Product specification ZXM61P02F 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits • • • • • • • ID RDS(on) V(BR)DSS TA = 25°C 600mΩ @ VGS = -4.5V -0.92A 900mΩ @ VGS = -2.7V -0.75A -20V Description and Applications This MOSFET utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed, making it ideal for high-efficiency power management applications. • • • • Mechanical Data • • • • DC - DC converters Power management functions Disconnect switches Motor control Fast switching speed Low on-resistance Low threshold Low gate drive “Lead Free”, RoHS Compliant (Note 1) Halogen and Antimony Free. "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability • Case: SOT23 Case Material: Molded Plastic, UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish; Solderable per MIL-STD-202, Method 208 Weight: 0.008 grams (approximate) SOT23 D S G D G Top View S Equivalent Circuit Top View Pin Out Ordering Information (Note 3) Product ZXM61P02FTA Notes: Marking P02 Reel size (inches) 7 Tape width (mm) 8 Quantity per reel 3000 Units 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free. 2. Diodes Inc’s “Green” Policy can be found on our website at http://www.twtysemi.com 3. For packaging details, go to our website at http://www.twtysemi.com Marking Information P02 http://www.twtysemi.com P02 = Product Type Marking Code [email protected] 1 of 3 Product specification ZXM61P02F Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol VDSS VGS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current VGS = 4.5V TA = 25°C (Note 5) TA = 70°C (Note 5) ID Pulsed Drain Current (Note 6) Continuous Source Current (Body Diode) (Note 5) Pulsed Source Current (Body Diode) (Note 6) IDM IS ISM Value -20 ±12 -0.9 -0.7 -4.9 -0.9 -4.9 Units V V Value 625 5 806 6.4 200 155 -55 to +150 Unit mW mW/°C mW mW/°C °C/W °C/W °C A A A A Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Power Dissipation (Note 4) Linear Derating Factor Power Dissipation (Note 5) Linear Derating Factor Thermal Resistance, Junction to Ambient (Note 4) Thermal Resistance, Junction to Ambient (Note 5) Operating and Storage Temperature Range Notes: Symbol PD PD RθJA RθJA TJ, TSTG 4. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions 5. For a device surface mounted on FR4 PCB measured at t ≤5 secs. 6. Repetitive rating 25mm x 25mm FR4 PCB, D=0.05 pulse width=10μs - pulse current limited by maximum junction temperature. http://www.twtysemi.com [email protected] 2 of 3 Product specification ZXM61P02F Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS -20 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ -0.1 ±100 V μA nA ID = -250μA, VGS = 0V VDS = -20V, VGS = 0V VGS = ±12V, VDS = 0V VGS(th) -0.7 ⎯ V Static Drain-Source On-Resistance (Note 7) RDS (ON) ⎯ ⎯ Forward Transconductance (Notes 7 and 9) Diode Forward Voltage (Note 7) Reverse Recovery Time (Note 9) Reverse Recovery Charge (Note 9) DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time (Note 8) Turn-On Rise Time (Note 8) Turn-Off Delay Time (Note 8) Turn-Off Fall Time (Note 8) Total Gate Charge (Note 8) Gate-Source Charge (Note 8) Gate-Drain Charge (Note 8) gfs VSD trr Qrr 0.56 ⎯ ⎯ ⎯ ⎯ ⎯ 14.9 5.6 ⎯ 0.6 0.9 ⎯ -0.95 ⎯ ⎯ ID = -250μA, VDS = VGS VGS = -4.5V, ID = -0.61A VGS = -2.7V, ID = -0.31A VDS = -10V, ID = -0.31A TJ = 25°C, IS = -0.61A, VGS = 0V TJ = 25°C, IF = -0.61A, di/dt = 100A/μs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 150 70 30 2.9 6.7 11.2 10.1 3.5 0.5 1.5 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Notes: Ω S V ns nC Test Condition pF VDS = -15V, VGS = 0V f = 1.0MHz ns VDD = -110V, ID = -0.93A, RG ≅ 6.2Ω, RD ≅ 11Ω, nC VDS = -16V, VGS = -4.5V, ID = -0.61A 7. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤ 2%. 8. Switching characteristics are independent of operating junction temperature. 9. For design aid only, not subject to production testing. http://www.twtysemi.com [email protected] 3 of 3