TQP7M9101 ¼W High Linearity Amplifier Applications Repeaters Mobile Infrastructure CDMA / WCDMA / LTE General Purpose Wireless 3-pin SOT-89 Package Product Features Functional Block Diagram 400-4000 MHz +25 dBm P1dB +39.5 dBm Output IP3 17.5 dB Gain @ 2140 MHz +5V Single Supply, 87 mA Current No output matching required Internal RF overdrive protection Internal DC overvoltage protection On chip ESD protection SOT-89 Package GND 4 General Description 1 2 3 RF IN GND RF OUT Pin Configuration The TQP7M9101 is a high-linearity driver amplifier in a standard SOT-89 surface mount package. This InGaP/GaAs HBT delivers high performance across a broad range of frequencies with +40 dBm OIP3 and +25 dBm P1dB while only consuming 87 mA quiescent current. All devices are 100% RF and DC tested. Pin # Symbol 1 3 2, 4 The TQP7M9101 incorporates on-chip features that differentiate it from other products in the market. The RF output is internally matched in to 50 ohms. Only input matching is required for optimal performance in specific frequency bands making the component easy for design engineers to implement in their systems. The amplifier integrates an on-chip DC over-voltage and RF over-drive protection. This protects the amplifier from electrical DC voltage surges and high input RF input power levels that may occur in a system. On-chip ESD protection allows the amplifier to have a very robust Class 2 HBM ESD rating. RF Input RF Output / Vcc Ground Ordering Information The TQP7M9101 is targeted for use as a driver amplifier in wireless infrastructure where high linearity, medium power, and high efficiency are required. The device an excellent candidate for transceiver line cards in current and next generation multi-carrier 3G / 4G base stations. Part No. Description TQP7M9101 TQP7M9101-PCB900 TQP7M9101-PCB2140 0.25 W High Linearity Amplifier TQP7M9101 869-960 MHz EVB TQP7M9101 2.11-2.17 GHz EVB Standard T/R size = 1000 pieces on a 7” reel. Advanced Data Sheet: Rev D 09/19/11 © 2011 TriQuint Semiconductor, Inc. - 1 of 1 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network® TQP7M9101 ¼W High Linearity Amplifier Specifications Recommended Operating Conditions Absolute Maximum Ratings Parameter Rating Parameter Storage Temperature Device Voltage,Vcc Maximum Input Power -65 to +150 °C +8 V +23 dBm Vcc Tcase Tj (for>106 hours MTTF) Operation of this device outside the parameter ranges given above may cause permanent damage. Min +3 -40 Typ Max Units +5 +5.25 85 160 V C ° C ° Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions. Electrical Specifications Test conditions unless otherwise noted: +25°C, +5V Vsupply, in a tuned application circuit Parameter Operational Frequency Range Test Frequency Gain Input Return Loss Output Return Loss Output P1dB Output IP3 Conditions Min Typical 400 See Note 1. WCDMA Pout @ -55 dBc ACLR Noise Figure Vcc Quiescent Current, Icq Thermal Resistance (jnc to case) θjc Max Units 4000 MHz MHz dB dB dB dBm dBm dBm dB V mA ° C/W 2140 17.5 15 13.5 +25 +39.5 +14.5 3.9 5 87 71 Notes 1. OIP3 measured with two tones at an output power of +8 dBm / tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the OIP3 using 2:1 rule. Advanced Data Sheet: Rev D 09/19/11 © 2011 TriQuint Semiconductor, Inc. - 2 of 2 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network® TQP7M9101 ¼W High Linearity Amplifier Device Characterization Data Gain vs Frequency Output Smith Chart Input Smith Chart 40 1 0.8 30 4 GHz 4 GHz 0.6 Maximum Stable Gain (GMAX) Gain (dB) 0.4 20 0.4 GHz 0.2 0 10 -0.2 0 0.25 0.5 0.75 1 -1 -0.75-0.5-0.25 Insertion Gain (S21) 0.4 GHz 0 -0.4 -0.6 ‐10 -0.8 0 1 2 3 4 -1 Frequency (GHz) Note: The gain for the unmatched device in a 50 ohm system is shown as the trace labeled “Insertion Gain (S21)”. In a circuit tuned for a particular frequency band, it is expected that actual gain will be higher, up to the Maximum Stable Gain (GMAX). S-Parameter Data