MICROSEMI APT150GT120JR

APT150GT120JR
1200V, 150A, VCE(ON) = 3.2V Typical
Thunderbolt IGBT®
The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using NonPunch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and
ultrafast switching speed.
OT
C
G
Features
• Low Forward Voltage Drop
E
E
• High Frequency Switching to 50KHz
• Integrated Gate Resistor • Ultra Low Leakage Current
7
S
• RBSOA and SCSOA Rated • Low Tail Current 22
"UL Recognized"
ISOTOP ®
file # E145592
Low EMI, High Reliability
• RoHS Compliant
Unless stated otherwise, Microsemi discrete IGBTs contain a single IGBT die. This device is made with two parallel
IGBT die. It is intended for switch-mode operation. It is not suitable for linear mode operation.
Maximum Ratings All Ratings: TC = 25°C unless otherwise specified.
Symbol Parameter
Ratings
VCES
Collector-Emitter Voltage
1200
VGE
Gate-Emitter Voltage
±20
IC1
Continuous Collector Current @ TC = 25°C
170
IC2
Continuous Collector Current @ TC = 100°C
90
PD
TJ, TSTG
Amps
450
Switching Safe Operating Area @ TJ = 150°C
450
Total Power Dissipation
830
Watts
-55 to 150
°C
Operating and Storage Junction Temperature Range
Static Electrical Characteristics Symbol Characteristic / Test Conditions
Min
Typ
Max
1200
-
-
Unit
V(BR)CES
Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 4mA)
VGE(TH)
Gate Threshold Voltage (VCE = VGE, IC = 6mA, Tj = 25°C)
4.5
5.5
6.5
Collector Emitter On Voltage (VGE = 15V, IC = 150A, Tj = 25°C)
2.7
3.2
3.7
Collector Emitter On Voltage (VGE = 15V, IC = 150A, Tj = 125°C)
-
4.0
-
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C) 2
-
-
150
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125°C) 2
-
-
TBD
Gate-Emitter Leakage Current (VGE = ±20V)
-
-
900
nA
1.75
2
3.25
Ω
VCE(ON)
ICES
IGES
RG(int)
Integrated Gate Resistor
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com
Volts
μA
B 6- 2008
SSOA
Pulsed Collector Current
Volts
052-6291 Rev
ICM
1
Unit
Dynamic Characteristics
Symbol
Cies
Characteristic
APT150GT120JR
Test Conditions
Min
Typ
Max
-
9300
-
-
1400
-
-
700
-
Gate Charge
-
10
-
Input Capacitance
VGE = 0V, VCE = 25V
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
VGEP
Gate-to-Emitter Plateau Voltage
f = 1MHz
Qg
Total Gate Charge
VGE = 15V
-
995
-
Qge
Gate-Emitter Charge
VCE= 600V
-
110
-
Gate-Collector Charge
IC = 150A
-
595
-
Qgc
TJ = 150°C, RG = 1.0Ω , VGE = 15V,
Unit
pF
V
nC
7
SSOA
td(on)
··tr
td(off)
tf
Switching Safe Operating Area
Turn-On Delay Time
-
Inductive Switching (25°C)
-
N/A
-
Turn-Off Delay Time
VCC = 800V
-
570
-
Current Fall Time
VGE = 15V
-
70
-
RG = 2.2Ω
-
TBD
-
TJ = +25°C
-
24.3
-
-
12.7
-
-
80
-
Inductive Switching (125°C)
-
165
-
VCC = 800V
-
635
-
VGE = 15V
-
75
-
IC = 150A
-
TBD
-
-
33.5
-
-
14.8
-
Current Rise Time
Turn-On Switching Energy
Eon2
Turn-On Switching Energy
5
Eoff
Turn-Off Switching Energy
6
td(on)
Turn-On Delay Time
tf
Current Rise Time
Turn-Off Delay Time
Current Fall Time
Turn-On Switching Energy
Eon2
Turn-On Switching Energy 5
Turn-Off Switching Energy
6
RG = 2.2Ω
TJ = 125°C
Thermal and Mechanical Characteristics
Symbol Characteristic / Test Conditions
R
θJC
WT
Torque
VIsolation
ns
IC = 150A
4
Eon1
Eoff
A
80
Eon1
td(off)
450
-
4
tr
L = 100μH, VCE= 1200V
mJ
ns
mJ
Min
Typ
Max
Unit
Junction to Case
-
-
0.15
°C/W
Package Weight
-
29.2
-
gm
-
-
10
in·lbf
-
-
1.1
N·m
2500
-
-
Volts
Terminals and Mounting Screws.
