BC807, BC808 Vishay Semiconductors formerly General Semiconductor Small Signal Transistors (PNP) TO-236AB (SOT-23) .122 (3.1) .110 (2.8) .016 (0.4) Mounting Pad Layout Top View .056 (1.43) .052 (1.33) 3 .016 (0.4) .007 (0.175) .005 (0.125) max. .004 (0.1) .037(0.95) .037(0.95) 0.035 (0.9) Pin Configuration 1 = Base 2 = Emitter 3 = Collector 2 0.079 (2.0) .045 (1.15) .037 (0.95) 1 0.031 (0.8) 0.037 (0.95) 0.037 (0.95) .102 (2.6) .094 (2.4) .016 (0.4) Dimensions in inches and (millimeters) Mechanical Data Features Case: SOT-23 Plastic Package Weight: approx. 0.008 grams Marking BC807-16 = 5A BC808-16 = 5E Codes: -25 = 5B -25 = 5F -40 = 5C -40 = 5G Packaging Codes/Options: E8/10K per 13” reel (8mm tape), 30K/box E9/3K per 7” reel (8mm tape), 30K/box • PNP Silicon Epitaxial Planar Transistors for switching, AF driver and amplifier applications. • Especially suited for automatic insertion in thick and thin-film circuits. • These transistors are subdivided into three groups (-16, -25, and -40) according to their current gain. • As complementary types, the NPN transistors BC817 and BC818 are recomended. Maximum Ratings and Thermal Characteristics Parameter Collector-Emitter Voltage (Base shorted) BC807 BC808 Collector-Emitter Voltage (Base open) BC807 BC808 Emitter-Base Voltage Collector Current (TA = 25°C unless otherwise noted) Symbol Value Unit –VCES 50 30 V –VCEO 45 25 V –VEBO 5 V –IC 800 mA Peak Collector Current –ICM 1000 mA Peak Base Current –IBM 200 mA IEM 1000 mA Peak Emitter Current (1) Power Dissipation at TSB = 50 ˚C Ptot 310 Thermal Resistance Junction to Ambient Air RθJA 450 (1) °C/W mW Thermal Resistance Junction to Substrate Backside RθSB 320 (1) °C/W Junction Temperature Tj 150 °C Storage Temperature Range TS –65 to +150 °C Note: (1) Device on fiberglass substrate, see layout on next page. Document Number 88162 09-May-02 www.vishay.com 1 BC807, BC808 Vishay Semiconductors formerly General Semiconductor Electrical Characteristics (T = 25°C unless otherwise noted) Parameter Symbol J Test Condition Min Typ Max Unit –VCE = 1V, –IC = 100mA –VCE = 1V, –IC = 500mA 100 160 250 40 — — — — 250 400 600 — — — — — –VCEsat –IC = 500mA, –IB = 50mA — — 0.7 V Base Saturation Voltage VBEsat –IC = 500mA, –IB = 50mA — — 1.3 V Base-Emitter Voltage –VBEon –VCE = 1V, –IC = 500mA — — 1.2 V Collector-Base Cutoff Current –ICBO –VCB = 20V –VCB = 20V, TJ = 150°C — — — — 100 5 nA µA Emitter-Base Cutoff Current –IEBO –VEB = 4 V — — 100 nA fT –VCE = 5V, –IC = 10mA f = 50 MHz — 100 — MHz –VCB — 12 — pF DC Current Gain Current Gain Group –16 – 25 – 40 Collector Saturation Voltage hFE Gain-Bandwidth Product Collector-Base Capacitance CCBO = 10V, f = 1 MHz Note: (1)Device on fiberglass substrate, see layout. 0.30 (7.5) Layout for RθJA test 0.12 (3) Thickness: Fiberglass 0.059 in. (1.5 mm) Copper leads 0.012 in. (0.3 mm) .04 (1) .08 (2) .04 (1) .08 (2) 0.59 (15) 0.03 (0.8) 0.47 (12) Dimensions in inches (millimeters) 0.2 (5) 0.06 (1.5) 0.20 (5.1) www.vishay.com 2 Document Number 88162 09-May-02 BC807, BC808 Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves (TA = 25°C unless otherwise noted) Document Number 88162 09-May-02 www.vishay.com 3 BC807, BC808 Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves (TA = 25°C unless otherwise noted) www.vishay.com 4 Document Number 88162 09-May-02 BC807, BC808 Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves (TA = 25°C unless otherwise noted) Document Number 88162 09-May-02 www.vishay.com 5