WTN9575 Surface Mount P-Channel Enhancement Mode Power MOSFET P b Lead(Pb)-Free DRAIN CURRENT -4.0 AMPERES DRAIN SOURCE VOLTAGE 2,4 DRAIN -60 VOLTAGE 1 GATE Features: 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN 3 SOURCE * Super high dense cell design for low RDS(ON) RDS(ON) < 90mΩ @ VGS = -10V * Simple Drive Requirement * Lower On-Resistance * Fast Switching 4 1 2 3 SOT-223 Maximum Ratings (TA=25°C Unless Otherwise Specified) Rating Symbol Value Unit Drain-Source Voltage VDS -60 V Gate-Source Voltage VGS ±25 V ID -4.0 -3.2 A Pulsed Drain Current 1 IDM -20 A Total Power Dissipation(T A=25°C) PD 3.0 W RθJA 45 °C/W TJ +150 °C Tstg -55 ~ +150 °C Continuous Drain Current3 ,VGS@10V(TA=25°C) ,VGS@10V(TA=70°C) Maximum Junction-ambient 3 Operating Junction Temperature Range Storage Temperature Range Device Marking WTN9575 = 9575 WEITRON http:www.weitron.com.tw 1/6 18-Jul-07 WTN9575 Electrical Characteristics (TA = 25°C Unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)DSS -60 - - V VGS(Th) -1.0 - -3.0 V Gate-Source Leakage Current VGS = ± 25V IGSS - - ±100 nA Drain-Source Leakage Current(Tj=25°C) VDS = -60A, VGS = 0 Drain-Source Leakage Current(Tj=70°C) VDS = -48V, VGS = 0 IDSS - - -1 - - -25 Static Drain-Source Breakdown Voltage VGS = 0, ID = -250µA Gate-Source Threshold Voltage VDS = VGS, ID = -250µA Drain-Source On-Resistance2 VGS = -10A, ID = -4.0A VDS = -4.5A, ID = -3.0A RDS(ON) - - Forward Transconductance VDS = -10A, ID = -4.0A gfs - Input Capacitance VGS = 0V, VDS = -25V, f = 1.0MHz Ciss Output Capacitance VGS = 0V, VDS = -25V, f = 1.0MHz Reverse Transfer Capacitance VGS = 0V, VDS = -25V, f = 1.0MHz μA 90 120 mΩ 7 - S - 1745 2790 Coss - 165 - Crss - 125 - Dynamic WEITRON http:www.weitron.com.tw 2/6 pF 18-Jul-07 WTN9575 Switching Turn-on Delay Time2 VDS=-30V,VGS=-10V,ID=-1A,R D=30Ω,RG=3.3Ω td(on) - 12 - Rise Time VDS=-30V,VGS=-10V,ID=-1A,R D=30Ω,RG=3.3Ω tr - 5 - Turn-off Delay Time VDS=-30V,VGS=-10V,ID=-1A,R D=30Ω,RG=3.3Ω td(off) - 68 - Fall Time VDS=-30V,VGS=-10V,ID=-1A,R D=30Ω,RG=3.3Ω tf - 32 - Total Gate Charge2 VDS=-48V,VGS=-4.5V,ID=-4.0A Qg - 18 28 Gate-Source Charge VDS=-48V,VGS=-4.5V,ID=-4.0A Qgs - 5.0 - Gate-Drain Change VDS=-48V,VGS=-4.5V,ID=-4.0A Qgd - 7.0 - Forward On Voltage2 VGS=0V, IS=-2.0A VSD - - -1.2 V Reverse Recovery Time VGS=0V, IS=-4.0A, dl/dt=100A/μs Trr - 56 - ns Reverse Recovery Charge VGS=0V, IS=-4.0A, dl/dt=100A/μs Qrr - 146 - nC ns nC Source-Drain Diode Characteristics Note: 1. Pulse width limited by max, junction temperature. 2. Pulse width ≤ 300μs, duty cycle ≤ 2%. 3. Surface mounted on 1 in2 copper pad of FR4 board; 125°C/W when mounted on Min, copper pad. WEITRON http://www.weitron.com.tw 3/6 18-Jul-07 WTN9575 Characteristics Curve WEITRON http://www.weitron.com.tw 4/6 18-Jul-07 WTN9575 Duty factor = 0.5 0.2 0.1 0.05 0.02 0.01 Single pulse PDM t T Duty factor = t / T Peak Tj=P DM x R θ ju + Tu Rθ ja =135°C / W WEITRON http://www.weitron.com.tw 5/6 18-Jul-07 WTN9575 SOT-223 Outline Dimensions unit:mm A F DIM 4 S 1 2 3 B D L G J C H WEITRON http://www.weitron.com.tw M K 6/6 A B C D F G H J K L M S MILLIMETERS MIN MAX 6.30 3.30 1.50 0.60 2.90 2.20 0.020 0.24 1.50 0.85 0 6.70 6.70 3.70 1.75 0.89 3.20 2.40 0.100 0.35 2.00 1.05 10 7.30 18-Jul-07