Composite Transistors XP05555 (XP5555) Silicon NPN epitaxial planer transistor Unit: mm For high speed switching 1 6 2 5 3 4 0 to 0.1 2SC4782 × 2 elements 0.12 –0.02 0.9±0.1 ● 0.7±0.1 ■ Basic Part Number of Element +0.05 0.2 ● Two elements incorporated into one package. Reduction of the mounting area and assembly cost by one half. 0.425 0.65 ● 2.0±0.1 ■ Features 1.25±0.1 0.65 0.425 0.2±0.05 2.1±0.1 ■ Absolute Maximum Ratings Parameter (Ta=25˚C) Symbol Ratings Unit Collector to base voltage VCBO 25 V Collector to emitter voltage Rating Emitter to base voltage of element Collector current VCES 20 V VEBO 5 V IC 200 mA Peak collector current ICP 300 mA Total power dissipation PT 150 mW Overall Junction temperature Tj 150 ˚C Tstg –55 to +150 ˚C Storage temperature 1 : Emitter (Tr1) 2 : Base (Tr1) 3 : Base (Tr2) Parameter *1 4 : Collector (Tr2) 5 : Emitter (Tr2) 6 : Collector (Tr1) EIAJ : SC–88 S–Mini Type Package (6–pin) Marking Symbol: EO Internal Connection 1 Tr1 6 5 2 3 ■ Electrical Characteristics 0.2±0.1 Tr2 4 (Ta=25˚C) Symbol Conditions min typ max Unit 0.1 µA 0.1 µA Collector cutoff current ICBO VCB = 10V, IE = 0 Emitter cutoff current IEBO VEB = 4V, IC = 0 Forward current transfer ratio hFE VCE = 1V, IC = 10mA Collector to emitter saturation voltage VCE(sat) IC = 10mA, IB = 1mA 0.17 0.25 V Base to emitter saturation voltage VBE(sat) IC = 10mA, IB = 1mA 0.76 1.0 V Transition frequency fT VCB = 10V, IE = –10mA, f = 200MHz 200 500 MHz Collector output capacitance Cob VCB = 10V, IE = 0, f = 1MHz 2 4 pF Turn-on time ton Turn-off time toff Storage time tstg *1 40 200 17 ns 15 ns 7 ns Switching time measuring circuit Note.) The Part number in the Parenthesis shows conventional part number. 1 Composite Transistors XP05555 Switching time measuring circuit ton, toff Test Circuit tstg Test Circuit 0.1µF 0.1µF Vout 220Ω Vin=10V A 50Ω 3.3kΩ 0.1µF Vin=10V 3.3kΩ Vcc=3V 50Ω 1kΩ 90Ω 910Ω 500Ω 500Ω Vcc=10V 50Ω Vbb=–3V Vout Vbb=2V Wave form at A 10% Vin 90% Vout 10% Vin 10% Vout 90% ton 10% toff tstg PT — Ta IC — VCE 250 VCE(sat) — IC 10 200 200 Collector current IC (mA) 150 100 50 160 IB=3.0mA 120 2.5mA 2.0mA 1.5mA 80 1.0mA 40 0.5mA 0 0 20 40 60 0 Ambient temperature Ta (˚C) Ta=–25˚C 75˚C 0.1 0.01 100 Collector current IC (mA) 2 0.4 0.6 0.8 1.0 –25˚C 0.1 25˚C 0.01 1 1.2 1000 100 200 Ta=75˚C 150 25˚C –25˚C 100 1000 Cob — VCB 6 250 50 0 0.1 10 Collector current IC (mA) VCE=1V Forward current transfer ratio hFE Base to emitter saturation voltage VBE(sat) (V) 25˚C 10 Ta=75˚C hFE — IC 10 1 0.2 300 IC/IB=10 1 1 Collector to emitter voltage VCE (V) VBE(sat) — IC 100 IC/IB=10 0.001 0 80 100 120 140 160 Collector output capacitance Cob (pF) Total power dissipation PT (mW) Ta=25˚C Collector to emitter saturation voltage VCE(sat) (V) 240 f=1MHz IE=0 Ta=25˚C 5 4 3 2 1 0 1 10 Collector current IC (mA) 100 1 10 100 Collector to base voltage VCB (V) Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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