PD - 96396A
AUTOMOTIVE GRADE
AUIRFS4010
AUIRFSL4010
Features
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
l
l
l
l
l
l
l
HEXFET® Power MOSFET
D
G
S
VDSS
RDS(on) typ.
max.
ID
100V
3.9m:
4.7m:
180A
Description
D
D
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per
silicon area. Additional features of this design are a 175°C
junction operating temperature, fast switching speed and
improved repetitive avalanche rating . These features
combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a
wide variety of other applications.
S
G
G
D2Pak
AUIRFS4010
Absolute Maximum Ratings
D
S
TO-262
AUIRFSL4010
G
D
S
Gate
Drain
Source
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications
is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal
resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA)
is 25°C, unless otherwise specified.
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
Max.
Units
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
180
127
A
Pulsed Drain Current
Maximum Power Dissipation
720
375
W
2.5
± 20
318
See Fig. 14, 15, 22a, 22b
W/°C
V
mJ
A
c
VGS
EAS
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
IAR
EAR
Avalanche Current
Repetitive Avalanche Energy
dv/dt
TJ
TSTG
c
e
Peak Diode Recovery
Operating Junction and
Storage Temperature Range
d
c
mJ
31
-55 to + 175
V/ns
°C
300
Soldering Temperature, for 10 seconds (1.6mm from case)
Thermal Resistance
Parameter
jk
RθJC
Junction-to-Case
RθJA
Junction-to-Ambient (PCB Mount)
i
Typ.
Max.
Units
–––
–––
0.40
40
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
11/1/11
AUIRFS/SL4010
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
V(BR)DSS
ΔV(BR)DSS/ΔTJ
RDS(on)
VGS(th)
gfs
RG
IDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Internal Gate Resistance
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min. Typ. Max. Units
100
–––
–––
2.0
189
–––
–––
–––
–––
–––
–––
0.10
3.9
–––
–––
2.0
–––
–––
–––
–––
–––
–––
4.7
4.0
–––
–––
20
250
100
-100
Conditions
V VGS = 0V, ID = 250μA
V/°C Reference to 25°C, ID = 5mA
mΩ VGS = 10V, ID = 106A
V VDS = VGS, ID = 250μA
S VDS = 25V, ID = 106A
f
c
Ω
μA
nA
VDS = 100V, VGS = 0V
VDS = 100V, VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Qg
Qgs
Qgd
Qsync
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss eff. (ER)
Coss eff. (TR)
Parameter
Min. Typ. Max. Units
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Qg - Qgd)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance (Energy Related)
Effective Output Capacitance (Time Related)
g
h
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
143
38
50
93
21
86
100
77
9575
660
270
757
1112
215
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
nC
ns
Conditions
ID = 106A
VDS = 50V
VGS = 10V
ID = 106A, VDS =0V, VGS = 10V
VDD = 65V
ID = 106A
RG = 2.7Ω
VGS = 10V
VGS = 0V
VDS = 50V
ƒ = 1.0MHz See Fig.5
VGS = 0V, VDS = 0V to 80V See Fig.11
VGS = 0V, VDS = 0V to 80V
f
f
pF
h
g
Diode Characteristics
Symbol
IS
Parameter
Continuous Source Current
VSD
trr
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
ton
Reverse Recovery Current
Forward Turn-On Time
ISM
c
Notes:
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.057mH
RG = 25Ω, IAS = 106A, VGS =10V. Part not recommended for use
above this value .
ISD ≤ 106A, di/dt ≤ 1319A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
2
Min. Typ. Max. Units
–––
–––
180
A
–––
–––
720
Conditions
MOSFET symbol
showing the
integral reverse
D
G
p-n junction diode.
TJ = 25°C, IS = 106A, VGS = 0V
TJ = 25°C
VR = 85V,
TJ = 125°C
IF = 106A
di/dt = 100A/μs
TJ = 25°C
S
f
––– –––
1.3
V
–––
72
–––
ns
–––
81
–––
––– 210 –––
nC
TJ = 125°C
––– 268 –––
–––
5.3
–––
A TJ = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
f
Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS .
Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application note #AN-994.
Rθ is measured at TJ approximately 90°C.
RθJC value shown is at time zero.
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AUIRFS/SL4010
Qualification Information†
Automotive
(per AEC-Q101)
Qualification Level
Moisture Sensitivity Level
††
Comments:
This part
number(s) passed
Automotive qualification. IR’s Industrial and
Consumer qualification level is granted by
extension of the higher Automotive level.
MSL1
3L-D2 PAK
3L-TO-262
N/A
†††
Machine Model
Class M4(+/- 800V )
(per AEC-Q101-002)
†††
ESD
Human Body Model
Class H3A(+/- 6000V )
(per AEC-Q101-001)
†††
Charged Device Model
RoHS Compliant
Class C5(+/- 2000V )
(per AEC-Q101-005)
Yes
†
Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/
††
Exceptions (if any) to AEC-Q101 requirements are noted in the qualification report.
