AON4420L N-Channel Enhancement Mode Field Effect Transistor General Description Features The AON4420L combines advanced trench MOSFET technology with a small footprint package to provide low RDS(ON) per unit area. This device is ideal for load switch and high speed switching applications. VDS (V) = 30V ID = 10A (VGS = 10V) RDS(ON) < 19mΩ (VGS = 10V) RDS(ON) < 25mΩ (VGS = 4.5V) - RoHS Compliant - Halogen Free DFN 3x2 Top View D Bottom View Pin 1 D D D D D D G S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Pulsed Drain Current C IDM Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd. W 1 TJ, TSTG -55 to 150 Symbol t ≤ 10s Steady-State Steady-State A 1.6 PD TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A B Maximum Junction-to-Lead V 8 ID TA=25°C Power Dissipation ±20 10 TA=70°C A Units V 50 TA=25°C Continuous Drain Current A Maximum 30 RθJA RθJL Typ 34 66 20 °C Max 40 80 25 Units °C/W °C/W °C/W www.aosmd.com AON4420L Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID = 250µA, VGS = 0V Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS = 0V, VGS = ±20V 1 5 VGS(th) Gate Threshold Voltage VDS = VGS ID = 250µA 1.4 On state drain current VGS = 10V, VDS = 5V 50 RDS(ON) Static Drain-Source On-Resistance gFS Forward Transconductance VSD IS = 1A,VGS = 0V Diode Forward Voltage Maximum Body-Diode Continuous Current VGS = 10V, ID = 10A Crss Reverse Transfer Capacitance Rg Gate resistance 21 30 SWITCHING PARAMETERS Qg (10V) Total Gate Charge (10V) Qg (4.5V) Total Gate Charge (4.5V) Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=10A ±100 nA 2.5 V 20 27 VDS = 5V, ID = 10A VGS=0V, VDS=15V, f=1MHz µA A VGS = 4.5V, ID = 8A DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance 1.9 16 TJ=125°C Units V TJ = 55°C ID(ON) Coss Max 30 VDS = 30V, VGS = 0V IDSS IS Typ 0.75 mΩ 26 S 1 V 3 A 440 550 660 pF 80 110 140 pF 35 55 80 pF 2 4 6 Ω 8 9.8 12 nC 4 4.6 5.5 nC 1.5 1.8 2.2 nC 1.3 2.2 3 nC VGS=10V, VDS=15V, RL=1.5Ω, RGEN=3Ω 5 ns 3.2 ns 24 ns 6 ns trr Body Diode Reverse Recovery Time IF=10A, dI/dt=300A/µs 8 11 14 Qrr Body Diode Reverse Recovery Charge IF=10A, dI/dt=300A/µs 11 13 16 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A = 25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using t ≤ 300µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. F. The current rating is based on the t ≤ 10s thermal resistance rating. Rev0: July 2008 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AON4420L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 50 50 10V 4.5V VDS=5V 4V 40 40 3.5V 125°C 30 ID(A) ID (A) 30 20 20 25°C VGS=3V 10 10 0 0 0 1 2 3 4 5 0 VDS (Volts) Figure 1: On-Region Characteristics 3 4 5 VGS=4.5V 20 15 VGS=10V 10 0 2 4 Normalized On-Resistance 1.8 25 RDS(ON) (mΩ) 2 VGS(Volts) Figure 2: Transfer Characteristics 30 VGS=10V ID=10A 1.6 VGS=4.5V ID=8A 1.4 1.2 1.0 0.8 IF6=-6.5A, 8dI/dt=100A/µs 10 -50 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 40 50 100 150 200 1E+02 1E+01 ID=10A 1E+00 1E-01 IS (A) 50 0 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 60 RDS(ON) (mΩ) 1 125°C 1E-02 125°C 1E-03 MARKET. APPLICATIONS OR USES AS CRITICAL 30 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING 1E-04 25°C 25°C OUT OF 20 SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, 1E-05 FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 1E-06 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 2 4 6 8 10 VSD (Volts) VGS (Volts) Figure 6: Body-Diode Characteristics Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. www.aosmd.com AON4420L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 800 10 VDS=15V ID=10A 6 4 Ciss 600 Capacitance (pF) VGS (Volts) 8 400 Coss 200 2 0 Crss 0 0 2 4 6 8 10 0 5 Qg (nC) Figure 7: Gate-Charge Characteristics RDS(ON) limited 25 30 100µs 1ms 10ms 100ms 0.1 TJ(Max)=150°C TA=25°C DC 0.01 0.1 TJ(Max)=150°C TA=25°C 10µs Power (W) ID (Amps) 20 1000 1 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=80°C/W 0.001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junctionto-Ambient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 10 1 0.00001 IF=-6.5A, dI/dt=100A/µs 10 100 1 100 10s VDS (Volts) ZθJA Normalized Transient Thermal Resistance 15 VDS (Volts) Figure 8: Capacitance Characteristics 100 10 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL PD COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH 0.01 APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, Ton FUNCTIONS AND RELIABILITY WITHOUT T SingleNOTICE. Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance(Note E) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AON4420L Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - VDC DUT Qgd Qgs - Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs 90% + Vdd VDC Rg - Vgs 10% Vgs td(on) tr td(off) ton tf toff Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Isd L Vgs Ig Alpha & Omega Semiconductor, Ltd. + Vdd VDC - IF t rr dI/dt I RM Vdd Vds www.aosmd.com