BC858BW / BC858B Transistors PNP General Purpose Transistor BC858BW / BC858B zExternal dimensions (Unit : mm) zFeatures 1) BVCEO < -30V (IC=-1mA) 2) Complements the BC848B / BC848BW. BC858BW 2.0±0.2 0.9±0.1 1.3±0.1 0.65 0.65 BC858B Pakaging type UMT3 G3K SST3 G3K T106 T116 3000 3000 Marking Code Basic ordering unit (pieces) (3) 00.1 0.3+0.1 -0 ROHM : UMT3 EIAJ : EC-70 0.15±0.05 All terminals have same dimensions 0.95 +0.2 −0.1 1.9±0.2 zAbsolute maximum ratings (Ta=25°C) 0.45±0.1 0.95 0.95 (2) Limits Unit VCBO VCEO −30 −30 VEBO IC −5 −0.1 V V V A 0.2 Collector power dissipation PC Junction temperature Tj 0.35 150 ˚C Storage temperature Tstg −65 to +150 ˚C W 1.3+0.2 - 0.1 Symbol 0~0.1 2.4±0.2 (1) Parameter (1) Emitter (2) Base (3) Collector BC858B 2.9±0.2 Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current 0.7±0.1 0.1~0.4 BC858BW 1.2±0.1 zPackage, marking and packaging specifications Paet No. 0.2 (2) 2.1±0.1 (1) 0.2Min. (3) 0.4 +0.1 −0.05 ROHM : SST3 ∗ +0.1 0.15 −0.06 All terminals have same dimensions (1) Emitter (2) Base (3) Collector ∗ When mounted on 7 × 5 × 0.6 mm ceramic board. zElectrical characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit Collector-base breakdown voltage Collector-emitter breakdown voltage Parameter BVCBO BVCEO −30 −30 − − − − V V IC= −50µA IC= −1mA Emitter-base breakdown voltage BVEBO −5 − − − − − − − V nA µA IE= −50µA VCB= −30V − − − −100 4 −0.3 −0.65 Collector cutoff current ICBO Conditions V V VCB= −30V, Ta=150°C IC/IB= −10mA/−0.5mA IC/IB= −100mA/−5mA −0.75 V VCE/IC= −5V/−10mA 480 − 250 − MHz 4.5 − pF Collector-emitter saturation voltage VCE(sat) Base-emitter saturation voltage DC current transfer ratio VBE(on) hFE −0.6 − 210 − Transition frequency fT − Output capacitance Cob − VCE/IC= −5V/−2mA VCE= −5V , IE=20mA , f=100MHz VCB= −10V , IE=0 , f=1MHz zElectrical characteristics curves 0.7 10.0 Ta=25˚C 0.6 0.5 80 0.4 60 0.3 40 0.2 20 0.1 IB=0mA 0 2.0 0 1.0 COLLECTOR-EMITTER VOLTAGE : VCE(V) Fig.1 Grounded emitter output characteristics ( I ) 50 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) 100 8.0 Ta=25˚C 45 40 35 6.0 30 25 4.0 2.0 20 15 10 5 1B=0µA 0 2.0 0 1.0 COLLECTOR-EMITTER VOLTAGE : VCE(V) Fig.2 Grounded emitter output characteristics ( II ) Rev.A 1/4 BC858BW / BC858B Transistors 500 Ta=25˚C DC CURRENT GAIN : hFE VCE=10V 5V 100 1V 10 5 0.1 1.0 10 COLLECTOR CURRENT : IC(mA) 100 1000 Fig.3 DC current gain vs. collector current ( I ) 500 VCE=5V Ta=125˚C DC CURRENT GAIN : hFE Ta=25˚C 100 Ta=-55˚C 10 5 0.1 1.0 10 COLLECTOR CURRENT : IC(mA) 100 1000 Fig.4 DC current gain vs. collector current ( II ) 500 AC CURRENT GAIN : hFE Ta=25˚C VCE=5V f=1kHz 100 10 5 0.01 0.1 1.0 COLLECTOR CURRENT : IC(mA) 10 100 Fig.5 AC current gain vs. collector current Rev.A 2/4 BC858BW / BC858B 0.2 0.1 1.0 10 COLLECTOR CURRENT : IC(mA) 100 40V 10 100 COLLECTOR CURRENT : IC(mA) Fig.9 Turn-on time vs. collector current 