ACE4953B Dual P-Channel Enhancement Mode Field Effect Transistor Description The ACE4953B uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications. Features VDS(V)=-20V ID=-5.5A (VGS=-10V) RDS(ON)<55mΩ (VGS=-10V) RDS(ON)<58mΩ (VGS=-4.5V) RDS(ON)<80mΩ (VGS=-2.5V) Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage VDSS -20 V VGSS ±12 V Gate-Source Voltage O Drain Current (Continuous) * AC TA=25 C TA=70 OC Drain Current (Pulse) * B Power Dissipation ID IDM TA=25 OC O TA=70 C PD -5.5 -4.4 -25 2 1.5 Operating and Storage Temperature Range TJ,TSTG -55 to 150 A A W O C Packaging Type SOP-8 VER 1.2 1 ACE4953B Dual P-Channel Enhancement Mode Field Effect Transistor Ordering information ACE4953B XX + H Halogen - free Pb - free FM : SOP-8 Electrical Characteristics O TA=25 C unless otherwise noted Parameter Symbol Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=-250uA Zero Gate Voltage Drain Current IDSS VDS=-20V, VGS=0V -1 uA Gate Leakage Current IGSS VGS=±12V, VDS=0V 100 nA Drain-Source On-State Resistance RDS(ON) -20 V VGS=-10V, ID=-6A 45 55 VGS=-4.5V, ID=-4.7A 51 58 VGS=-2.5V, ID=-1A 65 80 -0.8 -1.4 Gate Threshold Voltage VGS(th) VDS=VGS, IDS=-250uA -0.6 Forward Transconductance gFS VDS=-5V, ID=-5.5A 13 Diode Forward Voltage VSD VGS=0V, ISD=-1.7A -0.8 Maximum Body-Diode Continuous Current IS mΩ V S -1.1 V 1.7 A Switching Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) Turn- Off Rise Time tf VDS=-10V, VGS=-4.5V, ID=-4.5A VGS=-4.5V, VDS=-10V, RL=10Ω, RGEN=6Ω, ID=-1A 8.92 11.6 1.8 2.34 2.04 2.65 16.08 32.16 5.28 10.56 37.6 75.2 7.28 14.5 800 960 nC ns Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS=-10V, VGS=0V f=1MHz 131 pF 103 Note: A. The value of RθJA is measured with the device mounted on 1*1in FR-4 board with 2oz Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. B. Repetitive rating, pulse width limited by junction temperature. C. The current rating is based on the t≤ 10s junction to ambient thermal resistance rating. VER 1.2 2 ACE4953B Dual P-Channel Enhancement Mode Field Effect Transistor Typical Performance Characteristics VER 1.2 3 ACE4953B Dual P-Channel Enhancement Mode Field Effect Transistor Typical Performance Characteristics VER 1.2 4 ACE4953B Dual P-Channel Enhancement Mode Field Effect Transistor Packing Information SOP-8 Unit: mm VER 1.2 5 ACE4953B Dual P-Channel Enhancement Mode Field Effect Transistor Notes ACE does not assume any responsibility for use as critical components in life support devices or systems without the express written approval of the president and general counsel of ACE Electronics Co., LTD. As sued herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and shoes failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ACE Technology Co., LTD. http://www.ace-ele.com/ VER 1.2 6