STX13005 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR n HIGH VOLTAGE CAPABILITY n LOW SPREAD OF DYNAMIC PARAMETERS n n Figure 1: Package MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED APPLICATION n n COMPACT FLUORESCENT LAMPS (CFLS) TO-92 SWITCH MODE POWER SUPPLIES (AC / DC CONVERTERS) Figure 2: Internal Schematic Diagram DESCRIPTION The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and high voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA. Table 1: Order Code Part Number Marking Package Packaging STX13005 X13005 TO-92 Bulk STX13005-AP X13005 TO-92 AP Ammopack Table 2: Absolute Maximum Ratings Symbol Parameter VCES Collector-Emitter Voltage (VBE = 0) VCEO Collector-Emitter Voltage (IB= 0) VEBO Emitter-Base Voltage (IC= 0, IB = 1.5 A, tp < 10ms) IC ICM IB Value Unit 700 V 400 V V(BR)EBO V Collector Current 3 A Collector Peak Current (tp < 5ms) 6 A Base Current 1.5 A IBM Base Peak Current (tp < 5ms) 3 A Ptot Total Dissipation at TC = 25 oC 2.8 W February 2005 Rev. 2 1/9 STX13005 Symbol Parameter Tstg Storage Temperature TJ Max. Operating Junction Temperature Value Unit -65 to 150 °C 150 °C Table 3: Thermal Data Symbol Parameter Unit Rthj-case Thermal Resistance Junction-Case Max 44.6 oC/W Rthj-amb Thermal Resistance Junction-ambient Max 150 oC/W Table 4: Electrical Characteristics (Tcase = 25 oC unless otherwise specified) Symbol ICES ICEO Parameter Test Conditions Collector Cut-off Current (VBE = 0) VCE = 700 V Collector Cut-off Current VCE = 400 V VCE = 700 V Min. Typ. Tj = 125 oC Max. Unit 1 mA 5 mA 1 mA 18 V (IB = 0 ) V(BR)EBO Emitter-Base IE = 10 mA L = 25 mH 9 Breakdown Voltage (IC = 0 ) VCE(sus)* Collector-Emitter IC = 10 mA 400 V Sustaining Voltage (IB = 0 ) VCE(sat)* Collector-Emitter IB = 200 mA 0.5 V IC = 2 A IB = 500 mA 0.6 V IC = 3 A IB = 750 mA 5 V Base-Emitter IC = 1 A IB = 200 mA 1.2 V Saturation Voltage IC = 2 A IB = 500 mA 1.6 V Saturation Voltage VBE(sat)* hFE* DC Current Gain IC = 1 A IC = 1 A VCE = 5 V 10 30 IC = 2 A VCE = 5 V 8 24 RESISTIVE LOAD IC = 2 A VCC = 125 V ts Storage Time IB1 = - IB2 = 400 mA tp = 30 µs tf Fall Time VClamp = 300 V µs 260 ns INDUCTIVE LOAD (see figure 16) IC = 1 A ts Storage Time IB1 = 200 mA VBE(off) = -5 V 0.8 µs tf Fall Time L = 50 mH RBB = 0 150 ns (see figure 15) * Pulsed: Pulsed duration = 300 ms, duty cycle ≤ 1.5 %. 2/9 1.65 STX13005 Figure 3: Safe Operating Area Figure 6: Derating Curve Figure 4: Output Chatacterisctics Figure 7: DC Current Gain Figure 5: DC Current Gain Figure 8: Collector-Emitter Saturation Voltage 3/9 STX13005 Figure 9: Base-Emitter Saturation Voltage Figure 12: Resistive Load Storage Time Figure 10: Resistive Load Fall Time Figure 13: Inductive Load Storage Time Figure 11: Inductive Load Fall Time Figure 14: Reverse Biased Safe Operating Area 4/9 STX13005 Figure 15: Inductive Load Switching Test Circuit 1) Fast electronic switch 2) Non-inductive Resistor 3) Fast recovery rectifier Table 16: Restistive Load Switching Test Circuit 1) Fast electronic switch 2) Non-inductive Resistor 5/9 STX13005 TO-92 BULK SHIPMENT MECHANICAL DATA DIM. mm. MIN. TYP MAX. A 4.32 4.95 b 0.36 0.51 D 4.45 4.95 E 3.30 3.94 e 2.41 2.67 e1 1.14 1.40 L 12.70 15.49 R 2.16 2.41 S1 0.92 1.52 W 0.41 0.56 V 5O 0102782 C 6/9 STX13005 TO-92 AMMOPACK SHIPMENT (Suffix”-AP”) MECHANICAL DATA DIM. A1 T T1 T2 d P0 P2 F1,F2 delta H W W0 W1 W2 H H0 H1 D0 t L I1 delta P MIN. 12.50 5.65 2.44 -2.00 17.50 5.70 8.50 mm. TYP 12.70 6.35 2.54 18.00 6.00 9.00 18.50 15.50 16.00 3.80 4.00 3.00 -1.00 MAX. 4.80 3.80 1.60 2.30 0.48 12.90 7.05 2.94 2.00 19.00 6.30 9.25 0.50 20.50 16.50 25.00 4.20 0.90 11.00 1.00 7/9 STX13005 Table 5: Revision History 8/9 Date Release 01-Jul-2004 11-Feb-2005 1 2 Change Designator First Release. New table on page 1. STX13005 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners © 2005 STMicroelectronics - All Rights Reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 9/9