High-voltage Amplifier Transistor (120V, 50mA) 2SC4102 / 2SC3906K Dimensions (Unit : mm) Features 1) High breakdown voltage. (BVCEO = 120V) 2) Complements the 2SA1579 / 2SA1514K 2.0 1.3 0.9 Unit V V V mA W Tj Tstg 150 −55 to +150 °C °C Junction temperature Storage temperature (2) (1) Limits 120 120 5 50 0.2 2.1 0.2 Symbol VCBO VCEO VEBO IC PC 0~0.1 Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation 1.25 0.15 Parameter 0.65 0.65 (3) 0.3 Absolute maximum ratings (Ta=25C) 0.7 2SC4102 0.1Min. Each lead has same dimensions ROHM : UMT3 EIAJ : SC-70 JEDEC : SOT-323 (1) Emitter (2) Base (3) Collector T∗ T146 3000 (2) (3) 2.8 0.3Min. ROHM : SMT3 EIAJ : SC-59 JEDEC : SOT-346 ∗Denotes h FE 1.1 T∗ T106 3000 Marking Code Basic ordering unit (pieces) 1.6 0.8 2SC3906K SMT3 RS 0~0.1 2SC4102 UMT3 RS 0.15 Type Package hFE 0.4 Packaging specifications and hFE 0.95 0.95 1.9 2.9 (1) 2SC3906K Each lead has same dimensions (1) Emitter (2) Base (3) Collector Electrical characteristics (Ta=25C) Symbol Min. Typ. Max. Unit Collector-base breakdown voltage Parameter BVCBO 120 − − V IC=50μA Collector-emitter breakdown voltage BVCEO 120 − − V IC=1mA Emitter-base breakdown voltage BVEBO 5 − − V IE=50μA ICBO − − 0.5 μA VCB=100V VEB=4V Collector cutoff current Conditions IEBO − − 0.5 μA VCE(sat) − − 0.5 V IC/IB=10mA/1mA hFE 180 − 560 − VCE=6V, IC=2mA Transition frequency fT − 140 − MHz Output capacitance Cob − 2.5 − pF Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio www.rohm.com c 2012 ROHM Co., Ltd. All rights reserved. ○ VCE=12V, IE=−2mA, f=100MHz VCB=12V, IE=0A, f=1MHz 1/2 2012.01 - Rev.B 2SC4102 / 2SC3906K Data Sheet Electrical characteristics curves 50 8 20.0 17.5 6 15.0 12.5 10.0 4 7.5 5.0 2 2.5 IB=0μA 4 0 8 Ta=25°C 16 20 12 20 10 5 2 1 0.5 0.1 0 0.2 0.1 IC/IB=50 0.05 20 10 0.02 1 2 5 10 20 50 0.2 0.4 10 5 2 1 −0.5 1 2 5 10 20 COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.7 Collector output capacitance vs. collector-base voltage www.rohm.com c 2012 ROHM Co., Ltd. All rights reserved. ○ 100 50 0.5 0.2 Ta=100°C 0.1 25°C −40°C 0.05 0.02 1 2 5 10 20 50 Fig.5 Collector-emitter saturation voltage vs. collector current ( ) 1 2 5 10 20 50 COLLECTOR CURRENT : IC (mA) Fig.3 DC current gain vs. collector current VCE=6V Ta=25°C IC/IB=10 0.5 COLLECTOR CURRENT : IC (mA) EMITTER INPUT CAPACITANCE : Cib(pF) COLLECTOR OUTPUT CAPACITANCE : Cob(pF) Ta=25°C f=1MHz IE=0A 20 VCE=1V 0.2 0.6 0.8 1.0 1.2 1.4 1.6 Fig.2 Ground emitter propagation characteristics COLLECTOR CURRENT : IC (mA) Fig.4 Collector-emitter saturation voltage vs. collector current ( ) 3V 200 BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR SATURATION VOLTAGE : VCE(sat)(V) COLLECTOR SATURATION VOLTAGE : VCE(sat)(V) Ta=25°C 0.5 5V 500 0.2 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.1 Ground emitter output characteristics Ta=25°C Ta=25°C VCE=6V TRANSITION FREQUENCY : fT (MHz) 22.5 DC CURRENT GAIN : hFE 25.0 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) 10 500 200 100 50 −0.5 −1 −2 −5 −10 −20 −50 COLLECTOR CURRENT : IE (mA) Fig.6 Gain bandwidth product vs. emitter current Ta=25°C f=1MHz IC=0A 20 10 5 2 1 −0.5 1 2 5 10 20 EMITTER TO BASE VOLTAGE : VEB (V) Fig.8 Emitter input capacitance vs. emitter-base voltage 2/2 2012.01 - Rev.B Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. 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