BUL416 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR n STMicroelectronics PREFERRED SALES TYPE n NPN TRANSISTOR n HIGH VOLTAGE CAPABILITY n VERY HIGH SWITCHING SPEED n FULLY CHARACTERISEZ AT 125 oC n LOW SPREAD OF DYNAMIC PARAMETERS Figure 1: Package 3 APPLICATIONS n n TO-220 ELECTRONIC BALLAST FOR FLUORESCENT LIGHTING SWITCH MODE POWER SUPPLIES 1 2 Figure 2: Internal Schematic Diagram DESCRIPTION The device is manufactured using high voltage Multi-Epitaxial Mesa technology for cost-effective high performance. It uses a Hollow Emitter structure to enhance switching speeds. The BUL series is designed for use in lighting applications and low cost switch-mode power supplies. Table 1: Order Codes Part Number Marking Package Packaging BUL416 BUL416A or (#) BUL416B TO-220 Tube # See:note on page 2 Table 2: Absolute Maximum Ratings Symbol VCES Parameter VCEO Collector-Emitter Voltage (VBE = 0) Collector-Emitter Voltage (IB = 0) VEBO IC ICM IB IBM Value Unit 1600 V 800 V Emitter-Base Voltage (IC = 0) 9 V Collector Current 6 A Collector Peak Current (tp < 5ms) 9 A Base Current 5 A 8 A Base Peak Current (tp < 5ms) o Ptot Total Dissipation at TC = 25 C Tstg Storage Temperature January 2005 110 W -65 to 150 °C Rev. 3 1/8 BUL416 Symbol TJ Parameter Value Unit 150 °C Max. Operating Junction Temperature Table 3: Thermal Data Rthj-case Thermal Resistance Junction-Case Max 1.14 o C/W Rthj-amb Thermal Resistance Junction-Ambient Max 62.5 o C/W Table 4: Electrical Characteristics (Tcase = 25 oC unless otherwise specified) Symbol ICES Parameter Test Conditions Collector Cut-off Current VCE = 1600 V (VBE =0 V) V = 1600 V CE ICEO Min. Typ. Tj = 125 oC Collector Cut-off Current VCE = 800 V Max. Unit 100 µA 500 µA 250 µA (IB = 0) VCEO(sus)* Collector-Emitter Sustaining Voltage IC = 100 mA L = 25 mH 800 V 9 V (IB = 0 ) VEBO Emitter-Base Voltage IE = 10 mA (IC = 0 ) VCE(sat)* VBE(sat)* hFE* Collector-Emitter Saturation Voltage IC = 2 A IB = 0.4 A 1.5 V IC = 4 A IB = 1.33 A 3 V Base-Emitter Saturation IC = 2 A Voltage IC = 4 A IB = 0.4 A 1.2 V IB = 1.33 A 1.5 V DC Current Gain IC = 10 mA VCE = 5 V IC = 0.7 A VCE = 5 V 10 Group A 12 27 40 INDUCTIVE LOAD Group B IC = 3 A 25 IB1 = 1 A ts Storage Time VBE(off) = -5 V RBB = 0 W 2.3 µs tf Fall Time Vclamp = 200 V L = 200 µH 650 ns INDUCTIVE LOAD (see figure 12) IC = 3 A IB1 = 1 A ts Storage Time VBE(off) = -5 V RBB = 0 W 3 µs tf Fall Time Vclamp = 200 V L = 200 µH 680 ns Tj = 100 oC * Pulsed: Pulsed duration = 300 ms, duty cycle ≤ 1.5 %. (see figure 12) # Note: Product is pre-selected in DC current gain (Group A and Group B). STMicroelectronics reserves the right to ship either groups according to production availability. Please contact your nearest STMicrolectronics sales office for delivery datails. 2/8 BUL416 Figure 3: Safe Operating Area Figure 6: Derating Curve Figure 4: DC Current Gain Figure 7: DC Current Gain Figure 5: Collector-Emitter Saturation Voltage Figure 8: Base-Emitter Saturation Voltage 3/8 BUL416 Figure 9: Inductive Load Fall Time Figure 10: Reverse Biased SOA 4/8 Figure 11: Resistive Load Stoarage Time BUL416 Figure 12: Inductive Load Switching Test Circuit 1) Fast electronic switch 2) Non-inductive Resistor 3) Fast recovery rectifier 5/8 BUL416 TO-220 MECHANICAL DATA DIM. mm. MIN. inch MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 D 15.25 15.75 0.60 0.620 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 F 1.23 1.32 0.048 0.052 H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107 0.551 L 13 14 0.511 L1 3.50 3.93 0.137 L20 16.40 L30 6/8 TYP 0.154 0.645 28.90 1.137 øP 3.75 3.85 0.147 0.151 Q 2.65 2.95 0.104 0.116 BUL416 Table 5: Version Release Date 14-Jan-2004 09-Sep-2004 26-Jan-2005 1 2 3 Change Designator First Release. Second Release. Third Release. 7/8 BUL416 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners © 2005 STMicroelectronics - All Rights Reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 8/8