WS128K32-XXX HI-RELIABILITY PRODUCT 128Kx32 SRAM MODULE, SMD 5962-93187 & 5962-95595 FEATURES ■ Commercial, Industrial and Military Temperature Ranges ■ Access Times of 15, 17, 20, 25, 35, 45, 55ns ■ MIL-STD-883 Compliant Devices Available ■ Packaging ■ 5 Volt Power Supply • 66 pin, PGA Type, 1.075" square, Hermetic Ceramic HIP (Package 400) ■ Low Power CMOS • 68 lead, 40mm CQFP (G4T), 3.56mm (0.140") (Package 502). ■ Built in Decoupling Caps and Multiple Ground Pins for Low Noise Operation • 68 lead, 22.4mm CQFP (G2T), 4.57mm (0.180"), (Package 509) ■ Weight: WS128K32-XG1UX - 5 grams typical WS128K32-XG2TX - 8 grams typical WS128K32-XH1X - 13 grams typical WS128K32-XG4TX - 20 grams typical ■ TTL Compatible Inputs and Outputs • 68 lead, 22.4mm Low Profile CQFP (G1U), 3.57mm (0.140"), (Package 519) ■ Organized as 128Kx32; User Configurable as 256Kx16 or 512Kx8 ■ Low Power Data Retention - only available in G2T package type FIG. 1 ■ All devices are upgradeable to 512Kx32 PIN CONFIGURATION FOR WS128K32N-XH1X PIN DESCRIPTION TOP VIEW 1 12 23 WE2 I/O8 34 I/O15 45 VCC I/O24 I/O0-31 Data Inputs/Outputs 56 I/O31 I/O9 CS2 I/O14 I/O25 CS4 I/O30 I/O10 GND I/O13 I/O26 WE4 I/O29 A13 I/O11 I/O12 A6 I/O27 I/O28 A14 A10 OE A7 A3 A0 A15 A11 NC NC A4 A1 A16 A12 WE1 A8 A5 A2 NC VCC I/O7 A9 WE3 I/O23 CS1 I/O6 I/O16 CS3 I/O22 I/O1 NC I/O5 I/O17 GND I/O21 I/O2 I/O3 I/O4 I/O18 I/O19 I/O20 11 22 33 44 55 Write Enables CS1-4 Chip Selects OE Output Enable VCC Power Supply GND Ground NC Not Connected WE2 CS2 WE3 CS 3 WE 4CS4 OE A0-16 128K x 8 8 66 I/O0-7 January 2001 Rev. 7 Address Inputs BLOCK DIAGRAM WE1 CS 1 I/O0 A0-16 WE1-4 1 128K x 8 8 I/O8-15 128K x 8 8 I/O16-23 128K x 8 8 I/O24-31 White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com WS128K32-XXX FIG. 2 PIN CONFIGURATION FOR WS128K32-XG4TX PIN DESCRIPTION NC A0 A1 A2 A3 A4 A5 CS1 GND CS3 WE A6 A7 A8 A9 A10 VCC TOP VIEW 9 8 7 6 5 4 3 2 1 68 67 66 65 64 63 62 61 I/O0 I/O1 I/O2 I/O3 I/O4 I/O5 I/O6 I/O7 GND I/O8 I/O9 I/O10 I/O11 I/O12 I/O13 I/O14 I/O15 60 59 58 57 56 55 54 53 52 51 50 49 48 47 46 45 44 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 I/O16 I/O17 I/O18 I/O19 I/O20 I/O21 I/O22 I/O23 GND I/O24 I/O25 I/O26 I/O27 I/O28 I/O29 I/O30 I/O31 I/O0-31 Data Inputs/Outputs A0-16 Address Inputs WE Write Enables CS1-4 Chip Selects OE Output Enable VCC Power Supply GND Ground NC Not Connected BLOCK DIAGRAM CS3 CS 2 CS 1 CS4 WE OE A0-16 128K x 8 128K x 8 128K x 8 128K x 8 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 VCC A11 A12 A13 A14 A15 A16 CS2 OE CS4 NC NC NC NC NC NC NC 8 I/O0-7 FIG. 3 8 I/O16-23 I/O8-15 PIN CONFIGURATION FOR WS128K32-XG2TX AND WS128K32-XG1UX TOP VIEW I/O24-31 PIN DESCRIPTION NC A0 A1 A2 A3 A4 A5 CS3 GND CS4 WE1 A6 A7 A8 A9 A10 VCC I/O0 I/O1 I/O2 I/O3 I/O4 I/O5 I/O6 I/O7 GND