STMICROELECTRONICS Z0410NE

Z0410xE/F

STANDARD TRIACS
FEATURES
IT(RMS) = 4A
VDRM = 400V to 800V
IGT ≤ 25mA
A1
A2
A1
A2
G
G
DESCRIPTION
The Z0410xE/F series of triacs uses a high
performance TOP GLASS PNPN technology.
These parts are intended for general purpose
switching and phase control applications.
TO202-1
(Plastic)
TO202-2
(Plastic)
Z0410xE
Z0410xF
ABSOLUTE RATINGS (limiting values)
Symbol
IT(RMS)
ITSM
I2 t
dI/dt
Tstg
Tj
Tl
Symbol
VDRM
VRRM
January 1995
Parameter
Value
Unit
A
Z0410xE/F
Tc= 75 °C
4
Z0410xF
Ta= 25 °C
0.95
Non repetitive surge peak on-state current
(Tj initial = 25°C )
tp = 8.3 ms
22
tp = 10 ms
20
I2t Value for fusing
tp = 10 ms
2
A2s
Critical rate of rise of on-state current
diG /dt = 0.1 A/µs.
IG = 50 mA
Repetitive
F = 50 Hz
10
A/µs
Non
Repetitive
50
RMS on-state current
(360° conduction angle)
Storage and operating junction temperature range
Maximum lead temperature for soldering during 10s at
4.5mm from case
- 40, + 150
- 40, + 125
°C
260
°C
Voltage
Parameter
Repetitive peak off-state voltage
Tj = 125°C
A
Unit
D
M
S
N
400
600
700
800
V
1/6
Z0410xE/F
THERMAL RESISTANCES
Symbol
Rth(j-a)
Parameter
Junction to ambient
Value
Unit
Z0410xE
80
°C/W
Z0410xF
100
Rth(j-c)
Junction to case for D.C
10
°C/W
Rth(j-c)
Junction to case for A.C 360° conduction angle (F=50Hz)
7.5
°C/W
GATE CHARACTERISTICS (maximum values)
PG (AV)= 0.2 W PGM = 3 W (tp = 20 µs)
IGM = 1.2 A (tp = 20 µs)
ELECTRICAL CHARACTERISTICS
Symbol
Test Conditions
Sensitivity
Quadrant
Unit
10
IGT
VD=12V (DC) RL=33Ω
Tj= 25°C
I-II-III-IV
MAX
25
mA
VGT
VD=12V (DC) RL=33Ω
Tj= 25°C
I-II-III-IV
MAX
1.5
V
VGD
VD=VDRM RL=3.3kΩ
Tj= 125°C
I-II-III-IV
MIN
0.2
V
tgt
VD=VDRM IG = 40mA
IT = 5.5A
dIG/dt = 0.5A/µs
Tj= 25°C
I-II-III-IV
TYP
2
µs
IH *
IT= 50 mA Gate open
Tj= 25°C
MAX
25
mA
IG= 1.2 IGT
Tj= 25°C
I-III-IV
TYP
25
mA
II
TYP
50
IL
VTM *
ITM= 5.5A tp= 380µs
Tj= 25°C
MAX
2
V
IDRM
IRRM
VD = VDRM
VR = VRRM
Tj= 25°C
MAX
5
µA
Tj= 110°C
MAX
200
Tj= 110°C
MIN
200
TYP
400
MIN
5
dV/dt *
(dV/dt)c *
VD=67%VDRM
Gate open
(dI/dt)c = 1.8 A/ms
Tj= 110°C
V/µs
V/µs
* For either polarity of electrode A2 voltage with reference to electrode A1
ORDERING INFORMATION
Z
04
10
M
E
PACKAGES :
E=TO202-1 F=TO202-2
TRIAC TOP GLASS
CURRENT
SENSITIVITY
2/6