Vcc = +5 V, Icc = 87 mA, T = +25°C, unmatched 50 Ohm system, reference plane at device leads Freq (MHz) 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 3000 3200 3400 3600 3800 4000 S11 (dB) S11 (ang) S21 (dB) S21 (ang) -3.74 -2.43 -2.00 -1.81 -1.71 -1.68 -1.66 -1.65 -1.56 -1.60 -1.43 -1.41 -1.43 -1.45 -1.36 -1.40 -1.32 -1.19 -1.11 -154.94 -174.00 175.84 167.43 160.50 155.82 149.16 143.36 137.28 131.41 126.29 122.01 117.57 114.12 109.38 103.72 98.51 93.06 89.37 16.08 16.93 16.72 16.29 15.71 15.15 14.58 13.98 13.45 12.80 12.14 11.52 10.99 10.53 10.15 9.69 8.99 8.49 8.02 172.65 152.42 137.72 123.90 112.48 102.29 91.96 82.32 72.43 64.37 56.45 48.81 41.39 34.73 27.42 19.90 12.40 5.24 -0.57 Advanced Data Sheet: Rev D 09/19/11 © 2011 TriQuint Semiconductor, Inc. - 3 of 3 - S12 (dB) S12 (ang) -30.84 -28.85 -28.64 -28.38 -28.45 -28.29 -28.34 -28.40 -28.25 -28.52 -28.43 -28.73 -28.68 -28.78 -28.85 -29.00 -29.04 -29.04 -29.02 32.65 13.25 3.42 -4.74 -10.23 -15.72 -19.66 -25.64 -30.76 -35.06 -39.47 -42.87 -47.17 -49.96 -52.90 -59.40 -63.10 -68.03 -70.86 S22 (dB) -4.47 -6.02 -6.63 -7.05 -7.29 -7.67 -7.92 -8.05 -8.05 -7.96 -7.47 -7.49 -7.71 -7.92 -7.87 -7.85 -7.32 -6.75 -6.53 S22 (ang) 155.03 149.89 147.55 144.48 142.81 139.67 136.04 132.86 129.68 125.67 122.90 122.21 119.34 116.57 114.37 106.77 100.14 96.77 95.94 Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network® TQP7M9101 ¼W High Linearity Amplifier Application Circuit 869-960 MHz 1071363AW REV - 1071363PC REV +VCC GND SOT89 EVAL. BRD., 1/2 WATT Notes: 1. See PC Board Layout, page 8 for more information. 2. Components shown on the silkscreen but not on the schematic are not used. 3. 0 Ω resistors (C2,R1,R4) may be replaced with copper trace in the target application layout. 4. The recommended component values are dependent upon the frequency of operation. 5. All components are of 0603 size unless stated on the schematic. 6. Critical component placement locations: Distance from U1 Pin 1 (left edge) to C5 (right edge): 410 mils (19.0 deg. at 900 MHz) Distance from U1 Pin 1 (left edge) to R1 (right edge): 115 mils (5.3 deg. at 900 MHz) Distance from U1 Pin 3 (right edge) to R2 (left edge): 270 mils (12.5 deg. at 900 MHz) Bill of Material Ref Des n/a J1, J2 U1 R1, C2, R4 L1 C1 R2, C3 C4 C5 J3, J4 Value n/a n/a n/a 0Ω 33 nH 5.6 pF 100 pF 1.0 uF 3.9 pF n/a Description Manuf. Part Number Printed Circuit Board RF SMA Connector Amplifier, SOT-89 pkg. Resistor, Chip, 0603, 5%, 1/16W Inductor, 0805, 5%, Coilcraft CS Series Cap., Chip, 0603, +/-0.1pF. 200V. NPO/COG Cap., Chip, 5%, 50V, NPO/COG Cap., Chip, 10%, 10V, X5R Cap., Chip, 0603, +/-0.1pF. 200V NPO/COG Solder Turret TriQuint Johnson Comp. TriQuint various Coilcraft AVX various various AVX various 1071363 142-0701-851 TQP7M9101 Advanced Data Sheet: Rev D 09/19/11 © 2011 TriQuint Semiconductor, Inc. - 4 of 4 - 0805CS-330XJLB 06032U5R6BAT2A 06032U3R9BAT2A Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network® TQP7M9101 ¼W High Linearity Amplifier Typical Performance 869-960 MHz Frequency MHz 869 920 960 Gain Input Return Loss Output Return Loss Output P1dB Output IP3 (+8 dBm/tone, ∆f = 1 MHz) WCDMA Channel Power (at -55 dBc ACLR) [1] Noise Figure Supply Voltage, Vcc Quiescent Collector Current, Icq dB dB dB dBm dBm dBm dB V mA 20.2 12 18 +24.3 +39.2 +12.7 4.0 20.4 17 23 +24.4 +38.6 +13.4 4.0 +5 87 20.1 14 17 +24.4 +38.2 +13.5 3.9 Notes: 1. ACLR Test set-up: 3GPP WCDMA, TM1+64 DPCH, +5 MHz offset, PAR = 10.2 dB at 0.01% Prob. RF Performance Plots 869-960 MHz −40°C +25°C +85°C -5 Return Loss (dB) 22 21 20 19 -15 -20 -25 18 900 920 940 960 880 Freq (MHz) W-CDMA 3GPP Test Model 1+64 DPCH PAR = 10.2 dB @ 0.01% Probability 3.84 MHz BW 900 920 940 960 860 42 -50 +85°C +25°C −40°C -55 40 -65 38 14 15 16 8 Pout (dBm) W-CDMA 3GPP Test Model 1+64 DPCH PAR = 10.2 dB @ 0.01% Probability 3.84 MHz BW -40 -45 10 12 14 OIP3 (dBm) -65 15 16 Pout (dBm) Advanced Data Sheet: Rev D 09/19/11 © 2011 TriQuint Semiconductor, Inc. 17 920 940 960 Freq.