AGILENT ATF

0.5 – 12 GHz General Purpose
Gallium Arsenide FET
Technical Data
ATF-10736
Features
Description
• High Associated Gain:
13.0␣ dB Typical at 4␣ GHz
The ATF-10736 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor
housed in a cost effective
microstrip package. Its noise
figure makes this device appropriate for use in the gain stages of
low noise amplifiers operating in
the 0.5-12 GHz frequency range.
• Low Bias:
VDS = 2 V, IDS = 25␣ mA
• High Output Power:
20.0␣ dBm typical P 1 dB at 4␣ GHz
• Low Noise Figure:
1.2␣ dB Typical at 4␣ GHz
• Cost Effective Ceramic
Microstrip Package
• Tape-and-Reel Packaging
Option Available [1]
36 micro-X Package
This GaAs FET device has a
nominal 0.3 micron gate length
using airbridge interconcnects
between drain fingers. Total gate
periphery is 500 microns. Proven
gold based metallization systems
and nitride passivation assure a
rugged, reliable device.
Electrical Specifications, TA = 25°C
Symbol
NFO
GA
Parameters and Test Conditions
Optimum Noise Figure: VDS = 2 V, IDS = 25 mA
Gain @ NFO; VDS = 2 V, IDS = 25 mA
Units
f = 2.0 GHz
f = 4.0 GHz
f = 6.0 GHz
dB
dB
dB
f = 2.0 GHz
f = 4.0 GHz
f = 6.0 GHz
dB
dB
dB
Min.
Typ. Max.
0.9
1.2
1.4
12.0
1.4
16.5
13.0
10.5
P1 dB
Power Output @ 1 dB Gain Compression
VDS = 4 V, IDS = 70 mA
f = 4.0 GHz
dBm
20.0
G1 dB
1 dB Compressed Gain: VDS = 4 V, IDS = 70 mA
f = 4.0 GHz
dB
12.0
gm
Transconductance: VDS = 2 V, VGS = 0 V
IDSS
Saturated Drain Current: VDS = 2 V, VGS = 0 V
VP
Pinchoff Voltage: VDS = 2 V, IDS = 1 mA
mmho
70
140
mA
70
130
180
V
-4.0
-1.3
-0.5
Note:
1. Refer to PACKAGING section, “Tape-and-Reel Packaging for Surface Mount Semiconductors.”
5-29
5965-8698E
ATF-10736 Absolute Maximum Ratings
Symbol
VDS
VGS
VGD
IDS
PT
TCH
TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Gate-Drain Voltage
Drain Current
Total Power Dissipation [2,3]
Channel Temperature
Storage Temperature[4]
Absolute
Maximum[1]
+5
-4
-7
IDSS
430
175
-65 to +175
Units
V
V
V
mA
mW
°C
°C
θjc = 350°C/W; TCH = 150°C
1µm Spot Size[5]
Thermal Resistance:
Liquid Crystal Measurement:
Part Number Ordering Information
Part Number
Devices Per Reel
Reel Size
ATF-10736-TR1
ATF-10736-STR
1000
10
7"
STRIP
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. TCASE TEMPERATURE = 25°C.
3. Derate at 2.9 mW/°C for
TCASE > 25°C.
4. Storage above +150°C may tarnish
the leads of this package difficult to
solder into a circuit. After a device
has been soldered into a circuit, it
may be safely stored up to 175°C.
5. The small spot size of this technique results in a higher, though
more accurate determination of θjc
than do alternate methods. See
MEASUREMENTS section for
more information.
For more information, see “Tape and Reel Packaging for Semiconductor Devices.”
ATF-10736 Noise Parameters: VDS = 2 V, IDS = 25 mA
Γopt
Freq.
GHz
NFO
dB
Mag
Ang
RN/50
1.0
2.0
4.0
6.0
8.0
0.8
0.9
1.2
1.4
1.7
0.88
0.75
0.48
0.46
0.53
41
85
159
-122
-71
0.52
0.27
0.08
0.08
0.43
ATF-10736 Typical Performance, TA = 25°C
30
15
25
25
12
1.5
9
1.0
6
NFO
0.5
0
2.0
20
15
|S21|2
10
MAG
5
4.0
6.0
8.0 10.0 12.0
FREQUENCY (GHz)
Figure 1. Optimum Noise Figure and
Associated Gain vs. Frequency.
