4AC12 Silicon NPN Epitaxial Application Low frequency power amplifier Outline SP-10 3 2 5 4 ID 1 1 10 6 7 9 8 ID 1, 10 Emitter 2, 4, 6, 8 Base 3, 5, 7, 9 Collector ID ID 10 4AC12 Absolute Maximum Ratings (for each device, Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 27 V Collector to emitter voltage VCEO 27 V Emitter to base voltage VEBO 7 V Collector current IC 2 A Collector peak current I C(peak) 4 A Diode current ID 2 A 1 4 W 1 PC * (TC = 25°C) 28 Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Collector power dissipation Note: PC * 1. 4 devices operation. Electrical Characteristics (for each device, Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to emitter breakdown V(BR)CBO voltage 27 — — V I C = 1 mA, IE = 0 Collector to emitter sustain voltage VCEO(SUS) 28 — 36 V I C = 1 A, L = 20 mH, RBE = ∞ Emitter to base breakdown voltage V(BR)EBO 7 — — V I E = 5 mA, IC = 0 Collector cutoff current I CBO — — 10 µA VCB = 20 V, IE = 0 I CEO — — 10 VCE = 20 V, RBE = ∞ hFE 7000 — 30000 VCE = 2 V, IC = 0.5 A hFE 2000 — — VCE = 2 V, IC = 2 A*1 Collector to emitter saturation voltage VCE(sat) — — 1.5 V I C = 2 A, IB = 2 mA*1 Base to emitter saturation voltage VBE(sat) — — 2.0 V I C = 2 A, IB = 2 mA*1 C to E diode forward current VD — — 3.5 V ID = 2 A DC current transfer ratio Note: 2 1. Pulse test. 4AC12 Maximum Collector Dissipation Curve 4 device operation Maximum Collector Dissipation Curve 30 3 device operation 4 2 device operation 1 device operation 2 50 100 Ambient temperature Ta (°C) 150 4 device operation 3 device operation 20 2 device operation 10 1 device operation 0 Note: Collector power dissipation of each devices is identical. 50 100 Case temperature TC (°C) Area of Safe Operation 2.0 s = 10 DC (T Op e C = 25 ratio °C n ) ms 1.0 0.3 0.1 0.03 Collector current IC (A) 1m IC(max) PW Collector current IC (A) iC(peak) 3.0 1.6 1.0 2 5 10 20 50 Collector to emitter voltage VCE (V) 80 70 60 50 40 1.2 0.8 30 µA 0.4 Ta = 25°C 1 shot pulse 0.01 0.5 150 Typical Output Characteristics 10 90 0 Collector power dissipation PC (W) Collector power dissipation PC (W) 6 IB = 0 TC = 25°C 0 1 2 3 4 5 Collector to emitter voltage VCE (V) 3 4AC12 Collector to emitter saturation voltage VCE(sat) (V) DC Current Transfer Ratio vs. Collector Current DC current transfer ratio hFE 100,000 30,000 5°C 7 a= 10,000 T 3,000 1,000 25°C –25°C 300 VCE = 2 V 100 0.03 0.3 0.1 1.0 Collector current IC (A) 3.0 4 3.0 10 3 Ta = –25°C 25°C 75°C 1.0 0.3 IC = 1000 IB 0.1 0.03 0.1 0.3 1.0 Collector current IC (A) Typical Transfer Characteristics 10 2.0 Ta = –25°C 25°C Collector current IC (A) Base to emitter saturation voltage VBE(sat) (V) Base to Emitter Saturatiion Voltage vs. Collector Current Collector to Emitter Saturatiion Voltage vs. Collector Current 75°C 1.0 0.3 1.6 VCE = 2 V Ta = 75°C 1.2 0.8 25°C –25°C 0.4 IC = 1000 IB 0.1 0.03 0.3 0.1 1.0 Collector current IC (A) 3.0 0 1.2 1.6 2.0 0.4 0.8 Base to emitter voltage VBE (V) 3.0 4AC12 Transient Thermal Resistance Zener Voltage vs. Case Temperature Thermal resistance θj-c (°C/W) 50 40 30 20 10 25 50 75 100 Case temperature TC (°C) 0s s 0m to 1 1 1.0 10 0.1 s to µ 10 ms TC = 25°C IC = 1 mA 0.02 0.01 0.1 0.01 0.1 125 1.0 10 (s) 1.0 10 (ms) Time t 26.5 ± 0.3 10.0 ± 0.3 4.0 ± 0.2 1 1.82 2.54 1 2 3 4 1.4 5 6 10 0.55 1.2 7 8 9 1.5 ± 0.2 10.5 ± 0.5 0 10 2.5 Zener voltage VZ (V) 60 0.55 ± 0.1 10 Pin No. 1 2 3 4 5 6 7 8 9 10 Electrode E B C B C B C B C E Note: B: Base C: Collector E: Emitter 5 Unit: mm 26.5 ± 0.3 1.82 2.54 1 2 3 4 0.55 ± 0.1 1.4 5 6 7 10.5 ± 0.5 2.5 10.0 ± 0.3 4.0 ± 0.2 8 9 1.5 ± 0.2 +0.1 0.55 –0.06 10 Hitachi Code JEDEC EIAJ Weight (reference value) SP-10 — — 2.9 g Cautions 1. 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