I/O8 I/O9 I/O10 I/O11 I/O12 I/O13 I/O14 I/O15 8 8 I/O0-31 Data Inputs/Outputs 9 8 7 6 5 4 3 2 1 68 67 66 65 64 63 62 61 A0-16 Address Inputs WE1-4 Write Enables CS1-4 Chip Selects OE Output Enable VCC Power Supply 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 60 59 58 57 56 55 54 53 52 51 50 49 48 47 46 45 44 I/O16 I/O17 I/O18 I/O19 I/O20 I/O21 I/O22 I/O23 GND I/O24 I/O25 I/O26 I/O27 I/O28 I/O29 I/O30 I/O31 The White 68 lead G2T/G1U CQFP fills the same fit and function as the JEDEC 68 lead CQFJ or 68 PLCC. But the G2T/G1U has the TCE and lead inspection advantage of the CQFP form. Ground NC Not Connected BLOCK DIAGRAM WE1 CS 1 128K x 8 8 I/O0-7 White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com GND WE2 CS2 WE3 CS 3 WE 4CS4 OE A0-16 NC NC NC WE4 WE3 NC WE2 A16 CS1 OE CS2 A15 A14 A13 A12 A11 VCC 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 0.940" 2 128K x 8 8 I/O8-15 128K x 8 8 I/O16-23 128K x 8 8 I/O24-31 WS128K32-XXX ABSOLUTE MAXIMUM RATINGS Parameter TRUTH TABLE Symbol Min Max Unit CS OE WE Mode Data I/O Power TA -55 +125 °C °C H L L L X L X H X H L H Standby Read Write Out Disable High Z Data Out Data In High Z Standby Active Active Active Operating Temperature TSTG -65 +150 Signal Voltage Relative to GND VG -0.5 Vcc+0.5 V Junction Temperature TJ 150 °C 7.0 V Storage Temperature Supply Voltage -0.5 VCC CAPACITANCE (TA = +25°C) RECOMMENDED OPERATING CONDITIONS Parameter Symbol Min Max Unit Supply Voltage VCC 4.5 5.5 V Input High Voltage VIH 2.2 V CC + 0.3 V Input Low Voltage VIL -0.3 +0.8 V Operating Temp. (Mil.) TA -55 +125 °C Parameter Symbol Conditions Max OE capacitance COE VIN = 0 V, f = 1.0 MHz WE1-4 capacitance HIP (PGA) H1 CQFP G4 CQFP G2T G1U CWE VIN = 0 V, f = 1.0 MHz Unit 50 pF pF 20 50 20 20 CS1-4 capacitance CCS VIN = 0 V, f = 1.0 MHz 20 pF Data I/O capacitance CI/O VI/O = 0 V, f = 1.0 MHz 20 pF Address input capacitance CAD VIN = 0 V, f = 1.0 MHz 50 pF This parameter is guaranteed by design but not tested. DC CHARACTERISTICS (V CC = 5.0V, GND = 0V, TA = -55°C to +125°C) Parameter Sym Conditions -15 Min -17 Max 10 Min -20 Max 10 Min -25 Max 10 Min Units Max 10 µA Input Leakage Current ILI VCC = 5.5, VIN = GND to VCC Output Leakage Current ILO CS = VIH, OE = VIH, VOUT = GND to VCC 10 10 10 10 µA Operating Supply Current ICC CS = VIL , OE = VIH, f = 5MHz, Vcc = 5.5 600 600 600 600 mA Standby Current ISB CS = VIH, OE = VIH, f = 5MHz, Vcc = 5.5 80 80 80 60 mA Output Low Voltage VOL IOL = 8mA, VCC = 4.5 0.4 0.4 0.4 0.4 Output High Voltage VOH IOH = -4.0mA, VCC = 4.5 Parameter Sym 2.4 2.4 Conditions 2.4 -35 Min 2.4 -45 Max 10 Min -55 Max 10 V V Min Units Max 10 µA Input Leakage Current ILI VCC = 5.5, VIN = GND to VCC Output Leakage Current ILO CS = VIH, OE = VIH, VOUT = GND to VCC 10 10 10 µA Operating Supply