ONSEMI BAT54CLT3G

BAT54CLT1G,
SBAT54CLT1G
Dual Common Cathode
Schottky Barrier Diodes
These Schottky barrier diodes are designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand−held and portable applications where
space is limited.
Features





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30 VOLT
DUAL COMMON CATHODE
SCHOTTKY BARRIER DIODES
Extremely Fast Switching Speed
Low Forward Voltage − 0.35 V (Typ) @ IF = 10 mAdc
AEC Qualified and PPAP Capable
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
1
ANODE
MAXIMUM RATINGS (TJ = 125C unless otherwise noted)
Symbol
Value
Unit
Reverse Voltage
VR
30
V
Forward Power Dissipation
@ TA = 25C
Derate above 25C
PF
225
1.8
mW
mW/C
RqJA
508
311
C/W
IF
200 Max
mA
Rating
Thermal Resistance (Note 1)
Junction-to-Ambient (Note 2)
Forward Current (DC)
Non−Repetitive Peak Forward Current
tp < 10 msec
IFSM
Repetitive Peak Forward Current
Pulse Wave = 1 sec,
Duty Cycle = 66%
IFRM
SOT−23
CASE 318
STYLE 9
2
ANODE
3
CATHODE
MARKING DIAGRAM
5C MG
G
1
mA
600
5C
M
G
mA
300
= Device Code
= Date Code
= Pb−Free Package
(*Note: Microdot may be in either location)
Junction Temperature
TJ
−55 to +125
C
Storage Temperature Range
Tstg
−55 to +150
C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 @ Minimum Pad.
2. FR−4 @ 1.0 x 1.0 inch Pad.
*Date Code orientation and/or position may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping†
BAT54CLT1G
SOT−23
(Pb−Free)
3,000 /
Tape & Reel
SBAT54CLT1G
SOT−23
(Pb−Free)
3,000 /
Tape & Reel
BAT54CLT3G
SOT−23
(Pb−Free)
10,000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
 Semiconductor Components Industries, LLC, 2011
November, 2011 − Rev. 8
1
Publication Order Number:
BAT54CLT1/D
BAT54CLT1G, SBAT54CLT1G
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (EACH DIODE)
Characteristic
Symbol
Reverse Breakdown Voltage
(IR = 10 mA)
V(BR)R
Total Capacitance
(VR = 1.0 V, f = 1.0 MHz)
CT
Reverse Leakage
(VR = 25 V)
IR
Forward Voltage
(IF = 0.1 mAdc)
VF
Forward Voltage
(IF = 30 mAdc)
VF
Forward Voltage
(IF = 100 mAdc)
VF
Reverse Recovery Time
(IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc, Figure 1)
trr
Forward Voltage
(IF = 1.0 mAdc)
VF
Forward Voltage
(IF = 10 mAdc)
VF
Min
Typ
Max
30
−
−
−
7.6
10
−
0.5
2.0
−
0.22
0.24
−
0.41
0.5
−
0.52
0.8
−
−
5.0
−
0.29
0.32
−
0.35
0.40
Unit
V
pF
mA
V
V
V
ns
V
V
820 W
+10 V
2k
100 mH
0.1 mF
IF
tr
0.1 mF
tp
T
IF
trr
10%
T
DUT
50 W OUTPUT
PULSE
GENERATOR
50 W INPUT
SAMPLING
OSCILLOSCOPE
90%
VR
IR
INPUT SIGNAL
iR(REC) = 1 mA
OUTPUT PULSE
(IF = IR = 10 mA; measured
at iR(REC) = 1 mA)
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
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2
BAT54CLT1G, SBAT54CLT1G
100
IF, FORWARD CURRENT (mA)
1 25C
85C
10
1 50C
1.0
25C
0.1
0.0
−40C
−55C
0.2
0.3
0.4
0.1
0.5
VF, FORWARD VOLTAGE (VOLTS)
0.6
Figure 2. Forward Voltage
IR, REVERSE CURRENT (mA)
1000
TA = 150C
100
TA = 125C
10
1.0
TA = 85C
0.1
0.01
0.001
TA = 25C
0
5
15
25
10
20
VR, REVERSE VOLTAGE (VOLTS)
30
Figure 3. Leakage Current
CT, TOTAL CAPACITANCE (pF)
14
12
10
8
6
4
2
0
0
5
10
15
20
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Total Capacitance
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3
25
30
BAT54CLT1G, SBAT54CLT1G
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AP
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
D
SEE VIEW C
3
HE
E
DIM
A
A1
b
c
D
E
e
L
L1
HE
q
c
1
2
e
b
0.25
q
A
L
A1
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
0
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.20
0.30
0.54
0.69
2.40
2.64
−−−
10 
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
0
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
10
STYLE 9:
PIN 1. ANODE
2. ANODE
3. CATHODE
L1
VIEW C
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
SCALE 10:1
0.8
0.031
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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BAT54CLT1/D