Power management (dual transistors) VT6T1 (5) (4) 0 ~ 0.05 0.14 (1) (2) (3) 0.16 ± 0.05 0.13 ± 0.05 0.4 zApplications Switch, LED driver 0.4 0.2 ± 0.1 zFeatures Very small package with two transistors. 0.5 ± 0.1 1.2 ± 0.1 (6) 0.92 ± 0.1 1.2 ± 0.1 0.14 VMT6 0.2 ± 0.1 zDimensions (Unit : mm) zStructure PNP silicon epitaxial planar transistor 0.8 ± 0.1 Abbreviated symbol : T1 UNIT : mm Each lead has same dimensions. zPackaging specifications Package Type zInner circuit Taping Code T2R Basic ordering unit (pieces) 8000 (6) (5) Tr1 (4) Tr2 VT6T1 (1) (2) (3) (1) Emitter (2) Base (3) Collector (4) Emitter (5) Base (6) Collector (Tr1) (Tr1) (Tr2) (Tr2) (Tr2) (Tr1) z Absolute maximum ratings (Ta=25°C) Symbol Limits Unit Collector-base voltage VCBO −20 V Collector-emitter voltage VCEO −20 V Emitter-base voltage VEBO −5 V IC Parameter Collector current ICP Total Power dissipation Element Junction temperature Storage temperature PD −200 mA ∗1 −400 mA ∗2 150 mW 120 mW 150 −55 to +150 °C Tj Tstg °C ∗1 Pw=1mS Single pulse ∗2 Each terminal mounted on a recommended land zElectrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit BVCEO BVCBO − − − − − − −0.1 V V IC= −1mA IC= −50µA V IE= −50µA VCE(sat) −20 −20 −5 − − − µA µA V VCB= −20V VEB= −5V IC= −100mA, IB= −10mA DC current gain hFE 120 Transition frequency Output capacitance fT Cob − Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Collector-emitter saturation voltage www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ BVEBO ICBO IEBO − − − −0.12 − 350 3 1/2 −0.1 −0.30 − − MHz − pF 560 Conditions VCE= −2V, IC= −1mA VCE= −10V, IE=10mA, f=100MHz VCB= −10V, IE=0A, f=1MHz 2009.06 - Rev.A VT6T1 Data Sheet zElectrical characteristics curves Ta=125°C 25°C -55°C -10 -1 -0.1 -0.01 0 -0.2 -0.4 -0.6 -0.8 -1 -100 IB=0.5mA IB=0.3mA -40 IB=0.2mA -20 IB=0.1mA Ta=25°C 0 IC/IB = 20/1 IC/IB =10/1 -0.1 -1 -2 -3 -4 -5 -1 -10 -100 -1000 COLLECTOR CURRENT : IC (mA) Ta=125°C 25°C -55°C IC/IB= 10/1 Ta=125°C 25°C -55°C -0.1 -1 -10 -100 -1000 COLLECTOR CURRENT : IC (mA) -1 -10 -100 -1000 COLLECTOR CURRENT : IC (mA) COLLECTOR TO EMITTER VOLTAGE : VCE (V) -0.01 -0.01 VCE=2V 10 -0.1 IB=0mA 0 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) IB=0.4mA -60 -1 Ta=25°C 1000 IB=0.6mA -80 BASE TO EMITTER VOLTAGE : VBE (V) -1 IB=0.7mA DC CURENT GAIN : hFE -100 IB=1.0mA IB=0.9mA IB=0.8mA TRANSITION FREQUENCY :fT (MHz) VCE =2V COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) -1000 1000 VCE = 10V Ta=25°C 100 10 -0.1 -1 -10 -100 -1000 EMITTER CURRENT : IE (mA) 100 Cib Cob (pF) Cib (pF) 10 Cob 1 0.1 Ta=25°C f=1MHz IE=0 IC=0 -0.01 -0.1 -1 -10 -100 COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB(V) www.rohm.com c 2009 ROHM Co., Ltd. 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