Current ICC CS = VIL, OE = VIH, f = 5MHz, Vcc = 5.5 600 600 600 mA Standby Current ISB CS = VIH, OE = VIH, f = 5MHz, Vcc = 5.5 60 60 60 mA Output Low Voltage VOL IOL = 2.1mA, VCC = 4.5 0.4 0.4 0.4 Output High Voltage VOH IOH = -1.0mA, VCC = 4.5 2.4 2.4 2.4 V V NOTE: DC test conditions: VIH = VCC -0.3V, VIL = 0.3V LOWER POWER DATA RETENTION CHARACTERISTICS (L PRODUCT ONLY) (TA = -55°C to +125°C), (TA = -40°C to +85°C) Characteristic Lower Power Data Retention Voltage Sym VCC Lower Power Data Retention Quiescent Current ICCDR Chip Disable to Data Retention Time (1) TCDR TR or VIN ≤ 0.2V TRC Operation Recovery Time (1) Conditions VCC = 2.0V Min 2 Typ - Max - Units V CS ≥ VCC -0.2V - 1 4 mA VIN ≥ VCC -0.2V 0 - - ns - ns NOTE: Parameter guaranteed, but not tested. 3 White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com WS128K32-XXX AC CHARACTERISTICS (V CC = 5.0V, GND = 0V, T A = -55°C to +125°C) Parameter Symbol Read Cycle -15 Min Read Cycle Time t RC Address Access Time t AA Output Hold from Address Change t OH Chip Select Access Time t ACS -17 Max 15 Min -20 Max Min 17 20 15 0 -25 Max 0 Min Min 45 55 ns 55 ns 55 ns 30 ns 0 35 15 Units Max 45 0 25 12 -55 Max 35 0 20 10 -45 Max 25 0 17 10 Min 35 20 0 -35 Max 25 17 15 Min ns 45 Output Enable to Output Valid t OE Chip Select to Output in Low Z t CLZ 1 3 3 3 3 3 20 3 25 3 Output Enable to Output in Low Z t OLZ 1 0 0 0 0 0 0 0 Chip Disable to Output in High Z t CHZ 1 12 12 12 12 20 20 20 ns Output Disable to Output in High Z t OHZ 1 12 12 12 12 20 20 20 ns ns ns 1. This parameter is guaranteed by design but not tested. AC CHARACTERISTICS (VCC = 5.0V, GND = 0V, TA = -55°C to +125°C) Parameter Symbol Write Cycle -15 Min -17 Max Min -20 Max Min -25 Max Min -35 Max Min -45 Max Min -55 Max Min Units Max Write Cycle Time t WC 15 17 20 25 35 45 t CW 14 14 15 20 25 30 WS128K32-XXX / 55 EDI8C32128C 45 ns Chip Select to End of Write Address Valid to End of Write t AW 14 15 15 20 25 30 45 ns Data Valid to End of Write t DW 10 10 12 15 20 25 25 ns Write Pulse Width t WP 14 14 15 20 25 30 45 ns Address Setup Time t AS 0 0 0 0 0 0 0 ns Address Hold Time t AH 0 0 0 0 0 0 0 ns Output Active from End of Write t OW 1 3 3 3 3 4 4 4 Write Enable to Output in High Z t WHZ 1 Data Hold Time 10 0 t DH 10 12 0 0 15 0 20 0 25 ns 25 0 ns 0 ns ns 1. This parameter is guaranteed by design but not tested. FIG. 4 AC TEST CONDITIONS AC TEST CIRCUIT Parameter I OL Current Source VZ D.U.T. ≈ 1.5V (Bipolar Supply) C eff = 50 pf I OH Current Source White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com 4 Typ Unit Input Pulse Levels VIL = 0, VIH = 3.0 V Input Rise and Fall 5 ns Input and Output Reference Level 1.5 V Output Timing Reference Level 1.5 V NOTES: VZ is programmable from -2V to +7V. I OL & IOH programmable from 