AM1517-012 RF & MICROWAVE TRANSISTORS SATELLITE COMMUNICATIONS APPLICATIONS .. .. .. . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED ∞ :1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING METAL/CERAMIC HERMETIC PACKAGE POUT = 12 W MIN. WITH 8.5 dB GAIN .400 x .400 2NLFL (S042) hermeticallysealed ORDER CODE AM1517-012 BRANDING 1517-12 PIN CONNECTION DESCRIPTION The AM1517-012 power transistor is designed specifically for Satellite communications applications in the 1.5 − 1.7 GHz frequency range. The device is capable of withstanding any mismatch load condition at any phase angle (VSWR ∞:1) under full rated conditions. The unit is an overlay, emitter site ballasted, geometry utilizing a Refractory/Gold metallization system. The AM1517-012 is supplied in the AMPAC Hermetic/Ceramic package with internal Input/Output matching structures. 1. Collector 2. Base 3. Emitter 4. Base ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Value Unit 27 W 1.25 A Collector-Supply Voltage* 30 V TJ Junction Temperature 200 °C T STG Storage Temperature − 65 to +200 °C 5.5 °C/W PDISS IC VCC Parameter Power Dissipation* (TC ≤100°C) Device Current* THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* *Applies only to rated RF amplifier operation September 1992 1/6 AM1517-012 ELECTRICAL SPECIFICATIONS (Tcase = 25 ° C) STATIC Symbol Valu e Test Conditions Min. Typ. Max. Unit BVCBO IC = 4mA IE = 0mA 45 — — V BVEBO IE = 4mA IC = 0mA 3.0 — — V — — 1 mA 15 — 150 — ICBO VCB = 28V hFE VCE = 5V IC = .8A DYNAMIC Symbol Min. Typ. Max. Unit POUT ηc f = 1.5 — 1.7GHz PIN = 1.7W VCC = 28V 12 13 — W f = 1.5 — 1.7GHz PIN = 1.7W VCC = 28V 55 58 — % GP f = 1.5 — 1.7GHz PIN = 1.7W VCC = 28V 8.5 — — dB Note: AM1517 series vary PIN to achi eve P OUT; perf ormance guaranteed in 50 MHz increment s. Alpha-Suff ix added t o AM1517 P/N designates band segment. A -1500 M -1620 S -1625 2/6 Value Test Conditions = = = 1550 MHz 1660 MHz 1675 MHz AM1517-012 TYPICAL PERFORMANCE TYPICAL PERFORMANCE vs DRIVE POWER POWER OUTPUT vs TEMPERATURE COLLECTOR EFFICIENCY vs TEMPERATURE TYPICAL PERFORMANCE vs VOLTAGE @ FIXED DRIVE GAIN vs TEMPERATURE 3/6 AM1517-012 IMPEDANCE DATA TYPICAL INPUT IMPEDANCE Z IN POUT = 12 W VCC = 28 V Z O = 50 ohms L = 1.50 GHz ZIN (Ω) 13.0 + j 13.5 ZCL (Ω) 11.5 + j 5.0 M = 1.60 GHz 13.0 + j 12.0 10.5 + j 2.2 H = 1.70 GHz 14.5 + j 12.5 9.5 − j 1.5 FREQ. TYPICAL COLLECTOR LOAD IMPEDANCE ZCL POUT = 12 W VCC = 28 V ZO = 50 ohms 4/6 AM1517-012 TEST CIRCUIT All dimensions are in inches. PACKAGE MECHANICAL DATA 5/6 AM1517-012 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 6/6