= 920 MHz 24 960 MHz 920 MHz 869 MHz 40 900 Output Power vs. Input Power 26 38 22 −40°C +25°C +85°C 20 18 34 14 880 Frequency (MHz) 36 13 860 Temp.=+25°C 42 -60 12 24 1 MHz Tone Spacing -55 11 25 16 OIP3 Vs. Pout/Tone 44 Temp.=+25°C 960 MHz 920 MHz 869 MHz -50 −40°C +25°C +85°C Pout/Tone (dBm) ACLR Vs. Output Power -35 960 22 6 17 940 23 34 13 920 26 +85°C +25°C −40°C 36 -60 12 900 P1dB vs. Frequency 27 Freq.=920 MHz 1 MHz Tone Spacing Freq.=920 MHz -45 11 880 Axis Title OIP3 Vs. Pout/Tone 44 OIP3 (dBm) ACLR (dBc) -40 -20 Axis Title ACLR Vs. Output Power -35 -15 -30 860 P1dB (dBm) 880 −40°C +25°C +85°C -10 -25 -30 860 ACLR (dBc) -5 −40°C +25°C +85°C -10 Output Return Loss vs. Frequency 0 Pout (dBm) Gain (dB) Input Return Loss vs. Frequency 0 Return Loss (dB) Gain vs. Frequency 23 16 6 8 10 12 Pout/Tone (dBm) - 5 of 5 - 14 16 -3 -1 1 3 5 7 Pin (dBm) Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network® TQP7M9101 ¼W High Linearity Amplifier Application Circuit 2110-2170 MHz 1071363AW REV - 1071363PC REV +VCC GND SOT89 EVAL. BRD., 1/2 WATT Notes: 1. See PC Board Layout, page 8 for more information. 2. Components shown on the silkscreen but not on the schematic are not used. 3. 0 Ω resistors (C1,R2,R4) may be replaced with copper trace in the target application layout. 4. The recommended component values are dependent upon the frequency of operation. 5. All components are of 0603 size unless stated on the schematic. 6. Critical component placement locations: Distance from U1 Pin 1 (left edge) to R8 (right edge): 40 mils (4.4 deg. at 2140 MHz) Distance from U1 Pin 1 (left edge) to R1 (right edge): 115 mils (12.7 deg. at 2140 MHz) Distance from U1 Pin 3 (right edge) to C2 (left edge): 450 mils (49.8 deg. at 2140 MHz) Bill of Material Ref Des n/a J1, J2 U1 C1, R2, R4 L1 R1 R8 C2 C3 C4 J3, J4 Value n/a n/a n/a 0Ω 18 nH 1.8 pF 1.0 pF 10 pF 22 pF 1.0 uF n/a Description Manuf. Part Number Printed Circuit Board RF SMA Connector Amplifier, SOT-89 pkg. Resistor, Chip, 0603, 5%, 1/16W Inductor, 0805, 5%, Coilcraft CS Series Cap., Chip, 0603, +/-0.1pF. 200V. NPO/COG Cap., Chip, 0603, +/-0.1pF. 200V. NPO/COG Cap., Chip, 0603, +/-1%. 200V NPO/COG Cap., Chip, 5%, 50V, NPO/COG Cap., Chip, 10%, 10V, X5R Solder Turret TriQuint Johnson Comp. TriQuint various Coilcraft AVX AVX AVX various various various 1071363 142-0701-851 TQP7M9101 Advanced Data Sheet: Rev D 09/19/11 © 2011 TriQuint Semiconductor, Inc. - 6 of 6 - 0805CS-180XJLB 06032U1R8BAT2A 06032U1R0BAT2A 06032U100FAT2A Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network® TQP7M9101 ¼W High Linearity Amplifier Typical Performance 2110-2170 MHz Frequency MHz 2110 2140 2170 Gain Input Return Loss Output Return Loss Output P1dB Output IP3 (+8 dBm/tone, ∆f = 1 MHz) WCDMA Channel Power (at -55 dBc ACLR) 1 Noise Figure Supply Voltage, Vcc Quiescent Collector Current, Icq dB dB dB dBm dBm dBm dB V mA 17.6 15 14 +24.8 +39.5 +14.5 4.0 17.5 15 13.5 +24.8 +39.5 +14.5 3.9 +5 87 17.4 15 13 +24.6 +39.5 +14.5 4.1 Notes: 1. ACLR Test set-up: 3GPP WCDMA, TM1+64 DPCH, +5 MHz offset, PAR = 10.2 dB at 0.01% Prob. RF Performance Plots 2110-2170 MHz Gain vs. Frequency −40°C +25°C +85°C 17 16 2120 2130 2140 2150 2160 -5 −40°C +25°C +85°C -10 -15 -20 2110 2170 2120 Freq (MHz) 2160 -45 -50 +85°C +25°C −40°C -55 Freq.=2140 MHz 1 MHz Tone Spacing 40 +85°C +25°C −40°C 38 14 15 16 8 Pout (dBm) W-CDMA 3GPP Test Model 1+64 DPCH PAR = 10.2 dB @ 0.01% Probability 3.84 MHz BW -40 10 12 14 W-CDMA 3GPP Test Model 1+64 DPCH PAR = 10.2 dB @ 0.01% Probability 3.84 MHz BW 41 OIP3 (dBm) -50 -55 2170 MHz 2140 MHz 2110 MHz -60 12 13 14 2120 15 16 Pout (dBm) Advanced Data Sheet: Rev D 09/19/11 © 2011 TriQuint Semiconductor, Inc. 17 2140 2150 2160 2170 Output Power vs. Input Power over Temp 30 Temp.=+25°C 27 40 2170 MHz 2140 MHz 2110 MHz 39 2130 1 MHz Tone Spacing −40°C +25°C +85°C 24 21 18 37 11 24 Frequency (MHz) 38 -65 2170 25 22 2110 16 OIP3 Vs. Pout/Tone 42 Temp.