0 to 16mA. Tester Impedance Z0 = 75 Ω. VZ is typically the midpoint of V OH and VOL. I OL & IOH are adjusted to simulate a typical resistive load circuit. ATE tester includes jig capacitance. WS128K32-XXX FIG. 5 TIMING WAVEFORM - READ CYCLE tRC ADDRESS tAA CS tRC tCHZ tACS ADDRESS tCLZ tAA OE tOE tOLZ tOH DATA I/O PREVIOUS DATA VALID DATA I/O DATA VALID tOHZ DATA VALID HIGH IMPEDANCE READ CYCLE 1 (CS = OE = VIL, WE = VIH) READ CYCLE 2 (WE = VIH) FIG. 6 WRITE CYCLE - WE CONTROLLED tWC ADDRESS tAW tAH tCW CS tAS tWP WE tOW tWHZ tDW DATA I/O tDH DATA VALID WRITE CYCLE 1, WE CONTROLLED FIG. 7 WRITE CYCLE - CS CONTROLLED tWC WS32K32-XHX ADDRESS tAS tAW tAH tCW CS tWP WE tDW DATA I/O tDH DATA VALID WRITE CYCLE 2, CS CONTROLLED 5 White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com WS128K32-XXX PACKAGE 400: 66 PIN, PGA TYPE, CERAMIC HEX-IN-LINE PACKAGE, HIP (H1) 27.3 (1.075) ± 0.25 (0.010) SQ PIN 1 IDENTIFIER SQUARE PAD ON BOTTOM 25.4 (1.0) TYP 4.34 (0.171) MAX 3.81 (0.150) ± 0.13 (0.005) 1.42 (0.056) ± 0.13 (0.005) 0.76 (0.030) ± 0.13 (0.005) 2.54 (0.100) TYP 1.27 (0.050) TYP DIA 15.24 (0.600) TYP 0.46 (0.018) ± 0.05 (0.002) DIA 25.4 (1.0) TYP ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES PACKAGE 502: 68 LEAD, CERAMIC QUAD FLAT PACK, LOW PROFILE CQFP (G4T) 39.6 (1.56) ± 0.38 (0.015) SQ PIN 1 IDENTIFIER 3.56 (0.140) MAX Pin 1 12.7 (0.500) ± 0.5 (0.020) 4 PLACES 5.1 (0.200) ± 0.25 (0.010) 4 PLACES 0.38 (0.015) ± 0.08 (0.003) 68 PLACES 1.27 (0.050) TYP 0.25 (0.010) ± 0.05 (0.002) 38 (1.50) TYP 4 PLACES ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com 6 WS128K32-XXX PACKAGE 509: 68 LEAD, LOW PROFILE CERAMIC QUAD FLAT PACK, CQFP (G2T) 25.15 (0.990) ± 0.26 (0.010) SQ 4.57 (0.180) MAX 22.36 (0.880) ± 0.26 (0.010) SQ 0.27 (0.011) ± 0.04 (0.002) 0.25 (0.010) REF Pin 1 R 0.25 (0.010) 24.03 (0.946) ± 0.26 (0.010) 0.19 (0.007) ± 0.06 (0.002) 1° / 7° 1.0 (0.040) ± 0.127 (0.005) 23.87 (0.940) REF DETAIL A 1.27 (0.050) TYP SEE DETAIL "A" 0.38 (0.015) ± 0.05 (0.002) 20.3 (0.800) REF The White 68 lead G2T CQFP fills the same fit and function as the JEDEC 68 lead CQFJ or 68 PLCC. But the G2T has the TCE and lead inspection advantage of the CQFP form. 0.940" TYP ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES PACKAGE 519: 68 LEAD, CERAMIC QUAD FLAT PACK, LOW PROFILE CQFP (G1U) 25.27 (0.995) ± 0.13 (0.005) SQ 3.56 (0.140) MAX 23.88 (0.940) ± 0.25 (0.010) SQ 0.25 (0.010) 0.61 (0.024) ± 0.15 (0.006) 0.84 (0.033) REF DETAIL A 1.27 (0.050) SEE DETAIL "A" 0.38 (0.015) ± 0.05 (0.002) 20.3 (0.800) REF The White 68 lead G1U CQFP fills the same fit and function as the JEDEC 68 lead CQFJ or 68 PLCC. But the G1U has the TCE and lead inspection advantage of the CQFP form. 0.940" TYP ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES 7 