WMS128K8V-XXX ABSOLUTE MAXIMUM RATINGS Parameter TRUTH TABLE Symbol Min Max Unit CS OE WE Mode Data I/O Power TA -55 +125 °C °C H L L L X L X H X H L H Standby Read Write Out Disable High Z Data Out Data In High Z Standby Active Active Active Operating Temperature TSTG -65 +150 Signal Voltage Relative to GND VG -0.5 Vcc+0.5 V Junction Temperature TJ 150 °C 5.5 V Storage Temperature Supply Voltage VCC -0.5 CAPACITANCE (TA = +25°C) RECOMMENDED OPERATING CONDITIONS Parameter Symbol Min Max Unit Supply Voltage VCC 3.0 3.6 V Input capacitance Input High Voltage VIH 2.2 V CC + 0.3 V Output capacitance Input Low Voltage VIL -0.3 +0.8 V Operating Temp. (Mil.) TA -55 +125 °C Parameter Symbol Condition CIN VIN = 0V, f = 1.0MHz Max Unit 20 pF COUT VOUT = 0V, f = 1.0MHz 20 pF This parameter is guaranteed by design but not tested. DC CHARACTERISTICS (VCC = 3.3V ±0.3V, VSS = 0V, TA = -55°C to +125°C) Parameter Sym Conditions Units Min Max 10 µA Input Leakage Current ILI VCC = 3.3, VIN = GND to VCC Output Leakage Current ILO CS = VIH, OE = VIH, VOUT = GND to VCC 10 µA Operating Supply Current (x 32 Mode) ICC CS = VIL, OE = VIH, f = 5MHz, VCC = 3.3 120 mA Standby Current ISB CS = VIH, OE = VIH, f = 5MHz, VCC = 3.3 8 mA Output Low Voltage VOL IOL = 8mA 0.4 V Output High Voltage VOH IOH = -4.0mA 2.4 AC TEST CIRCUIT V AC TEST CONDITIONS I OL Parameter Current Source VZ D.U.T. ≈ 1.5V (Bipolar Supply) C eff = 50 pf I OH Current Source White Electronic Designs Corporation • Phoenix, AZ • (602) 437-1520 2 Typ Unit Input Pulse Levels VIL = 0, VIH = 2.5 V Input Rise and Fall 5 ns Input and Output Reference Level 1.5 V Output Timing Reference Level 1.5 V NOTES: V Z is programmable from -2V to +7V. I OL & IOH programmable from 0 to 16mA. Tester Impedance Z0 = 75 Ω. V Z is typically the midpoint of VOH and V OL. I OL & IOH are adjusted to simulate a typical resistive load circuit. ATE tester includes jig capacitance. WMS128K8V-XXX AC CHARACTERISTICS (VCC = 3.3V, TA = -55°C to +125°C) Parameter Symbol Read Cycle -15 Min Read Cycle Time t RC Address Access Time t AA Output Hold from Address Change t OH Chip Select Access Time t ACS -17 Max 15 Min -20 Max 17 -25 Max 20 15 0 Min 10 ns 35 ns 35 ns 20 ns 0 20 11 Units Max 25 0 17 Min 35 20 0 15 -35 Max 25 17 0 Min ns 25 Output Enable to Output Valid t OE Chip Select to Output in Low Z t CLZ 1 5 5 5 12 5 15 5 Output Enable to Output in Low Z t OLZ 1 5 5 5 5 5 Chip Disable to Output in High Z t CHZ 1 8 9 10 12 15 ns Output Disable to Output in High Z t OHZ 1 8 9 10 12 15 ns ns ns 1. This parameter is guaranteed by design but not tested. AC CHARACTERISTICS (VCC = 3.3V, TA = -55°C to +125°C) Parameter Symbol Write Cycle -15 Min -17 Max Min -20 Max Min -25 Max Min -35 Max Min Units Max Write Cycle Time t WC 15 17 20 25 35 ns Chip Select to End of Write t CW 13 14 15 20 30 ns Address Valid to End of Write t AW 13 14 15 20 30 ns Data Valid to End of Write t DW 10 11 12 15 18 ns Write Pulse Width t WP 13 14 15 20 30 ns Address Setup Time t AS 0 0 0 0 0 ns Address Hold Time t AH 0 0 0 0 0 ns Output Active from End of Write t OW 1 5 5 5 5 5 Write Enable to Output in High Z t WHZ 1 Data Hold Time t DH 8 0 9 0 10 0 10 0 ns 15 0 ns ns 1. This parameter is guaranteed by design but not tested. 3 White Electronic Designs Corporation • Phoenix, AZ • (602) 437-1520 WMS128K8V-XXX TIMING WAVEFORM - READ CYCLE tRC ADDRESS tAA CS tRC tCHZ tACS ADDRESS tCLZ tAA OE tOE tOLZ tOH DATA I/O PREVIOUS DATA VALID DATA I/O DATA VALID tOHZ DATA VALID HIGH IMPEDANCE READ CYCLE 1 (CS = OE = VIL, WE = VIH) READ CYCLE 2 (WE = VIH) WRITE CYCLE - WE CONTROLLED tWC ADDRESS tAW tAH tCW CS tAS tWP WE tOW tWHZ DATA I/O tDW tDH DATA VALID WRITE CYCLE 1, WE CONTROLLED WRITE CYCLE - CS CONTROLLED WS32K32-XHX White Electronic Designs Corporation • Phoenix, AZ • (602) 437-1520 4 WMS128K8V-XXX PACKAGE 101: 32 LEAD, CERAMIC SOJ ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES PACKAGE 220: 32 LEAD, CERAMIC FLAT PACK ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES 5 White Electronic Designs Corporation • Phoenix, AZ • (602) 437-1520 WMS128K8V-XXX PACKAGE 300: 32 PIN, CERAMIC DIP, SINGLE CAVITY SIDE BRAZED ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES White Electronic Designs Corporation • Phoenix, AZ • (602) 437-1520 6 WMS128K8V-XXX PACKAGE 601: 32 PIN, RECTANGULAR CERAMIC LEADLESS CHIP CARRIER ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES 7 White Electronic Designs Corporation • Phoenix, AZ • (602) 437-1520 WMS128K8V-XXX ORDERING INFORMATION W M S 128K8 V - XXX X X X LEAD FINISH: Blank = Gold plated leads A = Solder dip leads DEVICE GRADE: M = Military Screened -55°C to +125°C I = Industrial -40°C to +85°C C = Commercial 0°C to +70°C PACKAGE: C = 32 Pin Ceramic .600" DIP (Package 300) CL = 32 Pin Rectangular Ceramic Leadless Chip Carrier (Package 601) DR = 32 Lead Ceramic SOJ (Package 101) Revolutionary FR = 32 Lead Ceramic Flat Pack (Package 220**) Revolutionary ACCESS TIME (ns) IMPROVEMENT MARK: Low Voltage Supply 3.3V ± 10% ORGANIZATION, 128K x 8 SRAM MONOLITHIC WHITE ELECTRONIC DESIGNS CORP. ** Package under developement. 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