Series Voltage Detectors ( Delay Circuit Built-In) ◆CMOS ■Applications ◆Mini Mold Package ●Microprocessor reset circuitry ◆Highly Accurate 2 ●Memory battery back-up circuits : ±2% ●Power-on reset circuits ◆Built-In Delay Circuit (1ms ~ 50ms) ●Power failure detection (50ms ~ 200ms) ●System battery life and charge voltage monitors (80ms ~ 400ms) ◆Low Power Consumption : 1.0µA (VIN = 2.0V) ●Delay circuitry ■General Description ■Features The XC61F series are highly accurate, low power consumption voltage detectors, manufactured using CMOS and laser trimming technologies. A delay circuit is built-in to each detector. Detect voltage is extremely accurate with minimal temperature drift. Both CMOS and N-channel open drain output configurations are available. Since the delay circuit is built-in, peripherals are unecessary and high density mounting is possible. Highly Accurate : Detect voltage ± 2% Low Power Consumption : TYP 1.0 µA [ VIN=2.0V ] Detect Voltage Range : 1.6V ~ 6.0V in 0.1V increments Operating Voltage Range : 0.7V ~ 10.0V Detect Voltage Temperature Characteristics : TYP± 100ppm/°C Built-In Delay Circuit : 1ms ~ 50ms, 50ms ~ 200ms, 80ms ~ 400ms Output Configuration : N-channel open drain or CMOS Ultra Small Packages : SOT-23 (150mW) mini-mold : SOT-89 (500mW) mini-power mold : TO-92 (300mW) * No parts are available with an accuracy of ± 1% ■Typical Application Circuits ■Typical Performance Characteristic R VIN VOUT VSS CMOS output VIN VOUT 100kΩ AMBIENT TEMPERATURE vs. TRANSIENT DELAY TIME XC61FC3012 VSS N-channel open drain output 200 TDLY (msec) VIN VIN 150 100 50 -30 -10 10 30 50 70 Ambient Temp.: Ta(℃) 157 XC61F Seires ■Pin Configuration VIN 3 2 VSS 1 VOUT 1 VOUT SOT-23 (TOP VIEW) 2 2 3 VIN VSS SOT-89 (TOP VIEW) 1 2 VOUT VIN 3 1 2 3 VSS VIN VSS VOUT TO-92 (T Type) (TOP VIEW) ■Pin Assignment PIN NUMBER SOT-23 158 PIN SOT-89 TO-92 (T) TO-92 (L) NAME FUNCTION 3 2 2 1 V IN Supply Voltage Input 2 3 3 2 VSS Ground 1 1 1 3 VOUT Output TO-92 (L Type) (TOP VIEW) XC61F Series ■Product Classification ●Ordering Information XC61F XXXXXXX ↑↑↑↑↑↑↑ a bbcd e f DESIGNATOR a b c d DESCRIPTION Output Configuration : C = CMOS N = N-ch open drain Detect Voltage (VDF) : 25 = 2.5V 38 = 3.8V Output Delay : 1 = 50ms to 200ms 4 = 80ms to 400ms 5 = 1ms to 50ms Detect Accuracy : 2 = within ± 2.0% DESIGNATOR e f DESCRIPTION Package Type : M = SOT-23 P = SOT-89 T = TO-92 (Regular) L = TO-92 (Custom pin Configuration) 2 Device Orientation : R = Embossed Tape ( Right ) L = Embossed Tape ( Left ) H: Paper Tape (TO-92) B: Bag (TO-92) ■Packaging Information ●SOT-23 0.4 +0.1 +0.1 -0.05 0.15 -0.05 +0.2 -0.1 0.2min 1.6 2.8±0.2 0∼0.1 (0.95) 1.1±0.1 1.9±0.2 2.9±0.2 159 XC61F Seires ●SOT-89 1.5±0.1 0.8 min 2 4.25max +0.15 -0.2 2.5±0.1 1.6 (0.4) 4.5±0.1 0.42±0.06 0.42±0.06 0.4 +0.03 -0.02 0.47±0.06 1.5±0.1 1.5±0.1 ●TO-92 +0.35 -0.45 1.6±0.1 