White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com WS128K32-XXX ORDERING INFORMATION W S 128K 32 X - XXX X X X LEAD FINISH: Blank = Gold plated leads A = Solder dip leads DEVICE GRADE: Q = MIL-STD-883 Compliant M = Military Screened -55°C to +125°C I = Industrial -40°C to +85°C C = Commercial 0°C to +70°C PACKAGE TYPE: H1 = 1.075" sq. Ceramic Hex-In-line Package, HIP (Package 400) G2T = 22.4mm Ceramic Quad Flat Pack, CQFP (Package 509) G1U = 22.4mm Ceramic Quad Flat Pack, Low Provile CQFP (Package 519) G4T = 40 mm Low Profile CQFP (Package 502) ACCESS TIME (ns) IMPROVEMENT MARK: N = No Connect at pin 8, 21, 28 and 39 in HIP for Upgrades L = Low Power ORGANIZATION, 128Kx32 User configurable as 256Kx16 or 512Kx8 SRAM WHITE ELECTRONIC DESIGNS CORPORATION White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com 8 WS128K32-XXX DEVICE TYPE SPEED PACKAGE 128K x 32 SRAM Module 55ns 66 pin HIP (H1) 5962-93187 05H4X 128K x 32 SRAM Module 45ns 66 pin HIP (H1) 5962-93187 06H4X 128K x 32 SRAM Module 35ns 66 pin HIP (H1) 5962-93187 07H4X 128K x 32 SRAM Module 25ns 66 pin HIP (H1) 5962-93187 08H4X 128K x 32 SRAM Module 20ns 66 pin HIP (H1) 5962-93187 09H4X 128K x 32 SRAM Module 17ns 66 pin HIP (H1) 5962-93187 10H4X 128K x 32 SRAM Module 15ns 66 pin HIP (H1) 5962-93187 11H4X 128K x 32 SRAM Module 55ns 68 lead CQFP Low Profile (G4T) 5962-95595 05HYX 128K x 32 SRAM Module 45ns 68 lead CQFP Low Profile (G4T) 5962-95595 06HYX 128K x 32 SRAM Module 35ns 68 lead CQFP Low Profile (G4T) 5962-95595 07HYX 128K x 32 SRAM Module 25ns 68 lead CQFP Low Profile (G4T) 5962-95595 08HYX 128K x 32 SRAM Module 20ns 68 lead CQFP Low Profile (G4T) 5962-95595 09HYX 128K x 32 SRAM Module 17ns 68 lead CQFP Low Profile (G4T) 5962-95595 10HYX 128K x 32 SRAM Module 15ns 68 lead CQFP Low Profile (G4T) 5962-95595 11HYX 128K x 32 SRAM Module 55ns 68 lead CQFP/J (G2T) 5962-95595 05HMX 128K x 32 SRAM Module 45ns 68 lead CQFP/J (G2T) 5962-95595 06HMX 128K x 32 SRAM Module 35ns 68 lead CQFP/J (G2T) 5962-95595 07HMX 128K x 32 SRAM Module 25ns 68 lead CQFP/J (G2T) 5962-95595 08HMX 128K x 32 SRAM Module 20ns 68 lead CQFP/J (G2T) 5962-95595 09HMX 128K x 32 SRAM Module 17ns 68 lead CQFP/J (G2T) 5962-95595 10HMX 128K x 32 SRAM Module 15ns 68 lead CQFP/J (G2T) 5962-95595 11HMX 128K x 32 SRAM Module 55ns 68 lead CQFP/J(G1U) 5962-95595 05H9X 128K x 32 SRAM Module 45ns 68 lead CQFP/J (G1U) 5962-95595 06H9X 128K x 32 SRAM Module 35ns 68 lead CQFP/J (G1U) 5962-95595 07H9X 128K x 32 SRAM Module 25ns 68 lead CQFP/J (G1U) 5962-95595 08H9X 128K x 32 SRAM Module 20ns 68 lead CQFP/J (G1U) 5962-95595 09H9X 128K x 32 SRAM Module 17ns 68 lead CQFP/J (G1U) 5962-95595 10H9X 128K x 32 SRAM Module 15ns 68 lead CQFP/J (G1U) 5962-95595 11H9X 9 SMD NO. White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com