NELLSEMI 6T10AF-CW

RoHS
6T Series RoHS
SEMICONDUCTOR
TRIACs, 6A
Snubberless, Logic Level and Standard
MAIN FEATURES
2
SYMBOL
VALUE
UNIT
I T(RMS)
6
A
2
2
1
V DRM /V RRM
600 to 1000
V
I GT(Q1)
5 to 50
mA
1
2
3
3
TO-251 (I-PAK)
(6TxxF)
TO-252 (D-PAK)
(6TxxG)
DESCRIPTION
The 6T triac series is suitable for general purpose AC
switching. They can be used as an ON/OFF function in
applications such as static relays, heating regulation,
induction motor starting circuits... or for phase control
operation in light dimmers, motor speed controllers,...
The snubberless and logic level versions are specially
recommended for use on inductive loads, thanks to their
high commutation performances.
A2
1
A1
A2
G
TO-220AB (non-Insulated)
(6TxxA)
2
3
TO-220AB (lnsulated)
(6TxxAI)
By using an internal ceramic pad, the 6T series provides
voltage insulated tab (rated at 2500V RMS ) complying
with UL standards (File ref. :E320098)
ABSOLUTE MAXIMUM RATINGS
PARAMETER
RMS on-state current (full sine wave)
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25°C)
SYMBOL
IT(RMS)
ITSM
TEST CONDITIONS
Tc = 105ºC
F =50 Hz
t = 20 ms
60
F =60 Hz
t = 16.7 ms
63
Critical rate of rise of on-state current
IG = 2xlGT, tr≤100ns
dI/dt
F =100 Hz
Peak gate current
IGM
T p =20 µs
PG(AV)
T j =125ºC
Operating junction temperature range
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A
TO-220AB insulated
t p = 10 ms
Storage temperature range
6
Tc = 110ºC
2
Average gate power dissipation
UNIT
TO-251/TO-252/TO-220AB
I t
I2t Value for fusing
VALUE
A
21
A2s
T j =125ºC
50
A/µs
T j =125ºC
4
A
1
W
Tstg
- 40 to + 150
Tj
- 40 to + 125
ºC
Page 1 of 6
RoHS
6T Series RoHS
SEMICONDUCTOR
ELECTRICAL CHARACTERISTICS (TJ= 25 ºC unless otherwise specified)
SNUBBERLESS and Logic level (3 quadrants)
6Txxxx
SYMBOL
IGT(1)
QUADRANT
TEST CONDITIONS
V D = V DRM , R L = 3.3KΩ
T j = 125°C
IH(2)
I T = 200 mA
IL
I G = 1.2 I GT
(dI/dt)c(2)
CW
BW
05
10
35
50
I - II - III
MAX.
I - II - III
MAX.
1.3
V
I - II - III
MIN.
0.2
V
MAX.
I - III
dV/dt(2)
SW
mA
V D = 12 V, R L = 30Ω
VGT
VGD
Unit
TW
10
15
40
55
10
25
50
70
15
30
60
80
20
40
400
1000
2.7
3.5
-
-
1.2
2.4
-
-
-
-
3.5
5.3
mA
MAX.
II
V D = 67% V DRM , gate open ,T j = 125°C
MIN.
(dV/dt)c = 0.1 V/µs
T j = 125°C
(dV/dt)c = 10 V/µs
T j = 125°C
Without snubber
T j = 125°C
MIN.
mA
V/µs
A/ms
ELECTRICAL CHARACTERISTICS (TJ= 25 ºC unless otherwise specified)
Standard (4 quadrants)
6Txxxx
TEST CONDITIONS
SYMBOL
IGT(1)
QUADRANT
I - II - III
V D = 12 V, R L = 30Ω
C
MAX.
IV
VGT
VGD
V D = V DRM , R L = 3.3KΩ, T j = 125°C
IH(2)
I T = 200 mA
IL
I G = 1.2 I GT
(dV/dt)c(2)
25
50
50
100
UNIT
mA
ALL
1.3
V
ALL
0.2
V
MAX.
I - III - IV
MAX.
II
dV/dt(2)
B
25
50
40
50
80
100
mA
mA
V D = 67% V DRM , gate open, T j = 125°C
MIN.
200
400
V/µs
(dI/dt)c = 2.7 A/ms, T j = 125°C
MIN.
5
10
V/µs
STATIC CHARACTERISTICS
SYMBOL
VTM(2)
TEST CONDITIONS
VALUE
UNIT
MAX.
1.55
V
T j = 125°C
MAX.
