AP2301N
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
▼ Small Package Outline
D
▼ Surface Mount Device
BVDSS
-20V
RDS(ON)
130mΩ
ID
- 2.6A
S
SOT-23
Description
G
D
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
, low on-resistance and cost-effectiveness.
G
S
The SOT-23 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage
applications such as DC/DC converters.
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Rating
Units
- 20
V
± 12
V
3
-2.6
A
3
-2.1
A
Continuous Drain Current
Continuous Drain Current
1,2
IDM
Pulsed Drain Current
-10
A
PD@TA=25℃
Total Power Dissipation
1.38
W
Linear Derating Factor
0.01
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient
Data and specifications subject to change without notice
3
Max.
Value
Unit
90
℃/W
200407043
AP2301N
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
-20
-
-
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA
-
-0.1
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance2
VGS=-5V, ID=-2.8A
-
-
130
mΩ
VGS=-2.8V, ID=-2.0A
-
-
190
mΩ
VDS=VGS, ID=-250uA
-0.5
-
-
V
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
VGS=0V, ID=-250uA
VDS=-5V, ID=-2.8A
-
4.4
-
S
o
VDS=-20V, VGS=0V
-
-
-1
uA
o
Drain-Source Leakage Current (Tj=70 C)
VDS=-16V, VGS=0V
-
-
-10
uA
Gate-Source Leakage
VGS=±12V
-
-
±100
nA
ID=-2.8A
-
5.2
10
nC
Drain-Source Leakage Current (Tj=25 C)
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=-6V
-
1.36
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-5V
-
0.6
-
nC
VDS=-15V
-
5.2
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=-1A
-
9.7
-
ns
td(off)
Turn-off Delay Time
RG=6Ω,VGS=-10V
-
19
-
ns
tf
Fall Time
RD=15Ω
-
29
-
ns
Ciss
Input Capacitance
VGS=0V
-
295
-
pF
Coss
Output Capacitance
VDS=-6V
-
170
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
65
-
pF
Min.
Typ.
-
-
-1
A
-
-
-10
A
-
-
-1.2
V
Source-Drain Diode
Symbol
IS
ISM
VSD
Parameter
Test Conditions
VD=VG=0V , VS=-1.2V
Continuous Source Current ( Body Diode )
Pulsed Source Current ( Body Diode )
1
2
Forward On Voltage
Tj=25℃, IS=-1.6A, VGS=0V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board ; 270℃/W when mounted on min. copper pad.
Max. Units
AP2301N
10
10
VGS= -5V
o
T A =25 C
-ID , Drain Current (A)
-ID , Drain Current (A)
VGS= -4V
8
8
VGS= -3V
6
4
VGS= -2V
2
VGS= -3V
6
4
VGS= -2V
2
0
0
0
1
2
3
4
5
6
0
1
2
3
4
5
6
-V DS , Drain-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
800
1.8
I D = -2.8A
V GS = -5V
1.6
I D = -2A
T A =25 ℃
Normalized R DS(ON)
600
RDS(ON) (Ω )
VGS= -5V
o
T A =150 C
VGS= -4V
400
200
1.4
1.2
1
0.8
0
0
2
4
6
8
0.6
10
-50
0
-V GS , Gate-to-Source Voltage (V)
50
100
150
T j , Junction Temperature ( o C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
10
-VGS(th) (V)
1.5
-IS(A)
1
T j =150 o C
T j =25 o C
1.0
0.5
0
0.0
0
0.1
0.3
0.5
0.7
0.9
1.1
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.3
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
AP2301N
f=1.0MHz
-VGS , Gate to Source Voltage (V)
5
1000
I D =-2.8A
V DS =-6V
4
C iss
C oss
C (pF)
3
100
C rss
2
1
10
0
0
2
4
6
1
3
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
7
9
11
13
Fig 8. Typical Capacitance Characteristics
1
Normalized Thermal Response (Rthja)
100
10
-ID (A)
5
-V DS , Drain-to-Source Voltage (V)
1ms
1
10ms
100ms
0.1
T A =25 °C
Single Pulse
1s
DC
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.01
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Single Pulse
Rthja = 270℃
℃ /W
0.001
0.01
0.1
1
10
100
0.0001
0.001
0.01
-V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
-5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Fig 12. Gate Charge Waveform
Q