Rise/Fall Time (µs) 90 80 RL = 100 Ω 70 60 50 40 tf 30 tr 20 10 0 0 20599 250 500 750 1000 1250 1500 1750 2000 IC - Collector Current (µA) Fig. 4 - Rise/Fall Time vs. Collector Current Document Number: 81134 Rev. 1.0, 29-Apr-09 For technical questions, contact: [email protected] www.vishay.com 3 VEMT2500X01, VEMT2520X01 Silicon NPN Phototransistor Vishay Semiconductors REFLOW SOLDER PROFILE DRYPACK Devices are packed in moisture barrier bags (MBB) to prevent the products from moisture absorption during transportation and storage. Each bag contains a desiccant. 300 255 °C 240 °C 217 °C 250 Temperature (°C) max. 260 °C 245 °C FLOOR LIFE 200 max. 30 s Floor life (time between soldering and removing from MBB) must not exceed the time indicated on MBB label: Floor life: 4 weeks Conditions: Tamb < 30 °C, RH < 60 % Moisture sensitivity level 2a, acc. to J-STD-020. 150 max. 100 s max. 120 s 100 max. ramp up 3 °C/s max. ramp down 6 °C/s 50 DRYING 0 0 50 100 19841 150 200 250 300 In case of moisture absorption devices should be baked before soldering. Conditions see J-STD-020 or label. Devices taped on reel dry using recommended conditions 192 h at 40 °C (+ 5 °C), RH < 5 %. Time (s) Fig. 7 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020 PACKAGE DIMENSIONS VEMT2500X01 in millimeters Ø 1.8 ± 0.1 1.6 0.1 9 2.77 ± 0.2 0.05 0.3 ± 0.1 0.4 2.2 5.8 2.2 ± 0.2 Exposed copper ± 0.2 1.1 ± 0.1 Z 20:1 2.3 0.254 ± 0.2 0.4 0.5 2.3 Collector PIN ID 1.7 Emitter 0.75 Solder pad proposal acc. IPC 7351 Technical drawings according to DIN specifications Not indicated to Ø 2.3 lerances ±0.1 ± 0.1 6.7 Drawing-No.: 6.544-5391.01-4 Issue: 1; 26.09.08 21570 www.vishay.com 4 For technical questions, contact: [email protected] Document Number: 81134 Rev. 1.0, 29-Apr-09 VEMT2500X01, VEMT2520X01 Silicon NPN Phototransistor Vishay Semiconductors PACKAGE DIMENSIONS VEMT2520X01 in millimeters Ø 1.8 0 .1 9 1.6 0.05 2.77 ± 0.2 0.3 0.4 2.2 2.2 4.2 ± 0.2 Exposed copper 0.6 0.75 Collector Pin ID Solder pad proposal acc. IPC 7351 0.254 2.3 ± 0.2 0.4 0.5 2.3 ± 0.2 Emitter Technical drawings according to DIN specifications Not indicated tolerances ± 0.1 2.45 5.15 Drawing-No.: 6.544-5383.01-4 Issue: 4; 28.01.09 21569 Document Number: 81134 Rev. 1.0, 29-Apr-09 For technical questions, contact: [email protected] www.vishay.com 5 VEMT2500X01, VEMT2520X01 Silicon NPN Phototransistor Vishay Semiconductors TAPE AND REEL DIMENSIONS VEMT2500X01 in millimeters Unreel direction X 2. Ø 62 ± 0.5 Reel Ø 13 ± 0.5 Ø 330 ± 1 0.5 5± Tape position coming out from reel 6000 pcs/reel Label posted here Technical drawings according to DIN specifications 12.4 ± 1.5 Leader and trailer tape: Empty (160 mm min.) Parts mounted Direction of pulling out Device Lead I Lead II Collector Emitter Cathode Anode I 4 ± 0.1 2 ± 0.05 X 2:1 VEMT2000 5.5 ± 0.05 VEMT2500 VEMD2000 VSMB2000 3.05 ± 0.1 II 12 ± 0.3 Ø 1.55 ± 0.05 Terminal position in tape 1.75 ± 0.1 Empty (400 mm min.) 4 ± 0.1 Drawing-No.: 9.800-5100.01-4 Issue: X; 29.04.09 21572 www.vishay.com 6 For technical questions, contact: [email protected] Document Number: 81134 Rev. 1.0, 29-Apr-09 VEMT2500X01, VEMT2520X01 Silicon NPN Phototransistor Vishay Semiconductors TAPE AND REEL DIMENSIONS VEMT2520X01 in millimeters Reel X Unreel direction 5± Ø 62 ± 0.5 2. Ø 13 ± 0.5 Ø 330 ± 1 0.5 Tape position coming out from reel 6000 pcs/reel technical drawings according to DIN specifications Label posted here 12.4 ± 1.5 Leader and trailer tape: Empty (160 mm min.) Parts mounted Direction of pulling out Terminal position in tape Device Ø 1.55 ± 0.05 Lead I Lead II Collector Emitter Cathode Anode I X 2:1 4 ± 0.1 2 ± 0.05 1.75 ± 0.1 Empty (400 mm min.) VSMB2020 VEMD2020 3.05 ± 0.1 II Drawing-No.: 4 ± 0.1 5.5 ± 0.05 VEMT2520 12 ± 0.3 VEMT2020 9.800-5091.01-4 Issue: X; 29.04.09 21571 Document Number: 81134 Rev. 1.0, 29-Apr-09 For technical questions, contact: [email protected] www.vishay.com 7 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1