0.85
V
T j = 125°C
MAX.
60
mΩ
5
µA
1
mA
I TM = 8.5 A, t P = 380 µs
T j = 25°C
Threshold voltage
R d (2)
Dynamic resistance
IDRM
IRRM
VDRM = VRRM
Vt0
(2)
T j = 25°C
MAX.
T j = 125°C
Note 1: Minimum lGT is guaranted at 5% of lGT max.
Note 2: For both polarities of A2 referenced to A1.
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Page 2 of 6
RoHS
6T Series RoHS
SEMICONDUCTOR
THERMAL RESISTANCE
SYMBOL
Rth(j-c)
Junction to case (AC)
Rth(j-a)
Junction to ambient
VALUE
UNIT
1.8
2.7
°C/W
60
°C/W
TO-220AB, TO-251, TO-252
TO-220AB Insulated
TO-220AB, TO-251, TO-252
TO-220AB Insulated
PRODUCT SELECTOR
VOLTAGE (x x)
PART NUMBER
SENSITIVITY
TYPE
PACKAGE
V
50 mA
Standard
TO-220AB
V
V
50 mA
Snubberless
TO-220AB
V
V
V
25 mA
Standard
TO-220AB
6TxxA-CW/6TxxAl-CW
V
V
V
35 mA
Snubberless
TO-220AB
6TxxA-SW/6TxxAl-SW
V
V
V
10 mA
Logic level
TO-220AB
6TxxA-TW/6TxxAI-TW
V
V
V
5 mA
Logic level
TO-220AB
6TxxF-BW
V
V
V
50 mA
Snubberless
I-PAK
6TxxG-BW
V
V
V
50 mA
Snubberless
D-PAK
6TxxF-CW
V
V
V
35 mA
Snubberless
I-PAK
6TxxG-CW
V
V
V
35 mA
Snubberless
D-PAK
6TxxF-SW
V
V
V
10 mA
Logic level
I-PAK
6TxxG-SW
V
V
V
10 mA
Logic level
D-PAK
6TxxF-B
V
V
V
50 mA
Standard
I-PAK
6TxxG-B
V
V
V
50 mA
Standard
D-PAK
6TxxF-C
V
V
V
25 mA
Standard
I-PAK
6TxxG-C
V
V
V
25 mA
Standard
D-PAK
600 V
800 V
1000 V
6TxxA-B/ 6TxxAl-B
V
V
6TxxA-BW/6TxxAl-BW
V
6TxxA-C/6TxxAl-C
ORDERING INFORMATION
ORDERING TYPE
MARKING
PACKAGE
WEIGHT
BASE Q,TY
DELIVERY MODE
6TxxA-yy
6TxxA-yy
TO-220AB
2.0g
50
Tube
6TxxAI-yy
6TxxAI-yy
TO-220AB (insulated)
2.3g
50
Tube
6TxxF-yy
6TxxF-yy
TO-251(I-PAK)
0.40g
80
Tube
6TxxG-yy
6TxxG-yy
TO-252(D-PAK)
0.38g
80
Tube
Note: xx = voltage, yy = sensitivity
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Page 3 of 6
RoHS
6T Series RoHS
SEMICONDUCTOR
ORDERING INFORMATION SCHEME
A - BW
T 06
6
Current
6 = 6A
Triac series
Voltage
06 = 600V
08 = 800V
10 = 1000V
Package type
A = TO-220AB (non-insulated)
AI = TO-220AB ( insulated)
AF= TO-220F(ISOWAT TO-220AB, insulated)
F = TO-251 (I-PAK)
G = TO-252 (D-PAK)
IGT Sensitivity
B = 50mA Standard
C = 25mA Standard
SW = 10mA Logic Level
BW = 50mA Snubberless
CW = 35mA Snubberless
TW = 5mA Logic Level
Fig.1 Maximum power dissipation versus RMS on-state
current (full cycle)
Fig.2 RMS on-state current versus case temperature
(full cycle)
P(W)
IT(RMS)(A)
8
7
7
6
6
5
5
TO-220AB
(Insulated)
4
4
3
TO-251/TO-252
TO-220AB
3
2
2
1
1
TC(°C)
IT(RMS)(A)
0
0
0
1
2
3
4
5
6
0
25
50
75
100
125
Fig.4 On-state characteristics (maximum values).
Fig.3 Relative variation of thermal impedance
versus pulse duration.
ITM(A)
K=[Zth /Rth]
100
1E+0
Tj = Tj max.
Tj max.
