AWT6108 GSM850/GSM900/DCS/PCS Quad Band Power Amplifier Module With Integrated Power Control PRELIMINARY DATA SHEET - Rev 1.0 FEATURES InGaP HBT Technology Integrated Power Control (CMOS) Quad Band Applications +35 dBm GSM Output Power at 3.5 V +33 dBm DCS/PCS Output Power at 3.5 V 55% GSM PAE 50% DCS/PCS PAE Small Footprint: 7 x 10mm Low Profile: 1.4mm Power Control Range: >50 dB GPRS Capable (Class 12) Moisture Sensitivity Level (MSL) 3 at 260 °C AW T 610 20 Pin 7mm x 10mm Surface Mount Module APPLICATIONS GSM850/GSM900/DCS/PCS Handsets Dual/Tri/Quad Band PDA 8 PRODUCT DESCRIPTION This quad band power amplifier module is designed to support dual, tri and quad band applications. The module includes an integrated power control scheme that facilitates fast and easy production calibration and reduces the number of external components required to complete a power control function. The amplifiers power control range is typically 55dB, with the output power set by applying an analog voltage to VRAMP. The logical control inputs, TX_EN and BS, are both 1.8 V and 3 V logic compliant. The TX_EN is used to enable the amplifier typically with the TX burst. The BS is used to select which amplifier is enabled. There are two amplifier chains, one to support GSM850/900 bands, the other for DCS/PCS bands. All of the RF ports for this device are internally matched to 50 W. Internal DC blocks are provided at the RF ports. Figure 1: Block Diagram 08/2003 AWT6108 Figure 2: Pinout (X-Ray Top View) Table 1: Pin Description 2 P IN N AM E 1 DCS/PCS_IN 2 BS 3 D E S C R IP T ION P IN N AM E D E S C R IP T ION DCS/PCS RF Input 11 GSM_OUT Band Select Logi c Input 12 GND Ground TX_EN TX Enable Logi c Input 13 GND Ground 4 VBATT Battery Supply Connecti on 14 VCC_OUT 5 VREG Regulated Supply Connecti on 15 GND Ground 6 VRAMP Analog Si gnal Used to Control the Output Power 16 GND Ground 7 GSM_IN GSM850/900 RF Input 17 8 VCC2 VCC Control Input for GSM850/900 PreAmpli fi er 18 GND Ground 9 GND Ground 19 GND Ground 10 GND Ground 20 VCC2 VCC Control Input for DCS/PCS Pre-Ampli fi er GSM850/900 RF Output Contol Voltage Output Whi ch Must be Connected to VCC2, No Decoupli ng DCS/PCS_OUT DCS/PCS RF Output PRELIMINARY DATA SHEET - Rev 1.0 08/2003 AWT6108 ELECTRICAL CHARACTERISTICS Table 2: Absolute Minimum and Maximum Ratings PAR AME T E R MIN M AX U N IT Supply Voltage (VBATT) 0 7 V RF Input Power (RFIN) 0 11 dBm Control Voltage (VRAMP) -0.3 1.8 V Storage Temperature (TSTG) -55 150 °C Stresses in excess of the absolute ratings may cause permanent damage. Functional operation is not implied under these conditions. Exposure to absolute ratings for extended periods of time may adversely affect reliability. Table 3: ESD Ratings PAR AME T E R ME T H OD R AT IN G U N IT ESD Threshold Voltage (RF Ports) HBM >250 V ESD Threshold Voltage (Control Inputs) HBM >2.5 kV Although protection circuitry has been designed into this device, proper precautions should be taken to avoid exposure to electronic discharge (ESD) during handling and mounting. Human body model (HBM) employed is resistance = 1500 W, capacitance = 100 pF. PRELIMINARY DATA SHEET - Rev 1.0 08/2003 3 AWT6108 Table 4: Digital Inputs PAR AME T E R MIN T YP M AX U N IT Logi c Hi gh Voltage (VH) 1.2 - VREG V Logi c Low Voltage (VL) - - 0.5 V Logi c Hi gh Current (I H) - - 30 µA Logi c Low Current (I L) - - 30 µA Table 5: Operating Ranges MIN T YP M AX Case Temperature (TC) -20 - 85 Supply Voltage (VBATT) 3.0 3.5 5.5 V Regulated Voltage (VREG) 2.7 2.8 2.9 V - 6 10 8 30 mA µA Control Voltage for Maxi mum Power (VRAMP_MAX) - - 1.6 V Control Voltage for Mi ni mum Power (VRAMP_MIN) - 0.2 0.25 V Power Supply Leakage Current - 1 10 µA VRAMP Input Capaci tance - 3 - pF VRAMP Input Current - - 10 µA VRAMP = VRAMP_MAX Turn On/Off Ti me - 1 2 µs VRAMP = 0.2V to VRAMP_MAX Duty Cycle - - 50 % Regulated Current (IREG) TX_EN = HIGH TX_EN = LOW U N IT C OMME N T S PAR AME T E R o C VBATT = 5.5 V, VREG = 0V, VRAMP = 0V, TX_EN = LOW, No RF Appli ed The device may be operated safely over these conditions; however, parametric performance is guaranteed only over the conditions defined in the electrical specifications. 4 PRELIMINARY DATA SHEET - Rev 1.0 08/2003 AWT6108 Table 6: Electrical Characteristics for GSM850/900 (VBATT = 3.5 V, VREG = 2.8 V, PIN = 2.0 dBm, Pulse Width = 1154 µs, Duty 25%, ZIN = ZOUT = 50W, TC = 25 °C, VRAMP = 1.6 V, BS = LOW, TX_EN = HIGH) PAR AME T E R MIN T YP M AX U N IT Operati ng Frequency (FO) 824 880 - 849 915 MHz 0 2 5 dBm Output Power (PMAX) 34.5 35 - dBm Freq = 824 to 915 MHz Degraded Output Power 32.0 32.5 - dBm VBATT = 3.0 V, TC = 85 °C, VREG = 2.7 V, PIN = 0 dBm 48 55 - % Forward Isolati on 1 - -37 -30 dBm TX_EN = LOW, PIN = 5 dBm Forward Isolati on 2 - -25 -10 dBm TX_EN = HIGH, VRAMP = 0.2 V, PIN = 5 dBm Cross Isolati on (2FO @ DCS/PCS port) - -30 -20 dBm VRAMP = 0.2 V to VRAMP_MAX - -17 -30 -5 -15 dBm Over all output power levels Input Power PAE @ PMAX Harmoni cs 2fo 3fo Stabi li ty Ruggedness RX Noi se Power Input VSWR C OMME N T S Freq = 824 to 915 MHz VSWR = 8:1 all phases, POUT < 34.5 dBm FOUT < 1GHz FOUT > 1GHz - - -36 -30 - - 10:1 - -86 -83 dBm FTX = 849 MHz, RBW = 100 kHz, FRX = 869 to 894 MHz, POUT < 34.5 dBm - -81 -77 dBm FTX = 915 MHz, RBW = 100 kHz, FRX = 925 to 935 MHz, POUT < 34.5 dBm - -86 -83 dBm FTX = 915 MHz, RBW = 100 kHz, FRX = 935 to 960 MHz, POUT < 34.5 dBm - - 2.5:1 dBm All load phases, POUT < 34.5 dBm Over all output power levels PRELIMINARY DATA SHEET - Rev 1.0 08/2003 5 AWT6108 Table 7: Electrical Characteristics for DCS/PCS (VBATT = 3.5 V, VREG = 2.8 V, PIN = 2.0 dBm, Pulse Width = 1154 µs, Duty 25%, ZIN = ZOUT = 50W, TC = 25 °C, VRAMP = 1.6 V, BS = HIGH, TX_EN = HIGH) PAR AME T E R MIN T YP M AX U N IT Operati ng Frequency (FO) 1710 1850 - 1785 1910 MHz Input Power 0 2 5 dBm Output Power (PMAX) 32 33 - dBm 29.5 30.5 - dBm VBATT = 3.0 V, TC = 85 °C, VREG = 2.7 V, PIN = 0 dBm 45 50 - % Freq = 1710 to 1910 MHz Forward Isolati on 1 - -37 -30 dBm TX_EN = LOW, PIN = 5 dBm Forward Isolati on 2 - -17 -10 dBm TX_EN = HIGH, VRAMP = 0.2 V, PIN = 5 dBm Harmoni cs 2fo 3fo - -12 -30 -5 -15 dBm Over all output power levels Degraded Output Power PAE @ PMAX Stabi li ty Ruggedness 6 VSWR = 8:1 all phases, POUT < 32 dBm FOUT < 1GHz FOUT > 1GHz - - -36 -30 - - 10:1 - -87 -80 dBm FTX = 1785 MHz, FRX = 1805 to 1880 MHz, POUT < 32.0 dBm - -87 -80 dBm FTX = 1910 MHz, RBW = 100 kHz, FRX = 1930 to 1990 MHz, POUT < 32.0 dBm - - 2.5:1 dBm All load phases, POUT < 