3.7±0.3 10.0min 4.8 -0.5 +0.4 4.65 0.45±0.1 +0.4 2.5 -0.1 160 +0.4 2.5 -0.1 0.4±0.05 XC61F Series ■Marking ●SOT-23, SOT-89 q w e r w r q e SOT-23 (TOP VIEW) 2 SOT-89 (TOP VIEW) q Represents the integer of the Detect Voltage and the Output Configuration CMOS output (XC61FC series) DESIGNATOR CONFIGURATION CMOS A CMOS B CMOS C CMOS D CMOS E CMOS F CMOS H VOLTAGE (V) 0.w 1.w 2.w 3.w 4.w 5.w 6.w N-channel open drain (XC61FN series) DESIGNATOR CONFIGURATION VOLTAGE (V) N-ch K 0.w N-ch L 1.w N-ch M 2.w N-ch N 3.w N-ch P 4.w N-ch 5.w R 6.w N-ch S w Represents the decimal number of the Detect Voltage e Indicates the presence of delay time DESIGNATOR 5 6 7 DESIGNATOR VOLTAGE (V) DESIGNATOR VOLTAGE (V) q.5 q.0 5 0 q.6 q.1 6 1 q.7 q.2 7 2 q.3 q.8 8 3 q.9 q.4 9 4 DELAY TIME 50 to 200ms 80 to 400ms 1 to 50ms r Represents the assembly lot no. Based on internal standards ●TO-92 61C 1 61C 1 w Represents w Re the Detect Voltage q Represents the output configuration DESIGNATOR D DESIGNATOR OUTPUT CONFIGURATION 2 3 4 5 L 2 3 4 5 w e VOLTAGE(V) C CMOS 3 3 3 3.3 N N-ch 5 5 0 5.0 6 7 6 7 w r Indicates Delay Time TO-92(T Type) (TOP VIEW) TO-92(L Type) (TOP VIEW) DESIGNATOR DELAY TIME 1 50ms∼200ms 4 80ms∼400ms 5 1ms∼50ms t Represents the Detect Voltage Accuracy y Represents a least significant digit of the produced year DESIGNATOR DETECT VOLTAGE ACCURACY 2 within ±2% DESIGNATOR PRODUCED YEAR 0 2000 1 2001 u Denotes the production lot number 0 to 9, A to Z repeated(G.I.J.O.Q.W excepted) 161 XC61F Seires ■Block Diagram ■Absolute ■絶対最大定格 PARAMETER (1)CMOS output VIN UNITS VIN 12 V IOUT 50 mA CMOS N-ch open drain VOUT VSS -0.3 ∼ VIN +0.3 V VSS -0.3 ∼ 9 150 SOT-23 Continuous Total Power Dissipation Vref Ta=25℃ RATINGS Input Voltage VOUT Delay Circuit SYMBOL Output Current Output Voltage 2 Maximum Ratings 500 Pd SOT-89 mW 300 TO-92 Operating Ambient Temperature Topr -30 ∼ +80 O C Storage Temperature Tstg -40 ∼ +125 O C VSS (2)N-channel open drain output VIN VOUT Delay Circuit Vref VSS ■Electrical Characteristics Ta=25℃ PARAMETER SYMBOL Detect Voltage V DF Hysteresis Range VHYS Supply Current I SS Operating Voltage V IN CONDITIONS IOUT P-ch Detect Voltage Temperature Characteristics Transient Delay Time (VDR VOUT inversion) VIN=1.5V =2.0V =3.0V =4.0V =5.0V VDF=1.6V to 6.0V VDS=0.5V VIN=1.0V =2.0V =3.0V =4.0V =5.0V VDS=2.1V VIN=8.0V ( CMOS output ) MAX VDF (T) x 1.02 VDF VDF VDF x 0.02 x 0.05 x 0.08 0.9 1.0 1.3 1.6 2.0 2.6 3.0 3.4 3.8 4.2 10.0 0.7 2.2 7.7 10.1 11.5 13.0 CIRCUIT V 1 V 1 µA 2 V 1 3 mA 4 ± 100 VIN changes from 0.6V to 10V UNITS -10.0 ∆ VDF ∆ Topr • VDF tDLY * TYP VDF (T) x 0.98 N-ch Output Current MIN VDF (T) 50 200 ppm/°C - ms 5 VDF(T):established detect voltage value Release Voltage : VDR = V DF + V HYS * Transient Delay Time : 1ms to 50ms & 80ms to 400ms versions are also available. Note : The power consumption during power-start to output being stable (release operation) is 2 µA greater than it is after that period (completion of release operation) because of delay circuit through current. 