AP4501M
Advanced Power
Electronics Corp.
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Simple Drive Requirement
▼ Low On-resistance
▼ Fast Switching
N-CH BVDSS
D2
30V
RDS(ON)
D2
D1
D1
28mΩ
ID
G2
S2
SO-8
S1
7A
P-CH BVDSS
G1
Description
RDS(ON)
50mΩ
ID
-5.3A
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and costeffectiveness.
The SO-8 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage
applications such as DC/DC converters.
-30V
D2
D1
G2
G1
S2
S1
Absolute Maximum Ratings
Symbol
Parameter
Rating
N-channel
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Units
P-channel
30
-30
V
±20
±20
V
3
7
-5.3
A
3
5.8
-4.7
A
20
-20
A
Continuous Drain Current
Continuous Drain Current
1
IDM
Pulsed Drain Current
PD@TA=25℃
Total Power Dissipation
2
W
Linear Derating Factor
0.016
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-amb
Parameter
Thermal Resistance Junction-ambient 3
Data and specifications subject to change without notice
Max.
Value
Unit
62.5
℃/W
201225022
AP4501M
N-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
RDS(ON)
Static Drain-Source On-Resistance
VGS=0V, ID=250uA
2
Min. Typ. Max. Units
30
-
-
V
-
0.02
-
V/℃
VGS=10V, ID=7A
-
-
28
mΩ
VGS=4.5V, ID=5A
-
-
42
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=7A
-
13
-
S
IDSS
Drain-Source Leakage Current (Tj=25oC)
VDS=30V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (Tj=70 C)
VDS=24V, VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS=±20V
-
-
ID=7A
-
8.4
-
nC
o
IGSS
2
±100 nA
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=24V
-
2.1
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
4.7
-
nC
VDS=15V
-
6
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=1A
-
5.2
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
18.8
-
ns
tf
Fall Time
RD=15Ω
-
4.4
-
ns
Ciss
Input Capacitance
VGS=0V
-
645
-
pF
Coss
Output Capacitance
VDS=25V
-
150
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
95
-
pF
Source-Drain Diode
Symbol
IS
VSD
Parameter
Continuous Source Current ( Body Diode )
2
Forward On Voltage
Test Conditions
Min. Typ. Max. Units
VD=VG=0V , VS=1.2V
-
-
1.67
A
Tj=25℃, IS=7A, VGS=0V
-
-
1.2
V
AP4501M
P-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA
RDS(ON)
2
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
IGSS
VGS=0V, ID=-250uA
Min. Typ. Max. Units
-30
-
-
V
-
-0.028
-
V/℃
VGS=-10V, ID=-5.3A
-
-
50
mΩ
VGS=-4.5V, ID=-4.2A
-
-
90
mΩ
VDS=VGS, ID=-250uA
-1
-
-3
V
VDS=-10V, ID=-5.3A
-
8.5
-
S
o
VDS=-30V, VGS=0V
-
-
-1
uA
o
Drain-Source Leakage Current (Tj=70 C)
VDS=-24V, VGS=0V
-
-
-25
uA
Gate-Source Leakage
VGS= ± 20V
-
-
Drain-Source Leakage Current (Tj=25 C)
2
±100 nA
Qg
Total Gate Charge
ID=-5.3A
-
20
-
nC
Qgs
Gate-Source Charge
VDS=-15V
-
3.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-10V
-
2
-
nC
VDS=-15V
-
12
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=-1A
-
20
-
ns
td(off)
Turn-off Delay Time
RG=6Ω,VGS=-10V
-
45
-
ns
tf
Fall Time
RD=15Ω
-
27
-
ns
Ciss
Input Capacitance
VGS=0V
-
790
-
pF
Coss
Output Capacitance
VDS=-15V
-
440
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
120
-
pF
Source-Drain Diode
Symbol
IS
VSD
Parameter
Continuous Source Current ( Body Diode )
2
Forward On Voltage
Test Conditions
Min. Typ. Max. Units
VD=VG=0V , VS=-1.2V
-
-
-1.67
A
Tj=25℃, IS=-2.6A, VGS=0V
-
-
-1.2
V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board ; 135℃/W when mounted on Min. copper pad.
AP4501M
N-Channel
36
36
10V
8.0V
6.0V
5.0V
V GS =4.5V
24
ID , Drain Current (A)
ID , Drain Current (A)
10V
8.0V
6.0V
5.0V
12
24
V GS =4.5V
12
T C =150 o C
T C =25 o C
0
0
0
2
3
5
0
6
2
V DS , Drain-to-Source Voltage (V)
3
5
6
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2
90
I D =7.0A
V GS = 10V
I D =7.0A
T C =25 ℃
Normalized RDS(ON)
RDS(ON) (mΩ )
70
50
1.4
0.8
30
10
0.2
2
6
10
V GS (V)
Fig 3. On-Resistance v.s. Gate Voltage
14
-50
0
50
100
o
T j , Junction Temperature ( C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
150
AP4501M
8
2.4
6
1.8
PD (W)
ID , Drain Current (A)
N-Channel
4
1.2
0.6
2
0
0
25
50
75
100
125
0
150
50
100
150
T c ,Case Temperature ( o C)
o
T c , Case Temperature ( C)
Fig 5. Maximum Drain Current v.s.
