VN05H HIGH SIDE SMART POWER SOLID STATE RELAY T YPE VN05H ■ ■ ■ ■ ■ ■ V DSS R DS(on ) I OUT V CC 60 V 0.18 Ω 12 A 36 V OUTPUT CURRENT (CONTINUOUS): 12A @ Tc=25oC LOGIC LEVEL 5V COMPATIBLE INPUT THERMAL SHUT-DOWN UNDER VOLTAGE SHUT-DOWN OPEN DRAIN DIAGNOSTIC OUTPUT VERY LOW STAND-BY POWER DISSIPATION DESCRIPTION The VN05H is a monolithic devices made using SGS-THOMSON Vertical Intelligent Power Technology, intended for driving resistive or inductive loads with one side grounded. Built-in thermal shut-down protects the chip from over temperature and short circuit. The input control is 5V logic level compatible. The open drain diagnostic output indicates open circuit (no load) and over temperature status. PENTAWATT (vertical) PENTAWATT (horizontal) PENTAWATT (in-line) ORDER CODES: PENTAWATT vertical VN05H PENTAWATT horizontal VN05H(011Y) PENTAWATT in-line VN05H(012Y) BLOCK DIAGRAM January 2002 1/10 VN05H ABSOLUTE MAXIMUM RATING Symb ol Valu e Un it Drain-Source Breakdown Voltage 60 V Output Current (cont.) 12 A IR Reverse O utput Current -12 A I IN Input Current ±10 mA V (BR)DSS I OUT Parameter V CC Supply Voltage (continuous) 40 V V CC Supply Voltage (pulsed) 60 V -V CC Reverse Supply Voltage -4 V I STAT Status Current ±10 mA Electrostatic Discharge (1.5 kΩ, 100 pF ) 2000 V V ESD P tot Tj o Power Dissipation at Tc ≤ 25 C Junction Operating Temperature T s tg Storage T emperature ESB Power Mos Avalanche Energy CONNECTION DIAGRAMS CURRENT AND VOLTAGE CONVENTIONS 2/10 52 W -40 to 150 o C -55 to 150 o C 350 mJ VN05H THERMAL DATA R t hj- case R t hj- amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max o 2.4 62.5 o C/W C/W o ELECTRICAL CHARACTERISTICS (VCC = 9 to 36 V; -40 ≤ Tj ≤ 125 C unless otherwise specified) POWER Symb ol Parameter Test Con ditio ns V CC Supply Voltage see note 1 R on On St ate Resistance I OUT = 6 A I OUT = 6 A IS Supply Current Min. Typ. 5.5 13 T j = 25 oC o T j ≥ 25 C Off State On State Max. Un it 36 V 0.18 0.36 Ω Ω 50 15 µA mA Max. Un it SWITCHING Symb ol Parameter Test Con ditio ns td (on) Turn-on Delay Time Of Output Current I OUT = 6 A Resistive Load Input Rise Time < 0.1 µs T j = 25 o C 15 µs Rise T ime Of Output Current I OUT = 6 A Resistive Load Input Rise Time < 0.1 µs T j = 25 o C 30 µs Turn-off Delay Time O f I OUT = 6 A Resistive Load Output Current Input Rise Time < 0.1 µs T j = 25 o C 20 µs Fall Time O f O utput Current I OUT = 6 A Resistive Load Input Rise Time < 0.1 µs T j = 25 o C 10 µs Turn-on Current Slope I OUT = 6 A I OUT = I OV 25 ≤ T j ≤ 140 o C 0.5 2 A/µs A/µs I OUT = 6 A I OUT = I OV 25 ≤ T j ≤ 140 o C 2 4 A/µs A/µs I OUT = 6 A L = 1 mH tr t d(of f) tf (di/dt) on (di/dt) off V demag Turn-off Current Slope Inductive Load Clamp Voltage Min. Typ. -7 -4 -2 V Min. Typ. Max. Un it 0.8 V (*) V LOGIC INPUT Symb ol Parameter V IL Input Low Level Voltage VI H Input High Level Voltage V I( hyst.) Input Hysteresis Voltage I IN V ICL Test Con ditio ns 2 0.5 Input Current VI N = 5 V Input Clamp Voltage I IN = 10 mA I IN = -10 mA V 50 6 -0.7 µA V V 3/10 VN05H ELECTRICAL CHARACTERISTICS (Continued) PROTECTION AND DIAGNOSTICS Symb ol V STAT (•) V USD V SCL (•) Parameter Status Voltage Output Low Test Con ditio ns Min. Typ. I STAT = 1.6 mA Under Voltage Shut Down Max. Un it 0.4 v 5.5 V 6 -0.7 V V Status Clamp Voltage I STAT = 10 mA I STAT = -10 mA I OV Over Current R LOAD < 10 mΩ I AV Average Current in Short Circuit I OL Open Load Current Level 5 T TSD Termal Shut-Down Temperature 140 o C TR Reset T emperature 125 o C R LOAD < 10 mΩ 20 o 1.4 T c = 85 C A A 180 mA (*) The VIH is internally clamped at 6V about. it is possible to connect thispin to an higher voltag e via an external resistor calculated to not exceed 10 mA at the input pin. ( •) Status determinaion > 100 µs after the switching edge. Note 1: Above VCC = 36V the output voltage is clamped to 36V. Power dissipation increases and the device turns off it junction temperature reaches thermal shutdown temperature. FUNCTIONAL DESCRIPTION The device has a diagnostic output which indicates open circuit (no load) and over temperature conditions. The