100 10 1.0 0.4 0.2 0 0.1 1.0 10 COLLECTOR CURRENT : IC(mA) 10 COLLECTOR CURRENT : IC(mA) 100 Fig.12 Fall time vs. collector current 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.1 100 1.0 10 100 COLLECTOR CURRENT : IC(mA) Fig.8 Grounded emitter propagation characteristics 1000 Ta=25˚C VCC=40V IC / IB=10 Ta=25˚C IC=10IB1=10IB2 15V 40V VCE=3V 100 10 1.0 10 COLLECTOR CURRENT : IC(mA) 10 COLLECTOR CURRENT : IC(mA) Ta=25˚C f=1MHz Cib 10 Cob 1 10 REVERSE BIAS VOLTAGE(V) Fig.13 Input/output capacitance vs. voltage 50 100 Fig.11 Storage time vs. collector current 50 100 1 0.5 10 1.0 100 Fig.10 Rise time vs. collector current CAPACITANCE (pF) Ta=25˚C VCC=40V IC=10IB1=10IB2 FALL TIME : tf(ns) 1000 0.6 100 VCC=3V 10 1.0 0.8 1000 Ta=25˚C IC / IB=10 15V 1.0 RISE TIME : tr(ns) TURN ON TIME : ton(ns) 100 1.2 Fig.7 Base-emitter saturation voltage vs. collector current Fig.6 Collector-emitter saturation voltage vs. collector current 1000 1.4 Ta=25˚C VCE=10V 1.6 STORAGE TIME : tS(ns) 0 0.1 1.8 Ta=25˚C IC / IB=10 1.6 BASE EMITTER VOLTAGE : VBE(ON)(V) 0.3 1.8 COLLECTOR-EMITTER VOLTAGE : VCE(V) Ta=25˚C IC / IB=10 BASE EMITTER SATURATION VOLTAGE : VBE(sat)(V) COLLECTOR EMITTER SATURATION VOLTAGE : VCE(sat)(V) Transistors Ta=25˚C 300MHz 100MHz 200MHz 300MHz 10 200MHz 1.0 0.5 0.5 100MHz 1 10 100 500 COLLECTOR CURRENT : IC(mA) Fig.14 Gain bandwidth product Rev.A 3/4 BC858BW / BC858B Ta=25˚C VCE=5V 100 10 0.5 1 100 10 COLLECTOR CURRENT : IC(mA) Ta=25°C VCE=6V f=270Hz 10 hre IC=1mA hie=8.75kΩ hfe=270 hre=6.25×10-5 hoe=17.7µS hoe 100 1 10 COLLECTOR CURRENT : IC(mA) 10n VCB=30V 1n 100p 10p 1p 0.1p Fig.16 h parameter vs. collector current Fig.15 Gain bandwidth product vs. collector current 0 25 50 75 100 125 150 AMBIENT TEMPERATURE : Ta(°C) Fig.17 Noise characteristics ( I ) 100k 10 8 dB B B B 3d 2 5d 3 8d 4 B 5 10k 1d 6 12 7 Ta=25˚C VCE=5V f=10Hz = NF SOURCE RESISTANCE : RS(Ω) Ta=25˚C VCE=5V IC=100µA RS=10kΩ 9 NOISE FIGURE : NF (dB) hre hfe 1 0.1 0.1 500 hoe hie COLLECTOR CUTOFF CURRENT : ICBO(A) 100 1000 h-PARAMETERS NORMALIZED TO 1mA CURRENT GAIN-BANDWIDTH PRODUCT : fT(MHz) Transistors 1k 1 0 10 100 1k FREQUENCY : f(Hz) 10k 100 0.01 100k Fig.18 Noise vs. collector current SOURCE RESISTANCE : RS (Ω) SOURCE RESISTANCE : RS (Ω) dB B SOURCE RESISTANCE : RS (Ω) =1 2 5d Fig.21 Noise characteristics ( IV ) 10k Ta=25˚C VCE=5V f=10kHz B 3d 10 B 8d 0.1 1 COLLECTOR CURRENT : IC(mA) NF B 1k 100 0.01 100k 1d Fig.20 Noise characteristics ( III ) B 10 B 0.1 1 COLLECTOR CURRENT : IC(mA) dB 3d 100 0.01 10k Ta=25˚C VCE=5V f=1kHz =1 B 1k NF 5d B dB B B 8d 5d 3d =1 dB 10k 12 NF 100k 8d Ta=25˚C VCE=5V f=30Hz 10 Fig.19 Noise characteristics ( II ) dB 12 100k 0.1 1 COLLECTOR CURRENT : IC(mA) 1k 100 0.01 0.1 1 COLLECTOR CURRENT : IC(mA) 10 Fig. 22 Noise characteristics ( V ) Rev.A 4/4 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. 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