†††
Highest passing voltage
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3
AUIRFS/SL4010
1000
1000
VGS
15V
10V
8.0V
7.0V
5.0V
4.5V
4.3V
4.0V
100
BOTTOM
BOTTOM
100
10
1
≤60μs PULSE WIDTH
Tj = 25°C
4.0V
4.0V
0.1
0.1
10
1
10
0.1
100
Fig 1. Typical Output Characteristics
1
10
100
2.5
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
Tj = 175°C
Fig 2. Typical Output Characteristics
1000
100
TJ = 175°C
T J = 25°C
10
1
VDS = 50V
≤60μs PULSE WIDTH
0.1
2
3
4
5
6
1.0
-60 -40 -20 0 20 40 60 80 100120140160180
Fig 4. Normalized On-Resistance vs. Temperature
14.0
VGS, Gate-to-Source Voltage (V)
C oss = C ds + C gd
Ciss
Coss
1000
1.5
T J , Junction Temperature (°C)
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
10000
2.0
0.5
Fig 3. Typical Transfer Characteristics
100000
ID = 106A
VGS = 10V
7
VGS, Gate-to-Source Voltage (V)
C, Capacitance (pF)
≤60μs PULSE WIDTH
V DS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
Crss
100
ID= 106A
12.0
10.0
VDS= 80V
VDS= 50V
8.0
6.0
4.0
2.0
0.0
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
4
VGS
15V
10V
8.0V
7.0V
5.0V
4.5V
4.3V
4.0V
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
0
25
50
75 100 125 150 175 200 225
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
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AUIRFS/SL4010
10000
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
1000
T J = 175°C
100
T J = 25°C
10
OPERATION IN THIS AREA
LIMITED BY R DS(on)
1000
1msec
100
10msec
10
DC
1
Tc = 25°C
Tj = 175°C
Single Pulse
VGS = 0V
0.1
1.0
0.2
0.6
1.0
1.4
1
1.8
180
ID, Drain Current (A)
160
140
120
100
80
60
40
20
0
75
100
125
150
175
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
200
50
100
1000
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
25
10
VDS, Drain-to-Source Voltage (V)
VSD, Source-to-Drain Voltage (V)
130
Id = 5mA
125
120
115
110
105
100
95
-60 -40 -20 0 20 40 60 80 100120140160180
T J , Temperature ( °C )
T C , Case Temperature (°C)
Fig 9. Maximum Drain Current vs.
Case Temperature
Fig 10. Drain-to-Source Breakdown Voltage
4.0
EAS , Single Pulse Avalanche Energy (mJ)
1400
3.5
ID
12.5A
17A
BOTTOM 106A
1200
3.0
Energy (μJ)
100μsec
TOP
1000
2.5
2.0
1.5
1.0
0.5
0.0
800
600
400
200
0
0
20
40
60
80
100
VDS, Drain-to-Source Voltage (V)
Fig 11. Typical COSS Stored Energy
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120
25
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
Fig 12. Maximum Avalanche Energy vs. DrainCurrent
5
AUIRFS/SL4010
Thermal Response ( Z thJC ) °C/W
1
D = 0.50
0.1
0.20
0.10
0.05
0.02
0.01
0.01
τJ
R1
R1
τJ
τ1
0.001
τC
τ2
τ1
τ2
Ci= τi/Ri
Ci i/Ri
SINGLE PULSE
( THERMAL RESPONSE )
0.0001
1E-006
R2
R2
1E-005
0.0001
τ
Ri (°C/W)
0.17537
0.22547
τi (sec)
0.000343
0.006073
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
Avalanche Current (A)
Duty Cycle = Single Pulse
100
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔTj = 150°C and
Tstart =25°C (Single Pulse)
0.01
0.05
10
0.10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔΤ j = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 14. Typical Avalanche Current vs.Pulsewidth
350
300
EAR , Avalanche Energy (mJ)
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 22a, 22b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. ΔT = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
TOP
Single Pulse
BOTTOM 1.0% Duty Cycle
ID = 106A
250
200
150
100
50
0
25
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Fig 15. Maximum Avalanche Energy vs. Temperature
6
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4.5
35
4.0
30
3.5
25
3.0
20
2.5
ID = 250μA
2.0
ID = 1.0A
IRR (A)
VGS(th) , Gate threshold Voltage (V)
AUIRFS/SL4010
ID = 1.0mA
IF = 70A
V R = 85V
TJ = 25°C
TJ = 125°C
15
10
1.5
5
1.0
0
-75 -50 -25
0
25 50 75 100 125 150 175
0
200
T J , Temperature ( °C )
600
800
1000
Fig. 17 - Typical Recovery Current vs. dif/dt
Fig 16. Threshold Voltage vs. Temperature
1100
35
IF = 106A
V R = 85V
30
IF = 70A
V R = 85V
1000
900
TJ = 25°C
TJ = 125°C
25
TJ = 25°C
TJ = 125°C
800
20
QRR (A)
IRR (A)
400
diF /dt (A/μs)
15
700
600
500
400
10
300
5
200
100
0
0
200
400
600
800
0
1000
200
400
600
800
1000
diF /dt (A/μs)
diF /dt (A/μs)
Fig. 19 - Typical Stored Charge vs. dif/dt
Fig. 18 - Typical Recovery Current vs. dif/dt
1100
IF = 106A
V R = 85V
1000
900
TJ = 25°C
TJ = 125°C
QRR (A)
800
700
600
500
400
300
200
0
200
400
600
800
1000
diF /dt (A/μs)
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Fig. 20 - Typical Stored Charge vs. dif/dt
7
AUIRFS/SL4010
Driver Gate Drive
D.U.T
-
-
-
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
+
RG
• dv/dt controlled by RG
• Driver same type as D.U.T.
