APTGF90TDU60PG Triple dual Common Source VCES = 600V IC = 90A @ Tc = 80°C NPT IGBT Power Module G1 G3 E1 E3 G5 E5 E3/E4 E1/E2 E5/E6 E2 E4 E6 G2 G4 G6 C2 C4 C1 C6 C3 G1 E1/E2 C2 E1 C5 G5 G3 E3/E4 E3 E5/E6 E5 E2 E4 E6 G2 G4 G6 C4 C6 Features • Non Punch Through (NPT) Fast IGBT® - Low voltage drop - Low tail current - Switching frequency up to 100 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Very low (12mm) profile • Easy paralleling due to positive TC of VCEsat • Each leg can be easily paralleled to achieve a dual common source configuration of three times the current capability • RoHS compliant Absolute maximum ratings Symbol VCES Parameter Collector - Emitter Breakdown Voltage IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation RBSOA Reverse Bias Safe Operating Area Tc = 25°C Max ratings 600 110 90 315 ±20 416 Tj = 150°C 200A @ 600V Tc = 25°C Tc = 80°C Tc = 25°C Unit V A July, 2006 C5 C3 V W These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-6 APTGF90TDU60PG – Rev 1 C1 Application • AC Switches • Switched Mode Power Supplies • Uninterruptible Power Supplies APTGF90TDU60PG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Zero Gate Voltage Collector Current VCE(sat) Collector Emitter saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Dynamic Characteristics Symbol Cies Coes Cres Qg Qge Qgc Td(on) Tr Td(off) Tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Emitter Charge Gate – Collector Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Td(on) Tr Turn-on Delay Time Rise Time Td(off) Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Diode ratings and characteristics Symbol Characteristic VRRM IRM IF VF Min Test Conditions VGE = 0V VCE = 25V f = 1MHz Min Reverse Recovery Time Qrr Reverse Recovery Charge Unit 5 ±150 V nA Max Unit VR=600V Tc = 70°C IF = 60A VR = 400V di/dt =200A/µs ns ns 170 40 4.3 mJ 3.5 Typ Max Unit V 250 500 Tj = 125°C 60 1.6 1.9 1.4 Tj = 25°C 130 Tj = 125°C Tj = 25°C 170 220 Tj = 125°C 920 www.microsemi.com V nC 26 25 Tj = 25°C Tj = 125°C IF = 60A IF = 120A µA pF 600 IF = 60A trr Typ 4300 470 400 330 290 200 26 25 150 Max 250 500 2.5 30 Min DC Forward Current Diode Forward Voltage 3 Inductive Switching (25°C) VGE = 15V VBus = 400V IC = 90A RG = 5 Ω Inductive Switching (125°C) VGE = 15V VBus = 400V IC = 90A RG = 5 Ω VGE = 15V Tj = 125°C VBus = 400V IC = 90A Tj = 125°C RG = 5 Ω Maximum Peak Repetitive Reverse Voltage Maximum Reverse Leakage Current 2.0 2.2 VGE = 15V VBus = 300V IC = 90A Test Conditions Typ µA A 1.8 V July, 2006 ICES Test Conditions VGE = 0V Tj = 25°C VCE = 600V Tj = 125°C T VGE =15V j = 25°C IC = 90A Tj = 125°C VGE = VCE, IC = 1mA VGE = 20 V, VCE = 0V ns nC 2-6 APTGF90TDU60PG – Rev 1 Symbol Characteristic APTGF90TDU60PG Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Min IGBT Diode Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink M6 2500 -40 -40 -40 3 Typ Max 0.3 0.9 Unit °C/W V 150 125 100 5 250 °C N.m g SP6-P Package outline (dimensions in mm) 5 places (3:1) www.microsemi.com 3-6 APTGF90TDU60PG – Rev 1 July, 2006 See application note 1902 - Mounting Instructions for SP6-P (12mm) Power Modules on www.microsemi.com APTGF90TDU60PG Typical Performance Curve Output characteristics (VGE=15V) Output Characteristics (VGE=10V) 300 250µs Pulse Test < 0.5% Duty cycle 300 TJ=-55°C 250 Ic, Collector Current (A) T J=25°C 200 150 TJ=125°C 100 50 250µs Pulse Test < 0.5% Duty cycle 250 200 T J=25°C 150 100 TJ=125°C 50 0 0 0 1 2 3 VCE, Collector to Emitter Voltage (V) 0 4 1 2 Gate Charge 250µs Pulse Test < 0.5% Duty cycle TJ=-55°C VGE, Gate to Emitter Voltage (V) Ic, Collector Current (A) 4 18 250 