162 XC61F Series ■Functional Description ●Functional Description ( CMOS output ) q When a voltage higher than the release voltage (VDR) is applied to the voltage input pin (VIN), the voltage will gradually fall. When a voltage higher than the detect voltage (VDF) is applied to VIN , output (VOUT) will be equal to the input at VIN. Note that high impedeance exists at VOUT with the N-channel open drain configuration. If the pin is pulled up, VOUT will be equal to the pull up voltage. w When VIN falls below VDF , VOUT will be equal to the ground voltage (VSS) level (detect state). Note that this also applies to N-channel open drain configurations. e When VIN falls to a level below that of the minimum operating voltage (VMIN ) output will become unstable. Because the output pin is generally pulled up with N-channel open drain configurations, output will be equal to pull up voltage. r When VIN rises above the VSS level (excepting levels lower than minimum operating voltage), VOUT will be equal to VSS until VIN reaches the VDR level. t Although VIN will rise to a level higher than VDR, VOUT maintains ground voltage level via the delay circuit. y Following transient delay time, VIN will be output at VOUT. Note that high impedeance exists with the N-channel open drain configuration and that voltage will be dependent on pull up. 2 Notes : 1. 2. The difference between VDR and VDF represents the hysteresis range. Propagation delay time (tDLY) represents the time it takes for VIN to appear at VOUT once the said voltage has exceeded the VDR level. ●Timing Chart ■タイミングチャート Input Voltage (VIN) Detect Release Voltage (VDR) y Detect Voltage (VDF) Minimum Operating Voltage(VMIN) Ground Voltage (VSS) Output Voltage (VOUT) Propagation Delay Time (tDLY) Ground Voltage (VSS) q w e r t y 163 XC61F Seires ■Directions for use ●Notes on Use 1. 2. 3. 2 4. 5. 6. Please use this IC within the stated maximum ratings. The IC is liable to malfunction should the ratings be exceeded. When a resistor is connected between the VIN pin and the input with CMOS output configurations, oscillation may occur as a result of voltage drops at RIN if load current (IOUT) exists. It is therefore recommend that no resistor be added. ( refer to N.B. 1 - (1) below ) When a resistor is connected between the VIN pin and the input with CMOS output configurations, irrespective of N-ch output configurations, oscillation may occur as a result of through current at the time of voltage release even if load current (IOUT ) does not exist. ( refer to N.B. 1 - (2) below ) With a resistor connected between the VIN pin and the input, detect and release voltage will rise as a result of the IC's