STW34NB20 N-CHANNEL 200V - 0.062 Ω - 34A TO-247 PowerMESH™ MOSFET Figure 1. Package Table 1. General Features Type VDSS RDS(on) ID STW34NB20 200 V < 0.075 Ω 34 A FEATURES SUMMARY ■ TYPICAL RDS(on) = 0.062 Ω ■ EXTREMELY HIGH dv/dt CAPABILITY ■ 100% AVALANCHE TESTED ■ VERY LOW INTRINSIC CAPACITANCES ■ GATE CHARGE MINIMIZED 3 2 1 TO-247 DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. Figure 2. Internal Schematic Diagram APPLICATIONS ■ SWITCH MODE POWER SUPPLIES (SMPS) ■ DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE ■ HIGH CURRENT, HIGH SPEED SWITCHING Table 2. Order Codes Part Number Marking Package Packaging STW34NB20 W34NB20 TO-247 TUBE REV. 2 April 2004 1/10 STW34NB20 Table 3. Absolute Maximum Ratings Symbol VDS VDGR VGS Parameter Value Unit Drain-source Voltage (VGS = 0) 200 V Drain- gate Voltage (RGS = 20 kΩ) 200 V Gate-source Voltage ± 30 V ID Drain Current (cont.) at TC = 25 °C 34 A ID Drain Current (cont.) at TC = 100 °C 21 A Drain Current (pulsed) 136 A Total Dissipation at TC = 25 °C 180 W Derating Factor 1.44 W°/C -65 to 150 °C 150 °C Value Unit IDM (1) Ptot Tstg Tj Storage Temperature Max. Operating Junction Temperature Note: 1. Pulse width limited by safe operating area Table 4. Thermal Data Symbol Parameter Rthj-case Thermal Resistance Junction-case Max 0.69 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 30 °C/W 300 °C Max Value Unit Tl Maximum Lead Temperature For Soldering Purpose Table 5. Avalanche Characteristics Symbol 2/10 Parameter IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max, δ < 1%) 34 A EAS Single Pulse Avalanche Energy (starting Tj = 25 °C; ID = IAR; VDD = 50 V) 650 mJ STW34NB20 ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise specified) Table 6. Off Symbol Parameter V(BR)DSS Drain-source Breakdown Voltage ID = 250 µA VGS = 0 IDSS Zero Gate Voltage VDS = Max Rating 1 µA Drain Current (VGS = 0) VDS = Max Rating Tc = 125 °C 10 µA Gate-body Leakage Current (VDS = 0) VGS = ± 30 V ± 100 nA IGSS Test Conditions Min. Typ. Max. 200 Unit V Table 7. On (1) Symbol Parameter Test Conditions VGS(th) Gate Threshold Voltage VDS = VGS; ID = 250 µA RDS(on) Static Drain-source On Resistance VGS = 10V; ID = 17 A Min. Typ. Max. Unit 3 4 5 V 0.062 0.075 Ω Min. Typ. Max. Unit 8 17 Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Table 8. Dynamic Symbol Parameter Test Conditions gfs (1) Forward Transconductance VDS > ID(on) x RDS(on)max; ID = 17 A Ciss Input Capacitance VDS = 25 V; f = 1 MHz; VGS = 0 Coss Crss S 2400 3300 pF Output Capacitance 650 900 pF Reverse Transfer Capacitance 90 130 pF Typ. Max. Unit Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Table 9. Switching On Symbol Parameter Test Conditions Min. Turn-on Time VDD = 100 V; ID = 17 A; RG = 4.7 Ω 30 40 ns Rise Time VGS = 10 V (see test circuit, Figure 16) 40 55 ns Qg Total Gate Charge VDD = 160 V; ID = 34 A; VGS = 10 V 60 80 nC Qgs Gate-Source Charge 19 nC Qgd Gate-Drain Charge 29 nC td(on) tr Table 10. Switching Off Symbol Parameter Test Conditions Min. Typ. Max. Unit Off-voltage Rise Time VDD = 160 V; ID = 34 A; RG = 4.7 Ω 17 23 ns tf Fall Time VGS = 10 V (see test circuit, Figure 18) 18 24 ns tc Cross-over Time 35 47 ns tr(Voff) 3/10 STW34NB20 Table 11. Source Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD Source-drain Current 34 A ISDM (1) Source-drain Current (pulsed) 136 A VSD (2) Forward On Voltage ISD = 34 A; VGS = 0 1.5 V trr Reverse Recovery Time ISD = 34 A; di/dt = 100 A/µs 290 ns Qrr Reverse RecoveryCharge VDD = 50 V; Tj = 150 °C (see test circuit, Figure 18) 2.7 µC IRRAM Reverse RecoveryCharge 18.5 A Note: 1. Pulse width limited by safe operating area 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Figure 3. Safe Operating Area Figure 4. Thermal Impedance Figure 5. Output Characteristics Figure 6. Transfer Characteristics 4/10 STW34NB20 Figure 7. Transconductance Figure 8. Static Drain-source On Resistance Figure 9. Gate Charge vs Gate-source Voltage Figure 10. Capacitance Variations Figure 11. Normalized Gate Thresold Voltage vs Temperature Figure 12. Normalized On Resistance vs Temperature 5/10 STW34NB20 Figure 13. Source-drain Diode Forward Characteristics 6/10 STW34NB20 Figure 14. Unclamped Inductive Load Test Circuit Figure 15. Unclamped Inductive Waveforms Figure 16. Switching Times Test Circuits For Resistive Load Figure 17. Gate Charge Test Circuit Figure 18. Test Circuit For Inductive Load Switching And Diode Recovery Times 7/10 STW34NB20 PACKAGE MECHANICAL Table 12. TO-247 Mechanical Data Symbol millimeters Min Max Min A 4.85 5.15 0.19 0.20 A1 2.20 2.60 0.086 0.102 b 1.0 1.40 0.039 0.055 b1 2.0 2.40 0.079 0.094 b2 3.0 3.40 0.118 0.134 c 0.40 0.80 0.015 0.03 D 19.85 20.15 0.781 0.793 E 15.45 15.75 0.608 e Typ 5.45 Typ Max 0.620 0.214 L 14.20 14.80 0.560 0.582 L1 3.70 4.30 0.14 0.17 L2 18.50 0.728 ØP 3.55 3.65 0.140 0.143 ØR 4.50 5.50 0.177 0.216 S 5.50 Figure 19. TO-247 Package Dimensions Note: Drawing is not to scale. 8/10 inches 0.216 STW34NB20 REVISION HISTORY Table 13. Revision History Date Revision Description of Changes January-1998 1 First Issue 14-Apr-2004 2 Stylesheet update. No content change. 9/10 STW34NB20 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. 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