VOLTAGE
Z0410xE/F
Fig.1 : Maximum RMS power dissipation versus
RMS on-state current.
Fig.2 : Correlation between maximum RMS power
dissipation and maximum allowable temperature
(Tamb and Tcase) for different thermal resistances
heatsink + contact (TO202-1).
Tcase (o C)
P (W)
P(W)
7
180
7
O
6
6
o
5
5
= 120
o
4
4
= 90
o
3
= 60
3
2
o
2
= 30
Rth = 0 o C/W
o
5 C/W
o
10 C/W
15 o C/W
o
= 180
1
I
0
0
1
2
T(RMS)
-105
-115
o
Tamb ( C)
3
4
Fig.3 : Maximum RMS power dissipation versus
RMS on-state current.
0
0
20
40
60
80
100
120
Tcase (o C)
P (W)
180
7
O
o
= 180
6
-75
6
Rth(j-c)
o
5
-125
140
Fig.4 : Correlation between maximum RMS power
dissipation and maximum allowable temperature
(Tamb and Tcase) (TO202-2).
P(W)
7
-85
-95
1
(A)
-75
= 120
5
-85
4
-95
o
4
= 90
o
3
= 60
2
o
= 30
3
-105
2
1
I
T(RMS)
(A)
o
0
0
1
2
3
4
Fig.5 : RMS on-state current versus case temperature (TO202-1).
I T(RMS) (A)
0
0
Tamb ( C)
20
40
60
80
100
120
-125
140
Fig.6 : RMS on-state current versus case temperature (TO202-2).
I T(RMS) (A)
5
1
4
0.8
3
0.6
= 180
o
= 180
o
0.4
2
1
0.2
o
Tcase( C)
0
0
-115
Rth(j-a)
1
Tamb(oC)
10 20 30 40 50 60 70 80 90 100 110 120 130
0
0
10 20 30 40 50 60 70 80 90 100 110 120 130
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
Z0410xE/F
Fig.6 : Relative variation of thermal impedance
versus pulse duration (TO202-1).
Fig.7 : Relative variation of thermal impedance
junction to ambient versus pulse duration
(TO202-2).
Zth/Rth
Zth(j-a)/Rth(j-a)
1.00
1.00
Zth (j-c)
Zt h( j-a)
0.10
0.10
tp(s)
0.01
1E-3
1E-2
1E-1
1 E +0
1 E +1
tp (s)
1E +2 5E +2
Fig.9 : Relative variation of gate trigger current and
holding current versus junction temperature.
Igt[Tj]
o
Igt[Tj=25 C]
Ih[Tj]
Ih[Tj=25 o C]
1E-2
1E-1
1 E+0
1 E+1
1 E +2 5 E+2
Fig.10 : Non repetitive surge peak on-state current
versus number of cycles.
20
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.01
1E-3
ITSM(A)
o
Tj initial = 25 C
15
Igt
10
Ih
5
Number of cycles
Tj(oC)
-40
-20
0
20
40
60
80
100
120 140
Fig.11 : Non repetitive surge peak on-state current for a sinusoidal pulse with width : tp ≤ 10ms,
and corresponding value of I2t.
I TSM (A). I2 t (A2 s)
0
1
100
1000
Fig.12 : On-state characteristics (maximum values).
100
100
10
I TM (A)
Tj initial = 25oC
I
Tj initial
o
25 C
10
TSM
10
Tj max
Tj max
Vto =0.98V
Rt =0.180
1
I2 t
VTM (V)
tp (ms)
1
1
10
4/6

0.1
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
Z0410xE/F
PACKAGE MECHANICAL DATA
TO202-1 (Plastic)
REF.
DIMENSIONS
Millimeters
Inches
Typ. Min. Max. Typ. Min. Max.
A
A
H
G
J
I
B
C
M
O
F
P
D
N1
N
10.1
0.398
B
13.7
0.540
C
D
7.3
10.5
0.287
0.413
F
G
3.2
0.126
H
I
0.51
0.020
J
1.5
0.059
M
N
4.5
0.177
N1
2.54
O
P
1.5
3.16
0.059
3.20
0.124 0.126
5.3
0.209
0.100
1.4
0.7
0.055
0.028
Marking : type number
Weight : 1.4 g
5/6

Z0410xE/F
PACKAGE MECHANICAL DATA
TO202-2 (Plastic)
DIMENSIONS
REF.
A
A
H
E
B
J
C
M
O
F
P
Millimeters
Inches
Typ. Min. Max. Typ. Min. Max.
D
N1
10.1
B
C
1.2
7.3
0.047
0.287
D
10.5
0.413
E
F
7.4
H
0.51
0.020
J
M
1.5
4.5
0.059
0.177
N1
O
P
0.290
1.5
N
N
0.398
0.059
5.3
2.54
0.209
0.100
1.4
0.055
0.7
0.028
Marking : type number
Weight : 1.0 g
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THO MSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectronics.
 1995 SGS-THOMSON Microelectronics - All rights reserved.
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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