supply current flowing through the VIN pin. If a resistor (RIN ) must be used, then please use with as small a level of input impedance as possible in order to control the occurences of oscillation as described above. Further, please ensure that RIN is less than 10kΩ and that CIN is more than 0.1µF (Diagram 1). In such cases, detect and release voltages will rise due to voltage drops at RIN brought about by the IC's supply current. Depending on circuit's operation, transient delay time of this IC can be widely changed due to upper limits or lower limits of operational ambient temparature. ●N.B. ■備考 1. Oscillation (1) Oscillation as a result of output current with the CMOS output configuration : When the voltage applied at IN rises, release operations commence and the detector's output voltage increases. Load current (IOUT) will flow through RL. Because a voltage drop ( RIN x IOUT) is produced at the RIN resistor, located between the input (IN) and the VIN pin, the load current will flow via the IC's VIN pin. The voltage drop will also lead to a fall in the voltage level at the VIN pin. When the VIN pin voltage level falls below the detect voltage level, detect operations will commence. Following detect operations, load current flow will cease and since voltage drop at RIN will disappear, the voltage level at the VIN pin will rise and release operations will begin over again. Oscillation may occur with this " release - detect - release " repetition. Further, this condition will also appear via means of a similar mechanism during detect operations. (2) Oscillation as a result of through current : Since the XC61F series are CMOS ICS, through current will flow when the IC's internal circuit switching operates ( during release and detect operations ). Consequently, oscillation is liable to occur during release voltage operations as a result of output current which is influenced by this through current ( Diagram 3 ). Since hysteresis exists during detect operations, oscillation is unlikely to occur. RIN XC61FN Series VIN RIN VOUT VIN VSS CIN Diagram1. When using an input resistor 164 XC61FC Series VOUT VSS CIN XC61F Series RIN XC61FC Series RIN X IOUT IOUT VIN Voltage drop VOUT VSS RL 2 Diagram 2. Oscillation in relation to output current RIN XC61FC Series XC61FN Series RIN X IOUT Voltage drop VIN VOUT VSS ISS* (includes through current) Diagram 3. Oscillation in relation to through current 165 XC61F Seires ■Typical Performance Characteristics (1) SUPPLY CURRENT vs. INPUT VOLTAGE XC61FN1612 Ta=80℃ 2.0 -30℃ 1.0 25℃ 0 2 4 6 8 4.0 Supply Current: ISS (μA) 3.0 0.0 XC61FN3512 XC61FN2512 4.0 Supply Current: ISS (μA) 2 Supply Current: ISS (μA) 4.0 3.0 2.0 Ta=80℃ -30℃ 1.0 25℃ 0.0 10 0 Input Voltage: VIN (V) 2 4 6 8 3.0 2.0 25℃ 1.6 VDF 1.5 -20 0 20 40 60 6 8 10 XC61FN3512 2.7 VDR 2.6 VDF 2.5 2.4 2.3 -40 80 4 3.8 