=+25°C -45 2160 −40°C +25°C +85°C Pout/Tone (dBm) ACLR Vs. Output Power -35 2150 23 6 17 2140 26 Pout (dBm) 13 2130 P1dB vs. Frequency 27 34 12 2120 Freq (MHz) 36 -65 11 -15 -20 2110 2170 OIP3 Vs. Pout/Tone 44 OIP3 (dBm) ACLR (dBc) 2150 42 -60 ACLR (dBc) 2140 Freq.= 2140 MHz W-CDMA 3GPP Test Model 1+64 DPCH PAR = 10.2 dB @ 0.01% Probability 3.84 MHz BW -40 2130 −40°C +25°C +85°C -10 Freq (MHz) ACLR Vs. Output Power -35 Retun Loss (dB) 18 Output Return Loss vs. Frequency 0 -5 Retun Loss (dB) Gain (dB) 19 15 2110 Input Return Loss vs. Frequency 0 P1dB (dBm) 20 15 6 8 10 12 Pout/Tone (dBm) - 7 of 7 - 14 16 0 3 6 9 12 15 Pin (dBm) Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network® TQP7M9101 ¼W High Linearity Amplifier Pin Configuration and Description GND 4 1 2 3 RF IN GND RF OUT Pin Symbol Description 1 RF IN RF Input. Requires conjugate match for optimal performance. 2, 4 GND RF/DC Ground Connection 3 RFout / Vcc RF Output, matched to 50 ohms. External DC Block and supply voltage is required. Applications Information PC Board Layout 1071363AW REV - 1071363PC REV - PCB Material (stackup): 1 oz. Cu top layer 0.014 inch Nelco N-4000-13, εr=3.7 1 oz. Cu MIDDLE layer 1 Core Nelco N-4000-13 1 oz. Cu middle layer 2 0.014 inch Nelco N-4000-13 1 oz. Cu bottom layer Finished board thickness is 0.062±.006 +VCC GND 50 ohm line dimensions: width = .031”, spacing = .035”. The pad pattern shown has been developed and tested for optimized assembly at TriQuint Semiconductor. The PCB land pattern has been developed to accommodate lead and package tolerances. Since surface mount processes vary from supplier to supplier, careful process development is recommended. Advanced Data Sheet: Rev D 09/19/11 © 2011 TriQuint Semiconductor, Inc. - 8 of 8 - SOT89 EVAL. BRD., 1/2 WATT Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network® TQP7M9101 ¼W High Linearity Amplifier Mechanical Information Package Information and Dimensions This package is lead-free/RoHScompliant. The plating material on the leads is NiPdAu. It is compatible with both lead-free (maximum 260 °C reflow temperature) and lead (maximum 245 °C reflow temperature) soldering processes. 7M9101 The component will be marked with a “7M9101” designator with an alphanumeric lot code on the top surface of package. Mounting Configuration All dimensions are in millimeters (inches). Angles are in degrees. Notes: 1. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135”) diameter drill and have a final plated thru diameter of .25 mm (.010”). 2. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 3. RF trace width depends upon the PC board material and construction. 4. Use 1 oz. Copper minimum. Advanced Data Sheet: Rev D 09/19/11 © 2011 TriQuint Semiconductor, Inc. - 9 of 9 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network® TQP7M9101 ¼W High Linearity Amplifier Product Compliance Information ESD Information Solderability Compatible with the latest version of J-STD-020, Lead free solder, 260° ESD Rating: Value: Test: Standard: Class 2 >2000V to <4000V Human Body Model (HBM) JEDEC Standard JESD22-A114 ESD Rating: Value: Test: Standard: Class IV >2000V Charged Device Model (CDM) JEDEC Standard JESD22-C101 This part is compliant with EU 2002/95/EC RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment). This product also has the following attributes: Lead Free Halogen Free (Chlorine, Bromine) Antimony Free TBBP-A (C15H12Br402) Free PFOS Free SVHC Free MSL Rating The part is rated Moisture Sensitivity Level 3 at 260°C per JEDEC standard IPC/JEDEC J-STD-020. Contact Information For the latest specifications, additional product information, worldwide sales and distribution locations, and information about TriQuint: Web: www.triquint.com Email: [email protected] Tel: Fax: +1.503.615.9000 +1.503.615.8902 For technical questions and application information: Email: [email protected] Important Notice The information contained herein is believed to be reliable. TriQuint makes no warranties regarding the information contained herein. TriQuint assumes no responsibility or liability whatsoever for any of the information contained herein. TriQuint assumes no responsibility or liability whatsoever for the use of the information contained herein. The information contained herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with such information is entirely with the user. All information contained herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for TriQuint products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by such information. TriQuint products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death. Advanced Data Sheet: Rev D 09/19/11 © 2011 TriQuint Semiconductor, Inc. - 10 of 10 Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network® TQP7M9102 ½W High Linearity Amplifier Applications Repeaters Mobile Infrastructure CDMA / WCDMA / LTE General Purpose Wireless 3-pin SOT-89 Package Product Features Functional Block Diagram 400-4000 MHz +27.5 dBm P1dB +44 dBm Output IP3 17.8 dB Gain @ 2140 MHz +5V Single Supply, 135 mA Current Internal RF overdrive protection Internal DC overvoltage protection On chip ESD protection SOT-89 Package GND 4 General Description 1 2 3 RF IN GND RF OUT Pin Configuration The TQP7M9102 is a high linearity driver amplifier in a low-cost, RoHS compliant, surface mount package. This InGaP/GaAs HBT delivers high performance across a broad range of frequencies with +44 dBm OIP3 and +27.5 dBm P1dB while only consuming 135 mA quiescent current. All devices are 100% RF and DC tested. Pin # Symbol 1 3 2, 4 RF Input RF Output / Vcc Ground The TQP7M9102 incorporates on-chip features that differentiate it from other products in the market. The amplifier integrates an on-chip DC over-voltage and RF over-drive protection. This protects the amplifier from electrical DC voltage surges and high input RF input power levels that may occur in a system. On-chip ESD protection allows the amplifier to have a very robust Class 2 HBM ESD rating. The TQP7M9102 is targeted for use as a driver amplifier in wireless infrastructure where high linearity, medium power, and high efficiency are required. The device an excellent candidate for transceiver line cards in current and next generation multi-carrier 3G / 4G base stations. Ordering Information Part No. Description TQP7M9102 TQP7M9102-PCB900 TQP7M9102-PCB2140 0.5 W High Linearity Amplifier TQP7M9102 869-960MHz EVB TQP7M9102 2.11-2.17GHz EVB Standard T/R size = 1000 pieces on a 7” reel. Data Sheet: Rev D 10/04/11 © 2011 TriQuint Semiconductor, Inc. - 1 of 9 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network® TQP7M9102 ½W High Linearity Amplifier Specifications Recommended Operating Conditions Absolute Maximum Ratings Parameter Rating Parameter Min Storage Temperature Device Voltage, Vdd Maximum Input Power, CW -65 to +150 oC +8 V +27 dBm Vdd Tcase Tj (for>106 hours MTTF) +4.75 -40 Operation of this device outside the parameter ranges given above may cause permanent damage. Typ Max Units +5 +5.25 85 160 V C o C o Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions. Electrical Specifications Test conditions unless otherwise noted: +25ºC, +5V Vsupply, 50 Ω system, tuned application circuit Parameter Operational Frequency Range Test Frequency Gain Input Return Loss Output Return Loss Output P1dB Output IP3 WCDMA Pout @ -50 dBc ACLR Noise Figure Vcc Quiescent Current, Icq Thermal Resistance (jnc to case) θjc Conditions Min Typical 400 15 See Note 1. See Note 2. +26.4 +41 115 2140 17.4 12 10 +27.5 +43.8 +18.5 3.9 5 137 Max Units 4000 MHz MHz dB dB dB dBm dBm dBm dB V mA o C/W 155 50 Notes 1. OIP3 measured with two tones at an output power of +9 dBm / tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the OIP3 using 2:1 rule. 2. ACLR Test set-up: 3GPP WCDMA, TM1+64 DPCH, +5 MHz offset, PAR = 10.2 dB at 0.01% Prob. Data Sheet: Rev D 10/04/11 © 2011 TriQuint Semiconductor, Inc. - 2 of 9 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network® TQP7M9102 ½W High Linearity Amplifier Application Circuit 869-960 MHz (TQP7M9102-PCB900) 1071363AW REV - 1071363PC REV +VCC J3 R4 J4 GND C4 U1 R2 R1 C2 C6 C5 C1 L1 C3 SOT89 EVAL. BRD., 1/2 WATT Notes: 1. See PC Board Layout, page 7 for more information. 