VDS = 2V, IDS = 25 mA, TA = 25°C.
0
0.5
MSG
20
MSG
GAIN (dB)
2.0
GA (dB)
30
GAIN (dB)
NFO (dB)
GA
18
15
|S21|2
MAG
MSG
10
5
1.0
2.0
4.0
6.0 8.0 12.0
FREQUENCY (GHz)
Figure 2. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
VDS = 2 V, IDS = 25 mA.
5-30
0
0.5
1.0
2.0
4.0
6.0 8.0 12.0
FREQUENCY (GHz)
Figure 3. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
VDS = 4 V, IDS = 70 mA.
Typical Scattering Parameters, Common Source, Z O = 50 Ω, TA = 25°C, VDS = 2 V, IDS␣ =␣ 25 mA
Freq.
GHz
0.5
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
S11
Mag.
.96
.92
.77
.59
.49
.43
.49
.57
.68
.73
.77
.82
.85
Ang.
-20
-40
-76
-107
-136
-179
138
106
81
62
47
36
22
dB
15.4
15.2
13.8
12.5
11.2
10.0
8.6
7.3
5.6
4.2
3.0
1.0
-0.2
S21
Mag.
5.90
5.77
4.92
4.20
3.64
3.15
2.74
2.32
1.92
1.62
1.41
1.12
0.98
Ang.
162
144
109
83
57
32
8
-13
-32
-50
-66
-81
-97
dB
-32.4
-26.7
-21.3
-20.0
-17.3
-15.5
-14.9
-14.8
-14.7
-14.8
-14.8
-14.6
-14.5
S12
Mag.
.024
.046
.086
.111
.137
.167
.179
.183
.185
.183
.182
.186
.189
S22
Ang.
77
66
52
40
24
9
-5
-18
-33
-40
-52
-67
-75
Mag.
.50
.48
.39
.33
.26
.14
.05
.19
.33
.42
.46
.50
.51
Ang.
-10
-21
-34
-45
-61
-65
22
60
57
46
38
27
15
Typical Scattering Parameters, Common Emitter, Z O = 50 Ω, TA = 25°C, VDS = 4 V, IDS␣ =␣ 70 mA
Freq.
GHz
0.5
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
S11
Mag.
.90
.79
.57
.43
.36
.35
.47
.65
.77
.83
.86
.87
.91
Ang.
-32
-53
-96
-129
-163
156
110
78
58
44
30
16
1
dB
19.0
18.0
15.5
13.3
11.6
10.1
8.8
7.0
5.1
3.5
2.4
1.1
0.1
S21
Mag.
8.95
7.96
5.99
4.60
3.78
3.21
2.76
2.23
1.80
1.50
1.32
1.13
0.99
Ang.
147
128
90
64
39
16
-11
-36
-56
-72
-88
-106
-123
A model for this device is available in the DEVICE MODELS section.
5-31
dB
-34.9
-28.6
-22.5
-19.5
-17.3
-15.6
-14.5
-14.2
-14.1
-14.2
-14.5
-14.8
-15.3
S12
Mag.
.018
.037
.075
.106
.136
.166
.189
.196
.198
.195
.188
.182
.171
S22
Ang.
77
70
56
43
31
14
-5
-23
-38
-48
-64
-77
-91
Mag.
.40
.38
.34
.31
.28
.22
.15
.28
.42
.51
.55
.60
.65
Ang.
-7
-17
-38
-50
-51
-45
-4
35
37
33
26
18
7
36 micro-X Package Dimensions
2.15
(0.085)
SOURCE
2.11 (0.083) DIA.
4
107
DRAIN
3
GATE 1
SOURCE
1.45 ± 0.25
(0.057 ± 0.010)
0.56
(0.022)
2
2.54
(0.100)
0.508
(0.020)
0.15 ± 0.05
(0.006 ± 0.002)
4.57 ± 0.25
0.180 ± 0.010
Notes:
1. Dimensions are in millimeters (inches)
2. Tolerances: in .xxx = ± 0.005
mm .xx = ± 0.13
5-32