AO4614B Complementary Enhancement Mode Field Effect Transistor General Description Features The AO4614B/L uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. AO4614B and AO4614BL are electrically identical. n-channel VDS (V) = 40V, RDS(ON)< 30mΩ RDS(ON)< 38mΩ p-channel VDS (V) = -40V, RDS(ON)< 45mΩ RDS(ON)< 63mΩ -RoHS Compliant -AO4614BL is Halogen Free ID = 6A (VGS=10V) (VGS=10V) (VGS=4.5V) ID = -5A (VGS=-10V) (VGS= -10V) (VGS= -4.5V) D1 D2 S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 G1 G2 S1 S2 SOIC-8 p-channel n-channel Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Max n-channel Symbol V Drain-Source Voltage 40 DS VGS Gate-Source Voltage ±20 Continuous Drain Current A Pulsed Drain Current B TA=70°C B Repetitive avalanche energy L=0.1mH TA=25°C TA=70°C Junction and Storage Temperature Range -5 5 -4 30 -30 IAR 14 -20 EAR 9.8 20 2 2 1.28 1.28 -55 to 150 -55 to 150 TJ, TSTG Thermal Characteristics: n-channel and p-channel Parameter A t ≤ 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient C Steady-State Maximum Junction-to-Lead A t ≤ 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient C Steady-State Maximum Junction-to-Lead Alpha & Omega Semiconductor, Ltd. V ID IDM PD Symbol RθJA RθJL RθJA RθJL Units V ±20 6 TA=25°C Avalanche Current B Power Dissipation Max p-channel -40 A mJ W °C Device n-ch n-ch n-ch Typ 48 74 35 Max 62.5 110 50 Units °C/W °C/W °C/W p-ch p-ch p-ch 48 74 35 62.5 110 50 °C/W °C/W °C/W www.aosmd.com AO4614B N Channel Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V 40 1 TJ=55°C 5 IGSS Gate-Body leakage current VDS=0V, VGS= ±20V Gate Threshold Voltage VDS=VGS ID=250µA 1.7 ID(ON) On state drain current VGS=10V, VDS=5V 30 RDS(ON) Static Drain-Source On-Resistance ±100 VGS=10V, ID=6A TJ=125°C VGS=4.5V, ID=5A gFS Forward Transconductance VSD IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current VDS=5V, ID=6A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg (10V) Total Gate Charge Qg (4.5V) Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr Turn-On Rise Time Max Units V VDS=40V, VGS=0V VGS(th) IS Typ 2.5 3 µA nA V A 24 30 36 45 30 38 19 0.76 516 mΩ S 1 V 2 A 650 pF VGS=0V, VDS=20V, f=1MHz 82 pF 43 pF VGS=0V, VDS=0V, f=1MHz 4.6 Ω VGS=10V, VDS=20V, ID=6A 8.9 10.8 nC 4.3 5.6 nC 2.4 nC Gate Drain Charge 1.4 nC Turn-On DelayTime 6.4 ns 3.6 ns 16.2 ns 6.6 ns VGS=10V, VDS=20V, RL=3.3Ω, RGEN=3Ω tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=6A, dI/dt=100A/µs 18 Qrr Body Diode Reverse Recovery Charge IF=6A, dI/dt=100A/µs 10 24 ns nC 2 A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. 9 D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. 12 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Rev0 : Sept 2007 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4614B TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL 40 30 10V 35 5V 30 4.5V 20 25 4V ID(A) ID (A) VDS=5V 25 20 15 15 10 10 125°C VGS=3.5V 25°C 5 5 0 0 1 2 3 4 0 5 2 2.5 VDS (Volts) Fig 1: On-Region Characteristics 4 4.5 1.8 34 Normalized On-Resistance VGS=4.5V 32 RDS(ON) (mΩ) 3.5 VGS(Volts) Figure 2: Transfer Characteristics 36 30 28 26 VGS=10V 24 22 20 1.6 VGS=10V ID=6A 1.4 1.2 VGS=4.5V ID=5A 1 0.8 0.6 0 5 10 15 -50 20 100 80 ID=6A 70 -25 0 25 50 75 100 125 150 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 9 12 10 60 1 50 IS (A) RDS(ON) (mΩ) 3 125°C 40 125°C 25°C 0.01 25°C 30 0.1 0.001 20 0.0001 10 3 4 5 6 7 8 9 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics www.aosmd.com AO4614B TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL 800 10 VDS=20V ID= 6A Capacitance (pF) VGS (Volts) 8 6 4 2 Ciss 600 400 Crss 200 Coss 0 0 0 2 4 6 8 0 10 10 20 30 40 VDS (Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics 1000 100 TJ(Max)=150°C TA=25°C 10µs 100µs 1 RDS(ON) limited 1ms 10ms 0.1s 1s 10s 0.1 TJ(Max)=150°C TA=25°C DC Power (W) ID (Amps) 10 1 10 10 1 0.00001 0.01 0.1 100 100 0.001 0.1 10 1000 VDS (Volts) Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 9 12 ZθJA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=74°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4614B