Detect, Release Voltage: VDF,VDR (V) VDR 2 Input Voltage: VIN (V) 2.8 Detect, Release Voltage: VDF,VDR (V) Detect, Release Voltage: VDF,VDR (V) 1.8 1.4 -40 0 Input Voltage: VIN (V) (2) DETECT VOLTAGE, RELEASE VOLTAGE vs. AMBIENT TEMPERATURE XC61FN2512 XC61FN1612 1.7 -30℃ 1.0 0.0 10 Ta=80℃ -20 0 20 40 60 80 3.7 VDR 3.6 3.5 VDF 3.4 3.3 3.2 -40 Ambient Temp.: Ta(℃) Ambient Temp.: Ta(℃) -20 0 20 40 60 80 Ambient Temp.: Ta(℃) (3) OUTPUT VOLTAGE vs. INPUT VOLTAGE 1.5 1.0 0.5 0.0 0 1 2 5 VIN-VOUT:100kΩ Ta=-30℃ 25℃ 80℃ 3 Output Voltage: VOUT (V) 2.0 Output Voltage: VOUT (V) Output Voltage: VOUT (V) 4 VIN-VOUT:100kΩ Ta=-30℃ 25℃ 80℃ 2.5 XC61FN3512 XC61FN2512 XC61FN1612 3.0 2 1 3 2 1 0 0 3 0 Input Voltage: VIN (V) 1 2 3 4 0 Input Voltage: VIN (V) 1400 VIN=1.5V 9 6 1.0V 3 1.0 1.5 2.0 1200 VIN =0.8V 1000 800 600 0.7V 400 200 0 0.2 3 4 5 XC61FN2512 0 0.5 VDS (V) 166 Output Current: IOUT (μA) Output Current: IOUT (mA) Ta=25℃ 12 2 30 Ta=25℃ Output Current: IOUT (mA) 15 1 Input Voltage: VIN (V) (4) N-CHANNEL DRIVER OUTPUT CURRENT vs. VDS XC61FN1612 XC61FN1612 0 0.0 VIN-VOUT:100kΩ Ta=-30℃ 25℃ 80℃ 4 0.4 0.6 VDS (V) 0.8 1.0 Ta=25℃ 25 VIN =2.0V 20 15 1.5V 10 5 0 0.0 0.5 1.0 1.5 VDS (V) 2.0 2.5 XC61F Series (4) N-CHANNEL DRIVER OUTPUT CURRENT vs. VDS XC61FN3512 XC61FN2512 XC61FN3512 1400 60 Ta=25℃ VIN =0.8V 800 600 0.7V 400 200 0 0.0 0.2 0.4 0.6 0.8 50 2.5V 40 30 2.0V 20 1.5V 10 0 0.0 1.0 VIN =3.0V Output Current: IOUT (μA) Ta=25℃ 1000 Output Current: IOUT (mA) Output Current: IOUT (μA) 1200 0.5 1.0 1.5 VDS (V) 2.0 2.5 3.0 Ta=25℃ 1200 VIN =0.8V 1000 800 0.7V 600 400 2 200 0 0.0 3.5 0.2 0.4 0.6 0.8 1.0 VDS (V) VDS (V) (5) N-CHANNEL DRIVER OUTPUT CURRENT vs. INPUT VOLTAGE 25 Output Current: IOUT (mA) 80℃ 25℃ 7.5 5.0 2.5 0.0 0.0 0.5 1.0 Ta=-30℃ VDS=0.5V Ta=-30℃ 12.5 10.0 40 1.5 20 80℃ 25℃ 15 10 5 0 0.0 2.0 Output Current: IOUT (mA) VDS=0.5V Output Current: IOUT (mA) XC61FN3512 XC61FN2512 XC61FN1612 15.0 Input Voltage: VIN (V) 0.5 1.0 1.5 2.0 2.5 VDS=0.5V 35 Ta=-30℃ 30 80℃ 25 25℃ 20 15 10 5 0 3.0 0 Input Voltage: VIN (V) 1.0 2.0 3.0 4.0 Input Voltage: VIN (V) (6) P-CHANNEL DRIVER OUTPUT CURRENT vs. INPUT VOLTAGE XC61FC4412 XC61FC2712 20 Ta=25℃ 18 VDS =2.1V 16 14 1.5V 12 10 1.0V 8 6 0.5V 4 2 Output Current: IOUT (mA) Output Current: IOUT (mA) 20 0 Ta=25℃ 18 VDS =2.1V 16 14 1.5V 12 10 1.0V 8 6 0.5V 4 2 0 0.0 2.0 4.0 6.0 8.0 10.0 0.0 Input Voltage: VIN(V) 2.0 4.0 6.0 8.0 10.0 Input Voltage: VIN(V) (7) AMBIENT TEMPERATURE vs. TRANSIENT DELAY TIME XC61FC3052 XC61FC3042 XC61FC3012 400 200 50 40 100 TDLY (msec) TDLY (msec) TDLY (msec) 320 150 240 160 50 -30 -10 10 30 50 Ambient Temp.: Ta(℃) 70 80 -30 30 20 10 -10 10 30 50 Ambient Temp.: Ta(℃) 70 0 -30 -10 10 30 50 70 Ambient Temp.: Ta(℃) 167 XC61F Seires (8) INPUT vs. TRANSIENT DELAY TIME XC61FC2712 230 Ta=25℃ 2 TDLY(msec) 200 170 140 110 80 50 0.0 2.0 4.0 6.0 8.0 Input Voltage: VIN (V) 168 10.0