2. Components shown on the silkscreen but not on the schematic are not used. 3. 0 Ω resistor (R4) may be replaced with copper trace in the target application layout. 4. The recommended component values are dependent upon the frequency of operation. 5. All components are of 0603 size unless stated on the schematic. 6. Critical component placement locations: Distance from U1 Pin 1 (left edge) to C5 (right edge): 255 mils (12.1 deg. at 920 MHz) Distance from U1 Pin 1 (left edge) to C1 (right edge): 460 mils (21.9 deg. at 920 MHz) Distance from U1 Pin 3 (right edge) to R2 (left edge): 290 mils (13.8 deg. at 920 MHz) Distance from U1 Pin 3 (right edge) to C6 (left edge): 370 mils (17.6 deg. at 920 MHz) Bill of Material Ref Des n/a U1 R4 R1 R2 L1 C1, C5 C6 C2, C3 C4 Value n/a n/a 0Ω 1.5 Ω 2.2 nH 33 nH 5.6 pF 2.7 pF 100 pF 1.0 uF Description Manuf. Part Number Printed Circuit Board TQP7M9102 Amplifier, SOT-89 pkg. Resistor, Chip, 0603, 5%, 1/16W Resistor, Chip, 0603, 5%, 1/16W Inductor, 0603, +/-0.3 nH Inductor, 0805, 5%, Coilcraft CS Series Cap., Chip, 0603, +/-0.1pF. 200V. NPO/COG Cap., Chip, 0603, +/-0.1pF. 200V. NPO/COG Cap., Chip, 5%, 50V, NPO/COG Cap., Chip, 10%, 10V, X5R TriQuint TriQuint various various Toko Coilcraft AVX AVX various various 1071363 TQP7M9102 Data Sheet: Rev D 10/04/11 © 2011 TriQuint Semiconductor, Inc. - 3 of 9 - LL1608-FSL2N2S 0805CS-330XJLB 06032U5R6BAT2A 06032U2R7BAT2A Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network® TQP7M9102 ½W High Linearity Amplifier Typical Performance 869-960 MHz Frequency MHz 869 920 960 Gain Input Return Loss Output Return Loss Output P1dB Output IP3 (+19 dBm/tone, ∆f = 1 MHz) WCDMA Channel Power (at -50 dBc ACLR) [1] Noise Figure Supply Voltage, Vcc Quiescent Collector Current, Icq dB dB dB dBm dBm dBm dB V mA 21.8 -10 -12 +27.3 +42.7 +18.0 5.9 21.9 -16 -10 +27.4 +43.4 +18.2 5.9 +5 137 21.7 -17 -9 +27.4 +43.9 +18.1 5.9 Notes: 1. ACLR Test set-up: 3GPP WCDMA, TM1+64 DPCH, +5 MHz offset, PAR = 10.2 dB at 0.01% Prob. RF Performance Plots 869-960 MHz Gain vs. Frequency 22 21 20 −40°C +25°C +85°C -10 -15 900 920 940 960 880 900 W-CDMA 3GPP Test Model 1+64 DPCH PAR = 10.2 dB @ 0.01% Probability 3.84 MHz BW -65 14 15 16 17 18 19 42 +85°C +25°C −40°C 40 20 -45 13 15 17 19 -65 17 18 19 Pout (dBm) Data Sheet: Rev D 10/04/11 © 2011 TriQuint Semiconductor, Inc. 20 900 920 940 960 Output Power vs. Input Power 29 Freq.= 920 MHz 27 42 960 MHz 920 MHz 869 MHz 40 25 −40°C +25°C +85°C 23 21 36 16 880 Frequency (MHz) 38 15 860 44 960 MHz 920 MHz 869 MHz -60 14 27 1 MHz Tone Spacing Temp.=+25°C -55 13 28 21 OIP3 Vs. Pout/Tone 46 Temp.=+25°C -50 12 −40°C +25°C +85°C Pout/Tone (dBm) OIP3 (dBm) -40 960 25 11 ACLR Vs. Output Power W-CDMA 3GPP Test Model 1+64 DPCH PAR = 10.2 dB @ 0.01% Probability 3.84 MHz BW 940 26 Pout (dBm) -35 920 29 Pout (dBm) 13 900 P1dB vs. Frequency 30 36 12 880 Freq (MHz) 38 -60 ACLR (dBc) 860 44 +85°C +25°C −40°C -55 960 Freq.=920 MHz 1 MHz Tone Spacing -45 -50 940 OIP3 Vs. Pout/Tone 46 Freq.=920 MHz OIP3 (dBm) ACLR (dBc) -40 920 Freq (MHz) ACLR Vs. Output Power -35 -15 -25 860 Freq (MHz) P1dB (dBm) 880 -10 -20 -25 860 −40°C +25°C +85°C -5 -20 19 Output Return Loss vs. Frequency 0 -5 Return Loss (dB) 23 Gain (dB) Input Return Loss vs. Frequency 0 −40°C +25°C +85°C Return Loss (dB) 24 19 11 13 15 17 Pout/Tone (dBm) - 4 of 9 - 19 21 -3 -1 1 3 5 7 Pin (dBm) Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network® TQP7M9102 ½W High Linearity Amplifier Application Circuit 2110-2170 MHz (TQP7M9102-PCB2140) 1071363AW REV - 1071363PC REV R4 +VCC C6 R8 L1 GND SOT89 EVAL. BRD., 1/2 WATT Notes: 1. See PC Board Layout, page 7 for more information. 