P-Channel Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID= -250µA, VGS=0V -40 Gate-Body leakage current VDS=0V, VGS= ±20V Gate Threshold Voltage VDS=VGS ID= -250µA -1.7 ID(ON) On state drain current VGS= -10V, VDS= -5V -30 RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS= -4.5V, ID= -4A Diode Forward Voltage IS= -1A,VGS=0V Maximum Body-Diode Continuous Current VDS= -5V, ID= -5A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg (-10V) Total Gate Charge Qg (-4.5V) Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr Turn-On Rise Time nA V ±100 VGS= -10V, ID= -5A Forward Transconductance µA -5 IGSS VSD Units -1 TJ=55°C gFS Max V VDS= -40V, VGS=0V VGS(th) IS Typ -2 A 36 45 52 65 50 63 mΩ 13 -0.76 940 VGS=0V, VDS= -20V, f=1MHz -3 S -1 V -2 A 1175 pF 97 pF 72 pF VGS=0V, VDS=0V, f=1MHz 14 Ω 17 22 nC VGS= -10V, VDS= -20V, ID= -5A 7.9 10 nC 3.4 nC Gate Drain Charge 3.2 nC Turn-On DelayTime 6.2 ns 8.4 ns 44.8 ns 41.2 ns VGS= -10V, VDS= -20V, RL=4Ω, RGEN=3Ω tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF= -5A, dI/dt=100A/µs 21 Qrr Body Diode Reverse Recovery Charge IF= -5A, dI/dt=100A/µs 14 27 ns nC 2 A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with 2 A:T The value of R θJA is in measured with the device mounted FR-4 board board with 2oz. Copper, a still air environment with any given application depends onon the1in user's specific design. Thein current rating is based on theTA =25°C. The A =25°C. The value value anythermal a givenresistance application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance t ≤in10s rating. rating. B: Repetitive rating, pulse width limited by junction temperature. 9 B: rating, pulse limitedimpedence by junctionfrom temperature. the sum of width the thermal junction to lead RθJL and lead to ambient. C.Repetitive The R θJA is 12 C. the sum of theinthermal from to using lead R<300 to ambient. θJA ischaracteristics θJL and D.The TheRstatic Figuresimpedence 1 to 6,12,14 arejunction obtained µs lead pulses, duty cycle 0.5% max. 2 using 80 µs pulses, duty cycle 0.5% max. D. The static characteristics in Figures 1 to 6,12,14 are obtained E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with E. performed with the devicepulse mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The =25°C.tests The are SOA curve provides a single rating. T AThese SOA provides Rev0curve : Sept 2007 a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4614B TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL 30 30 VDS=-5V -10V 25 -5V -4V -4.5V 20 -ID(A) 20 -ID (A) 25 15 VGS=-3.5V 10 15 10 5 125°C 5 0 25°C 0 0 1 2 3 4 5 1.5 -VDS (Volts) Fig 12: On-Region Characteristics 2.5 3 3.5 4 4.5 -VGS(Volts) Figure 13: Transfer Characteristics 65 1.7 Normalized On-Resistance 60 VGS=-4.5V 55 RDS(ON) (mΩ) 2 50 45 40 VGS=-10V 35 VGS=-10V ID=-5A 1.5 1.3 1.1 VGS=-4.5V ID=-4A 0.9 0.7 30 0 5 10 15 -50 20 -ID (A) Figure 14: On-Resistance vs. Drain Current and Gate Voltage -25 0 25 50 75 100 125 150 Temperature (°C) Figure 15: On-Resistance vs. Junction Temperature 130 100 ID=-5A 9 12 10 110 -IS (A) RDS(ON) (mΩ) 1 90 70 125°C 50 125°C 0.1 25°C 0.01 0.001 25°C 0.0001 30 3 4 5 6 7 8 9 10 -VGS (Volts) Figure 16: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 17: Body-Diode Characteristics www.aosmd.com AO4614B TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL 10 1200 6 4 Ciss 1000 Capacitance (pF) 8 -VGS (Volts) 1400 VDS=-20V ID= -5A 800 600 400 2 Crss Coss 200 0 0 0 3 6 9 12 15 0 18 10 20 40 -VDS (Volts) Figure 19: Capacitance Characteristics Qg (nC) Figure 18: Gate-Charge Characteristics 1000 100 TJ(Max)=150°C TA=25°C 10µs 100µs 1 RDS(ON) limited 0.1 TJ(Max)=150°C TA=25°C 1ms 10ms 0.1s 1s 10s DC Power (W) 10 -ID (Amps) 30 1 10 10 1 0.00001 0.01 0.1 100 100 0.001 0.1 10 1000 -VDS (Volts) Pulse Width (s) Figure 21: Single Pulse Power Rating Junction-to Ambient (Note E) Figure 20: Maximum Forward Biased Safe Operating Area (Note E) ZθJA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=74°C/W 9 12 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Ton 0.01 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 22: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. www.aosmd.com