RMS Voltage (50-60Hz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.)
052-6291 Rev
B 6- 2008
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, Ices includes both IGBT and FRED leakages.
3 See MIL-STD-750 Method 3471.
4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to
the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode.
5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.)
6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
7 RG is external gate resistance not including gate driver impedance.
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Typical Performance Curves
APT150GT120JR
350
350
GE
= 15V
17V
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
TJ= 25°C
250
TJ= 125°C
200
150
TJ= 150°C
100
50
0
250
200
150
TJ= -55°C
100
TJ= 25°C
50
TJ= 125°C
0
2
4
6
8
10
12
TJ = 25°C.
250µs PULSE TEST
<0.5 % DUTY CYCLE
5
4
IC = 150A
3
IC = 75A
2
1
0
8
10
12
14
16
VGE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 5, On State Voltage vs Gate-to-Emitter Voltage
1.05
0.95
0.90
0.85
0.80
0.75
-.50 -.25
0
25
50 75 100 125 150
TJ, JUNCTION TEMPERATURE
FIGURE 7, Threshold Voltage vs Junction Temperature
11V
150
100
10V
50
9V
8V
I = 15-0A
C
T = 25°C
18
J
16
VCE = 240V
14
VCE = 600V
12
10
VCE = 960V
8
6
4
2
0
200
400
600
800
1000
1200
GATE CHARGE (nC)
FIGURE 4, Gate charge
7
VGE = 15V.
250µs PULSE TEST
<0.5 % DUTY CYCLE
6
5
IC = 300A
IC = 150A
4
IC = 75A
3
2
1
0
0
25
50
75
100
125
150
TJ, Junction Temperature (°C)
FIGURE 6, On State Voltage vs Junction Temperature
150
IC, DC COLLECTOR CURRENT (A)
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
1.10
1.00
12V
200
0
14
IC = 300A
250
20
VGE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 3, Transfer Characteristics
6
13V
0
5
10
15
20
25
30
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 2, Output Characteristics (TJ = 25°C)
VGE, GATE-TO-EMITTER VOLTAGE (V)
300
0
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
250µs PULSE
TEST<0.5 % DUTY
CYCLE
15V
0
0
1
2
3
4
5
6
7
8
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics (TJ = 25°C)
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
IC, COLLECTOR CURRENT (A)
350
300
125
100
75
50
25
0
25
50
75
100
125
150
TC, Case Temperature (°C)
FIGURE 8, DC Collector Current vs Case Temperature
052-6291 Rev A 1 - 2008
V
300
Typical Performance Curves
APT150GT120JR
750
td(OFF), TURN-OFF DELAY TIME (ns)
td(ON), TURN-ON DELAY TIME (ns)
100
VGE = 15V
80
60
40
20
VCE = 800V
TJ = 25°C, or 125°C
RG = 2.2Ω
L = 100µH
0
VGE =15V,TJ=125°C
450
VGE =15V,TJ=25°C
300
150
VCE = 800V
RG = 2.2Ω
L = 100µH
0
0
50
100
150
200
250
300
ICE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
400
600
0
50
100
150
200 250
300
ICE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 10, Turn-Off Delay Time vs Collector Current
250
RG = 2.2Ω, L = 100µH, VCE = 800V
RG = 2.2Ω, L = 100µH, VCE = 800V
350
200
250
tr, FALL TIME (ns)
tr, RISE TIME (ns)
300
200
150
100
TJ = 25 or 125°C,VGE = 15V
150
TJ = 25°C, VGE = 15V
100
50
TJ = 125°C, VGE = 15V
50
0
Eon2, TURN ON ENERGY LOSS (mJ)
0
50
100
150
200
250
300
ICE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
100
V
= 800V
CE
V
= +15V
GE
R = 2.2Ω
G
80
60
TJ = 125°C
40
TJ = 25°C
20
EOFF, TURN OFF ENERGY LOSS (mJ)
0
J
Eon2,300A
200
150
100
Eoff,300A
50
Eoff,150A
Eon2,150A
Eon2,75A
Eoff,75A
4
G
TJ = 125°C
