BAS 28W Silicon Switching Diode Array 3 • For high-speed switching applications 4 • Electrical insulated diodes 2 1 VPS05605 Type Marking Ordering Code Pin Configuration BAS 28W JTs 1 = C1 2 = C2 3 = A2 4 = A1 SOT-343 Q62702-A3466 Package Maximum Ratings Parameter Symbol Value Unit Diode reverse voltage VR 75 Peak reverse voltage VRM 85 Forward current IF 200 mA Surge forward current, t = 1 µs I FS 4.5 A Total power dissipation, T S = 103 °C Ptot 250 mW Junction temperature Tj 150 °C Storage temperature T stg V - 65 ...+150 Thermal Resistance Junction - ambient 1) Junction - soldering point RthJA ≤ 460 RthJS ≤ 190 K/W 1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 0.5cm2 Cu Semiconductor Group Semiconductor Group 11 Mar-16-1998 1998-11-01 BAS 28W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. 85 - - DC characteristics V(BR) Breakdown voltage V I (BR) = 10 µA mV VF Forward voltage I F = 1 mA - - 715 I F = 10 mA - - 855 I F = 50 mA - - 1000 I F = 150 mA - - 1250 - - 1 VR = 25 V, TA = 150 °C - - 30 VR = 75 V, TA = 150 °C - - 50 CD - - 2 pF trr - - 6 ns IR Reverse current µA VR = 75 V IR Reverse current AC characteristics Diode capacitance VR = 0 V, f = 1 MHz Reverse recovery time IF = 10 mA, IR = 10 mA, RL = 100 Ω, measured at IR = 1mA Test circuit for reverse recovery time D.U.T. ΙF Oscillograph EHN00019 Pulse generator: tp = 100ns, D = 0.05, t r = 0.6ns, R i = 50Ω Semiconductor Group Semiconductor Group Oscillograph: R = 50Ω, tr = 0.35ns, C ≤ 1pF 22 Mar-16-1998 1998-11-01 BAS 28W Forward current IF = f (TA*;TS) Forward current IF = f V F) * Package mounted on epoxy TA = 25°C 300 150 5 BAS 28 EHB00035 ΙF mA mA 200 100 IF TS typ 150 max TA 50 100 50 0 0 20 40 60 80 120 °C 100 0 150 0 0.5 1.0 V TA,TS 1.5 VF Permissible Pulse Load R thJS = f(t p) Permissible Pulse Load IFmax / IFDC = f(tp) 10 2 10 3 IFmax / IFDC K/W RthJS 10 2 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 10 0 -6 10 0 tp Semiconductor Group Semiconductor Group D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 - 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 33 Mar-16-1998 1998-11-01 BAS 28W Forward voltage V F = f (TA) 1.0 Reverse current IR = f (TA) BAS 28 EHB00037 10 nA V Ι F = 100 mA VF BAS 28 EHB00034 ΙR V R = 70 V 10 4 max. 5 10 mA 1 mA 0.5 5 10 70 V 3 5 0.1 mA 25 V typ. 10 2 5 10 1 0 0 50 100 C 150 0 TA Semiconductor Group Semiconductor Group 50 100 C 150 TA 44 Mar-16-1998 1998-11-01