output signals are processed by internal logic. To protect the device against short circuit and over-current condition the thermal protection turns the integrated Power MOS off at a minimum junction temperature of 140 oC. When the temperature returns to about 125 oC the switch is automatically turned on again. To ensur the protection in all VCC conditions and in all the junction temperature range it is necessary to limit the voltage drop across Drain and Source (pin 3 and 5) at 29 V. The device is able to withstand a load dump according the test pulse 5 at level III of the ISO TR/1 7631. Above VCC = 36V the output voltage is clamped to 36V. Power dissipation increases and the device turns off if junction temperature reaches thermal shutdown temperature. PROTECTING THE DEVICE AGAINST REVERSE BATTERY The simplest way to protect the device against a continuous reverse battery voltage (-26V) is to 4/10 insert a Schottky diode between pin 1 (GND) and ground, as shown in the typical application circuit (fig. 3). The consequences of the voltage drop across this diode are as follows: - If the input is pulled to power GND, a negative voltage of -VF is seen by the device. (VIL, VIH thresholds and VSTAT are increased by VF with respect to power GND). - The undervoltage shutdown level is increased by VF. If there is no need for the control unit to handle external analog signals referred to the power GND, the best approach is to connect the reference potential of the control unit to node [1] (see application circuit infig. 4), which becomes the common signal GND for the whole control board. In this way no shift of VIH, VIL and VSTAT takes place and no negative voltage appears on the INPUT pin; this solution allows the use of a standard diode, with a breakdown voltage able to handle any ISO normalized negative pulses that occours in the automotive environment. VN05H TRUTH TABLE INPUT O UTPUT DIAGNO ST IC Normal O peration L H L H H H Open Circuit (No Load) L H L H H L Over-temperature L H L L H L Under-voltage X X L L H H Figure 1: Waveforms Figure 2: Over Current Test Circuit 5/10 VN05H Figure 3: Typical Application Circuit With A Schottky Diode For Reverse Supply Protection Figure 4: Typical Application Circuit With Separate Signal Ground 6/10 VN05H PENTAWATT (VERTICAL) MECHANICAL DATA DIM. A C D D1 E F G G1 H1 H2 H3 L L1 L2 L3 L5 L6 L7 M M1 R V4 Dia MIN. 4.30 1.17 2.40 1.20 0.35 0.80 3.20 6.60 9.30 mm TYP. 10.05 17.50 15.45 21.00 22.10 2.60 15.10 6.00 4.15 3.65 MAX. 4.80 1.37 2.80 1.35 0.55 1.05 3.60 7.00 9.70 10.40 10.40 18.20 16.05 21.80 22.90 3.00 15.80 6.60 4.85 4.36 MIN. 0.169 0.046 0.094 0.047 0.014 0.031 0.126 0.260 0.366 0.396 0.689 0.608 0.827 0.870 0.102 0.594 0.236 0.163 0.143 0.5 90o 3.65 inch TYP. MAX. 0.189 0.054 0.110 0.053 0.022 0.041 0.142 0.276 0.382 0.409 0.409 0.716 0.632 0.858 0.901 0.118 0.622 0.260 0.191 0.171 0.020 90o 3.85 0.144 0.152 P010L3F 7/10 VN05H PENTAWATT (HORIZONTAL) MECHANICAL DATA mm DIM. MIN TYP inch MAX MIN TYP MAX A 4.30 4.80 0.169 0.189 C 1.17 1.37 0.046 0.054 D 2.40 2.80 0.094 0.110 E 0.35 0.55 0.014 0.021 F 0.80 1.05 0.031 0.041 G 3.20 3.60 0.126 0.142 G1 6.60 7.00 0.260 0.275 H1 9.30 9.70 0.366 0.382 H2 10.40 0.409 H3 10.05 10.40 0.396 0.409 L2 14.60 15.20 0.575 0.598 L3 3.50 4.10 0.137 0.161 L5 2.60 3.00 0.102 0.118 L6 15.10 15.80 0.594 0.622 L7 6.00 6.60 0.236 o V4 Diam. 90 3.65 0.260 90 3.85 0.144 o 0.151 PO1OL1_E 8/10 VN05H PENTAWATT (IN-LINE) MECHANICAL DATA DIM. A C D E F F2 F3 G G1 H1 H2 H3 L2 L3 L4 L5 L6 L7 V4 Diam. MIN 4.30 1.17 2.40 0.35 0.80 1.10 1.25 3.20 6.60 9.30 mm TYP inch TYP MIN 0.169 0.046 0.094 0.014 0.031 0.043 0.049 0.126 0.260 0.366 10.05 MAX 4.80 1.37 2.80 0.55 1.05 1.40 1.55 3.60 7.00 9.70 10.40 10.40 0.396 MAX 0.189 0.054 0.110 0.021 0.041 0.055 0.061 0.142 0.275 0.382 0.409 0.409 23.05 25.30 0.90 2.60 15.10 6.00 23.80 26.10 2.90 3.00 15.80 6.60 0.907 0.996 0.035 0.102 0.594 0.236 0.937 1.027 0.114 0.118 0.622 0.260 90o 3.65 90 3.85 0.144 o 0.151 P010D 9/10 VN05H Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 2000 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 10/10