AP04N70BP Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Dynamic dv/dt Rating BVDSS D ▼ Repetitive Avalanche Rated RDS(ON) ▼ Fast Switching ID G ▼ Simple Drive Requirement 600/650/700V 2.4Ω 4A S Description AP04N70 series are specially designed as main switching devices for universal 90~265VAC off-line AC/DC converter applications. TO-220 type provide high blocking voltage to overcome voltage surge and sag in the toughest power system with the best combination of fast switching,ruggedized design and cost-effectiveness. G D TO-220 S The TO-220 package is universally preferred for all commercialindustrial applications. The device is suited for switch mode power supplies ,DC-AC converters and high current high speed switching circuits. Absolute Maximum Ratings Symbol Parameter Rating Units 600/650/700 V ± 30 V VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TC=25℃ Continuous Drain Current, VGS @ 10V 4 A ID@TC=100℃ Continuous Drain Current, VGS @ 10V 2.5 A 15 A 62.5 W 0.5 W/℃ 100 mJ - /A/H 1 IDM Pulsed Drain Current PD@TC=25℃ Total Power Dissipation Linear Derating Factor 2 EAS Single Pulse Avalanche Energy IAR Avalanche Current 4 A EAR Repetitive Avalanche Energy 4 mJ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Value Unit Rthj-c Thermal Resistance Junction-case Max. 2.0 ℃/W Rthj-a Thermal Resistance Junction-ambient Max. 62 ℃/W Data & specifications subject to change without notice 20030332 AP04N70BP Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS Parameter Test Conditions Drain-Source Breakdown Voltage Min. Typ. Max. Units VGS=0V, ID=1mA /- 600 - - V VGS=0V, ID=1mA /A 650 - - V VGS=0V, ID=1mA /H 700 - - V ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.6 - V/℃ RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=2A - - 2.4 Ω VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 4 V gfs Forward Transconductance VDS=10V, ID=2A - 2.5 - S IDSS Drain-Source Leakage Current (Tj=25oC) VDS=600V, VGS=0V - - 10 uA Drain-Source Leakage Current (Tj=150 C) VDS=480V,VGS=0V - - 100 uA Gate-Source Leakage VGS= ± 30V - - ±100 nA ID=4A - 16.7 - nC o IGSS 3 Qg Total Gate Charge Qgs Gate-Source Charge VDS=480V - 4.1 - nC Qgd Gate-Drain ("Miller") Charge VGS=10V - 4.9 - nC VDD=300V - 11 - ns 3 td(on) Turn-on Delay Time tr Rise Time ID=4A - 8.3 - ns td(off) Turn-off Delay Time RG=10Ω,VGS=10V - 23.8 - ns tf Fall Time RD=75Ω - 8.2 - ns Ciss Input Capacitance VGS=0V - 950 - pF Coss Output Capacitance VDS=25V - 65 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 6 - pF Min. Typ. - - 4 A - - 15 A - - 1.5 V Source-Drain Diode Symbol Parameter IS Continuous Source Current ( Body Diode ) ISM Pulsed Source Current ( Body Diode ) 1 VSD 3 Forward On Voltage Test Conditions VD=VG=0V , VS=1.5V Tj=25℃, IS=4A, VGS=0V Notes: 1.Pulse width limited by safe operating area. 2.Starting Tj=25oC , VDD=50V , L=25mH , RG=25Ω , IAS=4A. 3.Pulse width <300us , duty cycle <2%. Ordering Code AP04N70BP- X : X Denote BVDSS Grade Blank = BVDSS 600V A = BVDSS 650V H = BVDSS 700V Max. Units AP04N70BP 2.5 2 T C =25 o C T C =150 o C V G =10V V G =6.0V 2 1.5 ID , Drain Current (A) V G =5.0V ID , Drain Current (A) V G =10V V G =6.0V 1.5 V G =4.5V 1 V G =5.0V V G =4.5V 1 V G =4.0V 0.5 0.5 V G =4.0V V G =3.5V 0 0 0 1 2 3 4 5 6 7 0 2 4 6 8 10 12 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1.2 I D =2A 2.5 V G =10V 1.1 Normalized RDS(ON) Normalized BVDSS (V) 2 1 1.5 1 0.9 0.5 0 0.8 -50 0 50 100 T j , Junction Temperature ( o C) Fig 3. Normalized BVDSS v.s. Junction Temperature 150 -50 0 50 100 T j , Junction Temperature ( o C ) Fig 4. Normalized On-Resistance v.s. Junction Temperature 150 AP04N70BP 80 4.5 4 3.5 3 2.5 PD (W) ID , Drain Current (A) 60 2 40 1.5 20 1 0.5 0 0 25 50 75 100 125 150 0 50 T c , Case Temperature ( o C ) 100 150 T c , Case Temperature ( o C ) Fig 5. Maximum Drain Current v.s. Fig 6. Typical Power Dissipation Case Temperature 100 Normalized Thermal Response (R thjc) 1 ID (A) 10 10us 100us 1 1ms 10ms 0.1 100ms o DUTY=0.5 0.2 0.1 0.1 0.05 PDM t 0.02 0.01 SINGLE PULSE T Duty factor = t/T Peak Tj = P DM x Rthjc + TC T c =25 C Single Pulse 0.01 1 10 100 1000 V DS (V) Fig 7. Maximum Safe Operating Area 10000 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 t , Pulse Width (s) Fig 8. Effective Transient Thermal Impedance AP04N70BP 16 f=1.0MHz 10000 I D =4A V DS =320V 12 Ciss V DS =400V 10 V DS =480V C (pF) VGS , Gate to Source Voltage (V) 14 8 100 Coss 6 4 Crss 2 0 1 0 5 10 15 20 25 1 6 11 16 21 26 31 V DS (V) Q G , Total Gate Charge (nC) Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics 100 5 4 10 T j =150 o C 3 VGS(th) (V) IS (A) T j = 25 o C 2 1 1 0.1 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 V SD (V) Fig 11. Forward Characteristic of Reverse Diode 1.6 -50 0 50 100 T j , Junction Temperature ( o C ) Fig 12. Gate Threshold Voltage v.s. Junction Temperature 150 AP04N70BP VDS 90% RD VDS D 0.5x RATED VDS G RG TO THE OSCILLOSCOPE 10% + S 10 V VGS VGS - td(on) Fig 13. Switching Time Circuit td(off) tf tr Fig 14. Switching Time Waveform VG VDS 10V 0.8 x RATED VDS G S QG TO THE OSCILLOSCOPE D QGS QGD VGS + 1~ 3 mA IG ID Charge Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform Q