20
15
10
TJ = 25°C
5
120
V
= 800V
CE
V
= +15V
GE
T = 125°C
8
12
16
20
RG, GATE RESISTANCE (OHMS)
FIGURE 15, Switching Energy Losses vs Gate Resistance
SWITCHING ENERGY LOSSES (mJ)
SWITCHING ENERGY LOSSES (mJ)
052-6291 Rev A 1 - 2008
300
0
25
0
40
80
120
160
200
240
ICE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 14, Turn-Off Energy Loss vs Collector Current
0
50
100
150
200
250
300
ICE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
0
V
= 800V
CE
V
= +15V
GE
R = 2.2Ω
0
0
250
0
50
100
150
200
250
ICE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 12, Current Fall Time vs Collector Current
30
V
= 800V
CE
V
= +15V
GE
R = 2.2Ω
100
Eon2,300A
G
80
60
40
Eoff,300A
Eon2,150A
20
0
0
Eoff,150A
Eon2,75A
Eoff,75A
25
50
75
100
125
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 16, Switching Energy Losses vs Junction Temperature
Typical Performance Curves
APT150GT120JR
500
IC, COLLECTOR CURRENT (A)
C, CAPACITANCE (pF)
100,000
Cies
10,000
1,000
Coes
Cres
100
400
300
200
100
0
0 100 200 300 400 500 600 700 800 900
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
FIGURE 17, Capacitance vs Collector-To-Emitter Voltage
0
200 400 600 800 1000 1200 1400
VCE, COLLECTOR-TO-EMITTER VOLTAGE
FIGURE 18, Minimum Switching Safe Operating Area
D = 0.9
0.14
0.12
0.7
0.1
0.5
0.08
0.06
Note:
PDM
0.3
0.04
t2
t
Duty Factor D = 1/t2
Peak TJ = PDM x ZθJC + TC
0.1
0.02
0
0.05
SINGLE PULSE
10-3
10-2
10-1
0.1
1
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
10-4
.0315
.0175
TC (°C)
.0897
.7078
.0282
ZEXT
TJ (°C)
12.16
ZEXT are the external thermal
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
FMAX, OPERATING FREQUENCY (kHz)
30
Dissipated Power
(Watts)
t1
25
75°C
T = 125°C
J
T = 75°C
C
D = 50 %
V
= 800V
CE
R = 4.7Ω
G
20
10
Fmax = min (fmax, fmax2)
0.05
fmax1 =
td(on) + tr + td(off) + tf
15
100°C
fmax2 =
Pdiss - Pcond
Eon2 + Eoff
Pdiss =
TJ - TC
RθJC
10
5
0
0 10
20 30 40 50 60 70 80 90 100
IC, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector Current
052-6291 Rev A 1 - 2008
ZθJC, THERMAL IMPEDANCE (°C/W)
0.16
APT150GT120JR
10%
Gate Voltage
TJ = 125°C
td(on)
APT100DQ120
90%
tr
V CE
IC
V CC
Collector Current
5%
10%
5%
Collector Voltage
A
Switching Energy
D.U.T.
Figure 22, Turn-on Switching Waveforms and Definitions
Figure 21, Inductive Switching Test Circuit
90%
TJ = 125°C
Gate Voltage
Collector Voltage
90%
td(off)
tf
10%
0
Collector Current
Switching Energy
Figure 23, Turn-off Switching Waveforms and Definitions
SOT-227 (ISOTOP®) Package Outline
11.8 (.463)
12.2 (.480)
31.5 (1.240)
31.7 (1.248)
7.8 (.307)
8.2 (.322)
r = 4.0 (.157)
(2 places)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
25.2 (0.992)
0.75 (.030) 12.6 (.496) 25.4 (1.000)
0.85 (.033) 12.8 (.504)
4.0 (.157)
4.2 (.165)
(2 places)
3.3 (.129)
3.6 (.143)
14.9 (.587)
15.1 (.594)
1.95 (.077)
2.14 (.084)
* Emitter/Anode
052-6291 Rev A 1 - 2008
30.1 (1.185)
30.3 (1.193)
Collector/Cathode
* Emitter/Anode terminals are
shorted internally. Current
handling capability is equal
for either Emitter/Anode terminal.
38.0 (1.496)
38.2 (1.504)
* Emitter/Anode
Gate
)
Dimensions in Millimeters and (Inches
Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583
4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 and foreign patents. US and Foreign patents pending. All Rights Reserved.