2. Components shown on the silkscreen but not on the schematic are not used. 3. 0 Ω resistors (C1, R2) may be replaced with copper trace in the target application layout. 4. The recommended component values are dependent upon the frequency of operation. 5. All components are of 0603 size unless stated on the schematic. 6. Critical component placement locations: Distance from U1 Pin 1 (left edge) to R8 (right edge): 40 mils (4.4 deg. at 2140 MHz) Distance from U1 Pin 1 (left edge) to R1 (right edge): 115 mils (12.7 deg. at 2140 MHz) Distance from U1 Pin 3 (right edge) to C6 (left edge): 180 mils (19.9 deg. at 2140 MHz) Distance from U1 Pin 3 (right edge) to C2 (left edge): 450 mils (49.8 deg. at 2140 MHz) Bill of Material Ref Des n/a U1 C1, R2, R4 L1 R1, R8 C2 C3 C4 C6 Value n/a n/a 0Ω 18 nH 1.5 pF 3.3 pF 22 pF 1.0 uF 0.8 pF Description Manuf. Part Number Printed Circuit Board TQP7M9102 Amplifier, SOT-89 pkg. Resistor, Chip, 0603, 5%, 1/16W Inductor, 0805, Coilcraft CS Series Cap., Chip, 0603, +/-0.1pF. 200V. NPO/COG Cap., Chip, 0603, +/-0.1pF. 200V NPO/COG Cap., Chip, 5%, 50V, NPO/COG Cap., Chip, 10%, 10V, X5R Cap., Chip, 0603, +/-0.1pF. 200V NPO/COG TriQuint TriQuint various Coilcraft AVX AVX various various AVX 1071363 TQP7M9102 Data Sheet: Rev D 10/04/11 © 2011 TriQuint Semiconductor, Inc. - 5 of 9 - 0805CS-180XJLB 06032U1R5BAT2A 06032U3R3BAT2A 06032U0R8BAT2A Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network® TQP7M9102 ½W High Linearity Amplifier Typical Performance 2110-2170 MHz Frequency MHz 2110 2140 2170 Gain Input Return Loss Output Return Loss Output P1dB Output IP3 (+9 dBm/tone, ∆f = 1 MHz) WCDMA Channel Power (at -50 dBc ACLR) [1] Noise Figure Supply Voltage, Vcc Quiescent Collector Current, Icq dB dB dB dBm dBm dBm dB V mA 17.9 -12 -12 +27.8 +43.6 +18.5 3.8 17.8 -12 -11 +27.6 +43.5 +18.4 3.9 5 137 17.7 -11 -10 +27.4 +43.6 +18.3 4.0 Notes: 1. ACLR Test set-up: 3GPP WCDMA, TM1+64 DPCH, +5 MHz offset, PAR = 10.2 dB at 0.01% Prob. RF Performance Plots 2110-2170 MHz -5 Retun Loss (dB) Gain (dB) 19 18 17 16 15 2110 2120 2130 2140 Input Return Loss vs. Frequency 0 −40°C +25°C +85°C 2150 2160 -15 -20 2110 2170 2120 Freq (MHz) W-CDMA 3GPP Test Model 1+64 DPCH PAR = 10.2 dB @ 0.01% Probability 3.84 MHz BW -40 2140 2150 2160 OIP3 Vs. Pout/Tone 46 -55 42 +85°C +25°C −40°C 40 38 18 19 20 7 9 Pout (dBm) W-CDMA 3GPP Test Model 1+64 DPCH PAR = 10.2 dB @ 0.01% Probability 3.84 MHz BW -40 11 13 15 W-CDMA 3GPP Test Model 1+64 DPCH PAR = 10.2 dB @ 0.01% Probability 3.84 MHz BW -60 17 18 19 Pout (dBm) Data Sheet: Rev D 10/04/11 © 2011 TriQuint Semiconductor, Inc. 20 2140 2150 2160 2170 27 42 2170 MHz 2140 MHz 2110 MHz −40°C +25°C +85°C 25 23 21 38 16 2130 Freq.=2140 MHz Temp.=+25°C 40 -65 15 2120 Output Power vs. Input Power 29 1 MHz Tone Spacing Pout (dBm) OIP3 (dBm) ACLR (dBc) 2170 MHz 2140 MHz 2110 MHz -55 14 27 Frequency (MHz) 44 -50 2170 28 25 2110 17 OIP3 Vs. Pout/Tone 46 Temp.=+25°C -45 2160 −40°C +25°C +85°C Pout/Tone (dBm) ACLR Vs. Output Power -35 2150 26 -60 -65 2140 29 P1dB (dBm) +85°C +25°C −40°C 17 2130 P1dB vs. Frequency 30 Freq.=2140 MHz 1 MHz Tone Spacing OIP3 (dBm) ACLR (dBc) -50 16 2120 Freq (MHz) Freq.