AOSMD AON7410

AON7410
30V N-Channel MOSFET
General Description
Features
The AON7410 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate
charge. This device is suitable for use in DC - DC
converters and Load Switch applications.
VDS (V) = 30V
ID = 24A
RDS(ON) < 20mΩ
RDS(ON) < 26mΩ
(VGS = 10V)
(VGS = 10V)
(VGS = 4.5V)
100% UIS Tested
100% Rg Tested
Top View
DFN 3x3 EP
Bottom View
D
Top View
1
8
2
7
3
6
4
5
G
Pin 1
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current B
Avalanche Current
C
Power Dissipation
C
B
C
15
IDM
50
A
Junction and Storage Temperature Range
Maximum Junction-to-Case B
7.7
IAS, IAR
17
A
EAS, EAR
14
mJ
20
8.3
2
TJ, TSTG
-55 to 150
Symbol
t ≤ 10s
Steady-State
Steady-State
Alpha & Omega Semiconductor, Ltd.
W
3.1
PDSM
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
A
IDSM
PD
TC=100°C
TA=25°C
Power Dissipation
V
9.5
TA=70°C
Repetitive avalanche energy L=0.1mH
TC=25°C
±20
ID
TA=25°C
Continuous Drain
Current A
Units
V
24
TC=100°C
Pulsed Drain Current
Maximum
30
RθJA
RθJC
Typ
30
60
5
°C
Max
40
75
6
Units
°C/W
°C/W
°C/W
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AON7410
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V
1
TJ=55°C
5
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±20V
Gate Threshold Voltage
VDS=VGS ID=250µA
1.4
ID(ON)
On state drain current
VGS=10V, VDS=5V
50
±100
VGS=10V, ID=8A
1.8
2.5
16
20
24
29
21
26
Forward Transconductance
VDS=5V, ID=8A
30
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.75
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg (10V) Total Gate Charge
Qg (4.5V) Total Gate Charge
Qgs
Gate Source Charge
VGS=10V, VDS=15V, ID=8A
nA
V
mΩ
S
1
V
20
A
pF
440
550
660
77
110
143
pF
33
55
77
pF
3
4
4.9
Ω
7.8
9.8
12
nC
3.6
4.6
5.5
nC
1.4
1.8
2.2
nC
1.3
2.2
3
nC
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
IF=8A, dI/dt=500A/µs
7
9
11
Qrr
Body Diode Reverse Recovery Charge IF=8A, dI/dt=500A/µs
12
15
18
Body Diode Reverse Recovery Time
µA
A
VGS=4.5V, ID=7A
gFS
TJ=125°C
Units
V
VDS=30V, VGS=0V
Static Drain-Source On-Resistance
Max
30
VGS(th)
RDS(ON)
Typ
VGS=10V, VDS=15V, RL=2Ω,
RGEN=3Ω
5
ns
3.2
ns
24
ns
6
ns
ns
nC
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on RθJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given
application depends on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
150
E. The static characteristics in Figures 1 to 6 are obtained using <300ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
Rev11: Jul-2011
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
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AON7410
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
50
50
VDS= 5V
10V
4.5V
4V
40
40
30
ID(A)
ID (A)
30
3.5V
20
20
125°C
10
10
VGS= 3V
25°C
0
0
0
1
2
3
4
5
1
VDS (Volts)
Figure 1: On-Region Characteristics
26
Normalized On-Resistance
RDS(ON) (mΩ
Ω)
3
4
VGS(Volts)
Figure 2: Transfer Characteristics
5
1.8
24
VGS= 4.5V
22
20
18
VGS= 10V
16
14
0
5
10
15
VGS= 10V
ID= 8A
1.6
1.4
VGS= 4.5V
ID= 7A
1.2
1.0
0.8
IF=-6.5A,
dI/dt=100A/µs
20
25
30
0
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
1E+02
50
ID= 8A
45
1E+01
40
1E+00
35
1E-01
30
IS (A)
RDS(ON) (mΩ
Ω)
2
125°C
25
1E-02
125°C
1E-03
20
25°C
1E-04
15
25°C
1E-05
10
1E-06
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics
1.2
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AON7410
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
800
10
VDS= 15V
ID= 8A
Capacitance (pF)
VGS (Volts)
8
6
4
Ciss
600
400
200
Coss
2
Crss
0
0
0
2
4
6
8
0
10
5
10
15
25
30
VDS (Volts)
Figure 8: Capacitance Characteristics
Qg (nC)
Figure 7: Gate-Charge Characteristics
300
100
TJ(Max)=150°C
TC=25°C
10µs
10
100µs
Power (W)
ID (Amps)
20
1ms
DC
1
RDS(ON)
limited
200
100
0.1
TJ(Max)=150°C
TA=25°C
0
0.01
0.1
1
10
100
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note H)
0.00001 0.0001 0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junctionto-Case (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=6°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance(Note F)
Alpha & Omega Semiconductor, Ltd.
100
1000
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AON7410
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
20
Current rating ID(A)
Power Dissipation (W)
25
15
10
5
0
20
10
0
0
25
50
75
100
125
150
0
25
TCASE (°
°C)
Figure 12: Power De-rating (Note F)
50
75
100
125
150
TCASE (°
°C)
Figure 13: Current De-rating (Note F)
1000
TA=25°C
Power (W)
100
10
1
0.0001 0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-toAmbient (Note H)
Zθ JA Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
D=Ton/T
RθJA=75°C/W
TJ,PK=TA+PDM.ZθJA.RθJA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJA=75°C/W
0.1
0.01
Single Pulse
Single Pulse
0.001
0.00001
0.0001
0.01
0.1
1
10
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance(Note H)
Alpha & Omega Semiconductor, Ltd.
0.001
100
1000
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AON7410
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
Vgs
90%
+ Vdd
DUT
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
t off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
EAR= 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vgs
Vds Isd
L
Vgs
Ig
Alpha & Omega Semiconductor, Ltd.
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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