Fig 6. Typical Power Dissipation
Case Temperature
100
1
Normalized Thermal Response (Rthja)
Duty Factor = 0.5
10
ID (A)
1ms
10ms
1
100ms
1s
0.1
T C =25 o C
Single Pulse
10s
DC
0.2
0.1
0.1
0.05
0.02
0.01
PDM
0.01
t
T
Single Pulse
Duty Factor = t/T
Peak Tj = P DM x R thja + Ta
o
Rthja=135 C/W
0.001
0.01
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
100
1000
V DS (V)
t , Pulse Width (s)
Fig 7. Maximum Safe Operating Area
Fig 8. Effective Transient Thermal Impedance
AP4501M
N-Channel
f=1.0MHz
12
10000
VGS , Gate to Source Voltage (V)
I D =7.0A
9
V DS= 1 6 V
V DS =20V
V DS =24V
1000
C (pF)
Ciss
6
Coss
Crss
100
3
0
10
0
4
8
12
16
1
7
13
19
25
31
V DS (V)
Q G , Total Gate Charge (nC)
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
3
100
2.5
10
2
o
o
T C =25 C
VGS(th) (V)
IS(A)
T C = 150 C
1
1.5
1
0.1
0.5
0
0.01
0
0.4
0.8
V SD (V)
Fig 11. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
o
T j , Junction Temperature ( C )
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
150
AP4501M
N-Channel
VDS
90%
RD
VDS
D
0.5 x RATED VDS
G
RG
TO THE
OSCILLOSCOPE
+
10%
VGS
S
VGS
10V
-
td(on)
Fig 13. Switching Time Circuit
td(off) tf
tr
Fig 14. Switching Time Waveform
VG
VDS
QG
TO THE
OSCILLOSCOPE
D
4.5V
0.8 x RATED VDS
QGS
G
S
QGD
VGS
+
1~ 3 mA
I
G
I
D
Charge
Fig 15. Gate Charge Circuit
Fig 16. Gate Charge Waveform
Q
AP4501M
P-Channel
20
20
10V
8.0V
6.0V
10V
8.0V
6.0V
15
-ID , Drain Current (A)
-ID , Drain Current (A)
15
V GS =4. 0 V
10
V GS =4. 0 V
10
5
5
T C =150 o C
T C =25 o C
0
0
0
1
2
3
0
4
Fig 1. Typical Output Characteristics
2
3
4
Fig 2. Typical Output Characteristics
90
1.8
I D =-5.3A
T C =25 ℃
I D =-5.3A
80
1.6
70
1.4
Normalized RDS(ON)
RDS(ON) (mΩ )
1
-V DS , Drain-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
60
50
V GS = -10V
1.2
1
0.8
40
0.6
30
3
4
5
6
7
8
9
10
11
-V GS (V)
Fig 3. On-Resistance v.s. Gate Voltage
-50
0
50
100
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
150
AP4501M
P-Channel
2.4
6
5
4
PD (W)
-ID , Drain Current (A)
1.8
3
1.2
2
0.6
1
0
0
25
50
75
100
125
150
0
50
o
100
150
T c ,Case Temperature ( o C)
T c , Case Temperature ( C)
Fig 5. Maximum Drain Current v.s.
Fig 6. Typical Power Dissipation
Case Temperature
1
100
Normalized Thermal Response (R thja)
Duty Factor = 0.5
10
-ID (A)
1ms
10ms
1
100ms
1s
0.1
10s
DC
T C =25 o C
Single Pulse
0.01
0.2
0.1
0.1
0.05
0.02
0.01
PDM
t
0.01
T
Single Pulse
Duty Factor = t/T
Peak Tj = P DM x Rthja + Ta
Rthja=135 oC/W
0.001
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
100
1000
-V DS (V)
t , Pulse Width (s)
Fig 7. Maximum Safe Operating Area
Fig 8. Effective Transient Thermal Impedance
AP4501M
P-Channel
14
I D =-5.3A
12
10
1000
V DS =-10V
V DS =-15V
V DS =-20V
8
Ciss
C (pF)
-VGS , Gate to Source Voltage (V)
f=1.0MHz
10000
6
Coss
Crss
100
4
2
0
10
0
5
10
15
20
25
30
1
5
9
13
17
21
25
29
-V DS (V)
Q G , Total Gate Charge (nC)
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
3
100.00
2.5
10.00
T j =150 o C
-VGS(th) (V)
-IS(A)
2
T j =25 o C
1.5
1.00
1
0.10
0.5
0.01
0
0.1
0.4
0.7
1
-V SD (V)
Fig 11. Forward Characteristic of
Reverse Diode
1.3
-50
0
50
100
T j ,Junction Temperature ( o C)
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
150
AP4501M
P-Channel
VDS
90%
RD
VDS
D
RG
TO THE
OSCILLOSCOPE
0.5 x RATED VDS
G
10%
S
-10 V
VGS
VGS
td(on)
Fig 13. Switching Time Circuit
td(off) tf
tr
Fig 14. Switching Time Waveform
VG
VDS
-10V
0.5 x RATED VDS
G
S
QG
TO THE
OSCILLOSCOPE
D
QGS
QGD
VGS
-1~-3mA
I
G
ID
Charge
Fig 15. Gate Charge Circuit
Fig 16. Gate Charge Waveform
Q