= 2140 MHz -45 15 -15 -20 2110 2170 44 14 -10 Freq (MHz) ACLR Vs. Output Power -35 2130 −40°C +25°C +85°C -5 −40°C +25°C +85°C -10 Output Return Loss vs. Frequency 0 Retun Loss (dB) Gain vs. Frequency 20 19 7 9 11 13 Pout/Tone (dBm) - 6 of 9 - 15 17 2 4 6 8 10 12 Pin (dBm) Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network® TQP7M9102 ½W High Linearity Amplifier Pin Configuration and Description GND 4 Pin Symbol 1 RF IN 2, 4 GND 3 RFout / Vcc 1 2 3 RF IN GND RF OUT Description RF Input. Requires external match for optimal performance. External DC Block required. RF/DC Ground Connection RF Output. Requires external match for optimal performance. External DC Block and supply voltage is required. Applications Information PC Board Layout 1071363AW REV - 1071363PC REV - PCB Material (stackup): 1 oz. Cu top layer 0.014 inch Nelco N-4000-13, εr=3.7 1 oz. Cu MIDDLE layer 1 Core Nelco N-4000-13 1 oz. Cu middle layer 2 0.014 inch Nelco N-4000-13 1 oz. Cu bottom layer Finished board thickness is 0.062±.006 +VCC GND 50 ohm line dimensions: width = .031”, spacing = .035”. The pad pattern shown has been developed and tested for optimized assembly at TriQuint Semiconductor. The PCB land pattern has been developed to accommodate lead and package tolerances. Since surface mount processes vary from supplier to supplier, careful process development is recommended. Data Sheet: Rev D 10/04/11 © 2011 TriQuint Semiconductor, Inc. - 7 of 9 - SOT89 EVAL. BRD., 1/2 WATT Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network® TQP7M9102 ½W High Linearity Amplifier Mechanical Information Package Information and Dimensions This package is lead-free/RoHScompliant. The plating material on the leads is NiPdAu. It is compatible with both lead-free (maximum 260 °C reflow temperature) and lead (maximum 245 °C reflow temperature) soldering processes. 7M9102 The component will be marked with a “7M9102” designator with an alphanumeric lot code on the top surface of package. Mounting Configuration All dimensions are in millimeters (inches). Angles are in degrees. Notes: 1. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135”) diameter drill and have a final plated thru diameter of .25 mm (.010”). 2. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 3. RF trace width depends upon the PC board material and construction. 4. Use 1 oz. Copper minimum. Data Sheet: Rev D 10/04/11 © 2011 TriQuint Semiconductor, Inc. - 8 of 9 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network® TQP7M9102 ½W High Linearity Amplifier Product Compliance Information Solderability ESD Information Compatible with the latest version of J-STD-020, Lead free solder, 260° ESD Rating: Value: Test: Standard: Class 2 ≥ 2000 V and < 4000 V Human Body Model (HBM) JEDEC Standard JESD22-A114 ESD Rating: Value: Test: Standard: Class IV >2000 V Charged Device Model (CDM) JEDEC Standard JESD22-C101 This part is compliant with EU 2002/95/EC RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment). This product also has the following attributes: Lead Free Halogen Free (Chlorine, Bromine) Antimony Free TBBP-A (C15H12Br402) Free PFOS Free SVHC Free MSL Rating Level 3 at +260 °C convection reflow The part is rated Moisture Sensitivity Level 3 at 260°C per JEDEC standard IPC/JEDEC J-STD-020. Contact Information For the latest specifications, additional product information, worldwide sales and distribution locations, and information about TriQuint: Web: www.triquint.com Email: [email protected] Tel: Fax: +1.503.615.9000 +1.503.615.8902 For technical questions and application information: Email: [email protected] Important Notice The information contained herein is believed to be reliable. TriQuint makes no warranties regarding the information contained herein. TriQuint assumes no responsibility or liability whatsoever for any of the information contained herein. TriQuint assumes no responsibility or liability whatsoever for the use of the information contained herein. The information contained herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with such information is entirely with the user. All information contained herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for TriQuint products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by such information. TriQuint products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death. Data Sheet: Rev D 10/04/11 © 2011 TriQuint Semiconductor, Inc. - 9 of 9 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network®