32 dBm RX Noi se Power Input VSWR C OMME N T S Over all output power levels PRELIMINARY DATA SHEET - Rev 1.0 08/2003 AWT6108 PERFORMANCE DATA Figure 3: GSM850/GSM900 Pout vs Vramp &Temperature (2 TX slots) 40 35 30 25 20 15 10 5 0 -5 -10 -15 -20 -25 -30 -35 -40 VBATT = 3.5V, Pin = 2dBm VREG = 2.8V, PW = 1154us 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 1.6 Vramp (V) 836.5MHz, +25C 897.5MHz, +25C 836.5MHz, -25C 897.5MHz, -25C 836.5MHz, +85C 897.5MHz, +85C Figure 4: DCS/PCS Pout vs Vramp & Temperature (2 TX slots) 35 30 25 VBATT = 3.5V, Pin = 2dBm VREG = 2.8V, PW = 1154us 20 15 10 5 0 -5 -10 -15 -20 -25 -30 -35 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 1.6 Vramp (V) 1747.5MHz,+25C 1880MHz, +25C 1747.5MHz, -25C 1880MHz, -25C PRELIMINARY DATA SHEET - Rev 1.0 08/2003 1747.5MHz, +85C 1880MHz, +85C 7 AWT6108 Figure 5: GSM850/GSM900 PMAX vs. Temperature @ Vramp=Vrampmax = 1.6V (2TX slots) 38.0 VBATT = 3.5V, VREG = 2.8V VRAMP = 1.6V, PW = 1154us Pin = 2 dBm 37.5 37.0 36.5 36.0 35.5 35.0 34.5 34.0 33.5 33.0 32.5 32.0 820 830 840 850 860 870 880 890 900 910 920 Frequency (MHz) GSM850, -20°C GSM900, -20°C GSM850, +25°C GSM900, +25°C GSM850, +85°C GSM900, +85°C Figure 6: DCS/PCS PMAX vs. Temperature @ Vramp = Vrampmax = 1.6V (2TX slots) 35.0 34.8 34.6 34.4 34.2 34.0 33.8 33.6 33.4 33.2 33.0 32.8 32.6 32.4 32.2 32.0 31.8 31.6 31.4 31.2 31.0 1700 VBATT = 3.5V, VREG = 2.8V Temp = +25°C, PW = 1154us VRAMP = 1.6V 1720 1740 1760 1780 1800 1820 1840 1860 1880 Frequency (MHz) DCS -20°C 8 PCS -20°C DCS +25°C PCS +25°C DCS +85°C PRELIMINARY DATA SHEET - Rev 1.0 08/2003 PCS +85° C 1900 1920 AWT6108 PACKAGE OUTLINE Figure 7: Package Outline Figure 8: Branding Specification PRELIMINARY DATA SHEET - Rev 1.0 08/2003 9 AWT6108 COMPONENT PACKAGING Figure 9: Tape & Reel Packaging Table 8: Tape & Reel Dimensions 10 PACKAGE TYPE TAPE WIDTH POCKET PITCH REEL CAPACITY MAX REEL DIA 7mm X 10mm 16mm 12mm 2500 22" PRELIMINARY DATA SHEET - Rev 1.0 08/2003 AWT6108 NOTES PRELIMINARY DATA SHEET - Rev 1.0 08/2003 11 AWT6108 ORDERING INFORMATION OR D E R N U MB E R T E MP E R AT U R E R AN GE PAC K AGE D E S C R IP T ION C OMP ON E N T PAC K AGIN G AWT6108M10P8 -30 oC to +110 oC 20 Pin 7mm x 10mm Surface Mount Module Tape and Reel, 2500 pieces per reel ANADIGICS, Inc. 141 Mount Bethel Road Warren, New Jersey 07059, U.S.A. Tel: +1 (908) 668-5000 Fax: +1 (908) 668-5132 URL: http://www.anadigics.com E-mail: [email protected] IMPORTANT NOTICE ANADIGICS, Inc. reserves the right to make changes to its products or to discontinue any product at any time without notice. The product specifications contained in Advanced Product Information sheets and Preliminary Data Sheets are subject to change prior to a products formal introduction. Information in Data Sheets have been carefully checked and are assumed to be reliable; however, ANADIGICS assumes no responsibilities for inaccuracies. ANADIGICS strongly urges customers to verify that the information they are using is current before placing orders. WARNING ANADIGICS products are not intended for use in life support appliances, devices or systems. Use of an ANADIGICS product in any such application without written consent is prohibited. 12 PRELIMINARY DATA SHEET - Rev 1.0 08/2003