Vt0 = 0.85V
Rd = 60 mΩ
Zth(j-c)
Zth(j-a)
10
1E-1
tp(s)
VTM(V)
1E-2
1
1E-3
1E-2
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1E-1
1E+0
1E+1
1E+2
5E+2
Page 4 of 6
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
RoHS
6T Series RoHS
SEMICONDUCTOR
Fig.5 Surge peak on-state current versus number
of cycles.
Fig.6 Non-repetitive surge peak on-state current
for a sinusoidal pulse with width tp < 10ms.
and corresponding value of l 2 t.
ITSM(A)
2
2
ITSM(A), I t (A s)
70
1000
Tj initial=25°C
60
t=20ms
50
One cycle
dI/dt limitation:
50A/µs
Non repetitive
Tj initial=25°C
40
ITSM
100
30
Repetitive
Tc =105°C
20
I2t
10
Number of cycles
0
tp(ms)
10
1
10
100
1000
0.01
IGT,IH,IL [Tj ] / IGT,IH,IL [Tj =25 °C ]
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
2.0
IGT
1.5
IH& IL
1.0
0.5
Tj(°C)
0.0
0
20
40
60
10.00
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
2.5
-20
1.00
Fig.8 Relative variation of critical rate of decrease
of main current versus (dV/dt)c (typical values).
Snubberless & Logic Level Types
Fig.7 Relative variation of gate trigger current,holding
current and latching current versus junction
temperature (typical values).
-40
0.10
80
100
120
TW
BW/CW
SW
(dV/dt)c (V/µs)
0.1
140
Fig.9 Relative variation of critical rate of decrease
of main current versus (dV/dt)C (typical values)
(Standard types).
1.0
10.0
100.0
Fig.10 Relative variation of critical rate decrease of
main current versus junction temperature .
(dI/dt)c [Tj ] / (dI/dt)c [T j specified]
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
6
2.0
1.8
5
1.6
C
1.4
4
1.2
B
3
1.0
0.8
2
0.6
0.4
1
0.2
(dV/dt)c (V/µs)
Tj(°C)
0.0
0
0.1
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1.0
10.0
100.0
Page 5 of 6
0
25
50
75
100
125
RoHS
6T Series RoHS
SEMICONDUCTOR
Case Style
TO-220AB
10.54 (0.415) MAX.
9.40 (0.370)
9.14 (0.360)
4.70 (0.185)
4.44 (0.1754)
3.91 (0.154)
3.74 (0.148)
1.39 (0.055)
1.14 (0.045)
2.87 (0.113)
2.62 (0.103)
3.68 (0.145)
3.43 (0.135)
1
PIN
2
15.32 (0.603)
14.55 (0.573)
16.13 (0.635)
15.87 (0.625)
8.89 (0.350)
8.38 (0.330)
29.16 (1.148)
28.40 (1.118)
3
4.06 (0.160)
3.56 (0.140)
2.79 (0.110)
2.54 (0.100)
1.45 (0.057)
1.14 (0.045)
14.22 (0.560)
13.46 (0.530)
2.67 (0.105)
2.41 (0.095)
0.90 (0.035)
0.70 (0.028)
2.65 (0.104)
2.45 (0.096)
0.56 (0.022)
0.36 (0.014)
5.20 (0.205)
4.95 (0.195)
TO-251
(I-PAK)
6.6(0.26)
2.4(0.095)
2.2(0.086)
6.4(0.52)
1.5(0.059)
5.4(0.212)
1.37(0.054)
5.2(0.204)
0.62(0.024)
0.48(0.019)
6.2(0.244)
4T
6(0.236)
16.3(0.641)
15.9(0.626)
1.9(0.075)
1.8(0.071)
9.4(0.37)
9(0.354)
0.85(0.033)
0.76(0.03)
0.65(0.026)
0.55(0.021)
4.6(0.181)
4.4(0.173)
0.62(0.024)
0.45(0.017)
TO-252
(D-PAK)
2.4(0.095)
2.2(0.086)
6.6(0.259)
6.4(0.251)
1.5(0.059)
5.4(0.212)
5.2(0.204)
1.37(0.054)
0.62(0.024)
0.48(0.019)
2
1
1.14(0.045)
0.76(0.030)
2.28(0.090)
2
3
9.35(0.368)
10.1(0.397)
0.89(0.035)
0.64(0.025)
4.57(0.180)
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Page 6 of 6
6.2(0.244)
6(0.236)
0.62(0.024)
0.45(0.017)
RoHS