200 150 100 TJ=25°C 50 TJ=125°C TJ=-55°C 0 1 2 3 4 5 6 7 8 9 VGE, Gate to Emitter Voltage (V) On state Voltage vs Gate to Emitter Volt. 8 TJ = 25°C 250µs Pulse Test < 0.5% Duty cycle 7 6 Ic=180A 5 4 3 Ic=90A 2 Ic=45A 1 0 6 8 10 12 14 VGE, Gate to Emitter Voltage (V) 14 VCE=300V 12 10 VCE =480V 8 6 4 2 0 0 50 100 150 200 250 Gate Charge (nC) 300 350 On state Voltage vs Junction Temperature 4 3.5 Ic=180A 3 2.5 Ic=90A 2 1.5 Ic=45A 1 250µs Pulse Test < 0.5% Duty cycle VGE = 15V 0.5 0 -50 16 VCE=120V IC = 90A TJ = 25°C 16 10 VCE, Collector to Emitter Voltage (V) 0 VCE, Collector to Emitter Voltage (V) 3 VCE, Collector to Emitter Voltage (V) Transfer Characteristics 300 -25 0 25 50 75 100 125 TJ, Junction Temperature (°C) Breakdown Voltage vs Junction Temp. DC Collector Current vs Case Temperature 140 1.10 1.00 0.90 0.80 0.70 -50 -25 0 25 50 75 100 125 120 100 July, 2006 1.20 Ic, DC Collector Current (A) Collector to Emitter Breakdown Voltage (Normalized) T J=-55°C 80 60 40 20 0 -50 TJ, Junction Temperature (°C) -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) www.microsemi.com 4-6 APTGF90TDU60PG – Rev 1 Ic, Collector Current (A) 350 APTGF90TDU60PG Turn-Off Delay Time vs Collector Current V GE = 15V 30 25 Tj = 25°C VCE = 400V RG = 5Ω 20 15 25 50 75 100 125 150 td(off), Turn-Off Delay Time (ns) 250 VGE=15V, TJ=125°C 200 150 100 50 25 ICE, Collector to Emitter Current (A) Current Rise Time vs Collector Current VGE=15V, T J=125°C 20 125 150 60 TJ = 125°C 40 20 T J = 25°C 0 50 75 100 125 ICE, Collector to Emitter Current (A) 150 25 Turn-On Energy Loss vs Collector Current Eoff, Turn-off Energy Loss (mJ) 8 VCE = 400V RG = 5Ω 6 TJ=125°C, VGE=15V 4 T J=25°C, VGE=15V 2 0 0 25 50 75 100 125 6 VCE = 400V VGE = 15V RG = 5Ω 5 4 TJ = 25°C 2 1 0 150 0 25 Switching Energy Losses (mJ) Eoff, 180A Eoff, 90A Eoff, 45A 4 Eon, 45A 0 10 20 30 40 75 100 125 150 Switching Energy Losses vs Junction Temp. Eon, 90A 0 50 ICE, Collector to Emitter Current (A) Eon, 180A 8 TJ = 125°C 3 Switching Energy Losses vs Gate Resistance 12 150 Turn-Off Energy Loss vs Collector Current ICE, Collector to Emitter Current (A) VCE = 400V VGE = 15V TJ= 125°C 50 75 100 125 ICE, Collector to Emitter Current (A) 50 10 V CE = 400V V GE = 15V R G = 5Ω 8 Eon, 180A Eoff, 180A 6 July, 2006 25 Eon, Turn-On Energy Loss (mJ) 100 VCE = 400V, VGE = 15V, RG = 5Ω tf, Fall Time (ns) tr, Rise Time (ns) VCE = 400V RG = 5Ω 0 Switching Energy Losses (mJ) 75 Current Fall Time vs Collector Current 80 40 16 50 ICE, Collector to Emitter Current (A) 80 60 VGE=15V, TJ=25°C VCE = 400V R G = 5Ω Eon, 90A 4 Eoff, 90A 2 Eoff, 45A Eon, 45A 0 Gate Resistance (Ohms) www.microsemi.com 0 25 50 75 100 TJ, Junction Temperature (°C) 125 5-6 APTGF90TDU60PG – Rev 1 td(on), Turn-On Delay Time (ns) Turn-On Delay Time vs Collector Current 35 APTGF90TDU60PG Capacitance vs Collector to Emitter Voltage Reverse Bias Safe Operating Area 10000 250 IC, Collector Current (A) C, Capacitance (pF) Cies 1000 Coes Cres 100 200 150 100 50 0 0 10 20 30 40 VCE, Collector to Emitter Voltage (V) 50 0 200 400 600 800 VCE, Collector to Emitter Voltage (V) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.3 0.25 0.9 0.7 0.2 0.15 0.1 0.5 0.3 0.1 0.05 0 0.00001 0.05 Single Pulse 0.0001 0.001 0.01 0.1 Rectangular Pulse Duration (Seconds) Fmax, Operating Frequency (kHz) Thermal Impedance (°C/W) 0.35 200 1 10 Operating Frequency vs Collector Current ZVS 160 120 ZCS V CE = 400V D = 50% R G = 5Ω TJ = 125°C TC = 75°C 80 40 Hard switching 0 40 60 80 100 IC , Collector Current (A) 120 Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6-6 APTGF90TDU60PG – Rev 1 July, 2006 20