6HP04CH Ordering number : ENA1039 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET 6HP04CH General-Purpose Switching Device Applications Features • 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Symbol Conditions Ratings Unit VDSS VGSS --60 ±20 V ID --120 mA --480 mA Drain Current (Pulse) IDP PW≤10μs, duty cycle≤1% Allowable Power Dissipation PD When mounted on ceramic substrate (900mm2✕0.8mm) 1unit Channel Temperature Storage Temperature V 0.6 W Tch 150 °C Tstg --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Symbol V(BR)DSS IDSS Conditions ID=--1mA, VGS=0V Ratings min typ Unit max --60 V VDS=--60V, VGS=0V --1 μA ±10 μA IGSS VGS(off) VGS=±16V, VDS=0V VDS=--10V, ID=--100μA --1.2 ⏐yfs⏐ RDS(on)1 VDS=--10V, ID=--60mA 100 ID=--60mA, VGS=--10V 5.1 6.6 RDS(on)2 Ciss ID=--30mA, VGS=--4V 6.8 9.6 VDS=--20V, f=1MHz 13.5 pF Output Capacitance Coss VDS=--20V, f=1MHz 3.4 pF Reverse Transfer Capacitance Crss VDS=--20V, f=1MHz 1.3 pF Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Marking : YZ --2.6 180 V mS Ω Ω Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 20608PE TI IM TC-00001164 No. A1039-1/4 6HP04CH Continued from preceding page. Parameter Symbol Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Ratings Conditions min typ td(on) tr See specified Test Circuit. 36.5 ns See specified Test Circuit. 38 ns td(off) tf See specified Test Circuit. 455 ns See specified Test Circuit. 160 ns 1.6 nC 0.4 nC Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd VDS=--30V, VGS=--10V, ID=--120mA VDS=--30V, VGS=--10V, ID=--120mA VDS=--30V, VGS=--10V, ID=--120mA Diode Forward Voltage VSD IS=--120mA, VGS=0V Package Dimensions 0.16 --1.2 V Switching Time Test Circuit VDD= --30V VIN 0V --10V 0.6 2.9 0.15 ID= --60mA RL=500Ω VOUT VIN 3 0.2 D PW=10μs D.C.≤1% 0.05 1.6 2.8 nC --0.85 unit : mm (typ) 7015A-004 Rg G 1 0.6 Unit max 2 0.95 1 : Gate 2 : Source 3 : Drain 6HP04CH P.G 50Ω S 0.9 0.2 0.4 SANYO : CPH3 Rg=5kΩ ID -- VDS V 0V . --3 --4 .0 .0V --8 . --40 --20 --60 --40 Ta= 7 --20 25°C --25°C V --2.5 V GS= --60 --80 5°C --5 Drain Current, ID -- mA .0V .0V -10 --80 VDS= --10V --100 --1 5 Drain Current, ID -- mA --100 ID -- VGS --120 0V --120 0 0 0 --0.2 --0.4 --0.6 --0.8 Drain-to-Source Voltage, VDS -- V --1.0 0 --1.0 --1.5 --2.0 --2.5 --3.0 Gate-to-Source Voltage, VGS -- V RDS(on) -- VGS 14 --0.5 IT10865 --3.5 IT10866 RDS(on) -- Ta 14 12 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Ta=25°C --60mA 10 8 6 ID= --30mA 4 2 0 0 --2 --4 --6 --8 --10 --12 --14 --16 Gate-to-Source Voltage, VGS -- V --18 --20 IT10867 12 10 mA --30 = , ID mA --4V --60 = = I V GS V, D --10 = V GS 8 6 4 2 0 --60 --40 --20 0 20 40 60 80 100 Ambient Temperature, Ta -- °C 120 140 160 IT10868 No. A1039-2/4 6HP04CH ⏐yfs⏐ -- ID C 5° 100 = Ta 7 --2 °C 25 C 5° 7 5 3 2 10 --1.0 2 3 5 7 --10 2 3 5 7 --100 2 Drain Current, ID -- mA 5 --1.0 --1.2 --1.4 IT10870 f=1MHz Ciss, Coss, Crss -- pF Ciss 100 7 tr 10 7 5 Coss 3 2 Crss td(on) 3 1.0 7 2 3 5 7 2 --0.1 3 Drain Current, ID -- A 5 7 0 --10 --15 --20 --1.0 7 5 Drain Current, ID -- A 2 --6 --5 --4 IDP= --480mA PW≤10μs 1 1m 00μs 10 s m s 10 0m s ID= --120mA --0.1 7 5 DC era tio n( 2 --2 3 2 --1 0 0 0.2 0.4 0.6 0.8 1.0 1.2 Total Gate Charge, Qg -- nC 1.4 1.6 IT10873 PD -- Ta 0.7 op 3 Operation in this area is limited by RDS(on). --0.01 7 5 --3 --30 IT10872 ASO 3 --8 --7 --25 Drain-to-Source Voltage, VDS -- V VDS= --30V ID= --120mA --9 --5 IT10871 VGS -- Qg --10 Gate-to-Source Voltage, VGS -- V --0.8 2 tf 2 --0.01 Allowable Power Dissipation, PD -- W --0.6 Ciss, Coss, Crss -- VDS 3 3 5 --0.4 Diode Forward Voltage, VSD -- V VDD= --30V VGS= --10V td(off) 2 --1.0 7 5 3 2 IT10869 7 5 --10 7 5 3 2 --0.1 --0.2 7 SW Time -- ID 1000 Switching Time, SW Time -- ns 3 --100 7 5 3 2 25°C --25°C 2 °C 3 VGS=0V Ta=7 5 5 IS -- VSD --1000 7 5 3 2 VDS= --10V Source Current, IS -- mA Forward Transfer Admittance, ⏐yfs⏐ -- mS 7 Ta = 25 °C ) Ta=25°C Single pulse When mounted on ceramic substrate (900mm2✕0.8mm) 1unit --0.001 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 Drain-to-Source Voltage, VDS -- V 5 7 --100 IT13268 When mounted on ceramic substrate (900mm2✕0.8mm) 1unit 0.6 0.5 0.4 0.3 0.2 0.1 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT13269 No. A1039-3/4 6HP04CH Note on usage : Since the 6HP04CH is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of February, 2008. Specifications and information herein are subject to change without notice. PS No. A1039-4/4