AP3403GH/J
Pb Free Plating Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low Gate Charge
D
▼ Simple Drive Requirement
▼ Fast Switching
BVDSS
-30V
RDS(ON)
200mΩ
ID
- 10A
G
S
Description
G D
Advanced Power MOSFETs utilized advanced processing techniques to
achieve the lowest possible on-resistance, extremely efficient and costeffectiveness device.
S
TO-252(H)
The TO-252/TO-251 package is universally used for all commercialindustrial application.
G
D
S
TO-251(J)
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
- 30
V
VGS
Gate-Source Voltage
± 20
V
ID@TA=25℃
Continuous Drain Current
-10
A
ID@TA=70℃
Continuous Drain Current
-8.6
A
1
IDM
Pulsed Drain Current
-48
A
PD@TA=25℃
Total Power Dissipation
36.7
W
Linear Derating Factor
0.29
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Unit
Rthj-case
Thermal Resistance Junction-case
Max.
3.4
℃/W
Rthj-amb
Thermal Resistance Junction-ambient
Max.
110
℃/W
Data and specifications subject to change without notice
200505031
AP3403GH/J
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
-30
-
-
V
-
-0.1
-
V/℃
VGS=-10V, ID=-6A
-
-
200
mΩ
VGS=-4.5V, ID=-4A
-
-
400
mΩ
VDS=VGS, ID=-250uA
-1
-
-3
V
VDS=-10V, ID=-6A
-
2
-
S
VDS=-30V, VGS=0V
-
-
-1
uA
Drain-Source Leakage Current (Tj=150 C)
VDS=-24V, VGS=0V
-
-
-25
uA
Gate-Source Leakage
VGS= ± 20V
-
-
±100
nA
ID=-6A
-
3.8
-
nC
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA
RDS(ON)
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
o
IDSS
Drain-Source Leakage Current (Tj=25 C)
o
IGSS
2
VGS=0V, ID=-250uA
2
Max. Units
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=-24V
-
1.7
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
1.6
-
nC
VDS=-15V
-
6.7
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=-6A
-
20.8
-
ns
td(off)
Turn-off Delay Time
RG=2Ω,VGS=-10V
-
14.9
-
ns
tf
Fall Time
RD=2.5Ω
-
4.4
-
ns
Ciss
Input Capacitance
VGS=0V
-
217
-
pF
Coss
Output Capacitance
VDS=-25V
-
103
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
31
-
pF
Min.
Typ.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
IS=-1.25A, VGS=0V
-
-
-1.2
V
trr
Reverse Recovery Time
IS=-6A, VGS=0V,
-
35
-
ns
Qrr
Reverse Recovery Charge
dI/dt=-100A/µs
-
63
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
AP3403GH/J
12
10
o
T C =25 C
-10V
-8.0V
-6.0V
8
-ID , Drain Current (A)
-ID , Drain Current (A)
T C =150 o C
-10V
-8.0V
-6.0V
10
8
-5.0V
6
4
V G =-4.0V
-5.0V
6
4
V G =-4.0V
2
2
0
0
0
1
2
3
4
5
0
6
2
3
4
5
6
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
250
1.8
I D =-10A
T c =25 ℃
I D =-10A
V G = -10V
Normalized R DS(ON)
1.6
200
RDS(ON) (mΩ )
1
-V DS , Drain-to-Source Voltage (V)
150
1.4
1.2
1
0.8
0.6
100
3
4
5
6
7
8
9
10
-50
11
0
50
100
150
T j , Junction Temperature ( o C)
-V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
100
3
10
T j =150 o C
1
-VGS(th) (V)
-IS(A)
2
T j =25 o C
1
0
0
0
0.1
0.3
0.5
0.7
0.9
1.1
1.3
-V SD , Source-to-Drain Voltage (V)
Fig5. Forward Characteristic of
Reverse Diode
1.5
-50
0
50
100
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
150
AP3403GH/J
f=1.0MHz
14
1000
-VGS , Gate to Source Voltage (V)
12
I D =-10A
V DS =-24V
10
Ciss
C (pF)
8
6
100
Coss
4
Crss
2
0
10
0
2
4
6
8
10
12
1
5
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
13
17
21
25
29
Fig 8. Typical Capacitance Characteristics
1
Normalized Thermal Response (Rthjc)
100
1ms
-ID (A)
9
-V DS , Drain-to-Source Voltage (V)
10ms
10
100ms
T c =25 o C
Single Pulse
DC
DUTY=0.5
0.2
0.1
0.1
0.05
PDM
t
T
0.02
0.01
Duty factor = t/T
Peak T j = PDM x Rthjc + TC
Single Pulse
0.01
1
0.00001
1
10
0.0001
0.001
0.01
0.1
-V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
RD
VDS
D
VDS
TO THE
OSCILLOSCOPE
D
TO THE
OSCILLOSCOPE
0.5 x RATED VDS
0.5 x RATED VDS
RG
G
G
S
VGS
S
-10 V
1
100
VGS
-1~-3mA
IG
Fig11. Switching Time Circuit
ID
Fig 12. Gate Charge Circuit