• I SD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
P.W.
Period
VGS=10V
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
D=
Period
P.W.
+
V DD
+
-
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor
InductorCurrent
Curent
ISD
Ripple ≤ 5%
*
VGS = 5V for Logic Level Devices
Fig 21. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
V(BR)DSS
15V
DRIVER
L
VDS
tp
D.U.T
RG
VGS
20V
+
V
- DD
IAS
A
0.01Ω
tp
I AS
Fig 22a. Unclamped Inductive Test Circuit
RD
V DS
Fig 22b. Unclamped Inductive Waveforms
VDS
90%
VGS
D.U.T.
RG
+
- V DD
V10V
GS
10%
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
td(on)
Fig 23a. Switching Time Test Circuit
tr
t d(off)
Fig 23b. Switching Time Waveforms
Id
Current Regulator
Same Type as D.U.T.
Vds
Vgs
50KΩ
12V
tf
.2μF
.3μF
D.U.T.
+
V
- DS
Vgs(th)
VGS
3mA
IG
ID
Current Sampling Resistors
8
Fig 24a. Gate Charge Test Circuit
Qgs1 Qgs2
Qgd
Qgodr
Fig 24b. Gate Charge Waveform
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AUIRFS/SL4010
D2Pak Package Outline (Dimensions are shown in millimeters (inches))
D2Pak Part Marking Information
Part Number
AUFS4010
YWWA
IR Logo
XX
or
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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9
AUIRFS/SL4010
TO-262 Package Outline (
Dimensions are shown in millimeters (inches))
TO-262 Part Marking Information
Part Number
AUFSL4010
YWWA
IR Logo
XX
or
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
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AUIRFS/SL4010
D2Pak (TO-263AB) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TRR
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
FEED DIRECTION 1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
11.60 (.457)
11.40 (.449)
0.368 (.0145)
0.342 (.0135)
15.42 (.609)
15.22 (.601)
24.30 (.957)
23.90 (.941)
TRL
10.90 (.429)
10.70 (.421)
1.75 (.069)
1.25 (.049)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
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60.00 (2.362)
MIN.
26.40 (1.039)
24.40 (.961)
3
30.40 (1.197)
MAX.
4
11
AUIRFS/SL4010
Ordering Information
Base part
Package Type
AUIRFSL4010
AUIRFS4010
TO-262
D2Pak
12
Standard Pack
Form
Tube
Tube
Tape and Reel Left
Tape and Reel Right
Complete Part Number
Quantity
50
50
800
800
AUIRFSL4010
AUIRFS4010
AUIRFS4010TRL
AUIRFS4010TRR
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AUIRFS/SL4010
IMPORTANT NOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve
the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services
at any time and to discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow
automotive industry and / or customer specific requirements with regards to product discontinuance and process change
notification. All products are sold subject to IR’s terms and conditions of sale supplied at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR’s
standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this
warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily
performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products
and applications using IR components. To minimize the risks with customer products and applications, customers should
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Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for that product or
service voids all express and any implied warranties for the associated IR product or service and is an unfair and deceptive
business practice. IR is not responsible or liable for any such statements.
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body, or in other applications intended to support or sustain life, or in any other application in which the failure of the IR product
could create a situation where personal injury or death may occur. Should Buyer purchase or use IR products for any such
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requirements in connection with such use.
IR products are neither designed nor intended for use in automotive applications or environments unless the specific IR
products are designated by IR as compliant with ISO/TS 16949 requirements and bear a part number including the designation
“AU”. Buyers acknowledge and agree that, if they use any non-designated products in automotive applications, IR will not be
responsible for any failure to meet such requirements.
For technical support, please contact IR’s Technical Assistance Center
http://www.irf.com/technical-info/
WORLD HEADQUARTERS:
101 N. Sepulveda Blvd., El Segundo, California 90245
Tel: (310) 252-7105
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13